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    TRANSISTOR BF 246 Search Results

    TRANSISTOR BF 246 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BF 246 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Cordless Phone circuit diagram

    Abstract: 2.4GHz Cordless Phone circuit diagram BFP750 cordless phone circuit S parameters of 5.8 GHz transistor SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR RF MODULE CIRCUIT DIAGRAM dect Cordless Phone system block diagram murata wifi saw filter cordless phone ic
    Text: BF P750 BF P750 a s a Dri ve r A mpl i fi er for 5.8 G Hz Cor dl es s P hon e A ppl i c a t i ons Appl i c ati o n N ote A N 246 Revision: Rev 1.1 2010-09-24 RF and P r otec ti on D evi c es Edition 2010-09-24 Published by Infineon Technologies AG 81726 Munich, Germany


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    PDF limitation111 5000MHz BFP750 AN246, BFP750 AN246 Cordless Phone circuit diagram 2.4GHz Cordless Phone circuit diagram cordless phone circuit S parameters of 5.8 GHz transistor SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR RF MODULE CIRCUIT DIAGRAM dect Cordless Phone system block diagram murata wifi saw filter cordless phone ic

    ikf68

    Abstract: 2P4N xp1800 laser diode spice model simulation
    Text: MAX3865 Input Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic


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    PDF MAX3865 H11M022 HDE072021 591E-018 HDE072021 ikf68 2P4N xp1800 laser diode spice model simulation

    ISE19

    Abstract: No abstract text available
    Text: MAX3676 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic


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    PDF MAX3676 H11M02 HDE113032 181E-017 HDE113032 ISE19

    2996M

    Abstract: H12A05 transistor 1002 transistor BF 502
    Text: MAX3750 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic (PECL), and Low Voltage Differential Signal (LVDS) formats to transfer data


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    PDF MAX3750 REPORTERL1N94 HDE113032 REPORTERL1N66 REPORTERL1N67 181E-017 HDE113032 2996M H12A05 transistor 1002 transistor BF 502

    Transistor BC 1078

    Abstract: uln2004 application note UDN2983A equivalent UDN2580A equivalent replacement M5266P TD62083 uln2803 REPLACEMENT FOR relay driver ic ULN2803 m54586p ULN2032A PA2003C
    Text: Interface Driver ICs PRODUCT GUIDE In recent years, dedicated custom ICs ASICs meeting specifications of various users have been widely used mainly for controlling electronic equipment. On the other hand, general purpose ICs, such as operational amplifiers, regulators,


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    2SC3953-SPICE

    Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
    Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f


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    PDF 12A02CH-SPICE 12A02CH 12A02CH 2SB1205 2SB1205 2SC3953-SPICE 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE

    transistor mje 3003

    Abstract: kf 202 transistor mje 3003 3003 BR TRANSISTOR IS-132
    Text: MAX3968 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic (PECL), and Low


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    PDF MAX3968 HDE113032 REPORTERL1N63 REPORTERL1N64 181E-017 HDE113032 transistor mje 3003 kf 202 transistor mje 3003 3003 BR TRANSISTOR IS-132

    Bipolar Junction Transistor

    Abstract: a 1023 transistor SPICE PARAMETER, sanyo, bipolar transistor 830P CPH5905 Spice Parameter, Bipolar Transistor SPICE PARAMETER
    Text: CPH5905 Base Emitter/Drain Source NPN-TR J-FET Gate Collector Schematic of CPH5905 SPICE PARAMETER N JFET Parameter Value Unit Parameter Value Unit VTO BETA LAMBDA RD RS RG IS N -0.798 19.0m 42.0m 0.46 0.46 0.07 1.08f 1.09 V CGD CGS 8.30p 8.30p F PB MJ FC


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    PDF CPH5905 27deg Bipolar Junction Transistor a 1023 transistor SPICE PARAMETER, sanyo, bipolar transistor 830P CPH5905 Spice Parameter, Bipolar Transistor SPICE PARAMETER

    CPH5901

    Abstract: SPICE PARAMETER, sanyo, bipolar transistor bipolar junction transistor transistor ne 107
    Text: CPH5901 Base Emitter/Drain Source NPN-TR J-FET Gate Collector Schematic of CPH5901 SPICE PARAMETER N JFET Parameter Value Unit Parameter Value Unit VTO BETA LAMBDA RD RS RG IS N -0.56 34.0m 17.0m 0.64 0.64 0.02 0.80f 1.07 V CGD CGS 8.00p 8.00p F PB MJ FC 0.42


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    PDF CPH5901 27deg CPH5901 SPICE PARAMETER, sanyo, bipolar transistor bipolar junction transistor transistor ne 107

    237F

    Abstract: transistor 1002 3980F
    Text: MAX980/MAX3981 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic (PECL), and Low Voltage Differential Signal


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    PDF MAX980/MAX3981 fo102 DE0900A DE0900A PADESD100 REPORTERL1N29 REPORTERL1N30 920E-018 237F transistor 1002 3980F

    Bipolar Junction Transistor

    Abstract: 680P CPH5902 SPICE PARAMETER, sanyo, bipolar transistor jfet bf a 1023 transistor SPICE PARAMETER, CPH5902
    Text: CPH5902 Base Emitter/Drain Source NPN-TR J-FET Gate Collector Schematic of CPH5902 SPICE PARAMETER N JFET Parameter Value Unit Parameter Value Unit VTO BETA LAMBDA RD RS RG IS N -0.734 26.0m 21.5m 0.80 0.80 0.08 1.00f 1.06 V CGD CGS 6.80p 6.80p F PB MJ FC


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    PDF CPH5902 27deg Bipolar Junction Transistor 680P CPH5902 SPICE PARAMETER, sanyo, bipolar transistor jfet bf a 1023 transistor SPICE PARAMETER, CPH5902

    for transistor bf 245c

    Abstract: BF 145 transistor transistor BF 245A BF 145 2n uhf fet micro to-237 transistor BC 310 transistor BC 321
    Text: MICRO EL EC TRO NICS CORP û2 Ì F| bEHlTflfl 00DDb7S 2 N -Channel Junction Field Effect Transistors ~T ~3/-17 G EN ER A L PURPOSE M AXIM UM R A T IN G S 'd s s IraA ) TYPE V G S off) (V ) Y fs (mmhos) Ciss* Crss NF (pF) (pF) (dB) C A SE Pd NO. b v gss (mW)


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    PDF 00DDb7S O-92DE O-92DA for transistor bf 245c BF 145 transistor transistor BF 245A BF 145 2n uhf fet micro to-237 transistor BC 310 transistor BC 321

    transistor g23 mosfet

    Abstract: 3680 MOSFET transistor g23 CF-922 1SS140 marking code wa sot 143 CF922
    Text: TELEFUNKEN ELECTRONIC fllC D ITilLitFQIKlKiMelectronic â^SQQ^b 000530b CF 922 Marked with: CF 4 Creative Technologies N-Channel-GaAs-MESFET-Tetrods Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz in common Gate 1 configuration;


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    PDF 000530b 569-GS transistor g23 mosfet 3680 MOSFET transistor g23 CF-922 1SS140 marking code wa sot 143 CF922

    ULN2003NA

    Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
    Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module


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    PDF TD62M TD62C TD/TB62 N29B3a 54S63PA 54597p 54598PÜ 2786A UDN2580a ULN2003NA transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    E 13003 TRANSISTOR

    Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
    Text: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique


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    PDF T-33-II 0IN41 I3-75. 15A3DIN E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


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    PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


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    PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    transistor bf 244

    Abstract: BF311 TFK U 2510 B TFK 241 a1241 transistor BF 245 transistor BF 243 tfk 2510 tfk 4 241 TFK 311
    Text: Siliz¡um-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on em itter configuration,


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    TRANSISTOR C 3223

    Abstract: TRANSISTOR C 1177 BT5179 NPN power transistor spice
    Text: Sáfe:-O O W :Oí •v MPS5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |uA to 30 m A range in common em itter or common base m ode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.


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    PDF MPS5179 MMBT5179 MPS5179 TRANSISTOR C 3223 TRANSISTOR C 1177 BT5179 NPN power transistor spice

    MMBTH10 Spice Model

    Abstract: No abstract text available
    Text: S iM E C D fC U C T O R MPSH10 MMBTH10 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 pA to 20 mA range in common emitter or common base mode of operations, and in low frequency


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    PDF MPSH10 MMBTH10 28E-18 MPSH10 MMBTH10 Spice Model

    BF 274 transistor

    Abstract: CBC 548 B CBC 184 b transistor up/rse cima BF 184 transistor
    Text: SIEM EN S NPN Silicon RF Transistor BFP 405 Featu res • • • For Low C urrent A pplicatio ns For O s cillators up to 12 GHz N oise Figure F = 1.15 dB at 1.8 G H z O utstand in g Gms = 22 dB at 1.8 G H z • • T ransition Frequ ency f j > 20 G H z G old m e talization for high reliability


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    PDF BFP405 BF 274 transistor CBC 548 B CBC 184 b transistor up/rse cima BF 184 transistor

    pulse h1251

    Abstract: H1251 MMBTH10 MPSH10 TRANSISTOR C 3223 MPS-H10 national MPSH10 s parameters
    Text: MPSH10 I MMBTH10 & D iscrete P O W E R & S ig n a l T echnologies National S e m i c o n d u c t o r " MPSH10 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 pA to 20 mA range in common


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    PDF MPSH10 MMBTH10 1000pF bSD113D pulse h1251 H1251 MMBTH10 MPSH10 TRANSISTOR C 3223 MPS-H10 national MPSH10 s parameters

    bf282

    Abstract: mps51
    Text: S E M IC O N D U C T O R tm / MMBT5179 / PN5179 MPS5179 PN5179 MMBT5179 SOT-23 Mark: 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |^A to 30 m A range in common em itter or comm on base m ode of operation, and in low frequency


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    PDF MPS5179 MMBT5179 PN5179 MMBT5179 OT-23 28E-18 bf282 mps51