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    TRANSISTOR BD650 Search Results

    TRANSISTOR BD650 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BD650 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    r3673

    Abstract: Y1031 mp150s R3672 r3673 Philippines TIC106D Thyristor TIC226D Philippines TIP43 transistor bf64 bd657
    Text: CIRCUIT PROTECTION PRODUCTS February, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team TO-220 Packaged Transistor, Thyristor & Overvoltage Protection Product Change Notification


    Original     		PDF O-220 BLBF39 MP150SG, KTMC-1030NAP, thyrisTIP42C-S TIP42-S TIP43 TIP43-S r3673 Y1031 mp150s R3672 r3673 Philippines TIC106D Thyristor TIC226D Philippines TIP43 transistor bf64 bd657

    r3673

    Abstract: Y1031 TIC106D Thyristor r3673 Philippines R3672 TIP43 BD657 transistor bf65 BF65-S transistor bf64
    Text: CIRCUIT PROTECTION PRODUCTS February, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team TO-220 Packaged Transistor, Thyristor & Overvoltage Protection Product Change Notification


    Original     		PDF O-220 BLBF39 MP150SG, KTMC-1030NAP, thyrisTIP42C-S TIP42-S TIP43 TIP43-S r3673 Y1031 TIC106D Thyristor r3673 Philippines R3672 TIP43 BD657 transistor bf65 BF65-S transistor bf64

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


    Original     		PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    Untitled

    Abstract: No abstract text available
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645

    Untitled

    Abstract: No abstract text available
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645

    Untitled

    Abstract: No abstract text available
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645

    BD649

    Abstract: BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD650 BD646 BD648
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645 BD649 BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD646 BD648

    bd648

    Abstract: bd652
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 bd648 bd652

    BD648

    Abstract: BD646 transistor bd650 bd650 bd649 BD65 BD645 BD647 BD649 BD650 BD651
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD648 BD646 transistor bd650 bd650 bd649 BD65 BD645 BD647 BD650 BD651

    BD652

    Abstract: No abstract text available
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is currently available, but


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD652

    BD646

    Abstract: No abstract text available
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD646

    transistor bd647

    Abstract: BD647 BD649 bd645 transistor BD645 BD651 bd648 BD646 BD650 BD652
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645 transistor bd647 BD647 BD649 bd645 transistor BD645 BD651 bd648 BD646 BD652

    transistor bd650

    Abstract: BD650 transistor bd648 BD648 BD646 BD645 BD647 BD649 BD651 BD652
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 transistor bd650 BD650 transistor bd648 BD648 BD646 BD645 BD647 BD651 BD652

    BD648

    Abstract: BD650 BD646 BD645 BD647 BD649 BD651 BD652 transistor bd650
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 TO-220 PACKAGE TOP VIEW ● 62.5 W at 25°C Case Temperature


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD648 BD650 BD646 BD645 BD647 BD651 BD652 transistor bd650

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    TRansistor 648

    Abstract: power factor PIC circuit transistor bd646 BD646 lco8a LCO 8A BD650 LE17 BD645 BD649
    Text: MAGNA Magna Park, Coventry Road, Lutterworth Leicestershire LE17 4JB, England Sales telephone: 01455 554711 Adm in telephone: 01455 552505 Fax: 01455 558843 FS » 2 3 » BD646; 648 BD650; 652 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n o lith ic D arlin gton c irc u it fo r audio o u tp u t stages and general


    OCR Scan     		PDF BD646; BD650; T0-220 BD645, BD647, BD649 BD651. BD646 Junc650; 7Z67332 TRansistor 648 power factor PIC circuit transistor bd646 lco8a LCO 8A BD650 LE17 BD645

    B0647

    Abstract: B0645 bd649 TAG 064
    Text: BOMS, BD647, BD649, BD651 NPN SILICON POWER DARUNG70NS Copyrtght C 1997, Power Innovations Limited, 1893 - REVISED M ARCH 1997 • Designed for Complementary Use with BD646, BD648, BD650 and BD652 • 62.5 W at 25°C Case Temperature


    OCR Scan     		PDF BD647, BD649, BD651 DARUNG70NS BD646, BD648, BD650 BD652 O-220 BD645 B0647 B0645 bd649 TAG 064

    transistor bd650

    Abstract: b0648 b0652 BD646 BD648 BD650 BD652 BD645 BD647 BD649
    Text: TBANSYS BD646, BD648, BD650, BD652 pnp silic o n p o w e r d a rlin g to n s mm fUCTROMICS LIMITED TO-220 PACKAGE TOP VIEW • Designed for Complementary Use with BD645, BD647, BD649 and BD651 • 62.5 W at 25°C Case Temperature B C • 8 A Continuous Collector Current


    OCR Scan     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-22C) BD646 transistor bd650 b0648 b0652 BD646 BD648 BD650 BD652 BD645 BD647

    50t65

    Abstract: bd650 BD644
    Text: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.


    OCR Scan     		PDF BD644; BD650; O-220 BD643, BD645, BD647, BD651. BD644 50t65 bd650 BD644

    Untitled

    Abstract: No abstract text available
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 T0-220 PACKAGE TOP VIEW • 62.5 W at 25 C Case Temperature


    OCR Scan     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 T0-220 BD646

    bd649

    Abstract: BD651
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 T0-220 PACKAGE TOP VIEW • 62.5 W at 25 C Case Temperature


    OCR Scan     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 T0-220 BD645 bd649

    D 1991 AR

    Abstract: BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode
    Text: BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b □ D M E C144 7 b 7 H P H I N T -33-31 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T 0 -2 2 0


    OCR Scan     		PDF BD644; BD650 711002b BD643, BD645, BD647, BD651. BD644 BD650; D 1991 AR BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode