BFW92A
Abstract: No abstract text available
Text: BFW92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A
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BFW92A
BFW92A
D-74025
20-Jan-99
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BFW92A
Abstract: B 1566 Transistor
Text: BFW92A Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A
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BFW92A
BFW92A
D-74025
20-Jan-99
B 1566 Transistor
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BFW92A
Abstract: No abstract text available
Text: BFW92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A
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BFW92A
BFW92A
D-74025
20-Jan-99
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Transistor B 1566
Abstract: BFW92A
Text: BFW92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A
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BFW92A
BFW92A
D-74025
20-Jan-99
Transistor B 1566
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BFW92A
Abstract: No abstract text available
Text: BFW92A Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A Plastic case TO 50
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BFW92A
BFW92A
D-74025
31-Oct-97
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BFW92A
Abstract: No abstract text available
Text: BFW92A Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 1 BFW92A Marking: BFW92A Plastic case TO 50 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings
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BFW92A
BFW92A
D-74025
18-Apr-96
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Untitled
Abstract: No abstract text available
Text: BFW92A VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure 2 E Applications 2 Wide band RF amplifier up to GHz range. 1 Mechanical Data 19039 Electrostatic sensitive device. Observe precautions for handling.
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BFW92A
BFW92A
55ake
D-74025
26-Aug-04
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din 3141
Abstract: BFW92A transistor bfw 88 bfw 92 bfw 96
Text: BFW 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92A Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings
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BFW92A
D-74025
din 3141
transistor bfw 88
bfw 92
bfw 96
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BFW92A
Abstract: No abstract text available
Text: Not for new design, this product will be obsoleted soon BFW92A Vishay Semiconductors Silicon NPN Planar RF Transistor B 1 C 3 Features • • • • 3 2 High power gain Low noise figure e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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BFW92A
2002/95/EC
2002/96/EC
BFW92A
18-Jul-08
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BFW92
Abstract: bfw92a
Text: BFW92A Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 3 B 1 C 3 High power gain Low noise figure e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 E 2 1 Applications 19039 Electrostatic sensitive device.
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BFW92A
2002/95/EC
2002/96/EC
BFW92A
D-74025
29-Apr-05
BFW92
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BFW92A
Abstract: No abstract text available
Text: BFW92A Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 3 B 1 C 3 High power gain Low noise figure e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 E 2 1 Applications 19039 Electrostatic sensitive device.
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BFW92A
2002/95/EC
2002/96/EC
08-Apr-05
BFW92A
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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F2002:
F2003:
F2004:
2SC3355 SPICE MODEL
transistor C2003
C319B
MGF1412
RF TRANSISTOR 10GHZ
MRF134 rf model .lib file
2SK571
MGF1402
MRF9331
pb_hp_at41411_19921101
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transistor 431 N
Abstract: TRANSISTOR D 471 BFW92 BFW92A philips bfw92
Text: Product specification Philips Semiconductors '7 ^ 3 / - / 7 NPN 3 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D • ^ BFW92A ?110fl2b D D M L D 3 2 47b ■ PHIN PINNING NPN transistor in a plastic SOT37 envelope. PIN It is primarily intended for use in
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BFW92A
110fl2b
DDMLD32
BFW92A
BFW92
BFW92A/02
transistor 431 N
TRANSISTOR D 471
philips bfw92
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BFW92A
Abstract: SP 1191 BFW92 transistor BFW92A
Text: bbS3T31 Philips S em iconductors DD3Sm2 T34 Product specification APX NPN 3 GHz wideband transistor BFW92A N AMER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. DESCRIPTION PIN It is primarily Intended for use in amplifiers in the 40 to 860 MHz
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bbS3T31
0D32142
BFW92A
BFW92A
BFW92
BFW92A/02
SP 1191
transistor BFW92A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors H bb53T31 0D32142 T34 M A P X _Product specification NPN 3 GHz w ideband transistor ^ BFW 92A N AllER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in amplifiers in the 40 to 860 MHz
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bb53T31
0D32142
BFW92A/02
BFW92A
BFW92
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Untitled
Abstract: No abstract text available
Text: BFW92A ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure
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BFW92A
BFW92A
D-74025
20-Jan-99
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din 3141
Abstract: No abstract text available
Text: TEMIC BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. ^ Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50
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BFW92A
BFW92A
D-74025
31-Oct-97
din 3141
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MAR 641 TRANSISTOR
Abstract: bfw92a mar 617
Text: Temic BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings
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BFW92A
BFW92A
26-Mar-97
MAR 641 TRANSISTOR
mar 617
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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317A-01
Abstract: 2G0909
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line fj 4 .5 G H z @ 1 0 m A HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR d e s ig n e d p r i m a r i l y f o r u s e in M A T V / C A T V a m p li f i e r s a n d o t h e r NPN SILICO N b r o a d b a n d lin e a r a p p lic a t io n s d e m a n d in g h ig h p o w e r g a in w i t h lo w
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MRF931
Abstract: MRF961 MRF580 BFR90 transistor RF Transistor Selection MRF511 case 317-01 transistor bfr96 transistor MRF536 2N5943
Text: RF SMALL-SIGNAL TRANSISTORS continued Small-Signal Amplifier Transistor Selection by Package In small-signal RF applications the package style is often determined by the end application, or circuit construction technique. To aid the circuit designer in device selection, below are listed the Motorola broad range of RF small-signal amplifier transistors organized
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2N5109
2N5943
MRF525t
MRF536*
MRF2369
MRF571
44A-01,
2N5947
MRF511
2N6603
MRF931
MRF961
MRF580
BFR90 transistor
RF Transistor Selection
case 317-01
transistor bfr96
transistor MRF536
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BF547A
Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS
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LCD01
BF547A
transistor bf 175
BFG65 equivalent
BF547B
BFG25AXD
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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