Transistor A14
Abstract: a14 Transistor MMBTA13LT1 MMBTA14LT1 a13 marking transistor
Text: MMBTA13LT1/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage
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MMBTA13LT1/14LT1
100mA
100MHz
40x40x1
300us
MMBTA13LT1
MMBTA14LT1
Transistor A14
a14 Transistor
a13 marking transistor
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Transistor A14
Abstract: MMBTA14LT1 MMBTA13LT1
Text: MMBTA13/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage Vces
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MMBTA13/14LT1
100uA
100mA
100MHz
40x40x1
300us
MMBTA13LT1
MMBTA14LT1
Transistor A14
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c215a
Abstract: 1902 transistor BTNA13A3 BTNA14A3
Text: CYStech Electronics Corp. Spec. No. : C215A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA13A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA63A3. Equivalent Circuit
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C215A3
BTNA13A3
BTNA14A3
BTPA63A3.
UL94V-0
BTNA14A3
c215a
1902 transistor
BTNA13A3
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EM7164SU16
Abstract: No abstract text available
Text: Preliminary merging Memory & Logic Solutions Inc. EM7164SU16 Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jul. 11 , 2005 Preliminary 0.1 1’st Revision
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EM7164SU16
1Mx16
690-7t
100ns
120ns
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Untitled
Abstract: No abstract text available
Text: CY7C194BN 256 Kb 64 K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Transistor transistor logic (TTL) compatible inputs and outputs
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CY7C194BN
CY7C194BN
AN1064,
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10 micro farad capacitor
Abstract: No abstract text available
Text: CY7C199CN Automotive 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 12 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor-transistor logic (TTL) compatible inputs and outputs
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CY7C199CN
28-pin
10 micro farad capacitor
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Untitled
Abstract: No abstract text available
Text: CY7C199CN 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 15 ns and 20 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor transistor logic (TTL) compatible inputs and outputs
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CY7C199CN
CY7C199CN
28-pin
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Untitled
Abstract: No abstract text available
Text: CY7C199CN 256 K 32 K x 8 Static RAM General Description [1] Features • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor transistor logic (TTL) compatible inputs and outputs
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CY7C199CN
CY7C199CN
28-pin
28-pin
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A1385
Abstract: A-1385 A1385-Z
Text: SILICON TRANSISTOR 2 S A 1 3 8 5 -Z PNP SILICON EPITAXIAL TRANSISTOR M P -3 DESCRIPTION 2S A1385-Z is designed fo r A u d io Frequency A m p lifie r and S w itchin g, especially in H y b rid Integrated C ircuits. FEATURES PACKAGE DIMENSIONS in millimeters
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2SA1385-Z
A1385-Z
2SC3518-Z
2SA1385-2
A1385
A-1385
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transistor BD 430
Abstract: 0436L
Text: 2SC D • fl23Sb05 000435" 5 » S I E S - PNP Silicon Planar Transistor * BD 430 ', c r . 0 4 3 5 9 D SIEMENS AKTIEN6ESELLSCHAF T ~ .3 3 ~ / .Z - BO 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 2 0 2 . Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in
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fl23Sb05
0D043fal
0436L
fl335b05
Q0043b2
transistor BD 430
0436L
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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NPN Transistor BC548B
Abstract: BC548 BC238B npn bc337-40 npn transistor
Text: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB
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T092J
BC167A
BC167B
BC168A
BC168B
BC168C
BC169B
BC169C
BC182LA
BC182LB
NPN Transistor BC548B
BC548
BC238B npn
bc337-40 npn transistor
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Q62702-D1070
Abstract: TRANSISTOR D 1785 BD430
Text: asc D • â23SbOS OüOMBS'i 5 m Z I Z G ■ BD 430 PNP Silicon Planar Transistor ',cr. 0 4 3 5 9 SIEMENS AKTI EN 6E SE LL SCH AF D T -3 3 -/ 7 BD 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in
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T-33-/7
Q62702-D1070
fl23Sb05
Q0043b2
BD430
Q62702-D1070
TRANSISTOR D 1785
BD430
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2N2222A
Abstract: 05G433 OA 60 TRANSISTOR 707 a13707
Text: L ALLEGRO MICROSYSTEMS INC T3 D 05Q433Ô G003b43 T • T - q i- o / PROCESS BBC Process BBC NPN Small-Signal Transistor The electrical characteristics of selected versions of Process BBC, the NPN counterpart of Sprague Electric’s planar PNP Process BDA transistor, match
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0S0433Ã
Q0Q3b43
500mA
05G433Ã
0QD3b44
2N2222A
05G433
OA 60
TRANSISTOR 707
a13707
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A1396
Abstract: No abstract text available
Text: ALLE6R0 MICROSYSTEMS INC T3D 1> • 05D433Ö DD03743 3 ■ ALGR PROCESS YCA Process YCA NPN Small-Signal Transistor Process Y C A is a double-diffused epitaxial planar N PN silicon transistor designed for use in generalpurpose switching and amplifier circuits. It can oper
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05G433A
1000mA
00090sa
A1396
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC TB ] • 0504330 0003bS5 b ■ ALGR r - 9 )• O i PROCESS BLA Process BLA NPN High-Voltage Transistor The NPN process BLA transistor is a double diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current
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0003bS5
D50433Ã
GG03b5b
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TRANSISTOR G13
Abstract: 702 TRANSISTOR npn 13701
Text: ALLEGRO MICROSYSTEMS INC 13 » • DSDM338 QOOSbMl b B A L 6 R T - ^ l- o i PROCESS BAA Process BAA NPN Small-Signal Transistor This double-diffused, silicon epitaxial planar de vice is designed for general-purpose use. Selected versions of the Process BAA NPN transistor find
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0003b41
QS0433Ã
DG03Li42
TRANSISTOR G13
702 TRANSISTOR npn
13701
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transistor a13
Abstract: A13 transistor
Text: ALLEGRO MICROSYSTEMS INC T3]> ] • 0504330 G0G3b37 4 P R O CESS A JA T -^ l "O I Process AJA NPN Small-Signal Transistor Process A JA is a double-diffused epitaxial silicon transistor designed for use in medium-power, general-purpose amplifiers and as a switch for line volt
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0003b37
transistor a13
A13 transistor
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 DD037S3 t> ■ î-91-01 P R O C E S S NJ16 Process NJ16 N-Channel Junction Field-Effect Transistor Process NJ16 is an N-channel junction fieid-effect transistor designed for low-current, general-purpose applications. This process is particularly useful in
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DD037S3
50433A
T-91-01
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B 773 transistor
Abstract: 2N4403
Text: ß. ' •- ALLE6R0 MICROSYSTEMS INC T3 D • QS0433ß QQQ3b71 4 ■ AL6R T -9 1-0 1 PROCESS ODA Process DDA PNP Small-Signal Transistor Process DDA is a double-diffused epitaxial planar silicon PNP transistor. It is designed for use as a lownoise, high-gain amplifier or as a medium-power
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50433A
T-91-01
G50433Ã
G003b72
T-91-01
-al77
B 773 transistor
2N4403
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Transistor A137
Abstract: No abstract text available
Text: L _ _ ALL E GR O MICROSYSTEMS INC T3 T> • 0 S D M 3 3 Ö D 0 D 3 b 7 7 S I ALGR T-91-01 PROCESS DJC Process DJC PNP Small-Signal Transistor Designed for general-purpose switch and amplifier applications, the Process DJC PN P transistor oper
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00Q3b77
T-91-01
SGM33Ã
0003b7fl
T-91-Ã
Transistor A137
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transistor a13
Abstract: A13 transistor bma 023 T 427 transistor
Text: AL LE GR O MICROSYSTEMS INC =J3 D • 0SGM33Ö DÜ03bS7 T ■ ALGR T -V h ö l PROCESS BMA Process BMA PNP High-Voltage Transistor The P N P process B M A transistor is a double diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current
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05D433fl
0003hS7
05DM33fl
VBE10NI
transistor a13
A13 transistor
bma 023
T 427 transistor
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Untitled
Abstract: No abstract text available
Text: ALL E GR O MICROSYSTEMS INC T3 D • 05D433Ô 00037SS PR O CESS NJ26 T ■ ALGR T -9 1 -0 1 Process NJ26 N-Channel Junction Field-Effect Transistor Process NJ26 is an N-channel junction field-effect transistor designed for general-purpose amplifier ap plications at frequencies of up to 450 MHz.
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05D433Ã
00037SS
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05G433
Abstract: No abstract text available
Text: A L L E GR O M C R O S Y S T E M S INC S3 » • 05Ü4338 OODSbbS HALGR T - ^ l- o l PROCESS BXE Process BXE PNP Small-Signal Transistor Process BXE is a double-diffused PNP epitaxial planar silicon transistor designed for use in generalpurpose amplifier and switching applications. Its
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05D433S
T-91-ol
200mA
004SQ.
BE10N1
05G433
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