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    TRANSISTOR BC 450 Search Results

    TRANSISTOR BC 450 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC 450 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2310

    Abstract: transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW
    Text: NPN Silicon AF Transistor BC 846 W . BC 850 W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W,


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    PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 C2310 transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW

    transistor Bc 580

    Abstract: TRANSISTOR BC 450 pnp transistor BC 660
    Text: BC 847BL3, BC 848BL3 NPN Silicon AF Transistor Preliminary data  For AF input stage and driver applications 3  High current gain  Low collector-emitter saturation voltage 1  complementary types: BC 857BL3, 2 BC 858BL3 PNP Type Marking Pin Configuration


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    PDF 847BL3, 848BL3 857BL3, 858BL3 847BL3 transistor Bc 580 TRANSISTOR BC 450 pnp transistor BC 660

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL


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    PDF BC317/A/B C-120 Rev220103E

    BC317 transistor

    Abstract: transistor BC317 BC317 BC317A BC317B bc 357 transistor pin
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL


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    PDF BC317/A/B C-120 Rev220103E BC317 transistor transistor BC317 BC317 BC317A BC317B bc 357 transistor pin

    BC317

    Abstract: transistor BC317 BC317B BC317 transistor BC317A BC317B equivalent bc 357 transistor
    Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage


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    PDF QSC/L-000019 BC317/A/B C-120 Rev220103E BC317 transistor BC317 BC317B BC317 transistor BC317A BC317B equivalent bc 357 transistor

    transistor BC 450

    Abstract: marking 1DS sot363 1ds sot
    Text: BC 846S NPN Silicon AF Transistor Array Preliminary data • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code


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    PDF OT-363 Q62702- Nov-27-1996 transistor BC 450 marking 1DS sot363 1ds sot

    bc 104 npn transistor

    Abstract: TRANSISTOR BC 6 pnp
    Text: BC 846PN NPN/PNP Silicon AF Transistor Array Preliminary data • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


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    PDF 846PN Q62702- OT-363 Nov-27-1996 bc 104 npn transistor TRANSISTOR BC 6 pnp

    transistor c 557

    Abstract: TRANSISTOR C 557 B B 560 PNP TRANSISTOR transistor B 560 transistor c 558 TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR
    Text: BC556/557/558/559/560 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier • High Voltage: BC556, VCEO = -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings


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    PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor c 557 TRANSISTOR C 557 B B 560 PNP TRANSISTOR transistor B 560 transistor c 558 TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR

    VPS05604

    Abstract: Bc 140 transistor
    Text: BC 846S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604


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    PDF VPS05604 EHA07178 OT-363 EHP00381 EHP00367 Nov-08-1999 EHP00365 EHP00364 VPS05604 Bc 140 transistor

    transistor BC 660

    Abstract: 846U H12E
    Text: BC 846U NPN Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197


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    PDF VPW09197 EHA07178 SC-74 EHP00381 EHP00367 Nov-08-1999 EHP00365 EHP00364 transistor BC 660 846U H12E

    Q62702-C2537

    Abstract: VPS05604 846P
    Text: BC 846PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 1 Tape loading orientation


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    PDF 846PN VPS05604 OT-363 Q62702-C2537 EHP00365 EHP00364 EHP00368 EHP00369 Sep-07-1998 Q62702-C2537 VPS05604 846P

    LT 450 mbr

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W,


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    PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702 LT 450 mbr

    transistor c2311

    Abstract: transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660
    Text: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • • • • High current gain Low coliector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,


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    PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 62702-C2311 transistor c2311 transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660

    transistor bc 487

    Abstract: transistor bc 488 sot-323 transistor marking code 15
    Text: SIEM ENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,


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    PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 transistor bc 487 transistor bc 488 sot-323 transistor marking code 15

    transistor vc 548

    Abstract: Transistor Bc54
    Text: SyrnSEMi SYM5EMI SEMICONDUCTOR BC 546, A, BC 547 A, BC 548, A, T O -92 B, C B, C B, C Plastic Encapsulate Transistors TRANSISTOR NPN TO — 92 FEATURES Power dissipation (Tamb=25 °C ) PCM : 0.625 W Collector current 1cm : 0.1 A Collector base voltage 1. COLLECTOR


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    PDF BC546 BC547 BC548 270TYP 050TYP transistor vc 548 Transistor Bc54

    TRANSISTOR BC 413

    Abstract: 414 transistor TRANSISTOR BC 413 npn TRANSISTOR BC 414 transistor c 413 bc 330 transistor TRANSISTOR BC 135 TRANSISTOR BC 413 b BC413C BC414C
    Text: *BC413 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , ßQ TRANSISTOR NPN S ILIC IU M PLA N A R E P IT A X IA L sfc Preferred device D is p o s itif recommandé BC 413 and BC 414 are very low noise transis­ tors intended for input stages in audio frequen­ cy amplifiers.


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    PDF BC413 BC414 CB-76 indi13 TRANSISTOR BC 413 414 transistor TRANSISTOR BC 413 npn TRANSISTOR BC 414 transistor c 413 bc 330 transistor TRANSISTOR BC 135 TRANSISTOR BC 413 b BC413C BC414C

    transistor BC 171

    Abstract: TRANSISTOR BC 173 BC 171 NPN transistor transistor bc 172 BC173B BC173C BC172B LVCEO-50V BC low noise bc 104 npn transistor
    Text: BC 171 . BC 172 • BC 173 NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR J FEATURES • H ig h • A v a ila b le Low B re a k d o w n in N o is e MECHANICAL OUTLINE APPLICATIONS V o lt a g e D iffe r e n t I-V c e o • * * • 5 0 V C u rre n t


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    PDF LVCEO----50V BCI73) transistor BC 171 TRANSISTOR BC 173 BC 171 NPN transistor transistor bc 172 BC173B BC173C BC172B LVCEO-50V BC low noise bc 104 npn transistor

    bc 104 npn transistor

    Abstract: BC 104 transistor transistor BC 171 BC173B BC173C BC172C transistor bc 172 TRANSISTOR BC 173 BC172B BC171B
    Text: BC 171 • BC 172 • BC 173 NPN HIGH GAIN LOW NOISE SILICON H ig h B r e a k d o w n V o lt a g e • A v a ila b le • Low in N o is e MECHANICAL OUTLINE APPLICATIONS FEATURES • PLANAR EPITAXIAL TRANSISTOR L V CEO 50V D i f f e r e n t C u r r e n t G a in


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    PDF BCI73) 200Hz 30Hzto BC171 BC172B BC173B BC172C BC173C bc 104 npn transistor BC 104 transistor transistor BC 171 transistor bc 172 TRANSISTOR BC 173 BC171B

    transistor BC 171

    Abstract: transistor BC 172B BC 1738 TRANSISTOR BC 171 NPN transistor BC173C BC173B BC173 BC171 BC172A TRANSISTOR MS 173 TE
    Text: BC 171 . BC 172 • BC 173 NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR J B re a k d o w n • A v a ila b le Low in N o is e M E C H A N IC A L O U T L IN E A P P L IC A T IO N S FEATURES • H ig h V o lta g e D iffe r e n t C u rre n t 4dB


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    PDF

    846PN

    Abstract: VQE 11E
    Text: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


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    PDF 846PN EHA07193 846PN Q62702-C2537 OT-363 VQE 11E

    LB 122 transistor To-92

    Abstract: BC368 BG368 B-G368 Philips 119 Silicon Epitaxial Planar Transistor philips
    Text: b'iE D • 1^53=131 □DB7S3b TIE I IAPX BC368 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92envelope, intended for low-voltage, high current L F applications. BC368/BC 369 is the matched complementary pair suitable fo r class-B audio output stages up to 3 W.


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    PDF BC368 O-92envelope, BC368/BC369 LB 122 transistor To-92 BC368 BG368 B-G368 Philips 119 Silicon Epitaxial Planar Transistor philips

    la 7518

    Abstract: TFK 450 BCW60C BCW60D BCW60
    Text: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen


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    PDF BCW60C BCW60D 200Hz la 7518 TFK 450 BCW60

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC 846S NPN Silicon A F Transistor Array • For A F input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package H FI R


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    PDF Q62702-C2529 OT-363

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


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    PDF 846PN 62702-C253x