transistor b1
Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage
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HLB124
HLB124
O-220
HLB124L
QW-R203-029
transistor b1
NPN Transistor 600V
1S1000
utchlb124
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NPN Transistor 600V TO-220
Abstract: ULB124G ulb124
Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES * High Speed Switching
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ULB124
ULB124
O-220
ULB124L-xx-TA3-T
ULB124G-xx-TA3-T
ULB124L-xx-TM3-T
ULB124G-xx-TM3-T
O-251
QW-R213-013
NPN Transistor 600V TO-220
ULB124G
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HLB122I
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching
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HE9030
HLB122I
HLB122I
O-251
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HLB122D
Abstract: TP 1322 Transistor C G 774 6-1 transistor k 2837
Text: HI-SINCERITY Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HLB122D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122D is a medium power transistor designed for use in switching
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HD200206
HLB122D
HLB122D
O-126ML
183oC
217oC
260oC
TP 1322
Transistor C G 774 6-1
transistor k 2837
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES 1 * High Speed Switching
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ULB124
O-126
ULB124
O-220
ULB124L-xx-TA3-T
ULB124G-xx-TA3-T
ULB124L-xx-TM3-T
ULB124G-xx-TM3-T
ULB124L-xx-T60-K
ULB124G-xx-T60-K
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ULB124
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES 1 * High Speed Switching
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ULB124
O-126
ULB124
O-220
ULB124L-xx-TA3-T
ULB124G-xx-TA3-T
ULB124L-xx-TM3-T
ULB124G-xx-TM3-T
ULB124L-xx-T60-T
ULB124G-xx-T60-T
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BFU725F
Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU725F
OT343F
JESD625-A
BFU725F
germanium rf transistor
code marking s20 TRANSISTOR
germanium transistor
germanium transistors NPN
SOT343F
germanium transistor npn
LNB ka band
Germanium power
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BULD39D
Abstract: BULD39D-1 BULD39DT4 JESD97
Text: BULD39D-1 BULD39DT4 High Voltage Fast-Switching NPN Power Transistor General features • NPN transistor ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ High ruggedness ■ Surface-mounting DPAK TO-252 power
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BULD39D-1
BULD39DT4
O-252)
O-251)
O-251
O-252
2002/93/EC
BULD39D
BULD39D-1
BULD39DT4
JESD97
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HCPL-2530
Abstract: 2531 TA 2503 6N135 6N136 HCPL-2503 HCPL-2531 HCPL-4502 a 2530 opto HCPL2531
Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.
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6N135,
6N136
HCPL-2503
HCPL-4502
HCPL-2530
HCPL-2531
HCPL-4502/HCPL-2503,
6N135/6
HCPL-2530/HCPL-2531
SS16/1,
HCPL-2530
2531
TA 2503
6N135
6N136
HCPL-2503
HCPL-2531
HCPL-4502
a 2530 opto
HCPL2531
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A 2531 optocoupler
Abstract: a 2530 opto hcpl2530sd 2531 2530 OPTO HCPL-4502 HCPL2531
Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.
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6N135,
6N136
HCPL-2503
HCPL-4502
HCPL-4502/HCPL-2503,
6N135/6
HCPL-2530/HCPL-2531
HCPL-2530
HCPL-2531
HCPL-4502
A 2531 optocoupler
a 2530 opto
hcpl2530sd
2531
2530 OPTO
HCPL2531
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pulse transformer 4502
Abstract: A 2531 optocoupler 4502S fairchild 1011 opto E90700 HCPL4502 HCPL2531
Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.
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6N135,
6N136
HCPL-2503
HCPL-4502
HCPL-4502/HCPL-2503,
6N135/6
HCPL-2530/HCPL-2531
HCPL-2530
HCPL-2531
HCPL-4502
pulse transformer 4502
A 2531 optocoupler
4502S
fairchild 1011 opto
E90700
HCPL4502
HCPL2531
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pulse transformer 4502
Abstract: v027 6N136S HCPL2531
Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.
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6N135,
6N136
HCPL-2503
HCPL-4502
HCPL-4502/HCPL-2503,
6N135/6
HCPL-2530/HCPL-2531
HCPL-2530
HCPL-2531
E90700,
pulse transformer 4502
v027
6N136S
HCPL2531
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4502 C
Abstract: 6N136S HCPL2531
Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.
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6N135,
6N136
HCPL-2503
HCPL-4502
HCPL-4502/HCPL-2503,
6N135/6
HCPL-2530/HCPL-2531
HCPL-2530
HCPL-2531
4502 C
6N136S
HCPL2531
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pulse transformer 4502
Abstract: a 2530 opto HCPL-2531 4502 C HCPL2531 A 2531 HCPL-4502 HCPL4502 Oxford Electrical Products TA 2503
Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.
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6N135,
6N136
HCPL-2503
HCPL-4502
HCPL-2530
HCPL-2531
HCPL-4502/HCPL-2503,
6N135/6
HCPL-2530/HCPL-2531
pulse transformer 4502
a 2530 opto
HCPL-2531
4502 C
HCPL2531
A 2531
HCPL-4502
HCPL4502
Oxford Electrical Products
TA 2503
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BULD128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDER CODES : BULD128DA-1 AND BULD128DB-1 . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS
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BULD128D-1
BULD128DA-1
BULD128DB-1
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/BISCRETE bRE D bb53331 □□30630 804 B A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope
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bb53331
OT223
BUK581-60A
bbS3831
D030fl35
OT223.
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NTE74LS244
Abstract: NTE74LS248 NTE74LS247 NTE74C221 NTE74HC244 NTE74LS245 NTE74LS240 NTE74HC259 NTE74HCT244 NTE74LS221
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74199 24-Lead DIP, See Diag. 252 8-B it Bidirectional Universal Shift Register NTE74221, 16-Lead DIP, See Diag. 249 NTE74C221, NTE74LS221 Dual Monostable Multivibrator Q V cc ^ Shift/Load 3 QH ^ Input G
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NTE74199
24-Lead
NTE74221,
16-Lead
NTE74C221,
NTE74LS221
NTE74C240,
20-Lead
NTE74HC240,
NTE74HCT240,
NTE74LS244
NTE74LS248
NTE74LS247
NTE74C221
NTE74HC244
NTE74LS245
NTE74LS240
NTE74HC259
NTE74HCT244
NTE74LS221
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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transistor 6b6
Abstract: PT651
Text: ISOCOM LTD I Optolink OPTOCOUPLERS EMITTER / DETECTOR PAIRS Transistor Output Part Number Features PT650 A Infrared Emitting Diode PT651 A Photo Transistor tr ic c°n Ip » 20mA V c e = 10V MIN CmA) tf VcESat Ip = 20mA Ic = 1m A M AX V) Ver. -sv. ir. «imA. Ri =ioon
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PT650
PT651
FT652A
PT653A
transistor 6b6
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ST C732
Abstract: transistor C732 C732 BCX23 Q62702-C732
Text: BCX 23 PNP-Silizium NF-Transistor B C X 2 3 ist ein epitaktischer PNP-Silizium -Planar-Transistor im Metall-Gehäuse 1 8 A 3 D IN 41 876 T O -1 8 . Besonders in N F-V or- und Treiberstufen, sow ie für universelle A n w e n dung bei höheren Sperrspannungen geeignet.
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BCX23
Q62702-C732
AU-50Â
ST C732
transistor C732
C732
Q62702-C732
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62003F
Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
Text: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F
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40Series,
226Devices)
62003P/PA
2003A
2004A
62003F/FB/
62004F/FB/
16bit
TB62705BF
DIP24
62003F
62004f
62004A
TD62801P
62004AP
A 107 transistor
TD62XXX
62c852
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transistor BC 339
Abstract: transistor BC 336 BC190 bc 339 transistor BC 55 MC 340 transistor transistor bc 337 BC 170 transistor capacite 335
Text: NPN ÇILICON TRANSISTOR TRANSISTOR NPN S ILIC IU M Switching and amplifier Available on A and B groups 64 V V CEO Commutation et amplification Utifisabfe pour les groupes A et B 200 mA 'c m i 125-260 A h21e 2 mA-5 V 1240-500 B Case TO-18 • See outline drawing ÇB-6 on last pages
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transistor KSA
Abstract: AF109R
Text: ESC D • flEBShOS 0ÛÛ4G53 0 « S I E G A F 109 R PNP Germanium RF Transistor SIEMENS AKT IE Nû ES EL LSC H AF 04053 D - T - 3 /'0 ~ 7 for A G C input stages up to 260 MHz AF 109 R is a germanium PNP RF mesa transistor in TO 72 case 18 A 4 DIN 41876 .
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Q60106-X109-R1
Q004QS?
AF109R
transistor KSA
AF109R
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J6 transistor
Abstract: 2SD1513 PA33 2sb1068 2sb10681
Text: NEC j Silicon Transistor 2SD1513 NPNxfc NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier #* /FEA TUR ES *fffi£IU/PACKAGE DIMENSIONS o \&W±jzWimMM]cn> ^ — 9 — Y 7 4 7\ v v 4 -rm k7 U nit: mm j K K7-f 7"%f, & t i m h FEX l& = > u 7 ^ S & f t l l c l l t r f o
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2SD1513
2SB10681
PWS10
J6 transistor
2SD1513
PA33
2sb1068
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