NPN Bipolar Transistor
Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G
Text: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package
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KTC3198-O/Y/GR/BL
C/10s
195mg
S1405004
NPN Bipolar Transistor
KTC3198-O
TO-92 NPN Bipolar Transistor
Bl 370
MARKING A1G
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2SB624
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.
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2SB624
200TYP
-100mA)
2SD596.
OT-23
BL/SSSTC014
2SB624
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bcx5316
Abstract: BCX5616
Text: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5616 ISSUE 5 – MARCH 2001 C COMPLEMENTARY TYPE – BCX5316 PARTMARKING DETAIL – BL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage
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BCX5616
BCX5316
500mA,
150mA,
100MHz
bcx5316
BCX5616
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C1815 GR
Abstract: 2SC1815 NPN C1815 2SC1815-BL transistor c1815 2SC1815Y 2SC1815-GR 2SC1815BL 2SC1815GR 2SC1815 GR
Text: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF
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2SC1815-O
2SC1815-Y
2SC1815-GR
2SC1815-BL
2SC1815
C1815
C1815 GR
NPN C1815
2SC1815-BL
transistor c1815
2SC1815Y
2SC1815BL
2SC1815GR
2SC1815 GR
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C1815 GR
Abstract: 2SC1815 2SC1815GR 2sc1815 transistor micro transistor 2SC1815-GR 2SC1815-BL OF C1815 GR 2SC1815BL 2SC1815 GR
Text: MCC TM Micro Commercial Components 2SC1815 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF
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2SC1815
2SC1815-O
2SC1815-Y
2SC1815-GR
2SC1815-BL
C1815
100uAdc,
C1815 GR
2SC1815GR
2sc1815 transistor
micro transistor
2SC1815-BL
OF C1815 GR
2SC1815BL
2SC1815 GR
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2SC1815
Abstract: 2SC1815GR 2SC1815-BL 2SC1815-GR 2SC1815BL 2SC1815 GR 2SC1815 Y 2SC1815O NPN C1815 C1815 bl
Text: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF
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2SC1815-O
2SC1815-Y
2SC1815-GR
2SC1815-BL
2SC1815
C1815
-55oC
125oC
2SC1815GR
2SC1815-BL
2SC1815BL
2SC1815 GR
2SC1815 Y
2SC1815O
NPN C1815
C1815 bl
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2sc1815gr
Abstract: 2SC1815-GR 2SC1815 2SC1815-BL 2SC1815BL 2SC1815 GR 2SC1815O c1815 marking transistor C1815
Text: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF
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2SC1815-O
2SC1815-Y
2SC1815-GR
2SC1815-BL
2SC1815
C1815
-55oC
125oC
2sc1815gr
2SC1815-BL
2SC1815BL
2SC1815 GR
2SC1815O
c1815 marking transistor
C1815
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buk456
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE ] • bbSa^Bl DDBQbBQ 5?B * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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O220AB
BUK456-100A/B
BUK456
-100A
-100B
0Q30b63
buk456
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transistor 6bt
Abstract: DC/transistor 6bt
Text: N AMER PHILIPS/DISCRETE bbSB^Bl bTE ]> 0026345 Philips Semiconductors 050 « A P X Product Specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
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BU2508AF
00583SD
OT199;
transistor 6bt
DC/transistor 6bt
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BUK457-400B
Abstract: T0220AB
Text: PHILIPS IN TE RNA TI ONA L bSE J> Bl 7110flEb ODb413b Philips Semiconductors Power MOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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711052b
BUK457-400B
T0220AB
BUK457-400B
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbSB^Bl 0031531 "ns HAPX^^duc^peoification PNP 4 G Hz wideband transistor £ BFQ32 N AUER PHILIPS/DISCRETE D ESCRIPTION b'lE PINNING P N P transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband
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BFQ32
BFQ32/02
BFR96.
bbS3T31
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELE CTRONICS INC 42E D MMBTA92 Bl 7 ^ 4 1 4 2 OGDTDSS T Œ S M Û K PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Sym bol Rating Unit Collector-Base Voltage Collector-Emltter Voltage
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MMBTA92
MPSA92
100/iA,
300/js,
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbSB^Bl DDSfiBbR 5T4 « A P X b'lE P Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2520AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
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BU2520AF
PINNING-SOT199
bb53T31
D02fl37S
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tca150c
Abstract: 1j99 SOLITRON
Text: S O L I IR ON ÜLVILLÜ INC bl l ' v a _o_i »E|fl3t.aL0E ODOISST 4 ENGINEERING DEVICE SPECIFICATION NO. 6079/2N2697 SILICON TRANSISTOR GENERAL DESCRIPTION This device JLa an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications
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6079/2N2697
hF68602
DATEL2/26/62
tca150c
1j99
SOLITRON
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Untitled
Abstract: No abstract text available
Text: • bbSB^Bl DDESSMfl ^5T H A P X N AUER PHILIPS/DISCRETE BSP206 b7E D ; v P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.
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BSP206
OT223
Q02S551
M0A366
MCA367
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BUK553-60A
Abstract: BUK553-60B
Text: PHILIPS INTERNATIONAL bSE D Bl 7110fiSb D0b4aEb T5b • P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ G E N E R A L D E S C R IP T IO N N-cnannel enhancement mode logic level field-effect power transistor in a plastic envelope.
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711002b
00b4E2b
BUK553-60A/B
-T0220AB
BUK553
BUK553-60A
BUK553-60B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors ^ bbSB^Bl 0 Q3 1 7 flfl b37 M APX Preliminary specification PNP HDTV video transistor BFQ295 — FEATURES N AUER PHILIPS/DISCRETE b'lE D PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product
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BFQ295
BFQ296.
BFQ295
OT128B
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Untitled
Abstract: No abstract text available
Text: 7T2TE37 m ÜD4bl73 bl? • S G T H _ r Z 7 SCS-THOMSON m 7# STP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N 60FI V dss RDS on Id 600 V < 2 .2 Q 2 .7 A . TYPICAL RDS(on) = 2 i i m AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED
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7T2TE37
D4bl73
STP3N60FI
7TSTE37
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Untitled
Abstract: No abstract text available
Text: • bbSB^Bl 0025137 440 APX N AUER PHI LIPS/DISCRETE b?E BFR30 BFR31 T> J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Planar epitaxial symmetrical junction field effect transistor in a microminiature plastic envelope. It is intended for low level general purpose amplifiers in thick and thin-film circuits.
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BFR30
BFR31
bbS3T31
Q05S143
bb53T31
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors fl i bbSa^Bl 0 D3 2 EQ3 1 7 S APX Product specification PNP 4 GHz wideband transistor X3A-BFQ32 crystal ^ N Afl ER PHILIPS/DISCRETE b*lE D DESCRIPTION M ECHANICAL DATA PNP crystal used in BFQ32S SOT37 , BFQ149 (SOT89) and BFG31 (SOT223). Crystals are supplied as whole
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X3A-BFQ32
BFQ32S
BFQ149
BFG31
OT223)
thick34)
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bup4
Abstract: No abstract text available
Text: MAE D 6133167 DDDOmfl DD3 SEM EFA BL HIGH POWER DIE w - ^ ~ DIFFUSIO N SEMELAB DIFFUSED B Y SE M E F A B ISMLB LTD 1 G135 chip family The G 1 3 5 chip family is an NPN bipolar multiepitaxial planar transistor intended for applications requiring fast switching, low saturation, high power
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EmitMJ14000
BUP49
BUP52
BUV61
BUS51
BUR51
BUP54
BUT92A
BUP51
G935A
bup4
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Untitled
Abstract: No abstract text available
Text: 2DI15OMA-O5O 150a ✓ < 7 - hv la ± / < r7—^ ) V i POWER TRANSISTOR MODULE : F e a tu re s • hFE/)''BL' High DC Current Gain • KA'"jSL' • 7 'J —:f c'i') • High speed sw itching K rti Including Free W heeling Diode Insulated Type • A p p lic a t io n s
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2DI15OMA-O5O
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Untitled
Abstract: No abstract text available
Text: • bbSa^Bl □□25cm 754 ■ APX N AUER PHILIPS/DISCRETE PXTA77 b?E D J V SMALL-SIGNAL DARLINGTON TRANSISTOR PNP small-signal darlington transistors, housed in a microminiature envelope SOT89 . The complementary type is the P X T A 27 . Q U IC K R E F E R E N C E D A T A
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PXTA77
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C3656
Abstract: C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396
Text: Resistance-Contained Transistor F e a t u r e s if On-chip bias resistance •Cx Sma 11-sized package MCP.CP,SPA,NP ☆ Both PNP and NPN types are available. a le I C “ 1 O O m A ( ) : Ma i k i ng on MCP. CP. S e r i A p p i Abso ute Maximum Ratings 2SA1341(BL)/2SC3395(BY)
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11-sized
2SA1676
/2SC4396
2SA1677
/2SC4397
2SA1678
/2SC4398
2SA1722
/2SC4498
2SA1341
C3656
C4397
c3399
A1678
transistor C4047
c3396
a1343
C3863
A1526
C4396
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