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    TRANSISTOR AH 2 Search Results

    TRANSISTOR AH 2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AH 2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: na. TELEPHONE: 979 378*2922 (212) 227-8008 FAX: (973) 3784880 20 STERN AVE. SPfllNQRELD, NEW JERSEY 07081 U.SA 2N4997 N-P-N SILICON TRANSISTOR *AU JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE AH pIMENilONi IN INCHII —MK- 0.010 (NOT! A) .• N —H o'«> + A^—i r~H_


    Original     		PDF 2N4997

    2n7000 equivalent

    Abstract: transistor 2n7000 field effect transistor 2n7000 N-Channel Enhancement Mode Field Effect Transistor Transistor AH 10 equivalent of 2n7000 TRANSISTOR AH TRANSISTOR2N7000
    Text: N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features • • • • • High density cell design for low RDS ON Voltage controlled small signal switch Rugged and reliable High saturation current capability


    Original     		PDF 2N7000 MIL-STD-202G, 2N7000 2n7000 equivalent transistor 2n7000 field effect transistor N-Channel Enhancement Mode Field Effect Transistor Transistor AH 10 equivalent of 2n7000 TRANSISTOR AH TRANSISTOR2N7000

    VARTA 4006

    Abstract: alkaline varta TRANSISTOR AH varta Transistor AH 10 LR6 varta varta alkaline alkaline varta 4006
    Text: 4006 VARTA Industrial Data Sheet Recommended Application: Universal Type Designation Designation IEC System 4006 LR6 Zn-MnO2 Alkaline Shelf Life (Coding)* 5 years Nominal Voltage [V] Typical Capacity C [mAh] Permissible Temperature Range 1.5 2600 (discharge with high-resistance)


    Original     		PDF 10S/M VARTA 4006 alkaline varta TRANSISTOR AH varta Transistor AH 10 LR6 varta varta alkaline alkaline varta 4006

    2N4400

    Abstract: 2n4401 amplifier 2N4401 transistor 2N4400 2N4401 NPN transistor 2n4400 2N4401
    Text: Small Signal General Purpose Transistors NPN 2N4400/2N4401 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications • RoHS Compliance TO-92 Mechanical Data Case: TO-92, Plastic Package


    Original     		PDF 2N4400/2N4401 MIL-STD-202G, 2N4400 2N4401 2n4401 amplifier 2N4401 transistor 2N4400 2N4401 NPN transistor 2n4400

    LP298X

    Abstract: LM29XX variable voltage regulator LM317 LM3420 Regulated Power Supply Schematic Diagram lm317 LM1117 LM317 LM431 LMV431 LP2981
    Text: Focus on Voltage Regulators Muna Acosta Applications Manager Standard Analog Products October 30, 2002 Good morning. Welcome to today's Web cast on voltage regulator. My name is Muna Acosta. I'm the Application Manager for the Standard Analog Group at National


    Original     		PDF

    2n3904

    Abstract: 2N3903 transistor 2N3904 plastic general purpose transistors npn
    Text: Small Signal General Purpose Transistors NPN 2N3903/2N3904 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications • RoHS Compliance TO-92 Mechanical Data Case: TO-92, Plastic Package


    Original     		PDF 2N3903/2N3904 MIL-STD-202G, 2N3903 2N3904 2N3903 transistor 2N3904 plastic general purpose transistors npn

    TRANSISTOR AH-16

    Abstract: AH-16 transistor Transistor AH10 AH16 ah-16 AH16 transistor AH-16 npn TRANSISTOR AH-10 AH-16 on semiconductor AH MARKING SOT223
    Text: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PDF BCP53T1 OT-223 BCP56 inch/1000 BCP53T3 inch/4000 BCP53T1 BCP53 TRANSISTOR AH-16 AH-16 transistor Transistor AH10 AH16 ah-16 AH16 transistor AH-16 npn TRANSISTOR AH-10 AH-16 on semiconductor AH MARKING SOT223

    TRANSISTOR AH-16

    Abstract: AH MARKING SOT223 AH-16 on semiconductor AH-16 transistor AH16 SOT223 sot 223 marking code AH AH-16 npn TRANSISTOR AH-10 ah-16 AH16 transistor
    Text: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PDF BCP53T1 OT-223 BCP56 inch/1000 BCP53T3 inch/4000 BCP53T1 BCP53-10T1 TRANSISTOR AH-16 AH MARKING SOT223 AH-16 on semiconductor AH-16 transistor AH16 SOT223 sot 223 marking code AH AH-16 npn TRANSISTOR AH-10 ah-16 AH16 transistor

    power 22E

    Abstract: BCX70GR TRANSISTOR AH BCX70 BCX70G BCX70H BCX70HR BCX70J BCX70JR BCX70K
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR BCX70 BCX70 ISSUE 2 – FEBRUARY 95 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. Collector-Emitter Breakdown Voltage V(BR)CEO 45 5 Emitter-Base Breakdown Voltage


    Original     		PDF BCX70 BCX70G 150oC 200Hz power 22E BCX70GR TRANSISTOR AH BCX70 BCX70G BCX70H BCX70HR BCX70J BCX70JR BCX70K

    Multimeter dmm 850

    Abstract: transistor number D 2498
    Text: Low Cost Handheld DMM’s ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ GS-Mark EN61010-1 Approval, Over-Voltage Category II 600 Vdc/Vac; Pollution Degree II Models: HHM26 and HHM28 have RS-232 Interface Safety Input Jacks Logic Probe Tester Models: HHM15, HHM20, HHM23 Temperature Measurement


    Original     		PDF EN61010-1 HHM26 HHM28 RS-232 HHM15, HHM20, HHM23 HHM19, HHM21 HHM18 Multimeter dmm 850 transistor number D 2498

    Untitled

    Abstract: No abstract text available
    Text: 2SB1197K Transistor, PNP Features Dimensions Units : mm • available In SMT3 (SMT, SC-59) package • package marking: 2SB1197K; AH-*, where ★ is hFE code • 2SB1197K (SMT3) 1.9±0.2 low collector saturation voltage 0.96 a (2 )[ 2.4 V CE(sat) - “ ° - 5 v f o r


    OCR Scan     		PDF 2SB1197K SC-59) 2SB1197K; A/-50

    la 7518

    Abstract: TFK 450 BCW60C BCW60D BCW60
    Text: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen


    OCR Scan     		PDF BCW60C BCW60D 200Hz la 7518 TFK 450 BCW60

    LM114

    Abstract: LM114D Monolithic Transistor Pair LM114A LM114AH LM114H alc100
    Text: ïïM M m \ll LM114IH, LM114A/AH Dual NPN Monolithic Transistor GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transis­ tors fabricated on a single silicon substrate. This m onolithic structure makes possible extrem ely tig ht parameter matching


    OCR Scan     		PDF LM114/H, LM114A/AH 300MHz 22MHz 10/iA l-125 LM114 LM114A, LM114D Monolithic Transistor Pair LM114A LM114AH LM114H alc100

    ITCH725D

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOJ- 9097250 TOSHIBA ^aHììln CDI S C R E T E / O P T O “H DeTJ B O T O S O 990 16647 D 0 1 L t 47 b DT-3Ì-I3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 5 5 SILICON N CHANNEL MOS TYPE <7T-MOS ) TECHNICAL DATA INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 71-MOS 100nA ITCH725D

    Untitled

    Abstract: No abstract text available
    Text: EPSON PF400-07 SCI7630M/C Series Switching Regulator I DESCRIPTION •Step-up Switching Regulator 1.5V 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V •L o w Operating Voltage(Min 0.9V) •Voltage Detecting function, Battery Back-up function


    OCR Scan     		PDF PF400-07 SCI7630M/C SCI7363/7632/7635/7636/7639M/C) SCI7630M SCI7630M/C

    Untitled

    Abstract: No abstract text available
    Text: MMBTA63/64 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C DIM CHARACTERISTIC A B SYMBOL Collector-Base MMBTA63/64 Voltage C ollector-E m itter MMBTA63/64 Voltage Em itter-B ase Voltage


    OCR Scan     		PDF MMBTA63/64

    2N2464

    Abstract: transistor 2n2270 2N6369 D 756 transistor
    Text: GENERAL TRANSISTOR CORP 2ME D • BTaflODl 00QD074 0 ■ General Transistor Corporation "T 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL S IG N A L TRANSISTORS NPN General Purpose Typ» No,


    OCR Scan     		PDF 00QD074 100TT T0-102 2N2464 transistor 2n2270 2N6369 D 756 transistor

    npn transistor w27

    Abstract: TRANSISTOR AH-10 S100 NPN Transistor
    Text: CAL O GI C CORP l4flE ]> lflMM322 0 0 0 0 3 3 2 6 m C G C caloric CORPORATION 'TTTt-zn V LM114 /LM114H/LM114A /LM114AH GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transistors fabricated on a single silicon substrate. This


    OCR Scan     		PDF lflMM322 LM114/ LM114AH LM114 /LM114H/LM114A /LM114AH LM114A, npn transistor w27 TRANSISTOR AH-10 S100 NPN Transistor

    Untitled

    Abstract: No abstract text available
    Text: Transistors Digital Transistor Common Emitter Dual Transistors U M G 2 N / F M 2 A G •F e a tu re s 1) Two DTC144E digital transistors in a UMT, SMT package. 2) M ounting co st and area can be cut in half. •S tru c tu re Epitaxial planar type NPN silicon transistor


    OCR Scan     		PDF DTC144E 7fi26c 0D17nD

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBTA13 l^ E 00 072c10 4 | O J NPN EPITAXIAL SILICON TRANSISTOR _ L DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBTA13 OT-23 MMBT6427

    Untitled

    Abstract: No abstract text available
    Text: S A M S UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T -2 9 -2 9 DARLINGTON TRANSISTOR • C ollector-Em itter Voltage: Vc*s =30V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF MPSA64 625mW MPSA62

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MPS6522 D | 7*^4145 0007327 1 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: P c max =625mW A BSO LU TE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF MPS6522 T-29-21 625mW 2N3906

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBT5086 14E D I 0007573 M | PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltape Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF MMBT5086 OT-23

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR I NC 14E | 7*11,4142 0007^^6 «1 | T - t f - * ? MMBTA63 PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C C h aracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBTA63