TRANSISTOR BJT HIGH CURRENT Search Results

TRANSISTOR BJT HIGH CURRENT Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
MG800FXF1ZMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD
TLP5702H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L

TRANSISTOR BJT HIGH CURRENT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor 2sc5353 Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000	Original	PDF	DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FMMT560Q 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 	Original	PDF	FMMT560Q -500V -150mA 500mA 100mA AEC-Q101 DS37020
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features	Original	PDF	FZT751Q OT223 -300mV FZT651Q AEC-Q101 DS36963
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. •	Original	PDF	FZT651Q OT223 J-STD-020 300mV MIL-STD-202, DS36917
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FMMT459Q 500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Feature 	Original	PDF	FMMT459Q 150mA 500mA 625mW -90mV 120mA AEC-Q101 DS37019
9435R Abstract: NSB9435T1 Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	PDF	NSB9435T1 r14525 NSB9435T1/D 9435R NSB9435T1
Untitled Abstract: No abstract text available Text: MJD32CQ 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features           	Original	PDF	MJD32CQ -100V MJD31CQ AEC-Q101 DS37050
transistor bd 370 Abstract: No abstract text available Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	PDF	NSB9435T1 r14525 NSB9435T1/D transistor bd 370
9435R Abstract: transistor BD 240 Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	PDF	NSB9435T1 r14525 NSB9435T1/D 9435R transistor BD 240
Untitled Abstract: No abstract text available Text: MJD31CQ 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features           	Original	PDF	MJD31CQ MJD32CQ AEC-Q101 DS37049
9435R Abstract: NSB9435T1 NSB9435T1G power BJT PNP Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com • Collector −Emitter Sustaining Voltage − POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc	Original	PDF	NSB9435T1 OT-223 NSB9435T1/D 9435R NSB9435T1 NSB9435T1G power BJT PNP
Untitled Abstract: No abstract text available Text: BCX5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features     BVCEO > 80V Ic = 1A High Continuous Collector Current	Original	PDF	BCX5616Q 500mV BCX5316Q AEC-Q101 DS37024
Transistor BJT 547 b Abstract: 120E2 BJT 12 NUS5531MTR2G NUS5531MT Text: NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce sat Transistor, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and	Original	PDF	NUS5531MT NUS5531MT/D Transistor BJT 547 b 120E2 BJT 12 NUS5531MTR2G NUS5531MT
NUS5531MT Abstract: No abstract text available Text: NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce sat Transistor, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and	Original	PDF	NUS5531MT NUS5531MT/D NUS5531MT

transistor 1249 Abstract: UPA800T 1788 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800T UPA800T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 Parameters Q1, Q2 IS BF 3.84e-16 MJC 0.5 124.9 XCJC NF 1.04 CJS VAF 11.87 VJS 0.75 IKF 0.027 MJS ISE 1e-14 FC 0.5 10e-12 NE 2.17 TF BR	Original	PDF	UPA800T UPA800T 84e-16 1e-14 01e-4 358e-12 21e-12 10e-12 635e-9 24-Hour transistor 1249 1788
Drive Base BJT Abstract: Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576 Text: Testing Key Parameters of High Voltage BJTs for RDFC Applications Application Note AN-2576 INTRODUCTION Certain primary switch BJT parameters are particularly important for correct operation and longterm reliability of RDFC designs. : • Current gain hFE	Original	PDF	AN-2576 AN-2337 AN-2576-0809A 25-Sep-2008 Drive Base BJT Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576
PWM Controller For BJT Abstract: power transistor bjt 1000 a transistor marking CS Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the	Original	PDF	AP3720 20kHz AP3720 PWM Controller For BJT power transistor bjt 1000 a transistor marking CS
Untitled Abstract: No abstract text available Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the	Original	PDF	AP3720 20kHz AP3720
710 opto coupler Abstract: 3720M-G1 power BJT 710 opto COUNTER LED bcd transistor marking CS bjt specifications Transistor BJT High Current AP3720 bjt high voltage Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the	Original	PDF	AP3720 20kHz AP3720 710 opto coupler 3720M-G1 power BJT 710 opto COUNTER LED bcd transistor marking CS bjt specifications Transistor BJT High Current bjt high voltage
SMD Transistor dj rm Abstract: complementary bipolar transistor driver schematic Z-Power P7 TRANSISTOR SMD mosfet driver cree mc-e driver TRANSISTOR SMD mosfet power 882 smd ZXLD1320 SMD Transistor dj diode smd ed 49 Text: A Product Line of Diodes Incorporated DN95 2.8A high current LED driving using ZXLD1320 with external power switch Ray Liu, Applications engineer, Diodes Incorporated Introduction In the past decade, solid state lighting devices have gained popularity. High brightness LEDs are	Original	PDF	ZXLD1320 curre41 SMD Transistor dj rm complementary bipolar transistor driver schematic Z-Power P7 TRANSISTOR SMD mosfet driver cree mc-e driver TRANSISTOR SMD mosfet power 882 smd SMD Transistor dj diode smd ed 49
power bjt transistor 600v Abstract: fuji bjt 50D-050A transistor and schematic symbols Transistor BJT 100A 2D TRANSISTOR 50d-050 M208 bjt transistor 600v 2pack transistor module 50a 600V Text: FUJI 2DI 50D-050A M U M Ë ïïr a iÊ /< 2-Pack BJT 600 V 50 A 7— \ s7 'S *S 7 & :& > n .— V POWER TRANSISTOR MODULE Features • High Current • h F E ^ g i' High DC Current Gain •mm Insulated Type A pplicatio ns • High Power Switching • ftE fM n X X fll Uninterruptible Power Supply	OCR Scan	PDF	50D-050A E82988 power bjt transistor 600v fuji bjt 50D-050A transistor and schematic symbols Transistor BJT 100A 2D TRANSISTOR 50d-050 M208 bjt transistor 600v 2pack transistor module 50a 600V
BJT with V-I characteristics Abstract: bjt 100a power bjt transistor 600v 1100D-050 bjt 100a 600v KRT 30 BJT 600V BJT IC Vce Text: 2-Pack BJT 2 D I 100D-050 ‘ SSX ✓ n° 7 - POWER TRANSISTOR MODULE • # 5 : Features • 7 1} — 5fc-f K rti >$¥<4 • hF E ^iS *,' Including Free W heeling Diode High DC Current Gain Insulated Type ' Applications • "jJ- H i g H Power S witching	OCR Scan	PDF	1100D-050 E82988 -di/dt-100A/us BJT with V-I characteristics bjt 100a power bjt transistor 600v 1100D-050 bjt 100a 600v KRT 30 BJT 600V BJT IC Vce
KF 35 transistor Abstract: power bjt transistor 600v 690 lc b20 diode two transistors IEBo-400mA fblu 3A500 Text: 2-Pack BJT 600 V e o,v 150 A 2D11500-050 ^ L /l I l $ 1 O u t l i n e Drawings POWER TRANSISTOR MODULE • # 4 : Features m y \ —Tfrj i) • hFE*v'iS t' • : t — K rt/K Including Free Wheeling Diode High DC Current Gain Insulated Type I Applications	OCR Scan	PDF	D11500-050 E82988 50A///S KF 35 transistor power bjt transistor 600v 690 lc b20 diode two transistors IEBo-400mA fblu 3A500
power bjt transistor 600v Abstract: 6DI20C-050 bjt transistor 600v transistor 104 VCBo-600V fuji bjt fuji bjt 6-pack Text: FU JI 6-Pack BJT 600 V 20 A 6DI20C-050 MUM STOSOÊ : Outline Drawings POWER TRANSISTOR MODULE : Features y > 9 ¥ 4 1 — Ff tM • 7 U— • h F E ^ 'iiji' • Including Free Wheeling Diode High DC Current Gain Insulated Type ' A pplica tio ns • DC * —9 U'M	OCR Scan	PDF	6DI20C-050 E82988 50//s power bjt transistor 600v 6DI20C-050 bjt transistor 600v transistor 104 VCBo-600V fuji bjt fuji bjt 6-pack

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TRANSISTOR BJT HIGH CURRENT Search Results

TRANSISTOR BJT HIGH CURRENT Result Highlights (5)

TRANSISTOR BJT HIGH CURRENT Datasheets Context Search

transistor 2sc5353

Untitled

Untitled

Untitled

Untitled

9435R

Untitled

transistor bd 370

9435R

Untitled

9435R

Untitled

Transistor BJT 547 b

NUS5531MT

transistor 1249

Drive Base BJT

PWM Controller For BJT

Untitled

710 opto coupler

SMD Transistor dj rm

power bjt transistor 600v

BJT with V-I characteristics

KF 35 transistor

power bjt transistor 600v