DIODE GP 704
Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD12MVP1
175MHz,
RD12MVP1
175MHz
175MHz)
DIODE GP 704
transistor mosfet 536
VGS-75
0452 mosfet
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2N2219A
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N2219A Features • • • • SWITCHING TRANSISTOR Collector - Base Voltage 75 V Collector - Current 800 mA Medium Current, Bipolar Transistor
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2N2219A
2N2219A
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583 transistor
Abstract: No abstract text available
Text: BCR 583 PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2 =10kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 583 XMs Pin Configuration 1=B 2=E Package
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VPS05161
EHA07183
OT-23
Oct-19-1999
583 transistor
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Untitled
Abstract: No abstract text available
Text: BCR 533 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2 =10kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 533 XCs Pin Configuration 1=B 2=E Package
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VPS05161
EHA07184
OT-23
Oct-19-1999
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Untitled
Abstract: No abstract text available
Text: BCR 505 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=10kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 505 XWs Pin Configuration 1=B 2=E Package
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VPS05161
EHA07184
OT-23
Oct-19-1999
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Untitled
Abstract: No abstract text available
Text: BCR 573 PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=10kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 573 XHs Pin Configuration 1=B 2=E Package
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VPS05161
EHA07183
OT-23
Oct-19-1999
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2n2222a equivalent
Abstract: 2N2222A JANTXV
Text: MCC 2N2222A omponents 21201 Itasca Street Chatsworth !"# $ % !"# NPN BIPOLAR TRANSISTOR SWITCHING TRANSISTOR NPN SILICON FEATURES: n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
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2N2222A
MIL-PRF-19500/255
2N2222A_
2n2222a equivalent
2N2222A JANTXV
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BUK545
Abstract: BUK545-60A BUK545-60B
Text: PHILIPS INTERNATIONAL bSE D B 7110flSb O O b m ^ b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.
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7110ASfc.
BUK545-60A/B
OT186
BUK545
10CHXh
ID/100
BUK545-60A
BUK545-60B
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Untitled
Abstract: No abstract text available
Text: _ _ _ II BF967 N AMER PHILIPS/DISCRETE ObE D • b b S a ^ l ODlS3Ea b ■ ~ —— - — - ■^•-— — = ~ Zz :v ^ =— — • - —=— r-3!-/^ SILICON PLANAR TRANSISTOR V P-N-P transistor in a plastic T-package, primarily intended for application as gain controlled preamplifier
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BF967
b53T31
0Q1533E
T-31-
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Untitled
Abstract: No abstract text available
Text: • bb53T31 DD34bM3 fiflT HIAPX N AUER PHILIPS/DISCRETE BF550 b?E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.
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bb53T31
DD34bM3
BF550
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BFW16
Abstract: TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor
Text: B F W 1 6A NPN Silicon planar RF transistor BFW 16 A is an epitaxial NPN silicon planar RF transistor in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. This transistor is designed for universal application up into the GHz range, e.g. for driver and output stages of
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BFW16
Q62702-F319
TRANSISTOR BFW 16
bfw 10 transistor
BFW16A
application of transistor BFW 10
TRANSISTOR BFW 11
Q62702-F319
transistor bfw16a
t 326 Transistor
bfw 16 transistor
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iskaa
Abstract: chip die npn transistor
Text: 4bE » • b3b72S4 ÜQTSRSS Q ■ H 0 T b T - 3 > ^ \ MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR ■ h h h b h b h h b h TECHNICAL DATA 2C3501HV Chip NPN Silicon. Small-Signal Transistor A IM »ff# ff# . .designed for general-purpose switching and amplifier applications.
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b3b72S4
2C3501HV
iskaa
chip die npn transistor
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H1P transistor
Abstract: transistor BUX 48 BUX43 BUX 43
Text: *B U X 4 3 NPN SILICON TRANSISTOR. TRIPLE DIFFUSED MESA TR A N S IS TO R S IL IC IU M NP N , M ESA T R IP L E D IF F U S E îfîPreferred device D isp o sitif recommandé High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant
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BUX43
CB-19
H1P transistor
transistor BUX 48
BUX43
BUX 43
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TRANSISTOR K 314
Abstract: antenne
Text: BFS 55 Nicht für N e u e n tw ick lu n g IMPIM -Transistor fü r H F -A n w e n d u n g e n bis in den G H z -B e re ic h B F S 55 ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n
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Q62702-F272
TRANSISTOR K 314
antenne
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BFG33
Abstract: zo 107 NA P 611 RJ50 UCD123 npn transistor dc 558 RF NPN POWER TRANSISTOR C 10-12 GHZ
Text: Philips Semiconductors ^ 7110 82 b D0 b 8 7 75 611 M P H IN NPN 12 GHz wideband transistor FEATURES Product specification BFG33; BFG33/X PINNING PIN • High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION
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711082b
D0b8775
BFG33;
BFG33/X
BFG33
OT143
BFG33/X;
MSB014
OT143.
zo 107 NA P 611
RJ50
UCD123
npn transistor dc 558
RF NPN POWER TRANSISTOR C 10-12 GHZ
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ir 319
Abstract: BFS55A ir319
Text: IMP N -S iliz iu m -B re itb a n d tra n s isto r B F S 55A B F S 5 5 A ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 8 7 6 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n w e n dungen bis in den GH z-Bereich geeignet. z.B. in Antennenverstärkern sow ie für Radar-ZFVerstärker und Satellitentechnik.
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BFS55A
Q62702-F454
ir 319
ir319
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562 sot23
Abstract: Transistor Bo 47
Text: SIEMENS BCR 562 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7kQ, R2=4.7k£i ÍZ L Type Marking Ordering Code Pin Configuration B C R 562 XUs 1=B Q62702-C2356 Package 2=E 3=C
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Q62702-C2356
OT-23
562 sot23
Transistor Bo 47
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702 Z TRANSISTOR
Abstract: BF 981 transistor Bf 981 Q62702-F1250 BF 145 transistor marking LG transistor Bf 979
Text: SIEMENS BF 775A NPN Silicon R F Transistor • E sp ecially suitable for amplifiers and T V-sat tuners E S P : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration B F 775A LG s Q62.702-F1250 1 =B
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702-F1250
IS21e
1S21/S
702 Z TRANSISTOR
BF 981
transistor Bf 981
Q62702-F1250
BF 145 transistor
marking LG
transistor Bf 979
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TRANSISTOR J 5804 NPN
Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.
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2SC4885
SC-70
TRANSISTOR J 5804 NPN
nec 2501 LD 229
transistor NEC D 986
NEC 2501 MF 216
nec 2501 LD 325
tfr 586
nec 2501 Le 629
CD 1691 CB
MC 151 transistor
567/triac ZO 410 MF
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NE24300
Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
Text: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator
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b4E7414
00D2371
NE243
NE24300
NE243187
NE243188
NE243287
NE243288
transistor 81 110 w 63
transistor 81 110 w 85
NE243499
NE24318
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TRANSISTOR GB 558
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •
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2SC5013
2SC5013-T1
2SC5013-T2
TRANSISTOR GB 558
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Untitled
Abstract: No abstract text available
Text: Back to B ip o lar P o w e r T ransistors NSG2657 NSCÎ2658 NPN POWER TRANSISTOR HIGH VOLTAGE FAST SWITCHING LOW SATURATION VOLTAGE HIGH GAIN MAXIMUM RATINGS SYMBOL VALUE UNITS RATINGS Collector-Emitter Voltage 325 Vdc VcEO 500 Vdc Collector-Base Voltage V çbo
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NSG2657
300ys,
O-254Z
2x150
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bup4
Abstract: No abstract text available
Text: MAE D 6133167 DDDOmfl DD3 SEM EFA BL HIGH POWER DIE w - ^ ~ DIFFUSIO N SEMELAB DIFFUSED B Y SE M E F A B ISMLB LTD 1 G135 chip family The G 1 3 5 chip family is an NPN bipolar multiepitaxial planar transistor intended for applications requiring fast switching, low saturation, high power
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EmitMJ14000
BUP49
BUP52
BUV61
BUS51
BUR51
BUP54
BUT92A
BUP51
G935A
bup4
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Untitled
Abstract: No abstract text available
Text: 7^237 D D 4 b G 1 2 325 • S 6 T H _ SGSTHOMSON STK2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N50 ■ . . . . V dss RDS on Id 500 V < 6 Q 2 A TYPICAL R ds (or) = 4.6 £2 AVALANCHE RUGGED TECHNOLO GY 100% AVALANCHE TESTED
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STK2N50
GC21B40
GC21620
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