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    TRANSISTOR B 325 Search Results

    TRANSISTOR B 325 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 325 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE GP 704

    Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


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    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) DIODE GP 704 transistor mosfet 536 VGS-75 0452 mosfet

    2N2219A

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N2219A Features • • • • SWITCHING TRANSISTOR Collector - Base Voltage 75 V Collector - Current 800 mA Medium Current, Bipolar Transistor


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    PDF 2N2219A 2N2219A

    583 transistor

    Abstract: No abstract text available
    Text: BCR 583 PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2 =10kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 583 XMs Pin Configuration 1=B 2=E Package


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    PDF VPS05161 EHA07183 OT-23 Oct-19-1999 583 transistor

    Untitled

    Abstract: No abstract text available
    Text: BCR 533 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2 =10kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 533 XCs Pin Configuration 1=B 2=E Package


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    PDF VPS05161 EHA07184 OT-23 Oct-19-1999

    Untitled

    Abstract: No abstract text available
    Text: BCR 505 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=10kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 505 XWs Pin Configuration 1=B 2=E Package


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    PDF VPS05161 EHA07184 OT-23 Oct-19-1999

    Untitled

    Abstract: No abstract text available
    Text: BCR 573 PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=10kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 573 XHs Pin Configuration 1=B 2=E Package


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    PDF VPS05161 EHA07183 OT-23 Oct-19-1999

    2n2222a equivalent

    Abstract: 2N2222A JANTXV
    Text: MCC 2N2222A   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# NPN BIPOLAR TRANSISTOR SWITCHING TRANSISTOR NPN SILICON FEATURES: n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS


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    PDF 2N2222A MIL-PRF-19500/255 2N2222A_ 2n2222a equivalent 2N2222A JANTXV

    BUK545

    Abstract: BUK545-60A BUK545-60B
    Text: PHILIPS INTERNATIONAL bSE D B 7110flSb O O b m ^ b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.


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    PDF 7110ASfc. BUK545-60A/B OT186 BUK545 10CHXh ID/100 BUK545-60A BUK545-60B

    Untitled

    Abstract: No abstract text available
    Text: _ _ _ II BF967 N AMER PHILIPS/DISCRETE ObE D • b b S a ^ l ODlS3Ea b ■ ~ —— - — - ■^•-— — = ~ Zz :v ^ =— — • - —=— r-3!-/^ SILICON PLANAR TRANSISTOR V P-N-P transistor in a plastic T-package, primarily intended for application as gain controlled preamplifier


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    PDF BF967 b53T31 0Q1533E T-31-

    Untitled

    Abstract: No abstract text available
    Text: • bb53T31 DD34bM3 fiflT HIAPX N AUER PHILIPS/DISCRETE BF550 b?E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.


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    PDF bb53T31 DD34bM3 BF550

    BFW16

    Abstract: TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor
    Text: B F W 1 6A NPN Silicon planar RF transistor BFW 16 A is an epitaxial NPN silicon planar RF transistor in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. This transistor is designed for universal application up into the GHz range, e.g. for driver and output stages of


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    PDF BFW16 Q62702-F319 TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor

    iskaa

    Abstract: chip die npn transistor
    Text: 4bE » • b3b72S4 ÜQTSRSS Q ■ H 0 T b T - 3 > ^ \ MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR ■ h h h b h b h h b h TECHNICAL DATA 2C3501HV Chip NPN Silicon. Small-Signal Transistor A IM »ff# ff# . .designed for general-purpose switching and amplifier applications.


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    PDF b3b72S4 2C3501HV iskaa chip die npn transistor

    H1P transistor

    Abstract: transistor BUX 48 BUX43 BUX 43
    Text: *B U X 4 3 NPN SILICON TRANSISTOR. TRIPLE DIFFUSED MESA TR A N S IS TO R S IL IC IU M NP N , M ESA T R IP L E D IF F U S E îfîPreferred device D isp o sitif recommandé High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant


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    PDF BUX43 CB-19 H1P transistor transistor BUX 48 BUX43 BUX 43

    TRANSISTOR K 314

    Abstract: antenne
    Text: BFS 55 Nicht für N e u e n tw ick lu n g IMPIM -Transistor fü r H F -A n w e n d u n g e n bis in den G H z -B e re ic h B F S 55 ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n ­


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    PDF Q62702-F272 TRANSISTOR K 314 antenne

    BFG33

    Abstract: zo 107 NA P 611 RJ50 UCD123 npn transistor dc 558 RF NPN POWER TRANSISTOR C 10-12 GHZ
    Text: Philips Semiconductors ^ 7110 82 b D0 b 8 7 75 611 M P H IN NPN 12 GHz wideband transistor FEATURES Product specification BFG33; BFG33/X PINNING PIN • High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION


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    PDF 711082b D0b8775 BFG33; BFG33/X BFG33 OT143 BFG33/X; MSB014 OT143. zo 107 NA P 611 RJ50 UCD123 npn transistor dc 558 RF NPN POWER TRANSISTOR C 10-12 GHZ

    ir 319

    Abstract: BFS55A ir319
    Text: IMP N -S iliz iu m -B re itb a n d tra n s isto r B F S 55A B F S 5 5 A ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 8 7 6 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n w e n dungen bis in den GH z-Bereich geeignet. z.B. in Antennenverstärkern sow ie für Radar-ZFVerstärker und Satellitentechnik.


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    PDF BFS55A Q62702-F454 ir 319 ir319

    562 sot23

    Abstract: Transistor Bo 47
    Text: SIEMENS BCR 562 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7kQ, R2=4.7k£i ÍZ L Type Marking Ordering Code Pin Configuration B C R 562 XUs 1=B Q62702-C2356 Package 2=E 3=C


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    PDF Q62702-C2356 OT-23 562 sot23 Transistor Bo 47

    702 Z TRANSISTOR

    Abstract: BF 981 transistor Bf 981 Q62702-F1250 BF 145 transistor marking LG transistor Bf 979
    Text: SIEMENS BF 775A NPN Silicon R F Transistor • E sp ecially suitable for amplifiers and T V-sat tuners E S P : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration B F 775A LG s Q62.702-F1250 1 =B


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    PDF 702-F1250 IS21e 1S21/S 702 Z TRANSISTOR BF 981 transistor Bf 981 Q62702-F1250 BF 145 transistor marking LG transistor Bf 979

    TRANSISTOR J 5804 NPN

    Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.


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    PDF 2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF

    NE24300

    Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
    Text: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator


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    PDF b4E7414 00D2371 NE243 NE24300 NE243187 NE243188 NE243287 NE243288 transistor 81 110 w 63 transistor 81 110 w 85 NE243499 NE24318

    TRANSISTOR GB 558

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


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    PDF 2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558

    Untitled

    Abstract: No abstract text available
    Text: Back to B ip o lar P o w e r T ransistors NSG2657 NSCÎ2658 NPN POWER TRANSISTOR HIGH VOLTAGE FAST SWITCHING LOW SATURATION VOLTAGE HIGH GAIN MAXIMUM RATINGS SYMBOL VALUE UNITS RATINGS Collector-Emitter Voltage 325 Vdc VcEO 500 Vdc Collector-Base Voltage V çbo


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    PDF NSG2657 300ys, O-254Z 2x150

    bup4

    Abstract: No abstract text available
    Text: MAE D 6133167 DDDOmfl DD3 SEM EFA BL HIGH POWER DIE w - ^ ~ DIFFUSIO N SEMELAB DIFFUSED B Y SE M E F A B ISMLB LTD 1 G135 chip family The G 1 3 5 chip family is an NPN bipolar multiepitaxial planar transistor intended for applications requiring fast switching, low saturation, high power


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    PDF EmitMJ14000 BUP49 BUP52 BUV61 BUS51 BUR51 BUP54 BUT92A BUP51 G935A bup4

    Untitled

    Abstract: No abstract text available
    Text: 7^237 D D 4 b G 1 2 325 • S 6 T H _ SGSTHOMSON STK2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N50 ■ . . . . V dss RDS on Id 500 V < 6 Q 2 A TYPICAL R ds (or) = 4.6 £2 AVALANCHE RUGGED TECHNOLO GY 100% AVALANCHE TESTED


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    PDF STK2N50 GC21B40 GC21620