sot69
Abstract: No abstract text available
Text: Central S e m ico n d u cto r Corp. CXT5401 DESCRIPTION: PNP SILICON TRANSISTOR TN> CENTRAL SEMICONDUCTOR CXTS401 type is PN Pstlicon transistor manulaciurod by tho cp<tax>aJ planar process, epoxy molded in a surface mount package, destgnod for high vortjgo am pifiei applications.
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CXT5401
CXTS401
OT-69
TA-25
lCr100tiA
VCB-10V.
200jiA.
sot69
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la 7518
Abstract: TFK 450 BCW60C BCW60D BCW60
Text: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen
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BCW60C
BCW60D
200Hz
la 7518
TFK 450
BCW60
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MPQ2369/D SEMICONDUCTOR TECHNICAL DATA Quad Switching Transistor MPQ2369 NPN Silicon Motorola Preferred Device lÿl liai Pp Pii Fp R I RI LyvJ L/ aJ NPN ÍY H rv i Lil H I LU liJ LàJ LU LiJ MAXIMUM RATINGS Rating Symbol Value
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MPQ2369/D
MPQ2369
PQ2369
B0217
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor BUZ 305 N channel Enhancement mode Avalanche-rated Type BUZ 305 * DS 800 V Aj 7.5 A D S on 1 .0 Í1 Package 1> O rdering Code TO-218 AA C67078-S3134-A2 M axim um Ratings Parameter Sym bol Continuous drain current, Tc = 31 "C
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O-218
C67078-S3134-A2
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upa74ha
Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
Text: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )
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uPA74HA
UPA74
PA74H
gw 348
PA74HA
k 2445 transistor
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BA6196FP
Abstract: HSOP28 035101
Text: Optical disc ICs o 4-channel BLT driver for CD players aj o Q. o BA6196FP The BA6196FP is an IC designed CD players and has an internal 4-channel BTL driver, 5V regulator attached PNP transistor required , standard operational am plifier and a therm al shutdow n feature. The driver has gain adjustm ent
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BA6196FP
BA6196FP
28-pin
100mA
HHHf1l11
HSOP28
HSOP28
035101
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2SC2958
Abstract: transistor AE 2SC2959 2SA1221 F0246
Text: NEC Aj m^Tjvrx '> i; =3 > h = 7 > i> 7 .9 Silicon T ra n sisto rs 2 S C 2 9 5 8 ,2959 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier ^•JgH/PACKAGE DIMENSIONS # g/FEA TU RES oTViDSïtfilèK K7 -Í 7", ¡ti* , MIE, is Ja I S t i . \f y 9 "j :y 3 >
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2SC2958
2SC2959
2SA1221,
A1222
A1221/2SC2958
---2SA1222/2SC2959
2SC2958
transistor AE
2SC2959
2SA1221
F0246
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IC-524
Abstract: l0246 ua53c PA53C T108 m561 upa53c DARLINGTON TRANSISTOR ARRAY
Text: SEC Aj ! Ÿ ÎtC 'ê ' b -7 Com pound / \ f 7 T 9 T r a n s is to r /¿PA53C y — ' > Y > ~F U -f h NPN Silicon Epitaxial Darlington Transistor Array High Gain Amplifier /iPA53C!±, r - 'J y b > W ^ tlfz N P N affim i b 5 § è, W-MM Unit : mm) v'J= r>
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uPA53C
/iPA53C!
300mAfM
2000iil
IC-524
l0246
ua53c
PA53C
T108
m561
upa53c
DARLINGTON TRANSISTOR ARRAY
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2SB624
Abstract: 2SD596 F50450
Text: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)
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100mA)
2SB624
PWS10ms,
2SD596
F50450
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2SD1518
Abstract: 5AE0 2SD1581 C3052
Text: NEC Aj i i T / v 2 S D 1581 S ilicon T ran sis to r f z N P N Silicon Epitaxial Transistor Audio Frequency P o w e r Am plifier 2SD1581 i, x > 9 "iv 9 J T V * — hFE h £1-7(50,/P A C K A G E D IM E N S IO N S (Unit : m m ) 1&=> u 7 7 & ftlW .)± X \ W J j v x f r 'P t f 'y 't z t b , \& W M W ± .X c n ^
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2SD1581
PU0988
2SD1518
5AE0
2SD1581
C3052
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION KM658512/L/L-L Pseudo SRAM 5 1 2 K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time: 80,100,120ns Max. — Cycle Time: Random Read/Write Cycle Time 160, 180, 210ns (Max.) • Low Power Dissipation: 200mW typ. (Active)
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KM658512/L/L-L
120ns
210ns
200mW
Cycles/32ms
A/200
KM658512L-L
32-Pin
600mil)
525mil)
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Untitled
Abstract: No abstract text available
Text: 2DI200A-020 200a S ± /< 7 — y < 7 - POWER TRANSISTOR MODULE : Features m 7 ij — ij • h F E * ''S i' • M M * $ <i •%— K rtS R In c lu d in g Free W h e e lin g D io d e H ig h D C C u rre n t G ain In s u la te d T yp e : A p p l i c a t io n s
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2DI200A-020(
l95t/R
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Untitled
Abstract: No abstract text available
Text: ETN36-O3O 300a s < r7 - \ ' 7 > i > X 9 :Z is z L - ) l' : Outline Drawings POWER TRANSISTOR MODULE : Features • High Current • hFE High DC Current Gain •immm Non Insulated Type : Applications High Power Switching • S H ?W iS 3f{K • DC i - • i§ liU !S
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ETN36-O3O
I95t/R89
Shl50
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027SS
Abstract: 2SK442
Text: TOSHIBA {DISC RE TE /O PT O} 9097250 T O S H IB A Tí < D IS C R E T E /O P T O 99D DE I ci0cì7aS0 DGlbbaS 16635 D r - 3 ¿ /o ò iìih TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S J 1 2 3 SILICON P CHANNEL MOS TYPE TECHNICAL DATA HIGH SPEED SWITCHING APPLICATION.
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2SK442.
027SS
2SK442
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transistor 1Bp
Abstract: 1Bp transistor transistor 337 AJ b338
Text: 1DI300MN-120I300A '•Outline Drawings POWER TRANSISTOR MODULE ■4#^: : Fea tu res • hFE)b''fit' High DC Current Gain • r * - K rt* • s i s w a f t iiE n r jii : A p p licatio n s • ? General Purpose Inverter • Uninterruptible Power Supply • N C X fN R W Servo & Spindle Drive for NC Machine Tools
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1DI300MN-120I300A)
transistor 1Bp
1Bp transistor
transistor 337 AJ
b338
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TRANSISTOR TCD 100 LS
Abstract: B-205
Text: 1DI75E-055 75 a W ïfé T b 'È : O utline D ra w in g s /< 7 POWER TRANSISTOR MODULE : Features • S ft fS i H igh V o lta g e • 7 U— Kl *l 3K • A S O A '7 £ tv • fêjSfe In c lu d in g Free W h e e lin g D io d e E xcellent Safe O p e ra tin g Area
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1DI75E-055
E82988
I95t/R89)
TRANSISTOR TCD 100 LS
B-205
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Untitled
Abstract: No abstract text available
Text: Transistor B minil^eel NPN H atin g s mlnlBefif Bui* 500 pcs T yp e N PN G en eral P urpo se 73-2369 MMBT2369 73-8181 BC818-16 73-8182 BC818 25 73-8183 BC818 40 100 pcs 53-2369 53-8181 53-8182 53-8183 VCEO V Ic mA hFE M in-M ax @ lc VCE 15V 500mA 10mA@1V 25V
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MMBT2369
BC818-16
BC818
500mA
100mA
100MHz
BC846A
BC848B
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tone Dialer
Abstract: ba20 transistor lr48202
Text: SHARP EL EK / MELEC D IV 1SE o | a ific n n a a c m w P u ls e /T o n e D ia le r LSI LR 48202 LR48202 • / -Dy-Ö-? - Pulse/Tone Dialer LSI D e s crip tio n Pin Connections The LR48202 is a CMOS pulse/tone dialer LSI poviding auto-dialing and redialing. It features a builtin 32-digit X 20 or 16-digit X 40 one-touch or twotouch memory and 32-digit redial memory.
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lfi07ia
LR48202
LR48202
32-digit
16-digitX40
32DX20
16DX40
tone Dialer
ba20 transistor
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Untitled
Abstract: No abstract text available
Text: TT TOSHIBA {DIS CR ETE/ OP TO} 9097250 TOSHIBA DISCRETE/OPTO dF I ^ D T V E S O DDlbbSb 99D 16656 SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 SK 3 5 8 SILICON N CHANNEL MOS TYPE (7T-MOS) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
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1C13MAX,
100nA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA <DISCRETE/OPTO> »FI t DTTESO DDlbbBa 99D 16632 SEMICONDUCTOR D T~~ 31-13 TOSHIBA FIELD EFFECT TRANSISTOR 2 S J 1 1 5 SILICON P CHANNEL MOS TYPE TECHNICAL DATA Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION.
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-160V
2SK405
GDlht34
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induction heater circuit
Abstract: induction heater circuit diagram diagram induction heater induction heater
Text: : MITSUBISHI TRANSISTOR MODULES ? QM30HC-2H ! 2 1 I INDUCTION HEATER USE TYPE QM30HC-2H Collector current. 30A Collector-emitter voltage.1600V • hFE
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QM30HC-2H
induction heater circuit
induction heater circuit diagram
diagram induction heater
induction heater
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MC3401
Abstract: 3900N lm39002 3301P MC3401P Tachometer circuit 3401P
Text: MC3301 LM2900 MC3401 LM3900 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2 QUAD OPERATIONAL AMPLIFIERS Quad Single Supply Operational Amplifiers SILICON M ONOLITHIC INTEGRATED CIRCUIT These internally com pensated Norton operational am plifiers are designed specifically for single positive power supply applications found in industrial
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MC3301
LM2900
MC3401
LM3900
MC3301,
MC3401,
LM2900,
3900N
lm39002
3301P
MC3401P
Tachometer circuit
3401P
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H11-0548-5
Abstract: H11-0549-5
Text: HI-546, HI-547 HIS48, HIS49 £11 H a r r i s m SEMICONDUCTOR Single 16 and 8, Differential 8 and 4 Channel CMOS Analog MUXs with Active Overvoltage Protection December 1993 Features Description • Analog Overvoltage Protection. 70VP^> The HI-546, HI-547, HI-548 and HI-549 are analog multiplexers with
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HI-546,
HI-547
HIS48,
HIS49
HI-547,
HI-548
HI-549
10sA/cm2
HI-548:
H11-0548-5
H11-0549-5
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HI9P0508-5
Abstract: 100N 9c transistor HI507
Text: HI-506, HI-507 Hl~508, HIS09 H a r r is S E M I C O N D U C T O R December 1993 Single 16 and 8/Differential 8 and 4 Channel CMOS Analog Multiplexers Features Description • Low On Resistance 1 son The HI-506/HI-507 and HI-508/HI-509 monolithic CMOS multiplexers each include an array of sixteen and eight ana
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HI-506,
HI-507
HIS09
HI-506/HI-507
HI-508/HI-509
AN521)
HI-508,
HI-509
05A/cm2
HI-508
HI9P0508-5
100N 9c transistor
HI507
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