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    TRANSISTOR B6 Search Results

    TRANSISTOR B6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor b1

    Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
    Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage


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    PDF HLB124 HLB124 O-220 HLB124L QW-R203-029 transistor b1 NPN Transistor 600V 1S1000 utchlb124

    NPN Transistor 600V TO-220

    Abstract: ULB124G ulb124
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES * High Speed Switching


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    PDF ULB124 ULB124 O-220 ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T O-251 QW-R213-013 NPN Transistor 600V TO-220 ULB124G

    HLB122I

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching


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    PDF HE9030 HLB122I HLB122I O-251

    HLB122D

    Abstract: TP 1322 Transistor C G 774 6-1 transistor k 2837
    Text: HI-SINCERITY Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HLB122D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122D is a medium power transistor designed for use in switching


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    PDF HD200206 HLB122D HLB122D O-126ML 183oC 217oC 260oC TP 1322 Transistor C G 774 6-1 transistor k 2837

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1  TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications.  FEATURES 1 * High Speed Switching


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    PDF ULB124 O-126 ULB124 O-220 ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T ULB124L-xx-T60-K ULB124G-xx-T60-K

    ULB124

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 „ TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES 1 * High Speed Switching


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    PDF ULB124 O-126 ULB124 O-220 ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T ULB124L-xx-T60-T ULB124G-xx-T60-T

    BFU725F

    Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
    Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


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    PDF BFU725F OT343F JESD625-A BFU725F germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power

    BULD39D

    Abstract: BULD39D-1 BULD39DT4 JESD97
    Text: BULD39D-1 BULD39DT4 High Voltage Fast-Switching NPN Power Transistor General features • NPN transistor ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ High ruggedness ■ Surface-mounting DPAK TO-252 power


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    PDF BULD39D-1 BULD39DT4 O-252) O-251) O-251 O-252 2002/93/EC BULD39D BULD39D-1 BULD39DT4 JESD97

    HCPL-2530

    Abstract: 2531 TA 2503 6N135 6N136 HCPL-2503 HCPL-2531 HCPL-4502 a 2530 opto HCPL2531
    Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.


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    PDF 6N135, 6N136 HCPL-2503 HCPL-4502 HCPL-2530 HCPL-2531 HCPL-4502/HCPL-2503, 6N135/6 HCPL-2530/HCPL-2531 SS16/1, HCPL-2530 2531 TA 2503 6N135 6N136 HCPL-2503 HCPL-2531 HCPL-4502 a 2530 opto HCPL2531

    A 2531 optocoupler

    Abstract: a 2530 opto hcpl2530sd 2531 2530 OPTO HCPL-4502 HCPL2531
    Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.


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    PDF 6N135, 6N136 HCPL-2503 HCPL-4502 HCPL-4502/HCPL-2503, 6N135/6 HCPL-2530/HCPL-2531 HCPL-2530 HCPL-2531 HCPL-4502 A 2531 optocoupler a 2530 opto hcpl2530sd 2531 2530 OPTO HCPL2531

    pulse transformer 4502

    Abstract: A 2531 optocoupler 4502S fairchild 1011 opto E90700 HCPL4502 HCPL2531
    Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.


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    PDF 6N135, 6N136 HCPL-2503 HCPL-4502 HCPL-4502/HCPL-2503, 6N135/6 HCPL-2530/HCPL-2531 HCPL-2530 HCPL-2531 HCPL-4502 pulse transformer 4502 A 2531 optocoupler 4502S fairchild 1011 opto E90700 HCPL4502 HCPL2531

    pulse transformer 4502

    Abstract: v027 6N136S HCPL2531
    Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.


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    PDF 6N135, 6N136 HCPL-2503 HCPL-4502 HCPL-4502/HCPL-2503, 6N135/6 HCPL-2530/HCPL-2531 HCPL-2530 HCPL-2531 E90700, pulse transformer 4502 v027 6N136S HCPL2531

    4502 C

    Abstract: 6N136S HCPL2531
    Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.


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    PDF 6N135, 6N136 HCPL-2503 HCPL-4502 HCPL-4502/HCPL-2503, 6N135/6 HCPL-2530/HCPL-2531 HCPL-2530 HCPL-2531 4502 C 6N136S HCPL2531

    pulse transformer 4502

    Abstract: a 2530 opto HCPL-2531 4502 C HCPL2531 A 2531 HCPL-4502 HCPL4502 Oxford Electrical Products TA 2503
    Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.


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    PDF 6N135, 6N136 HCPL-2503 HCPL-4502 HCPL-2530 HCPL-2531 HCPL-4502/HCPL-2503, 6N135/6 HCPL-2530/HCPL-2531 pulse transformer 4502 a 2530 opto HCPL-2531 4502 C HCPL2531 A 2531 HCPL-4502 HCPL4502 Oxford Electrical Products TA 2503

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BULD128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDER CODES : BULD128DA-1 AND BULD128DB-1 . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS


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    PDF BULD128D-1 BULD128DA-1 BULD128DB-1

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/BISCRETE bRE D bb53331 □□30630 804 B A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope


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    PDF bb53331 OT223 BUK581-60A bbS3831 D030fl35 OT223.

    NTE74LS244

    Abstract: NTE74LS248 NTE74LS247 NTE74C221 NTE74HC244 NTE74LS245 NTE74LS240 NTE74HC259 NTE74HCT244 NTE74LS221
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74199 24-Lead DIP, See Diag. 252 8-B it Bidirectional Universal Shift Register NTE74221, 16-Lead DIP, See Diag. 249 NTE74C221, NTE74LS221 Dual Monostable Multivibrator Q V cc ^ Shift/Load 3 QH ^ Input G


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    PDF NTE74199 24-Lead NTE74221, 16-Lead NTE74C221, NTE74LS221 NTE74C240, 20-Lead NTE74HC240, NTE74HCT240, NTE74LS244 NTE74LS248 NTE74LS247 NTE74C221 NTE74HC244 NTE74LS245 NTE74LS240 NTE74HC259 NTE74HCT244 NTE74LS221

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    transistor 6b6

    Abstract: PT651
    Text: ISOCOM LTD I Optolink OPTOCOUPLERS EMITTER / DETECTOR PAIRS Transistor Output Part Number Features PT650 A Infrared Emitting Diode PT651 A Photo Transistor tr ic c°n Ip » 20mA V c e = 10V MIN CmA) tf VcESat Ip = 20mA Ic = 1m A M AX V) Ver. -sv. ir. «imA. Ri =ioon


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    PDF PT650 PT651 FT652A PT653A transistor 6b6

    ST C732

    Abstract: transistor C732 C732 BCX23 Q62702-C732
    Text: BCX 23 PNP-Silizium NF-Transistor B C X 2 3 ist ein epitaktischer PNP-Silizium -Planar-Transistor im Metall-Gehäuse 1 8 A 3 D IN 41 876 T O -1 8 . Besonders in N F-V or- und Treiberstufen, sow ie für universelle A n w e n ­ dung bei höheren Sperrspannungen geeignet.


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    PDF BCX23 Q62702-C732 AU-50Â ST C732 transistor C732 C732 Q62702-C732

    62003F

    Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
    Text: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F


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    PDF 40Series, 226Devices) 62003P/PA 2003A 2004A 62003F/FB/ 62004F/FB/ 16bit TB62705BF DIP24 62003F 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852

    transistor BC 339

    Abstract: transistor BC 336 BC190 bc 339 transistor BC 55 MC 340 transistor transistor bc 337 BC 170 transistor capacite 335
    Text: NPN ÇILICON TRANSISTOR TRANSISTOR NPN S ILIC IU M Switching and amplifier Available on A and B groups 64 V V CEO Commutation et amplification Utifisabfe pour les groupes A et B 200 mA 'c m i 125-260 A h21e 2 mA-5 V 1240-500 B Case TO-18 • See outline drawing ÇB-6 on last pages


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    transistor KSA

    Abstract: AF109R
    Text: ESC D • flEBShOS 0ÛÛ4G53 0 « S I E G A F 109 R PNP Germanium RF Transistor SIEMENS AKT IE Nû ES EL LSC H AF 04053 D - T - 3 /'0 ~ 7 for A G C input stages up to 260 MHz AF 109 R is a germanium PNP RF mesa transistor in TO 72 case 18 A 4 DIN 41876 .


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    PDF Q60106-X109-R1 Q004QS? AF109R transistor KSA AF109R

    J6 transistor

    Abstract: 2SD1513 PA33 2sb1068 2sb10681
    Text: NEC j Silicon Transistor 2SD1513 NPNxfc NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier #* /FEA TUR ES *fffi£IU/PACKAGE DIMENSIONS o \&W±jzWimMM]cn> ^ — 9 — Y 7 4 7\ v v 4 -rm k7 U nit: mm j K K7-f 7"%f, & t i m h FEX l& = > u 7 ^ S & f t l l c l l t r f o


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    PDF 2SD1513 2SB10681 PWS10 J6 transistor 2SD1513 PA33 2sb1068