tp5aw
Abstract: No abstract text available
Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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TP2510
125pF
TP2510
O-243AA
OT-89)
O-243,
DSFP-TP2510
B122707
tp5aw
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Untitled
Abstract: No abstract text available
Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2520
125pF
200pF
TP2520
O-243AA
OT-89)
O-243,
B122707
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Untitled
Abstract: No abstract text available
Text: Supertex inc. DN1509 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description This low threshold, depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well
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DN1509
DSFP-DN1509
B122013
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Untitled
Abstract: No abstract text available
Text: TP5322 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex TP5322 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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TP5322
110pF
O-236,
TP5322
O-243AA
OT-89)
O-243,
DSFP-TP5322
B122707
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TP2520N8-G
Abstract: No abstract text available
Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2520
125pF
200pF
TP2520
O-243AA
OT-89)
O-243,
B122707
TP2520N8-G
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2206N2
Abstract: No abstract text available
Text: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP2206
DSFP-VP2206
B122608
2206N2
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Untitled
Abstract: No abstract text available
Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2522
125pF
200pF
TP2522
O-243AA
OT-89)
O-243,
DSFP-TP2522
B122707
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Untitled
Abstract: No abstract text available
Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN2524
125pF
TN2524
O-243AA
OT-89)
O-243,
DSFP-TN2524
B122707
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NEC E170632
Abstract: e170632 B511 transistor MRF03-6P-1 201PW021 D311 transistor transistor B512 NL128102AC31-02A A3121 8 pin D311 equivalent
Text: DATA SHEET TFT COLOR LCD MODULE NL128102AC31-02A Diagonal Size 51.0 cm 20.1 Type , 1280 x 1024 Pixels, 16,777,216 Color, TMDS Interface/CRT Monitor Compatible Interface, Ultra-Wide Viewing Angle NL128102AC31-02A module is composed of the amorphous silicon thin film transistor liquid crystal
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NL128102AC31-02A
NL128102AC31-02A
DE0203
NEC E170632
e170632
B511 transistor
MRF03-6P-1
201PW021
D311 transistor
transistor B512
A3121 8 pin
D311 equivalent
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Untitled
Abstract: No abstract text available
Text: TC2320 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description The Supertex TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode normallyoff transistor utilizes an advanced vertical DMOS structure
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TC2320
TC2320
DSFP-TC2320
B122208
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c2320
Abstract: TRANSISTOR c2320 TC2320TG p channel mosfet 100v ultrasound transducer circuit driver 125OC TC2320 TC2320TG-G c2320 transistor
Text: TC2320 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode normallyoff transistor utilizes an advanced vertical DMOS structure
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TC2320
TC2320
DSFP-TC2320
B122208
c2320
TRANSISTOR c2320
TC2320TG
p channel mosfet 100v
ultrasound transducer circuit driver
125OC
TC2320TG-G
c2320 transistor
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B12-28
Abstract: 385 b12 ASI10801
Text: B12-28 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380" 4L STUD DESCRIPTION: .112x45° The B12-28 is Designed for Class C Power Amplifier Applications up to 250 MHz. A C B E FEATURES: ØC • PG = 13 dB Typical at 12 W/175 MHz • ∞ Load VSWR at Rated Conditions
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B12-28
112x45°
B12-28
ASI10801
385 b12
ASI10801
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DPDT 6 terminal window switch
Abstract: H3CR-A8E TIMER H3CR-A8 11 pin relay Socket DPDT 6 terminal switch internal diagram H3CR-A H3CR-A8 SPDT 5 pins Relay SPDT relay Y92F 30
Text: Solid-state Multi-functional Timer Timers H3CR-A DIN 48 x 48-mm State-of-the-art Multifunctional Timer • A wider power supply range reduces the number of timer models kept in stock. • A wide range of applications through six or four operating modes. • Reduced power consumption.
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48-mm
11-pin
B-130
DPDT 6 terminal window switch
H3CR-A8E
TIMER H3CR-A8
11 pin relay Socket
DPDT 6 terminal switch internal diagram
H3CR-A
H3CR-A8
SPDT 5 pins Relay
SPDT relay
Y92F 30
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Telemecanique SR1 B201FU
Abstract: Telemecanique SR1 B101FU Zelio zelio SR1 Telemecanique sr1 user guide Telemecanique SR1 A201FU software telemecanique sr1 SR1 A201FU SR1 A201BD SR1 B201BD
Text: Plaquette Zelio v2.flashage EN 20/09/02 15:01 Page 4 Telemecanique Zelio Logic Logically advanced!. Building a New Electric World 15:00 Page 1 Zelio Logic. a host of functions, for a multitude of applications Zelio Logic is designed for use in small automation systems:
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LECED102061EN
Telemecanique SR1 B201FU
Telemecanique SR1 B101FU
Zelio
zelio SR1
Telemecanique sr1 user guide
Telemecanique SR1 A201FU
software telemecanique sr1
SR1 A201FU
SR1 A201BD
SR1 B201BD
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IR2125
Abstract: 017D MP150 IGBT Designers Manual
Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.017D IR2125 CURRENT LIMITING SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune
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IR2125
IR2125
B-121
B-122
017D
MP150
IGBT Designers Manual
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CBL-202
Abstract: No abstract text available
Text: CJ1 Ordering Guide CPU Selection J CPUs Part number CPU Model Description/Specifications No. of I/O points Max. no. of modules, Max. no. of expansions See Note 2. Program capacity Data memory capacity (See Note 1.) LD instruction processing speed Standards
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R301-E3-01
CBL-202
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Zelio SR3
Abstract: user manual sr2 b201bd SR2 B201BD SR2 A201BD SR2 cbl01 sr2 b201bd operation manual sr3 b101fu SR3 B261BD B201BD zelio SR3 B101BD
Text: Zelio Logic smart relays Presentation Compact and modular smart relays Presentation 109446 Zelio Logic smart relays are designed for use in small automated systems. They are used in both industrial and commercial applications. b For industry: v automation of small finishing, production, assembly or packaging machines.
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p201FU,
B121B
p101FU
14102-EN
fm/17
Zelio SR3
user manual sr2 b201bd
SR2 B201BD
SR2 A201BD
SR2 cbl01
sr2 b201bd operation manual
sr3 b101fu
SR3 B261BD
B201BD
zelio SR3 B101BD
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Mitsubishi a1shcpu
Abstract: A1SY10EU A2SH A1SHcpu A1S61PN A1SJ71AT21B A6BAT Melsec a1shCPU MITSUBISHI INTELLIGENT POWER MODULES A1S61PN A2ASCPU-S30
Text: MITSUBISHI ELECTRIC 130 Programmable Logic Controllers 1 MELSEC AnS, QnAS 130 130 X 6,5 93,6 130 1 2 3 4 5 6 7 STOP POWER RUN LCLR ERROR RESET RUN RESET MITSUBISHI MITSUBISHI 1 OUTPUT INPUT 3A AC 100/110/120V DC5V AC 200/220/240V 69,5 2 3 4 5 6 7 8 9 A B C
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100/110/120V
200/220/240V
1SY80
1SY81
1SX81
59085-G,
U-254070
D-40880
Mitsubishi a1shcpu
A1SY10EU
A2SH
A1SHcpu
A1S61PN
A1SJ71AT21B
A6BAT
Melsec a1shCPU
MITSUBISHI INTELLIGENT POWER MODULES A1S61PN
A2ASCPU-S30
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d313 TRANSISTOR equivalent
Abstract: 207a smd ic smd diode 106E mil-std-202F 101D 6822 TRANSISTOR equivalent transistor d323 MIL-STD-202F-201A transistor D313 smd diode 101a D313 VOLTAGE REGULATOR
Text: RELIABILITY TESTING OF SEMICONDUCTOR DEVICES V. RELIABILITY TESTING OF SEMICONDUCTOR DEVICES 1. WHAT IS RELIABILITY TESTING? 2. RELIABILITY TEST METHODS 3. ACCELERATED LIFE TEST 4. ANALYSIS OF TEST RESULTS 4.1 HOW TO USE WEIBULL PROBABILITY PAPER 3. 4.1.1 APPLICATION OF WEIBULL PROBABILITY PAPER
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R69-20
d313 TRANSISTOR equivalent
207a smd ic
smd diode 106E
mil-std-202F 101D
6822 TRANSISTOR equivalent
transistor d323
MIL-STD-202F-201A
transistor D313
smd diode 101a
D313 VOLTAGE REGULATOR
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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Transistor B123
Abstract: No abstract text available
Text: 2DI3OOA-O5O 300a • & ±*<r7 —:£ ì> a .—JU : Outline Drawings POWER TRANSISTOR MODULE : Features • ±n$L High Current • hFE *'"¡§ 1 ' High DC Current,Gain f0'2 -•■ aii Re' Insulated Type \£ / Ä i C2EI Applications • JzWJjZ.'f High Power Sw itching
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E82988
Transistor B123
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H11S
Abstract: lc-300A
Text: 2 DI300A-050 300A POWER TRANSISTOR MODULE • ¡tfJ i: : Features • ^^iyfE High Current • h F E A ^ i' • High DC Current.Gain Insulated Type ■ f f l i i : A pplications ih W tJ Z x i v T 's ? High Power Sw itching • U ninterruptible Power Supply
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DI300A-050
l95t/R89
H11S
lc-300A
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Transistor B123
Abstract: H11S r6e2 T151 T760 b123 04 DA092
Text: 2 DI300A-050 300A POWER TRANSISTOR MODULE • ¡tfJ i: : Features • ^^iyfE High Current • h F E A ^ i' • High DC Current.Gain Insulated Type ■ f f l i i : A pplications ih W tJ Z x i v T 's ? High Power Sw itching • U ninterruptible Power Supply
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II15IJÃ
I95t/R89)
Shl50
Transistor B123
H11S
r6e2
T151
T760
b123 04
DA092
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bd7995
Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND
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8366IT
STR910A
B26000
B26050
B2G010
B26010
B2701D
9SM102/V4T7
bd7995
P8243
178M15
transistor b492
TRANSISTOR BJ 131-6
P8035
sk 7443
1334 diode
LM1456
LM 8361
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