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    TRANSISTOR BC RH Search Results

    TRANSISTOR BC RH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC RH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TCA4401

    Abstract: CD 4049 BP TCA440 IC CD 4027 diode zener BZX 61 C 10 tda4050 LD57C diode BAY61 receiver tca440 BAY61
    Text: Remote Control Appnote 34 1. Simple Infrared Remote Control with Low Current Consumption gate 1 drops below the minimum H-level threshold and thus the oscillation is interrupted. The time constant of R1C1-circuit is dimensioned for a burst length of 1 ms. The 1 nF capacitor,


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    isl 6251 schematic

    Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
    Text: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.


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    PDF Q62702-A772 Q62702-A731 Q62702-A773 OT-23 isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs

    Untitled

    Abstract: No abstract text available
    Text: S M V- 5 0 0 500 Wa t t , H i g h E ff ic i enc y, A C / D C P ow er Mo d u le s Miniature 4.59” x 2.4” x 0.5.” Size High Power Density up to 90.78W/ Inch ³ High Efficiency up to 90.5% at 230VAC 28V Low Output Noise Metal Baseplate Thermal Protection


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    PDF 230VAC SMV-xx-500 110Vac SMV-48-500 25degC

    PXF-10

    Abstract: 24VAC to 24VDC converter PXU-20 input output npn 547 transistor diagram Converter 230v to 24v Transistor z1 Current to voltage Converter 4-20mA to 0-10v 0-30V ac dc converters adjustable 0-30v power supply
    Text: Signal Converters & Isolators Process Signal To Frequency Converter PXF-10 DESCRIPTION WIRING DIAGRAM Signal converter for the conversion of an analogue process signal to a pulsating 50% duty cycle transistor output. A typical application would be to convert an analogue signal from a probe to a pulsating


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    PDF PXF-10 8/10kHz 40/50Hz 0V/-10- 10VDC/0 EN61010. IEC414 EN50081-1. EN50082-2. IEC68-2-3; PXF-10 24VAC to 24VDC converter PXU-20 input output npn 547 transistor diagram Converter 230v to 24v Transistor z1 Current to voltage Converter 4-20mA to 0-10v 0-30V ac dc converters adjustable 0-30v power supply

    hp 1002

    Abstract: No abstract text available
    Text: RH1085 3A Low Dropout Positive Adjustable Regulator U W W W U DESCRIPTIO ABSOLUTE The RH1085 positive adjustable regulator is designed to provide 3A with higher efficiency than currently available devices. All internal circuitry is designed to operate down


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    PDF RH1085 hp 1002

    RH1084

    Abstract: transistor BC 247
    Text: RH1084 5A Low Dropout Positive Adjustable Regulator U W W W U DESCRIPTIO ABSOLUTE The RH1084 positive adjustable regulator is designed to provide 5A with higher efficiency than currently available devices. All internal circuitry is designed to operate down


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    PDF RH1084 RH1084 transistor BC 247

    RH1085

    Abstract: No abstract text available
    Text: RH1085 3A Low Dropout Positive Adjustable Regulator DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1085 positive adjustable regulator is designed to provide 3A with higher efficiency than currently available devices. All internal circuitry is designed to operate down


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    PDF RH1085 RH1085 rh1085fc

    Dose

    Abstract: transistor BC 247 RH1085
    Text: RH1085 3A Low Dropout Positive Adjustable Regulator DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1085 positive adjustable regulator is designed to provide 3A with higher efficiency than currently available devices. All internal circuitry is designed to operate down


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    PDF RH1085 RH1085 Dose transistor BC 247

    1225 TRANSISTOR REPLACEMENT

    Abstract: No abstract text available
    Text: RH1084 5A Low Dropout Positive Adjustable Regulator OBSOLETE: FOR INFORMATION PURPOSES ONLY Contact Linear Technology for Potential Replacement DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1084 positive adjustable regulator is designed to provide 5A with higher efficiency than currently available


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    PDF RH1084 rh1084fd 1225 TRANSISTOR REPLACEMENT

    Untitled

    Abstract: No abstract text available
    Text: RH1085 3A Low Dropout Positive Adjustable Regulator DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1085 positive adjustable regulator is designed to provide 3A with higher efficiency than currently available devices. All internal circuitry is designed to operate down


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    PDF RH1085 RH1085 rh1085fc

    equivalent transistor bul128

    Abstract: HALL EFFECT 21E equivalent of transistor 2sc4106 2sC2335 TRANSISTOR equivalent Shortform Transistor Guide BUL208 BUF656B KSE13007 equivalent BUD620 BUL128 replacements
    Text: Bipolar Power Transistors Data Book 1997 General Information Data Sheets Addresses Table of Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    Transistor BC 227

    Abstract: No abstract text available
    Text: PD-9.1620 International I R Rectifier IRG4 BC 2 0 K-S prelim inary Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =1 Ops, @360V VCE start , T j = 125°C, V ge = 15V


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    PDF 554S2 Transistor BC 227

    BC 109 Transistor

    Abstract: BC 108 transistor bc 107 TRANSISTOR BC 109 BC 107 transistor transistor bc 325 CIL 108 bc 107b transistor BC 109C transistor BC 108 transistor
    Text: METAL-CAN & EPOXY TRANSISTORS CONTIN ENT AL DEVICE INDIA 32E D • E3Ö33T4 QQDDD13 4 ■ Jl.£ f-,2/ COMMERCIAL/ENTERTAINMENT APPLICATIONS Device VCEO VCBO VEBO Volts Volts Volts rhin min min hFE at bias 1C mA VCE Volts min/max ICM mA max PTA mW max ICBO VCE sat fT


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    PDF O-237 BC 109 Transistor BC 108 transistor bc 107 TRANSISTOR BC 109 BC 107 transistor transistor bc 325 CIL 108 bc 107b transistor BC 109C transistor BC 108 transistor

    BC 109C transistor

    Abstract: bc 106 transistor BC 107 npn transistor pin configuration TR BC 237 B CIL TRANSISTOR transistor BC 106 transistor BC 368 TRANSISTOR TO-106 transistor BC 108C BC 177A
    Text: METAL-CAN & EPOXY TRANSISTORS CONTIN ENT AL DEVICE INDIA 32E D • E3Ö33T4 QQDDD13 4 ■ Jl. £ f-,2/ COMMERCIAL/ENTERTAINMENT APPLICATIONS Device VCEO Volts min VCBO Volts min VEBO Volts rhin hFE at bias 1C mA VCE Volts min/max ICM mA max PTA mW max 625


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    PDF QQDDD13 lo-32 BC 109C transistor bc 106 transistor BC 107 npn transistor pin configuration TR BC 237 B CIL TRANSISTOR transistor BC 106 transistor BC 368 TRANSISTOR TO-106 transistor BC 108C BC 177A

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


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    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


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    PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    TRANSISTOR BC 208

    Abstract: No abstract text available
    Text: V -F /F - V CONVERTOR NJM 4151 T he NJM 4151 provide a sim ple low-cost m ethod o f A /D conversion. They have all the inherent advantages of the voltageto-frequency conversion technique. T he output o f NJM 4151 is a series o f pulses o f constant duration. T he frequency o f


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    PDF 500mW 300mW 000kHz/V TRANSISTOR BC 208

    EQUIVALENT TRANSISTOR bc109c

    Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


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    PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 EQUIVALENT TRANSISTOR bc109c TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


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    PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    74605

    Abstract: YS002 74604 sn200062
    Text: 6381725 TEXAS INSTR CAS I C / M E M O R Y 31D 74602 SN200060, SN200061, SN200062 SN200D63, SN200064, SN72501 THERMAL RESISTANCE MEASUREMENT DEVICES D2927, SEPTEMBER 1987 * Isolated Pow er Resistor Network • Internal Therm al Sensing Device S N 2 0 0 0 6 0 . . . D PACKAGE


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    PDF SN200060, SN200061, SN200062 SN200D63, SN200064, SN72501 D2927, YS002 74605 YS002 74604

    transistor BC 543

    Abstract: No abstract text available
    Text: 1A Adjustable Linear Regulator Description TheCS-5201-1 linear regulator provides 1A with an output volt­ age accuracy of -1 %. The device uses two external resistors to set the output voltage within a 1.25V to 5.5V range. This regulator is intended for use


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    PDF TheCS-5201-1 CS-5201 T0-220 transistor BC 543

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    BU 508 transistor

    Abstract: transistor bu Bu608A bu508 transistor BU 608 bu 508 sot-23 2603 transistor bc 488 BU608
    Text: TELEFUNKEN ELECTRONIC 1?E D • fl^EOO^b DOQTMbS BU 508 •*BU 508 A ■¡rHUHFMMKIM electronic Cf«aliy«Technologies T -32-/3 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in color TV receive« Features: • In triple diffusiion technique


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    PDF DIN41859 15A3DIN BU 508 transistor transistor bu Bu608A bu508 transistor BU 608 bu 508 sot-23 2603 transistor bc 488 BU608