BFQ19
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ19 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFQ19 PINNING NPN transistor in a SOT89 plastic
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BFQ19
BFQ19
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BFQ19S E6327
Abstract: BAW78D BFQ19S E6327
Text: BFQ19S NPN Silicon RF Transistor 1 For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFQ19S
VPS05162
BFQ19S E6327
BAW78D
BFQ19S
E6327
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Untitled
Abstract: No abstract text available
Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 2 3 amplifiers in antenna and telecommunications systems up to 1.5 GHz 1 at collector currents from 10 mA to 70 mA * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFQ19S
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Untitled
Abstract: No abstract text available
Text: BFQ19S NPN Silicon RF Transistor 1 For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFQ19S
VPS05162
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BFQ19
Abstract: BFQ19C
Text: BFQ19 NPN 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFQ19
771-BFQ19-T/R
BFQ19
BFQ19C
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BFQ19S
Abstract: No abstract text available
Text: BFQ19S NPN Silicon RF Transistor 1 For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFQ19S
VPS05162
Jun-22-2001
BFQ19S
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transistor bfq19
Abstract: BFQ19 MBB773
Text: BFQ19 NPN 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFQ19
transistor bfq19
BFQ19
MBB773
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Untitled
Abstract: No abstract text available
Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 2 amplifiers in antenna and 3 2 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BFQ19S
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BAW78D
Abstract: BFQ19S transistor MARKING CODE LAYOUT G SOT89
Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BFQ19S
BAW78D
BFQ19S
transistor MARKING CODE LAYOUT G SOT89
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S*S Technologies
Abstract: No abstract text available
Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFQ19S
S*S Technologies
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BAW78D
Abstract: BFQ19S
Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BFQ19S
BAW78D
BFQ19S
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Untitled
Abstract: No abstract text available
Text: BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband 1 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available
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BFQ19S
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available
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BFQ19S
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: BFQ19S Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available
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BFQ19S
AEC-Q101
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BFQ195
Abstract: MCD160 mcd165 MCD158 BFG197 MSB014 MCD156 DSA00888 3002 TRANSISTOR equivalent
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification BFG197; BFG197/X;
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BFG197;
BFG197/X;
BFG197/XR
BFG197
BFG197
OT143
BFQ195
MCD160
mcd165
MCD158
MSB014
MCD156
DSA00888
3002 TRANSISTOR equivalent
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Untitled
Abstract: No abstract text available
Text: □(□53=131 0035DL.2 715 B A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AMER PHILIPS/DISCRETE DESCRIPTION b7E ]> PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is
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0035DL
BFQ19
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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BFQ19
Abstract: UBB774 transistor dc 558 npn 947 transistor A 1282 transistor DGSS D 1652 transistor
Text: 1^53^31 DGSSDt.2 715 B A P X Philips Sem iconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AUER PHILIPS/DISCRETE DESCRIPTION b7E ]>' PINNING NPN transistor In a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is
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BFQ19
DA000
BFQ19
UBB774
transistor dc 558 npn
947 transistor
A 1282 transistor
DGSS
D 1652 transistor
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: bbS3T31 0Q322Dfl 757 Philips Semiconductors APY Product specification NPN 8 GHz wideband transistor crystal X3A-BFQ195 AUER PHILIPS/DISCRETE b'JE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied
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bbS3T31
0Q322Dfl
X3A-BFQ195
BFG195
OT103)
BFG197
OT143)
BFG198
OT223)
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X3A-BFQ195
Abstract: BFG195 BFG197 BFG198
Text: Philips Semiconductors |H bb SB T B l NPN 8 GHz wideband transistor crystal D0322Dfl 757 APY Product specification X3A-BFQ195 N AMER PHILIPS/DISCRETE LTE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied
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bbS3T31
00322DÃ
X3A-BFQ195
BFG195
BFG197
OT143)
BFG198
OT223)
X3A-BFQ195
URV-3-5-52/733
BFG195
BFG197
BFG198
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IC 1296
Abstract: K 193 transistor sot marking code ZS BFQ193
Text: SIEMENS BFQ193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F = 1.3 dB at 900 MHz Marking Ordering Code Pin Configuration BFQ 193 RCs 1=B 2=C CO II Q62702-F1312 Package m
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BFQ193
Q62702-F1312
OT-89
IS21el2
IC 1296
K 193 transistor
sot marking code ZS
BFQ193
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -type available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!
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BFQ19S
Q62702-F1088
OT-89
fl535b05
D1S2011
A235bD5
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BFG195
Abstract: SOT103 BFQ195 BFG197 BFG198 X3A-BFQ195 320nm
Text: P rodu ct spe cification P h ilip s S em icon du ctors T-31-9 o NPN 8 GHz wideband transistor crystal PHILIPS INTERNATIONAL X3A-BFQ195 SbE D • TllGflSb □□HbDTfl 3 ^ IPHIN M E C H A N IC A L DATA DESCRIPTION C rystal NPN crystal used in BFG195 SOT103 , BFG197
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BFG195
OT103)
BFG197
OT143)
BFG198
OT223)
X3A-BFQ195
X3A-BFQ195
URV-3-5-52/733
BFG195
SOT103
BFQ195
BFG197
BFG198
320nm
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