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    TRANSISTOR B772 BR Search Results

    TRANSISTOR B772 BR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B772 BR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    br b772

    Abstract: TRANSISTOR b772 TRANSISTOR br b772 b772 p B772 b772 transistor pnp b772 B772 equivalent b772 pnp TRANSISTOR b772 br
    Text: B772 B772 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 625 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: -3 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


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    -100mA 10MHz br b772 TRANSISTOR b772 TRANSISTOR br b772 b772 p B772 b772 transistor pnp b772 B772 equivalent b772 pnp TRANSISTOR b772 br PDF

    b772

    Abstract: TRANSISTOR b772
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-252 FEATURES •Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


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    O-252 O-252 10MHz b772 TRANSISTOR b772 PDF

    TRANSISTOR b772

    Abstract: B772 equivalent B772 B772 PNP pnp b772 B772 datasheet b772 transistor transistor PNP b772
    Text: PNP TRANSISTOR B772 3.0A z z z AF OUTPUT AMPLIFIER FOR DC-DC CONVERTER FOR CAMERA MOTOR DRIVER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(Ta=25℃) PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage BVceo Collector-Base Breakdown Voltage BVcbo Emitter-Base Breakdown Voltage


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER Low Speed Switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit


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    O-251 O-251 -10mA 10MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 B772 TRANSISTOR PNP FEATURES 1. EMITTER Low speed switching 2. COLLECTOR Value Units VCBO Collector-Base Voltage Parameter -40 V VCEO Collector-Emitter Voltage


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    O-126 O-126 PDF

    B772 TO-252

    Abstract: br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 B772 TRANSISTOR b772 pnp B772 datasheet B772 equivalent pnp b772
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors TO-252 B772 TRANSISTOR PNP FEATURES 1. BASE •Low speed switching 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


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    O-252 O-252 -100A 10MHz B772 TO-252 br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 B772 TRANSISTOR b772 pnp B772 datasheet B772 equivalent pnp b772 PDF

    TO-251 B772

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors B772 TO-251 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


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    O-251 O-251 10MHz TO-251 B772 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors B772 TO- 126C TRANSISTOR( PNP ) FEATURES •Low Speed Switching 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS* Ta=25 ℃ unless otherwise noted Symbol Parameter


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    O-126C -100mA 10MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors B772 TO-252 TRANSISTOR PNP FEATURES 1. BASE Low Speed Switching 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit


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    O-252 O-252 -10mA 10MHz PDF

    TO-251 B772

    Abstract: br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 B772 equivalent B772 PNP b772 transistor transistors b772
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


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    O-251 O-251 -100A 10MHz TO-251 B772 br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 B772 equivalent B772 PNP b772 transistor transistors b772 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


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    O-251 O-251 10MHz PDF

    b772

    Abstract: BR B772
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-252 FEATURES •Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


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    O-252 O-252 10MHz b772 BR B772 PDF

    b772 p

    Abstract: C01A TRANSISTOR B772 sot-89 br b772 TRANSISTOR b772 transistors b772 b772 pnp b772 B772 TRANSISTOR SOT-89
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLETOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage


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    OT-89 OT-89 -100mA 10MHz b772 p C01A TRANSISTOR B772 sot-89 br b772 TRANSISTOR b772 transistors b772 b772 pnp b772 B772 TRANSISTOR SOT-89 PDF

    br b772

    Abstract: b772 transistor TRANSISTOR br b772 b772 pnp b772 TRANSISTOR b772 transistors b772 b772 pnp
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-126 FEATURES Power dissipation 1. EMITTER 1.25 PCM: W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO:


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    O-126 O-126 -100mA 10MHz br b772 b772 transistor TRANSISTOR br b772 b772 pnp b772 TRANSISTOR b772 transistors b772 b772 pnp PDF

    B772

    Abstract: TRANSISTOR br b772 TRANSISTOR B772 sot-89
    Text: SOT-89 Plastic-Encapsulate Transistors B772 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLETOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range


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    OT-89 OT-89 -100mA 10MHz B772 TRANSISTOR br b772 TRANSISTOR B772 sot-89 PDF

    b772 p

    Abstract: br b772 TRANSISTOR b772 B772 transistors b772 pnp b772 b772 transistor b772 pnp TRANSISTOR br b772 DSA0026811
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 625 mW (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO:


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    -100mA 10MHz b772 p br b772 TRANSISTOR b772 B772 transistors b772 pnp b772 b772 transistor b772 pnp TRANSISTOR br b772 DSA0026811 PDF

    br b772

    Abstract: TRANSISTOR b772 B772 TRANSISTOR br b772 b772 transistor B772 datasheet B772 equivalent B772 PNP transistors b772 b772 to 126
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-126 FEATURES •Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


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    O-126 O-126 -10mA -100A 10MHz br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 b772 transistor B772 datasheet B772 equivalent B772 PNP transistors b772 b772 to 126 PDF

    BR B772

    Abstract: b772 npn B772 TRANSISTOR b772 TRANSISTOR br b772 b772 china B772 TO-92 1A60
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn B772 TRANSISTOR NPN TO-92 FEATURES Low speed switching 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter Value Units


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    -100A -100mA 10MHz BR B772 b772 npn B772 TRANSISTOR b772 TRANSISTOR br b772 b772 china B772 TO-92 1A60 PDF

    b772

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR( PNP ) TO—126 FEATURES •Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


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    O-126 specified-100 -100mA 10MHz b772 PDF

    B772

    Abstract: br b772 TRANSISTOR b772 B772 PNP B772 SOT-89 sot 89 b772 transistors b772 B772 datasheet B772 equivalent
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 TRANSISTOR(PNP) SOT-89 FEATURES Low speed switching 1 2 3 1. BASE 1 2. COLLETOR 2 MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units


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    OT-89 OT-89 -10mA -100A 10MHz B772 br b772 TRANSISTOR b772 B772 PNP B772 SOT-89 sot 89 b772 transistors b772 B772 datasheet B772 equivalent PDF

    TRANSISTOR b772

    Abstract: br b772 B772 PNP B772 TRANSISTOR br b772 TO-251 B772 R/SmD transistor b772
    Text: B772 PNP TO-251 Transistor TO-251 1. EMITTER 2. COLLECTOR 3 BASE 1 2 3 Features Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO


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    O-251 O-251 -100A -10mA -100A 10MHz TRANSISTOR b772 br b772 B772 PNP B772 TRANSISTOR br b772 TO-251 B772 R/SmD transistor b772 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 B772 TRANSISTOR PNP FEATURES 1. EMITTER Low Speed Switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit VCBO Collector-Base Voltage


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    O-126 O-126 -10mA 10MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR(PNP) SOT-89-3L FEATURES Low speed switching 1 2 3 1. BASE 2. COLLETOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value


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    OT-89-3L OT-89-3L -10mA 10MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 TRANSISTOR(PNP) SOT-89 FEATURES Low speed switching 1 2 3 1. BASE 1 2. COLLETOR 2 MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units


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    OT-89 OT-89 10MHz PDF