diode BB102
Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003G
diode BB102
RF TRANSISTOR 10GHZ low noise
Tv tuner Diagram LG RF
VCO 9GHZ 10GHZ
Transistor GaAs FET Low Noise NF 1.6dB
2SC4784F
ultra high frequency FETs or transistors
A08 smd transistor
lg tv electronic diagram
SMD TRANSISTOR fet
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3SK238
Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003E
3SK238
g1 smd transistor
small signal audio FET
BB303
smd transistor g1
SMD Transistor 070 R
hitachi all fet audio application
hitachi DISCRETE DUAL fet
dual transistor 6 pin SMD 327
Hitachi 2SJ
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HITACHI SMD TRANSISTORS
Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,
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ADE-A08-003E
HITACHI SMD TRANSISTORS
small signal audio FET
hitachi small signal
Tv tuner Diagram LG RF
nf transistor array
g1 smd TRANSISTOR
BB304
3SK238
BB405 equivalent
smd 015
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BLV57
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE fciTE D • bb53T31 002^050 bb2 BLV57 U.H.F. LINEAR PUSH-PULL POWER TRANSISTOR Two n-p-n silicon planar epitaxial transistor sections in one envelope to be used as push-pull amplifier, prim arily intended fo r use in linear u.h.f. television transmitters and transposers.
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bb53T31
BLV57
BLV57
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Philips 2222 050 capacitor
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated
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BFG135
OT223
MSB002
OT223.
711062b
110fi2b
711Da2b
Philips 2222 050 capacitor
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BFR92A
Abstract: bft92 die transistor P2P marking code P2p SOT23 BFR90A BFT92 TRANSISTOR FQ
Text: DISCRETE SEMICONDUCTORS BFR92A NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 Philips Semiconductors 1997 Oct 29 PHILIPS Philips Semiconductors Product specification NPN 5 GHz wideband transistor
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BFR92A
BFT92.
collector-emittFR92A
bft92 die
transistor P2P
marking code P2p SOT23
BFR90A
BFT92
TRANSISTOR FQ
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BFR134
Abstract: 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379
Text: Product specification Philips Semiconductors BFR134 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar
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BFR134
BFR134
2322 712
2322-712
Philips fr 153 30
philips resistor 2322 763
Transistor 933
2222 372
transistor J 3305
109 transistor 33 db
2222 379
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A 673 transistor
Abstract: LB 122 NPN TRANSISTOR SOT533 100pd PHE13002AU TRANSISTOR AH SOT-533 transistor aa a TRANSISTOR 106 d1 SILICON DIFFUSED POWER TRANSISTOR
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
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PHE13002AU
OT533
OT533
A 673 transistor
LB 122 NPN TRANSISTOR
SOT533
100pd
PHE13002AU
TRANSISTOR AH
SOT-533
transistor aa a
TRANSISTOR 106 d1
SILICON DIFFUSED POWER TRANSISTOR
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Response AA0482
Abstract: 49/Response AA0482
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this
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DSP56303
Response AA0482
49/Response AA0482
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11AP
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
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BUT11APX
11AP
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BUJ301A
Abstract: T0220AB
Text: Objective specification Philips Semiconductors Silicon Diffused Power Transistor BUJ301A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
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BUJ301A
T0220AB
T0220AB;
T0220
BUJ301A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
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BUJ103A
T0220A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ204A
T0220A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ303A
T0220A
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
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BUJ105A
T0220A
T0220AB
200nH.
T0220AB;
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esm 30 450 v
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ204AX
esm 30 450 v
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BUJ301
Abstract: BUJ301AX
Text: Objective specification Philips Semiconductors Silicon Diffused Power Transistor BUJ301AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ301
Colle20
OT186A;
BUJ301AX
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ302AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ302AX
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ202AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ202AX
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BUJ103AX
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ103AX
BUJ103AX
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NDS 40-20
Abstract: BUK437-500B DIODE BB2
Text: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711002b
BUK437-500B
NDS 40-20
BUK437-500B
DIODE BB2
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NPN bias ESM
Abstract: BUJ105AX
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ105AX
NPN bias ESM
BUJ105AX
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BUJ105AX
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ105AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ105AX
BUJ105AX
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ303AX
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