BUK438W-800A
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK438W-800A/B
BUK438
-800A
-800B
OT429
T0247)
BUK438W-800A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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BUK464-60H
SQT404
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ss 297 transistor
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2525DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to
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BU2525DF
1E-06
1E-02
ss 297 transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
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BU2525DW
IE-02
1E-04
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TRANSISTOR BU2525DF
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to
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BU2525DF
100-PC
1E-06
1E-04
1E-02
TRANSISTOR BU2525DF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
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BU2525DW
1E-04
1E-02
1E-06
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UMW13N
Abstract: FMW13 T148 T149
Text: h Transistors UM W13 N/FMW 13 î — h 7 > v ^ ^ / D u a l Mini-Mold Transistor x h î $ * V 7 J l ' 7 l s - t B N P N y ‘j 3 > h ÿ > y Z $ Epitaxai Pianar NPN Silicon Transistor ¡S lâ tiH iffl/R F Amplifier • £fîfé\ri*0/D im en sio n $ Unit : mm
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W13N/FMW13
UMW13N
FMW13
UMW13N
SC-70)
SC-59)
UMW13N/FMW13
FMW13
T148
T149
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kd smd transistor
Abstract: No abstract text available
Text: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated
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28N03L
SPD28N03L
Q67040-S4139-A2
P-T0252
P-T0251-3-1
Q67040-S4142-A2
SPU28N03L
S35bG5
Q133777
SQT-89
kd smd transistor
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VPT05155
Abstract: buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051
Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vds 600 V 10 ^bS on Package Ordering Code 4.5 A 1.6Í2 TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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VPT05155
O-220
C67078-S1321-A2
VPT05155
buz90
SiEMENS PM 350 98
C67078-S1321-A2
s34 diode
transistor buz 90
GP-051
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output
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MHPM7B12A120A/D
MHPM7B12A120A
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transistor sb 772
Abstract: TRANSISTOR D 1853 ACS 086 SK FN 521 512 CJ3 2SK1853 pj 0266 SB 772 KSB 772 SF94
Text: s— S 5 • S ''— NEC h* MOS MOS F E T M O S Field Effect Power Transistor 2SK1853 N + s< n— X >T M O S F E T y ^ I t i 2 S K 1853 ¿ ,N > 5v F E T T", h 0 ^ °7 - £ W H ] M O S (^ - fi i mm i c co a 1.* (3 j: ^ y" r " ' <A X T'-to ix ^ y f > i i :* > m % T",
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2SK1853
transistor sb 772
TRANSISTOR D 1853
ACS 086
SK FN 521
512 CJ3
2SK1853
pj 0266
SB 772
KSB 772
SF94
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221A-06
Abstract: AN569 MTP8N50E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E-FET ™ High Energy Power FET MTP8N50E N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS on = °-8 OHM T h is a d va n ce d high vo lta g e T M O S E -F E T is d e sig n e d to
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BC 939 Transistor Data
Abstract: MJ4647 MJ4646
Text: MOTOROLA S C XSTRS/R F 12E 0 I b3b75S4 MOTOROLA 0004103 I T*+J7 MJ4646 MI4647 SEMICONDUCTOR TECHNICAL DATA 1.0 AM PERE POWER TRANSISTORS PNP SILICON 200-300-400 VOLTS 5 WATTS PNP SILICO N POWER TRANSISTORS . . . designed for high-voltage amplifier and saturated switching appli
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b3b75S4
MJ4646
MI4647
BC 939 Transistor Data
MJ4647
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DG41
Abstract: No abstract text available
Text: 1 9 -47 28 : R ev 2 :8 / 9 5 I m p r o v e d , Quad, SPST A n a l o g S w i t c h e s Description New Features ♦ Plug-In Upgrade fo r Industry-Standard DG411/DG412/DG413 ♦ Improved ros ON Match Between Channels (3& max) ♦ Guaranteed r F L A T ( O N ) Over Signal Range (A4ii)
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DG411/DG412/DG413
411/DG412/DG41
16-PIN
DG41
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mosfet 600V 50A
Abstract: No abstract text available
Text: rz7 SGS-THOMSON Ä 7# M ûœ ËŒ O T «® S T T A 9 0 1 2 T V 1 /2 TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 45A I f (a v ) V (typ) 65ns Vf (max) 1.85V K2 A2 K1 A1 A2 Kl IE O 1200V rrm trr PRELIM IN ARY DATA
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STTA9012T
mosfet 600V 50A
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SE 442
Abstract: MARKING M1W 2N696 TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent
Text: M lL -S -1 9 5 0 0 /9 9 E 31 July 1967 su P e r s e ulng MI L - S - 1 9 5 0 0 /99D 3 D ecem ber MILITARY SPECIFICATION S E M IC O N D U C T O R D E V IC E , T R A N S I S T O R , P I T C H I N G , M E D IU M -P O W E R TYPES 2N696 AND 2N697 T h is s p e c ific a tio n is m a n d a to ry f o r u s e by a ll D e p a r t
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MlL-S-19500/99E
L-S-19500/99D
2N696
2N697
500/99D.
SE 442
MARKING M1W
TRANSISTOR 2n697
MKAC
2N697
RAW MATERIAL INSPECTION procedure
2N697 equivalent
2N697 JAN
2N696 equivalent
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3 phase igbt INVERTER ac motor
Abstract: 7b15a
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M H PM 7B 15A 60A integrated Power Stage for 1.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A10E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase
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MHPM7A10E60DC3)
HPM7B15A60A
3 phase igbt INVERTER ac motor
7b15a
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g50n
Abstract: No abstract text available
Text: STD12NE06L N - CHANNEL 60V - 0.08 Q - 12 A - DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss S T D 12N E 06L 60 V Id RDS on < 0.12 Q 12 A . TYPICAL F b s (o n ) = 0.09 Ü . EXCEPTIONALdv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 1 0 0 % AVALANCHE TESTED
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STD12NE06L
g50n
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ICL8062
Abstract: LED Driver add 5201 camera 24 pin ICL8061 ATIC 39 b4 8062C 5201 IC schematic diagram of ip camera sensor circuit diagram of pill camera
Text: ICL8061/8062 Camera Exposure Control Circuits FEATURES • 50pA to 500/iA photocell current range • Low power dissipation • Track & hold ckt for mirror-up or exposure memory use. • Direct linearized inputs for aperture values, sensitivity, manual shutter speed, etc.
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ICL8061/8062
500/iA
ICL8061
8061/D
ICL8062
LED Driver add 5201
camera 24 pin
ATIC 39 b4
8062C
5201 IC
schematic diagram of ip camera sensor
circuit diagram of pill camera
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stepping motor EPSON EM - 234
Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A
Text: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B. T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system
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RS232
RS232C
stepping motor EPSON EM - 234
EPSON motor em 402
induction cooker fault finding diagrams
ECG transistor replacement guide book free
stepping motor EPSON EM 234
stepping motor EPSON em 331
S576B
transistor d389
maranyl
TMS1601A
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3x4 matrix keypad
Abstract: mk5089 keypad 3x4 pin configuration keypad 3x4 8 pin configuration mk5089 DTMF circuit diagram of keypad interface with dtmf Mostek MK5089 keypad 3x4 Mostek MK5380 12 key 3x4 KEYPAD 14 pin
Text: iS THOMSON COMPONENTS MOSTEK DATA SHEET COMMUNICATIONS PRODUCTS 10-NUMBER REPERTORY TONE/ PULSE DIALER MK5376 FEATURES □ Converts push-button inputs to both DTMF and pulse signals □ Stores ten 16-digit telephone num bers including last num ber dialed V-
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10-NUMBER
MK5376
16-digit
13KEY
3x4 matrix keypad
mk5089
keypad 3x4 pin configuration
keypad 3x4 8 pin configuration
mk5089 DTMF
circuit diagram of keypad interface with dtmf
Mostek MK5089
keypad 3x4
Mostek MK5380
12 key 3x4 KEYPAD 14 pin
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ygc 801
Abstract: chip ygc 801 yx 801 2N6966 2N6967 801 ygc 2N6969 2N6968 yx 801 ic DIODE dla 9-F
Text: Mil S-19500/569 IS September 1987 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL. SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS This specification Is approved for use by a ll Depart ments and Agencies of the Department of Defense.
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MIL-S-19500/569
2N6966,
2N6967,
2N6968,
2N6969
MIL-S-19500.
T0-213AA.
ygc 801
chip ygc 801
yx 801
2N6966
2N6967
801 ygc
2N6968
yx 801 ic
DIODE dla 9-F
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68hc68r2
Abstract: 68hc68 3771 80C51 CDP68HC05C4 CDP68HC05C8 CDP68HC05D2 CDP68HC68R1 CDP68HC68R2
Text: 33 C D P 68H C 68R 1 H a rris CD P 6 8 HC68R2 C M O S 1 2 8 W o rd C D P 6 8 H C 6 8 R 1 and 2 5 6 W o rd (C D P 6 8 H C 6 8 R 2 ) by 8 -B it S tatic RAMs J a n u a ry 1991 P in o u t F e a tu re s • PACKAGE TYPE E TOP VIEW Fully S tatic O p eratio n
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cdp68hc68r1
CDP68HC68R2
CDP68HC68R1)
CDP68HC68R2)
CDP68HC68R1
CDP68HC68R2
CDP68HC68R1,
92CS-377I4
68hc68r2
68hc68
3771
80C51
CDP68HC05C4
CDP68HC05C8
CDP68HC05D2
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M3P1
Abstract: KD 2107 X3032
Text: XC3000, XC3000A, XC3000L, XC3100, XC3100A Logic Cell Array Families £ Product Description Features • Complete XACT Development System - Schematic capture, automatic place and route - Logic and timing simulation - Interactive design editor for design optimization
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XC3000,
XC3000A,
XC3000L,
XC3100,
XC3100A
XC3100A
M3P1
KD 2107
X3032
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