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    TRANSISTOR B 1184 Search Results

    TRANSISTOR B 1184 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 1184 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


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    PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    PCF7952

    Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
    Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


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    PDF VP22480-3 VP22480-5 VP22530-2 PCF7952 pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191

    PCF7931AS

    Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
    Text: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


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    PDF 87C528 X3A-KTY181/1 X3A-OH155 PCF7931AS PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps

    tda8362b

    Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
    Text: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


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    PDF 1N4003ID 1N4005G 1N4006G 30-Jun-02 30-Jun-01 30-Jun-01 31-Dec-01 tda8362b OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262

    Untitled

    Abstract: No abstract text available
    Text: ◆Synchronous Step-Down DC/DC Converter with Built-In LDO Regulator Plus Voltage Detector ◆Step-Down DC/DC Converter's Output Connected In Parallel with LDO Regulator ◆High Efficiency, Low Noise Regulated Output ◆Ultra Small Packages: MSOP-10, USP-10


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    PDF MSOP-10, USP-10 600mA, 200mA XC9509

    SCR based induction furnace circuit diagram

    Abstract: sprague 11z12 two way solenoid valve schematic diagram circuit schematic diagram induction heater SCR induction furnace circuit diagram triac applications circuit diagram CA3059 equivalent dc 220v motor speed control circuit with scr automatic change over switch circuit diagram three phase scr control induction heater circuit
    Text: Harris Semiconductor No. AN6182.1 Harris Intelligent Power April 1994 FEATURES AND APPLICATIONS OF INTEGRATED CIRCUIT ZERO-VOLTAGE SWITCHES CA3059 AND CA3079 Authors: A.C.N. Sheng, G.J. Granieri, J. Yellin, and T. McNulty CA3059 and CA3079 zero-voltage switches are monolithic


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    PDF AN6182 CA3059 CA3079) CA3079 400Hz. SCR based induction furnace circuit diagram sprague 11z12 two way solenoid valve schematic diagram circuit schematic diagram induction heater SCR induction furnace circuit diagram triac applications circuit diagram CA3059 equivalent dc 220v motor speed control circuit with scr automatic change over switch circuit diagram three phase scr control induction heater circuit

    11Z12

    Abstract: sprague 11z12 CA3059 CA3059 equivalent SCHEMATIC 5kw power supply 30A triac scr ntc three phase heater control schematic triac base four step touch dimmer three phase ntc triac heater control triac diac applications circuit diagram schematic diagram induction heater
    Text: Semiconductor No. AN6182.1 Harris Intelligent Power April 1994 FEATURES AND APPLICATIONS OF INTEGRATED CIRCUIT ZERO-VOLTAGE SWITCHES CA3059 AND CA3079 Authors: A.C.N. Sheng, G.J. Granieri, J. Yellin, and T. McNulty CA3059 and CA3079 zero-voltage switches are monolithic


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    PDF AN6182 CA3059 CA3079) CA3079 400Hz. 11Z12 sprague 11z12 CA3059 equivalent SCHEMATIC 5kw power supply 30A triac scr ntc three phase heater control schematic triac base four step touch dimmer three phase ntc triac heater control triac diac applications circuit diagram schematic diagram induction heater

    E2p 96 transistor

    Abstract: BFS17 BFS17A MSB003
    Text: Philips Sem iconductors iH 7 1 1 Q f l2 b 0 O b '"! 2 2 5 L7b I B PH I N Product specification NPN 3 GHz wideband transistor £ BFS17A TYP. MAX. PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.


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    PDF 711Dflgb BFS17A MSB003 E2p 96 transistor BFS17

    transistor B 1184

    Abstract: 2SD1762 b 1185
    Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) ^External dim ensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic / I b = 2A/0.2A) 2) Com plem ents the 2S B 1184/2S B 1243/2S B 1185. • S tru c tu re Epitaxial planar type


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    PDF 2SD1760/2SD1864/2SD1762 1184/2S 1243/2S 96-214-D57) 2SD1760 2SD1864 2SD1762 transistor B 1184 b 1185

    transistor B 1184

    Abstract: BFW30 transistor b 1185 philips BFW30
    Text: Product specification Philips Semiconductors NPN 2 GHz wideband transistor P H I L IP S I N T E R N A T I O N A L DESCRIPTION * 7 ^ 3 /"S SbE D • BFW30 '? 711Gfl2b O O M b O E b 172 « P H I N PINNING NPN transistor in a TO-72 metal envelope, with Insulated electrodes


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    PDF BFW30 7110flSb transistor B 1184 BFW30 transistor b 1185 philips BFW30

    cq 636 g transistor

    Abstract: No abstract text available
    Text: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.


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    PDF BFS17A cq 636 g transistor

    4687 transistor

    Abstract: transistor 4687 C 5074 transistor
    Text: A va ila b le as: VOLTAGE CONTROLLED OSCILLATOR TOM9328, 4 Pin TO-8 T4 TON9328, 4 Pin Surface Mount (SM3) B X09328, Connectorized Housing (H1) _ 800-1300 M H z Features • ■ ■ ■ Broad Tuning Range Low Noise Bipolar Transistor


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    PDF OM9328, ON9328, X09328, 4687 transistor transistor 4687 C 5074 transistor

    transistor KTA 949

    Abstract: KTC2229 2SC 2229 transistor KTN5013 2238B transistor B 1184 transistor HFE 400 1w to 92 TO92C
    Text: 2 DRIVER TRANSISTOR USE TYPE v CEO V * PC (mA) (mW) ELECTRICAL CHARACTERISTICS (Ta = 25C) T. Co ICBO (uA) «AX *E VCB (V) (mA) hFE VCE (sat) VCE (V) k: (mA) (V) *C (mA) (MHz) TYP (MIN) VCE k (V) (mA) -10 4.0 -10 I TO-92L fT MAX *B (mA) Cob. (pF) TYP (MAX)


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    PDF 949/KTP O-92L 2229/KTN 1015/KTP5514 1815/KTN O-126 O-220 transistor KTA 949 KTC2229 2SC 2229 transistor KTN5013 2238B transistor B 1184 transistor HFE 400 1w to 92 TO92C

    lt 5217

    Abstract: No abstract text available
    Text: Ordering number : EN*6183 Monolithic Digital IC LB 11847 js A ß fo j PWM Current Control Type Stepping Motor Driver Preliminary Package Dimensions Overview unit: mm The LB 11847 is a driver IC for stepping motors 3147B-DIP28H [LB11847] with PWM current control bipolar drive fixed OFF


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    PDF 3147B-DIP28H LB11847] A12G43 00S3m2 LB11847 lt 5217

    Untitled

    Abstract: No abstract text available
    Text: sony . CXA1184M/N Low-voltage FM IF Amplifier Description C X A 1184M and C X A 1184N are designed for FM communication devices. They incorporate a paging system, mixer, IF limiter, FM detector, operational amplifier, comparator, and others. Features • Low operating voltage


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    PDF CXA1184M/N 1184M 1184N CXA1184M 680pF

    transistor B 1184

    Abstract: BFW30 philips BFW30
    Text: bbsaqai □□3213b 730 Philips Sem iconductors • ADY Product specification NPN 2 GHz wideband transistor — ^ i BFW30 N bTE T> AMER PHILIPS/DISCRETE PINNING DESCRIPTION NPN transistor in a T O -7 2 metal envelope, with insulated electrodes and a shield lead connected to the


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    PDF 3213b BFW30 aTO-72 transistor B 1184 BFW30 philips BFW30

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW1134/D SEMICONDUCTOR TECHNICAL DATA M HW 1134 M HW 1184 M HW 1224 M HW 1244 The RF Line L o w D is to rtio n W id eb an d A m p lifie rs . . . designed specifically for broadband applications requiring low distortion c h a ra c te ris tic s . S p e c ifie d fo r use as return a m p lifie rs fo r m id -s p lit and


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    PDF MHW1134/D

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    E2p 93 transistor

    Abstract: E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A
    Text: Philips Sem iconductors m ^ 5 3 ^ 3 1 □DE5£5c1 TTS BIAPX N AMER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION fc,7E Product specification J> ^ BFS17A PINNING NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF


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    PDF BFS17A E2p 93 transistor E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A

    transistor B 1184

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.


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    PDF BUK9618-30 SQT404 transistor B 1184

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors • bbS 3131 □□33131a 730 M AD Y Product specification NPN 2 GHz wideband transistor — BFW30 N AMER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the


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    PDF 33131a BFW30 bb53T31 MEA416

    transistor H1A

    Abstract: C500 TCD5580C h1a transistor
    Text: TOSHIBA TCD5580C TOSHIBA CCD AREA IMAGE SENSOR CCD Charge Coupled Device TCD5580C 2 / 3 INCH 640k FIT CCD (EIA) TCD5580C is a frame interline CCD area image sensor developed for a 3-CCD color camera (NTSC TV system). This device has signal pixels of 1216 (horizontal) x 492


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    PDF TCD5580C TCD5580C transistor H1A C500 h1a transistor

    MOC70

    Abstract: k 1094 transistor MOC70H1 motorola transistor 307 transistor 701 2k transistor 1094
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MOC70 Series S lo tte d O p tic a l S w it c h e s T ransisto r Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­ con N PN phototransistor in a m olded plastic housing. A slot in the housing between the


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    PDF 354G-01 MOC70 k 1094 transistor MOC70H1 motorola transistor 307 transistor 701 2k transistor 1094

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


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