B2515
Abstract: b2500 ultra FAST DMOS FET Switches B2520 B2520K4
Text: Bay Linear Inspire the Linear Power B2520/B2515 N-CHANNEL DMOS FET SWITCH VIDEO TRANSISTOR Series Description Features The B2520 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The
|
Original
|
PDF
|
B2520/B2515
B2520
B2515
120dB
B2520
B2500
B2515
ultra FAST DMOS FET Switches
B2520K4
|
diode B25
Abstract: B25-28 B25 diode
Text: B25-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380" 4L STUD The B25-28 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz. .112x45° A C B E FEATURES: E ØC • PG = 10 dB Typical at 25 W/175 MHz • ∞ Load VSWR at Rated Conditions
|
Original
|
PDF
|
B25-28
B25-28
112x45°
ASI10803
diode B25
B25 diode
|
TDA4601
Abstract: BY295 BY258 TDA 4601 BY258/200 tda 2032 C2540 i c tda 4601 voltage TDA4601B 4601
Text: TDA4601 SWITCH-MODE POWER SUPPLY CONTROLLER . . . LOW START-UP CURRENT DIRECT CONTROL OF SWITCHING TRANSISTOR COLLECTOR CURRENT PROPORTIONAL TO BASE-CURRENT INPUT REVERSE-GOING LINEAR OVERLOAD CHARACTERISTIC CURVE SIP9 Plastic Package ORDER CODE : TDA4601
|
Original
|
PDF
|
TDA4601
TDA4601
TDA4601B
DIP18PW
PMDIP18W
BY295
BY258
TDA 4601
BY258/200
tda 2032
C2540
i c tda 4601 voltage
TDA4601B
4601
|
B81121 X2 mkt
Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r
|
Original
|
PDF
|
AN-TDA16888-0-010323
100kHz
V/18A;
-12V/1A;
V/100mA
Room14J1
Room1101
B81121 X2 mkt
B81121 X2 mkp
AN-TDA16888-0-010323
ELKO capacitors
MKT .22K 250V X2
EPCOS 230 00 O
ELKO CAPACITOR 63v 2,2
elko capacitor
TDA 16888
B81121 X2
|
log and antilog amplifier
Abstract: national linear brief 4 Vishay Ultronix Grand Junction CO Q81 sensistor Widlar anti-log 10E2 570X AN-30 C1995
Text: National Semiconductor Application Note 30 November 1969 One of the most predictable non-linear elements commonly available is the bipolar transistor The relationship between collector current and emitter base voltage is precisely logarithmic from currents below one picoamp to currents above
|
Original
|
PDF
|
LM108
log and antilog amplifier
national linear brief 4
Vishay Ultronix Grand Junction CO Q81
sensistor
Widlar
anti-log
10E2
570X
AN-30
C1995
|
Untitled
Abstract: No abstract text available
Text: APTES45DA120CT1G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage
|
Original
|
PDF
|
APTES45DA120CT1G
|
r21 diode
Abstract: No abstract text available
Text: APTES45SK120CT1G Buck chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • Power factor corrector • AC and DC motor control • Switched Mode Power Supplies Features • Emitter Switched Bipolar Transistor® ESBT®
|
Original
|
PDF
|
APTES45SK120CT1G
r21 diode
|
BLU45/12
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL b5E D • 711002b 00b273b b25 ■ PHIN BLU45/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features
|
OCR Scan
|
PDF
|
711002b
00b273b
BLU45/12
OT-119
G0bS743
BLU45/12
|
SILICON TRANSISTOR CORP
Abstract: No abstract text available
Text: ShE ]> SILICON TRANSISTOR CORP • B254022 □□00fl‘i2 20b « S T C SILICON TRANSISTOR CORPORATION ^ ^ Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 500 Volts 0.5 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS
|
OCR Scan
|
PDF
|
B254022
SNF20505
ST102
MIL-S-19500
SILICON TRANSISTOR CORP
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: • TRANSISTOR MODULE 7 ^ 1 5 4 3 000S1A5 H13 QCA100A/QBB100A40/60 UL;E76102 M Q C A 1 0 0 A and Q B B 1 OOA is a dual Darlin gton power transistor module with two high speed, high power Darlington transis tors. Each transistor has a reverse paral leled fast recovery diode.
|
OCR Scan
|
PDF
|
000S1A5
QCA100A/QBB100A40/60
E76102
400/600V
QCA100A/QBB100A
|
431202036640 choke
Abstract: 43120203664 431202036640 BLW83 BY206 philips carbon film resistor
Text: fe,RE » N AMER P H I L I P S / DI SC R ET E • bt.S3c131 □ □ S c1435 270 BLW83 I H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h .f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear
|
OCR Scan
|
PDF
|
Sc1435
BLW83
7z77767
BLW83
431202036640 choke
43120203664
431202036640
BY206
philips carbon film resistor
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors ^ 5 3 ^ 3 1 0D31815 W5 APX Product specification NPN 5 GHz wideband transistor ^ BFR91 N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial
|
OCR Scan
|
PDF
|
0D31815
BFR91
BFR91/02
ON4186)
|
TRANSISTOR SE 135
Abstract: No abstract text available
Text: m m tE X KS624540 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 HiQh-B&td Single Darlington Transistor Module 400 Amperes/600 Volts O U T L IN E DRAWING Description: The Powerex High-Beta Single Darlington Transistor Modules are
|
OCR Scan
|
PDF
|
KS624540
Amperes/600
72T4b21
G00flQ4b
TRANSISTOR SE 135
|
|
|
transistor L6
Abstract: BFQ43 CES10 BLW31 00B3-2
Text: bSE t> m ?iiD fisb □D t.an ? 43a • p h in BLW31 PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage of 13,5 V , Because o f the high gain and excellent power
|
OCR Scan
|
PDF
|
711002b
BLW31
BFQ43
transistor L6
CES10
BLW31
00B3-2
|
Untitled
Abstract: No abstract text available
Text: KSR2202 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO-92S • Switching circuit. Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Ri =10kU, R ^IO kfl) • Complement to KSR1202 ABSOLUTE MAXIMUM RATINGS (TA<B25‘C)
|
OCR Scan
|
PDF
|
KSR2202
KSR1202
O-92S
-100M
-10mA,
-10mA
|
b25-12
Abstract: 2N5591 B25-12 transistor "Frequency Multipliers" 4 watt VHF MT-72 20W power transistor
Text: GAE GREAT AMERICAN ELECTROINCS 2N5591/B25-12 Silicon NPN power VHF transistor 2N55591/B25-12 is designed for use 12.6 volt power amplifier, frequency multipliers and oscillator applications in industrial and commercial equipment. Especially suited for AM/FM land and mobile operation.
|
OCR Scan
|
PDF
|
2N5591/B25-12
2N55591/B25-12
MT-72
b25-12
2N5591
B25-12 transistor
"Frequency Multipliers"
4 watt VHF
20W power transistor
|
BUH1215T
Abstract: No abstract text available
Text: rz 7 ^7# SCS-THOMSON [*^ iyiOT®ioos BUH1215T CRT HORIZONTAL DEFLECTION HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR ADVANCE DATA . • ■ ■ HIGH BREAKDOWN VOLTAGE CAPABILITY LOW THERMAL RESISTANCE LOW SATURATION VOLTAGE HIGH SWITCHING SPEED APPLICATIONS:
|
OCR Scan
|
PDF
|
BUH1215T
DSB521
BUH1215T
|
BFG92AW
Abstract: transistor marking P8
Text: Product specification Philips Semiconductors BFG92AW BFG92AW/X; BFG92AW/XR NPN 6 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW P8 • Gold metallization ensures excellent reliability. BFG92AW/X P9 BFG92AW/XR
|
OCR Scan
|
PDF
|
BFG92AW
BFG92AW/X;
BFG92AW/XR
OT343
OT343R
BFG92AW/X
BFG92AW/XR
BFG92AW
BFG92AW/X
transistor marking P8
|
GL8901
Abstract: 4702 frequency to voltage converter BY258
Text: GL8901/GL8901S SWITCH-MODE POWER SUPPLY CONTROLLER Desicription The integrated circuit GL8901/S has been designed for driving, controlling, and protecting the switching transistor in switch mode power supply as well as for protecting the overall power supply unit.
|
OCR Scan
|
PDF
|
GL8901/GL8901S
GL8901/S
220pF
10kQ-¿
mF/25V
mF/16V
10kQ/3W
BU508
61-1C
270pF
GL8901
4702 frequency to voltage converter
BY258
|
B 773 transistor
Abstract: No abstract text available
Text: bbSBSSl 00E4774 'lib « A P X Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A N APIER PHILIPS/DISCRETE FEATURES b7E D PINNING PIN • High power gain DESCRIPTION • Good thermal stability 1 emitter • Gold metallization ensures
|
OCR Scan
|
PDF
|
00E4774
BFG16A
OT223
B 773 transistor
|
transistor 5bw
Abstract: TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave
Text: 9. Summarized Characteristics Table 4. Bipolar Transistor« Bipolar Transistors, Field Effect Transistors and Diodes Absolute M aximum Ratings Te*25uC Type No. Structure PNP Epitaxial Package N E C M INI M O L O Regular' Electrical Characteristics Ta«25°C>
|
OCR Scan
|
PDF
|
2SK67
2SK160
transistor 5bw
TRANSISTOR 5DW
5dw transistor
3bw transistor
2SC1009
transistor 3bw
1bw npn
NPN2SC2351
nec m
nec microwave
|
3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
|
OCR Scan
|
PDF
|
FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
|
S790T
Abstract: transistor k 3728 TRANSISTOR BC 298 sot-143 rf amplifier s790 transistor k 790
Text: c TELEFUNKEN ELECTRONIC filC D • D 0 DSM 3 S 5 ■ ALGG S 790 T TKLitFtLDKlKtitNl electronic Creative Technologies _ r - * M j Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier
|
OCR Scan
|
PDF
|
569-GS
S790T
transistor k 3728
TRANSISTOR BC 298
sot-143 rf amplifier
s790
transistor k 790
|
