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    TRANSISTOR AOD412 Search Results

    TRANSISTOR AOD412 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AOD412 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AOD4128

    Abstract: 304 pd
    Text: AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in


    Original     		AOD4128 AOD4128 O-252 304 pd PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in


    Original     		AOD4128 AOD4128 27ABC PDF

    AOD412

    Abstract: AOD4128
    Text: AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in


    Original     		AOD4128 AOD4128 AOD412 O-252 1E-05 1E-04 PDF

    ao412

    Abstract: ao41
    Text: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120/L uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose


    Original     		AOD4120 AOD4120/L AOD4120L -AO4120L O-252 ao412 ao41 PDF

    3V02

    Abstract: aod41
    Text: AOD4122 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4122 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


    Original     		AOD4122 O-252 3V02 aod41 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev 2: June 2004 AOD412, AOD412L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use


    Original     		AOD412, AOD412L AOD412 AOD412L O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


    Original     		AOD4120 AOD4120 O-252 DraiD4120 PDF

    AOD4120

    Abstract: No abstract text available
    Text: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


    Original     		AOD4120 AOD4120 O-252 CurrentOD4120 PDF

    AOD412

    Abstract: aoD412 transistor TRANSISTOR AOD412 AOD412L b100Current
    Text: AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		AOD412 AOD412 AOD412L O-252 aoD412 transistor TRANSISTOR AOD412 b100Current PDF

    AOD4120L

    Abstract: AOD4120
    Text: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard


    Original     		AOD4120 AOD4120 AOD4120L O-252 PDF

    aoD412 transistor

    Abstract: No abstract text available
    Text: AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		AOD412 AOD412 AOD412L O-252 aoD412 transistor PDF

    TRANSISTOR D412

    Abstract: D412 transistor d412 DPAK d412 omega D412 d-pak AOD412 JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A
    Text: July 2003 AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		AOD412 AOD412 O-252 TRANSISTOR D412 D412 transistor d412 DPAK d412 omega D412 d-pak JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A PDF