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    TRANSISTOR A030 Search Results

    TRANSISTOR A030 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA2192 Ordering number : ENA0307 2SA2192 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT process. Large current capacitance.


    Original     		PDF ENA0307 2SA2192 PW100 A0307-4/4

    2SA21

    Abstract: 2SA2192 ENA0307
    Text: 2SA2192 Ordering number : ENA0307 SANYO Semiconductors DATA SHEET 2SA2192 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT process.


    Original     		PDF 2SA2192 ENA0307 A0307-4/4 2SA21 2SA2192 ENA0307

    Untitled

    Abstract: No abstract text available
    Text: VP0550 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0550 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF VP0550 VP0550 DSFP-VP0550 A030609

    Untitled

    Abstract: No abstract text available
    Text: VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF VP0106 VP0106 DSFP-VP0106 A030509

    VP0109ND

    Abstract: No abstract text available
    Text: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF VP0109 VP0109 DSFP-VP0109 A030509 VP0109ND

    Untitled

    Abstract: No abstract text available
    Text: VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0104 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF VP0104 VP0104 DSFP-VP0104 A030609

    transistor marking code 12W SOT-23

    Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		PDF LND150 LND150 DSFP-LND150 A030609 transistor marking code 12W SOT-23 12w SOT 23 package marking code marking 12W SOT23 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150

    irf5303

    Abstract: Breaker locks Snubber circuits theory, design and application HV300 HV300LG-G IRF530 A-0305 OF IRF530
    Text: HV300 Hotswap, Inrush Current Limiter Controllers Negative Supply Rail Features General Description ► ► ► ► ► The Supertex HV300, Hotswap Controller, Negative Supply controls the power supply connection during insertion of cards or modules into live backplanes.


    Original     		PDF HV300 HV300, DSFP-HV300 A030509 irf5303 Breaker locks Snubber circuits theory, design and application HV300 HV300LG-G IRF530 A-0305 OF IRF530

    IRF5303

    Abstract: HV310 HV310LG-G IRF530
    Text: HV310 Hotswap, Inrush Current Limiter Controllers Negative Supply Rail Features General Description ► ► ► ► ► The Supertex HV310, Hotswap Controller, Negative Supply controls the power supply connection during insertion of cards or modules into live backplanes.


    Original     		PDF HV310 HV310, DSFP-HV310 A030509 IRF5303 HV310 HV310LG-G IRF530

    IP2C2

    Abstract: multi 9 c6 dpn jrc ic chip 4392 ic equivalent philips 433mhz receiver smd0805 150pf philips BC808 BFQ67 XE1201 XE1201A
    Text: Application Note AN1201A.04 The XE1201A for Channelized Application Bases _ AN1201A.04 Application Note _ The XE1201A for Channelized applications bases on an external PLL Author : Gael Coron For further information, please contact


    Original     		PDF AN1201A XE1201A SMD0805 A0301-119 AN1201 XE1201 IP2C2 multi 9 c6 dpn jrc ic chip 4392 ic equivalent philips 433mhz receiver smd0805 150pf philips BC808 BFQ67

    EL210

    Abstract: No abstract text available
    Text: HV841 High Voltage Dual EL Lamp Driver Features General Description ► ► ► ► ► ► ► ► ► The Supertex HV841 is a high voltage driver designed for driving two EL lamps with a combined area of 3.5 square inches. The input supply voltage range is from 2.0V to 5.8V.


    Original     		PDF HV841 10-lead 50BSC DSFP-HV841 A030207 EL210

    XE1201

    Abstract: BC808 BFQ67 XE1201A XM1201 RF amplifier antenna 125khz TQFP32 wireles philips UHF transceiver
    Text: Application Note AN1201A.05 Move on from the XE1201 to the Advanced XE1201A _ AN1201A.05 Application Note _ Move on from the XE1201 to the Advanced XE1201A Author : Gael Coron For further information, please contact


    Original     		PDF AN1201A XE1201 XE1201A SMD0805 BC808 BFQ67 XE1201A XM1201 RF amplifier antenna 125khz TQFP32 wireles philips UHF transceiver

    RF amplifier antenna 125khz

    Abstract: 125kHz loop antenna introduction of transistor files A0301 RF pcb antenna 125khz XM1201A 10E-2 XE1200 XE1201 XE1201A
    Text: Application Note AN1201A.03 The XM1201A Module Reference Board for XE1201 _ AN1201A.03 Application Note _ The XM1201A module Reference Board for XE1201A Author : Gael Coron For further information, please contact XEMICS SA


    Original     		PDF AN1201A XM1201A XE1201 XE1201A RF amplifier antenna 125khz 125kHz loop antenna introduction of transistor files A0301 RF pcb antenna 125khz 10E-2 XE1200 XE1201 XE1201A

    Westinghouse SCR handbook

    Abstract: n41 transformer core 171 100khz KF 13003 calculation of transformer differential relay RET 670 Allen-Bradley 1336 13001 TRANSISTOR thomas and betts wt117 KF 13003 F 230v to 5v circuit using 13003 transistor ALLEN-BRADLEY 1395 Burden RESISTOR
    Text: 1336 IMPACT Adjustable Frequency AC Drive 0.37 - 597 kW 0.5 - 800 HP Version 1.xx - 4.xx User Manual Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the Application,


    Original     		PDF

    TL235

    Abstract: No abstract text available
    Text: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency


    Original     		PDF PTVA030121EA PTVA030121EA H-36265-2 TL235

    TL235

    Abstract: ATC100B301JW200X
    Text: PTVA030121EA Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package.


    Original     		PDF PTVA030121EA PTVA030121EA H-36265-2 90ances. TL235 ATC100B301JW200X

    3 phase dc converter afe circuit diagram igbt

    Abstract: electronic power generator using transistor projects EARTHING SMALL ELECTRONICS PROJECTS in plc EMC design B25668 dc to ac sinewave converter use IGBT circuit for wind mill SSB1630-9-E TRANSISTOR A030
    Text: EMC filters Application notes Date: January 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited. EMC filters Converters with an active front end AFE


    Original     		PDF SSB1682-E-E B84131-PLC) 3 phase dc converter afe circuit diagram igbt electronic power generator using transistor projects EARTHING SMALL ELECTRONICS PROJECTS in plc EMC design B25668 dc to ac sinewave converter use IGBT circuit for wind mill SSB1630-9-E TRANSISTOR A030

    schematic DIAGRAM AVR 150 kva GENERATOR

    Abstract: schematic DIAGRAM AVR 500 kva GENERATOR schematic diagram igbt inverter welding machine A143 PNP switching transistor 007NFEF2 040HFEF2 005NFEF2 L200-011NFE 200V DC TO 240V AC inverter schematic diagram schematic diagram UPS 5 KVA
    Text: Cover L2002 Series Inverter Instruction Manual • Single-phase Input 200V Class • Three-phase Input 200V Class • Three-phase Input 400V Class Manual Number: NB675X Sept. 2006 After reading this manual, keep it handy for future reference. Hitachi Industrial Equipment Systems Co., Ltd.


    Original     		PDF L2002 NB675X schematic DIAGRAM AVR 150 kva GENERATOR schematic DIAGRAM AVR 500 kva GENERATOR schematic diagram igbt inverter welding machine A143 PNP switching transistor 007NFEF2 040HFEF2 005NFEF2 L200-011NFE 200V DC TO 240V AC inverter schematic diagram schematic diagram UPS 5 KVA

    Texas Instruments TTL

    Abstract: texas instruments 74LS612 TMS4500 sn74als966 sunny SCO 020 IC PAL 006A tms4500a SN74AS888 A61686 74ls610
    Text: SDVD001 .LSI Logic Data Book 1986 ~ TEXAS INSTRUMENTS General Information LSI Devices Application Reports Mechanical Data LSI Logic Data Book TEXAS INSTRUMENTS IMPORTANT NOTICE Texas Instruments Til reserves the right to make changes in the devices or the device specifications identified in this publication


    Original     		PDF SDVD001 11----I 11M/S SDV011DV600R Texas Instruments TTL texas instruments 74LS612 TMS4500 sn74als966 sunny SCO 020 IC PAL 006A tms4500a SN74AS888 A61686 74ls610

    Acopian Power Supply Model A24H1200

    Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
    Text: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5


    Original     		PDF

    2N3546

    Abstract: MPQ3546 MPQ3646 MHQ3546
    Text: M H Q 3 5 4 6 s ilic o n M PQ 3 5 4 6 QUAD DUAL-IN LINE PNP SILICON ANNULAR SWITCHING TRANSISTORS QUAD DUAL-IN-LINE PNP SILICON SWITCHING TRANSISTOR . . . designed for iow-levei, high-speed switching applications. • Choice of Ceramic or Plastic Package


    OCR Scan     		PDF MHQ3546 MPQ3546 2N3546 O-116 2N3546 MPQ3546 MPQ3646 MHQ3546

    LB 124D transistor

    Abstract: TAA970 78L12 cj ne553 TBA915 78M06CG signetics Analogue IC 1977 75S208 MLM311P1 78M08CG
    Text: pages index 2- 3 com petitors cross-reference 4- 9 selection guide 10-13 abridged data 14-24 d iffe re n tia l am plifiers abridged data 25 com parators selection guide 26-27 abridged data 28-31 selection guide 32-35 abridged data 36-39 general industrial


    OCR Scan     		PDF SO-16 LB 124D transistor TAA970 78L12 cj ne553 TBA915 78M06CG signetics Analogue IC 1977 75S208 MLM311P1 78M08CG

    MG15N2YS1

    Abstract: ALY TRANSISTOR transistor ALY
    Text: GTR MODULL SILICON N CHANNEL IGBT MG15N2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=1.Oys Max. trr=0.5us(Max.) . Low Saturation Voltage: Vqe ( s a t )= 5.OV(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in one


    OCR Scan     		PDF MG15N2YS1 --10V MG15N2YS1 ALY TRANSISTOR transistor ALY

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680