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    TRANSISTOR BI 185 Search Results

    TRANSISTOR BI 185 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BI 185 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T1800GB45A

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 1 Sep, 2011 Data Sheet Issue:- A1 IXYS Company Advance Data Insulated Gate Bi-Polar Transistor Type T1800GB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T1800GB45A T1800GB45A

    T1800GB

    Abstract: T1800GB45A D-68623 IC500A westcode t1800 westcode t1800gb45a
    Text: WESTCODE An Date:- 1 Sep, 2011 Data Sheet Issue:- A1 IXYS Company Advance Data Insulated Gate Bi-Polar Transistor Type T1800GB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T1800GB45A T1800GB45A T1800GB D-68623 IC500A westcode t1800 westcode t1800gb45a

    TF-450

    Abstract: BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible re tu D=0.1 0.50 ra pe 80 60 C B m te D=0.5 0.75 t en bi tp 120 Am


    Original     		PDF ZTX1047A 100ms NY11725 TF-450 BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761

    transistor bI 240

    Abstract: transistor bI 340 TRANSISTOR BI 185 BI 340 BPSG
    Text: 0.25um 1P5M Logic 2.5V / 5.0V / 30V updated in 2005.03.21 Features ƒ Vdd Core/IO/HV ƒ Starting Material ƒ Well ƒ Isolation ƒ Transistor Gate Length (Ldrawn) Channel Gate Oxide ƒ ƒ ƒ ƒ ƒ Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization


    Original     		PDF V/30V 30um2 36um2 transistor bI 240 transistor bI 340 TRANSISTOR BI 185 BI 340 BPSG

    672047

    Abstract: 1472181 RF-12A 35278 435013 AB-190 AN-181 BUF600 OPA660 low-pass Passive filter design
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


    Original     		PDF OPA660 MOPA660 OPA660. 672047 1472181 RF-12A 35278 435013 AB-190 AN-181 BUF600 OPA660 low-pass Passive filter design

    bi 370 transistor

    Abstract: transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor
    Text: 0.25um 1P5M Logic 2.5V / 5.0V / 20V updated in 2005.03.21 Features ƒ Vdd Core/IO/HV ƒ Starting Material ƒ Well ƒ Isolation ƒ Transistor Gate Length (Ldrawn) ƒ ƒ ƒ ƒ ƒ Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization


    Original     		PDF V/20V 30um2 36um2 bi 370 transistor transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    672047

    Abstract: BUF600 low-pass Passive filter design AN181 OPA660 AB-190 cc18d AN-180
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


    Original     		PDF OPA660 672047 BUF600 low-pass Passive filter design AN181 OPA660 AB-190 cc18d AN-180

    5a2 zener diode

    Abstract: ZENER 1B9 zener 5c2 zener DIODE 5c2 4c2 zener diode Zener Diode 1B9 2b9 zener diode 6c3 zener diode 4b2 zener diode RISCwatch 13h6422
    Text: Application Note PowerPC Embedded Processors Design and Debug Considerations: PowerPC 750CX, 750CXe, and 750L Abstract - This application note discusses the use of certain reference designs and JTAG debugger probes with PowerPC 750CX/CXe processors and


    Original     		PDF 750CX, 750CXe, 750CX/CXe PPC750 5a2 zener diode ZENER 1B9 zener 5c2 zener DIODE 5c2 4c2 zener diode Zener Diode 1B9 2b9 zener diode 6c3 zener diode 4b2 zener diode RISCwatch 13h6422

    5c2 zener diode

    Abstract: zener 5c2 zener 11B2 zener DIODE 5c2 zener 1B9 6c3 zener diode ZENER A24 zener 2B1 zener 2B6 4c2 zener diode
    Text: Application Note PowerPC Embedded Processors Design and Debug Considerations: PowerPC 750CX, 750CXe, and 750L Abstract - This application note discusses the use of certain reference designs and JTAG debugger probes with PowerPC 750CX/CXe processors and


    Original     		PDF 750CX, 750CXe, 750CX/CXe 750CXe_ PPC750 5c2 zener diode zener 5c2 zener 11B2 zener DIODE 5c2 zener 1B9 6c3 zener diode ZENER A24 zener 2B1 zener 2B6 4c2 zener diode

    BFP620 acs

    Abstract: BFP620 s parameters 4ghz
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		PDF BFP620 VPS05605 OT343 -j100 Aug-29-2001 BFP620 acs BFP620 s parameters 4ghz

    acs sot-343

    Abstract: spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560
    Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF VPS05605 OT-343 -j100 Dec-22-2000 acs sot-343 spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560

    620 sot-343

    Abstract: acs sot-343
    Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		PDF VPS05605 OT-343 -j100 Mar-01-2001 620 sot-343 acs sot-343

    Transistor BC 1078

    Abstract: Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425
    Text: BFP620F E7764 XYs NPN Silicon Germanium RF Transistor Preliminary data  High gain low noise RF transistor 3  Small package 1.4 x 0.8 x 0.59 mm 2 4  Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz  Maximum stable gain


    Original     		PDF BFP620F E7764 Jul-03-2003 Transistor BC 1078 Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425

    transistor 2028

    Abstract: bi 370 transistor MJE 340 transistor BFE540 MBG190 bi 370 transistor e transistor sot353 transistor 2097 aa sot353
    Text: Philips Semiconductors Preliminary specification NPN wideband differential transistor FEATURES BFE540 PINNING • Small size • Low voltage operation • Temperature matched • Balanced configuration • hpE matched. PIN SYM BO L 1 2 3 4 5 bi e base 1 emitter


    OCR Scan     		PDF BFE540 OT353 MBG192 711002b OT353. 71iafi2h transistor 2028 bi 370 transistor MJE 340 transistor BFE540 MBG190 bi 370 transistor e transistor sot353 transistor 2097 aa sot353

    TRANSISTOR MARKING 3D 6PIN

    Abstract: bi 370 transistor BFM540 transistor 2028 transistor code t30
    Text: Philips Semiconductors Preliminary specification NPN wideband dual transistor BFM540 FEATURES PINNING • Small size PIN SYMBOL • Temperature and hFE matched 1 bi base 1 • Low noise and high gain 2 ei emitter 1 • Gold metallization ensures excellent reliability.


    OCR Scan     		PDF BFM540 OT363 OT363A OT363. 711005b TRANSISTOR MARKING 3D 6PIN bi 370 transistor BFM540 transistor 2028 transistor code t30

    TTL 7457

    Abstract: BFC540 XFK7 NPN Transistor 13007 NPN power transistor spice
    Text: Philips Semiconductors Preliminary specification NPN wideband cascode transistor BFC540 FEATURES PINNING • Small size PIN SYMBOL • High reverse isolation 1 t>2 base 2 • High linearity 2 ei emitter 1 • Low noise figure 3 bi base 1 • Gold metallization ensures excellent reliability.


    OCR Scan     		PDF BFC540 OT353 TTL 7457 BFC540 XFK7 NPN Transistor 13007 NPN power transistor spice

    Gan transistor

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20176 5 Watts,1.78 -1.92 GHz RF Power Transistor Preliminary Key Features Description The 20176 is a class A/AB RF Power Transistor intended for 26 VDC operation across 1.78-1.92 GHz frequency band. It is rated 5 Watts minimum output power and may be used for both CW and


    OCR Scan     		PDF

    TIPL773A

    Abstract: TIPL773B TRANSISTOR tipl773A TIPL773 NPN Transistor 1.5A 600V D037 7626S transistor BC 185 texas instruments transistor
    Text: TE XA S I N S T R -COPTO} 8961726 bE TEXAS IN S T R Î FJ flTbl7 ab Q 0 3 7 D 77 fi 62C 37077 O P T O ) TIPL773, TIPL773A, TIPL773B N-P-N SILICON TRIPLE TRANSISTOR ADVANCED POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 T -3 3 -2 9 • 180 W a t 2 5 °C Case Temperature


    OCR Scan     		PDF Q037D77 TIPL773, TIPL773A, TIPL773B T-33-29 TIPL773 TIPL773A TIPL773B TRANSISTOR tipl773A NPN Transistor 1.5A 600V D037 7626S transistor BC 185 texas instruments transistor

    BUK426-200A

    Abstract: TTPC BUK426-200B
    Text: 7 = 3 ? - / / Philips Com ponents BUK426-200A/B Data sheet status Product specification date of issue March 1991 PHILIPS INTERNATIONAL PowerMOS transistor ^ GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic full pack envelope.


    OCR Scan     		PDF BUK426-200A/B BUK426 -200A -200B -SOT199 BUK426-200A TTPC BUK426-200B

    TIPL773

    Abstract: B 773 transistor TIPL773A
    Text: TEXAS INSTR -COPTO} 8961726 b E Î F J f l T b l 7 ab Q0 3 7 D77 TEXAS IN S T R I 62C 37077 O P T O ) TIPL773, TIPL773A, TIPL773B N-P-N SILICON TRIPLE TRANSISTOR ADVANCED POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 T -3 3 -2 9 • 180 W a t 2 5 °C Case Temperature


    OCR Scan     		PDF TIPL773, TIPL773A, TIPL773B TIPL773 T-33-29 B 773 transistor TIPL773A

    diode t25 4 HO

    Abstract: PO25C 415E BUK456 BUK456-200A BUK456-200B T0220AB
    Text: PHILIPS INTERNATIONAL bSE D • 7110flEb OObHlEl 5*13 ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is Intended for use in


    OCR Scan     		PDF 7110flEb BUK456-200A/B BUK456 -200A -200B T0220AB b4125 diode t25 4 HO PO25C 415E BUK456-200A BUK456-200B T0220AB

    2T2 transistor

    Abstract: BUK456 BUK456-200A BUK456-200B T0220AB PHILIPS 016
    Text: PHILIPS INTERNATIONAL bSE T> m TUDfiEb OObHlEl 5^3 • PHIN Philips Semiconductors Product Specification BUK456-200A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK456-200A/B T0220AB -100-C -200A -200B 711DA2b DDb41BS 2T2 transistor BUK456 BUK456-200A BUK456-200B PHILIPS 016

    Untitled

    Abstract: No abstract text available
    Text: PLASTIC SIDELOOKER PAIR 8PT9 Ëi ECTROlfC 5 H23A1/2 SECTION X~X LEAD PROFILE The H23A is a matched emitter-detector pair which consists of a gallium arsenide infrared emitting cfiode and a silicon phototransistor. The clear epoxy packaging systern is designed to optimize the mechanical


    OCR Scan     		PDF H23A1/2 ST1342 5T1221 ST1222