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    TRANSISTOR BFW92A Search Results

    TRANSISTOR BFW92A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BFW92A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFW92A

    Abstract: No abstract text available
    Text: BFW92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A


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    PDF BFW92A BFW92A D-74025 20-Jan-99

    BFW92A

    Abstract: B 1566 Transistor
    Text: BFW92A Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A


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    PDF BFW92A BFW92A D-74025 20-Jan-99 B 1566 Transistor

    BFW92A

    Abstract: No abstract text available
    Text: BFW92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A


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    PDF BFW92A BFW92A D-74025 20-Jan-99

    Transistor B 1566

    Abstract: BFW92A
    Text: BFW92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A


    Original
    PDF BFW92A BFW92A D-74025 20-Jan-99 Transistor B 1566

    BFW92A

    Abstract: No abstract text available
    Text: BFW92A Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A Plastic case TO 50


    Original
    PDF BFW92A BFW92A D-74025 31-Oct-97

    BFW92A

    Abstract: No abstract text available
    Text: BFW92A Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 1 BFW92A Marking: BFW92A Plastic case TO 50 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings


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    PDF BFW92A BFW92A D-74025 18-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: BFW92A VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure 2 E Applications 2 Wide band RF amplifier up to GHz range. 1 Mechanical Data 19039 Electrostatic sensitive device. Observe precautions for handling.


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    PDF BFW92A BFW92A 55ake D-74025 26-Aug-04

    din 3141

    Abstract: BFW92A transistor bfw 88 bfw 92 bfw 96
    Text: BFW 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92A Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings


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    PDF BFW92A D-74025 din 3141 transistor bfw 88 bfw 92 bfw 96

    BFW92A

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon BFW92A Vishay Semiconductors Silicon NPN Planar RF Transistor B 1 C 3 Features • • • • 3 2 High power gain Low noise figure e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC


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    PDF BFW92A 2002/95/EC 2002/96/EC BFW92A 18-Jul-08

    BFW92

    Abstract: bfw92a
    Text: BFW92A Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 3 B 1 C 3 High power gain Low noise figure e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 E 2 1 Applications 19039 Electrostatic sensitive device.


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    PDF BFW92A 2002/95/EC 2002/96/EC BFW92A D-74025 29-Apr-05 BFW92

    BFW92A

    Abstract: No abstract text available
    Text: BFW92A Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 3 B 1 C 3 High power gain Low noise figure e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 E 2 1 Applications 19039 Electrostatic sensitive device.


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    PDF BFW92A 2002/95/EC 2002/96/EC 08-Apr-05 BFW92A

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


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    PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    transistor 431 N

    Abstract: TRANSISTOR D 471 BFW92 BFW92A philips bfw92
    Text: Product specification Philips Semiconductors '7 ^ 3 / - / 7 NPN 3 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D • ^ BFW92A ?110fl2b D D M L D 3 2 47b ■ PHIN PINNING NPN transistor in a plastic SOT37 envelope. PIN It is primarily intended for use in


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    PDF BFW92A 110fl2b DDMLD32 BFW92A BFW92 BFW92A/02 transistor 431 N TRANSISTOR D 471 philips bfw92

    BFW92A

    Abstract: SP 1191 BFW92 transistor BFW92A
    Text: bbS3T31 Philips S em iconductors DD3Sm2 T34 Product specification APX NPN 3 GHz wideband transistor BFW92A N AMER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. DESCRIPTION PIN It is primarily Intended for use in amplifiers in the 40 to 860 MHz


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    PDF bbS3T31 0D32142 BFW92A BFW92A BFW92 BFW92A/02 SP 1191 transistor BFW92A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors H bb53T31 0D32142 T34 M A P X _Product specification NPN 3 GHz w ideband transistor ^ BFW 92A N AllER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in amplifiers in the 40 to 860 MHz


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    PDF bb53T31 0D32142 BFW92A/02 BFW92A BFW92

    Untitled

    Abstract: No abstract text available
    Text: BFW92A ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure


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    PDF BFW92A BFW92A D-74025 20-Jan-99

    din 3141

    Abstract: No abstract text available
    Text: TEMIC BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. ^ Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50


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    PDF BFW92A BFW92A D-74025 31-Oct-97 din 3141

    MAR 641 TRANSISTOR

    Abstract: bfw92a mar 617
    Text: Temic BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings


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    PDF BFW92A BFW92A 26-Mar-97 MAR 641 TRANSISTOR mar 617

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    317A-01

    Abstract: 2G0909
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line fj 4 .5 G H z @ 1 0 m A HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR d e s ig n e d p r i m a r i l y f o r u s e in M A T V / C A T V a m p li f i e r s a n d o t h e r NPN SILICO N b r o a d b a n d lin e a r a p p lic a t io n s d e m a n d in g h ig h p o w e r g a in w i t h lo w


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    PDF

    MRF931

    Abstract: MRF961 MRF580 BFR90 transistor RF Transistor Selection MRF511 case 317-01 transistor bfr96 transistor MRF536 2N5943
    Text: RF SMALL-SIGNAL TRANSISTORS continued Small-Signal Amplifier Transistor Selection by Package In small-signal RF applications the package style is often determined by the end application, or circuit construction technique. To aid the circuit designer in device selection, below are listed the Motorola broad range of RF small-signal amplifier transistors organized


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    PDF 2N5109 2N5943 MRF525t MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF931 MRF961 MRF580 BFR90 transistor RF Transistor Selection case 317-01 transistor bfr96 transistor MRF536

    BF547A

    Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
    Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS


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    PDF LCD01 BF547A transistor bf 175 BFG65 equivalent BF547B BFG25AXD

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc