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    TRANSISTOR B 325 Search Results

    TRANSISTOR B 325 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 325 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) (b) 7.0+/-0.2 0.2+/-0.05


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    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz)

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK


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    PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz)

    MARK "326" FET

    Abstract: transistor 3669
    Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor (b) (b) 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK


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    PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) 05Electric Oct2011 MARK "326" FET transistor 3669

    DIODE GP 704

    Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


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    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) DIODE GP 704 transistor mosfet 536 VGS-75 0452 mosfet

    transistor D 1666

    Abstract: transistor 801 diagrams
    Text: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) 7.0+/-0.2 0.2+/-0.05


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    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) Oct2011 transistor D 1666 transistor 801 diagrams

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BCX70 Preliminary NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR  ORDERING INFORMATION Ordering Number Package BCX70G-AE3-R Note: Pin Assignment: E: Emitter B: Base C: Collector SOT-23  Pin Assignment 1 2 3


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    PDF BCX70 BCX70G-AE3-R OT-23 QW-R206-080

    MCT8 opto

    Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
    Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR


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    PDF MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35

    BUK545

    Abstract: BUK545-60A BUK545-60B
    Text: PHILIPS INTERNATIONAL bSE D B 7110flSb O O b m ^ b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.


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    PDF 7110ASfc. BUK545-60A/B OT186 BUK545 10CHXh ID/100 BUK545-60A BUK545-60B

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: _ _ _ II BF967 N AMER PHILIPS/DISCRETE ObE D • b b S a ^ l ODlS3Ea b ■ ~ —— - — - ■^•-— — = ~ Zz :v ^ =— — • - —=— r-3!-/^ SILICON PLANAR TRANSISTOR V P-N-P transistor in a plastic T-package, primarily intended for application as gain controlled preamplifier


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    PDF BF967 b53T31 0Q1533E T-31-

    Untitled

    Abstract: No abstract text available
    Text: • bb53T31 DD34bM3 fiflT HIAPX N AUER PHILIPS/DISCRETE BF550 b?E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.


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    PDF bb53T31 DD34bM3 BF550

    BUK454-600B

    Abstract: T0220AB t 326 Transistor
    Text: N AMER P H I L I P S / D I S C R E T E b^E D • □□3Dfc>3D TM2 ■ I APX b ¡35 3^31 Product Specification Philips Semiconductors BUK454-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.


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    PDF 0G30b3G BUK454-600B T0220AB BUK454-600B T0220AB t 326 Transistor

    transistor B43

    Abstract: BUK454-600B T0220AB
    Text: bSE D PHILIPS INTERNATIONAL B TllOaSb OObHObb 67D • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF 711062b 0Db40fc BUK454-600B T0220AB transistor B43 BUK454-600B

    BF550

    Abstract: transistor marking code 325 0024-B
    Text: • bbSBTBi □ □ S 4 b in aaT m a p x N AUER PHILIPS/DISCRETE BF550 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.


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    PDF 24LMC] BF550 OT-23 BF550 transistor marking code 325 0024-B

    100-P

    Abstract: BUK454-600B T0220AB
    Text: bSE D PHILIPS INTERNATIONAL B TllDöSb OObHObb Ö7D « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF BUK454-600B T0220AB 100-P

    BFW16

    Abstract: TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor
    Text: B F W 1 6A NPN Silicon planar RF transistor BFW 16 A is an epitaxial NPN silicon planar RF transistor in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. This transistor is designed for universal application up into the GHz range, e.g. for driver and output stages of


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    PDF BFW16 Q62702-F319 TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor

    iskaa

    Abstract: chip die npn transistor
    Text: 4bE » • b3b72S4 ÜQTSRSS Q ■ H 0 T b T - 3 > ^ \ MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR ■ h h h b h b h h b h TECHNICAL DATA 2C3501HV Chip NPN Silicon. Small-Signal Transistor A IM »ff# ff# . .designed for general-purpose switching and amplifier applications.


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    PDF b3b72S4 2C3501HV iskaa chip die npn transistor

    H1P transistor

    Abstract: transistor BUX 48 BUX43 BUX 43
    Text: *B U X 4 3 NPN SILICON TRANSISTOR. TRIPLE DIFFUSED MESA TR A N S IS TO R S IL IC IU M NP N , M ESA T R IP L E D IF F U S E îfîPreferred device D isp o sitif recommandé High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant


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    PDF BUX43 CB-19 H1P transistor transistor BUX 48 BUX43 BUX 43

    TRANSISTOR K 314

    Abstract: antenne
    Text: BFS 55 Nicht für N e u e n tw ick lu n g IMPIM -Transistor fü r H F -A n w e n d u n g e n bis in den G H z -B e re ic h B F S 55 ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n ­


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    PDF Q62702-F272 TRANSISTOR K 314 antenne

    2SD1630

    Abstract: No abstract text available
    Text: SEC i l > h> y< '7— b =7 7 .9 Darlington Power Transistor 2SD1630 9 N P N l fc: JV W ii/ i; □ > h = 7 > i> i&mfcmtimm, 7 .9 { & & & * * ? * • > * & U L liiJB NPN ^ ',icon EP'taxial Darlington Transistor Audio Frequency Power Amplifier Low Speed Switching


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    PDF 2SD1630 2sd1630ii, 2SD1630

    BFG33

    Abstract: zo 107 NA P 611 RJ50 UCD123 npn transistor dc 558 RF NPN POWER TRANSISTOR C 10-12 GHZ
    Text: Philips Semiconductors ^ 7110 82 b D0 b 8 7 75 611 M P H IN NPN 12 GHz wideband transistor FEATURES Product specification BFG33; BFG33/X PINNING PIN • High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION


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    PDF 711082b D0b8775 BFG33; BFG33/X BFG33 OT143 BFG33/X; MSB014 OT143. zo 107 NA P 611 RJ50 UCD123 npn transistor dc 558 RF NPN POWER TRANSISTOR C 10-12 GHZ

    2SA1462

    Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
    Text: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,


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    PDF 2SA1462 o2SC3735 2SA1462 JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor

    ir 319

    Abstract: BFS55A ir319
    Text: IMP N -S iliz iu m -B re itb a n d tra n s isto r B F S 55A B F S 5 5 A ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 8 7 6 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n w e n dungen bis in den GH z-Bereich geeignet. z.B. in Antennenverstärkern sow ie für Radar-ZFVerstärker und Satellitentechnik.


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    PDF BFS55A Q62702-F454 ir 319 ir319

    562 sot23

    Abstract: Transistor Bo 47
    Text: SIEMENS BCR 562 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7kQ, R2=4.7k£i ÍZ L Type Marking Ordering Code Pin Configuration B C R 562 XUs 1=B Q62702-C2356 Package 2=E 3=C


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    PDF Q62702-C2356 OT-23 562 sot23 Transistor Bo 47