9016 transistor
Abstract: F 9016 transistor npn 9016 transistor 9016 97 G transistor ic st 9016 hFE is transistor 9016 npn transistor 9016 npn
Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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9016 transistor
Abstract: F 9016 transistor 9016 st 9016 transistor 9016 npn npn 9016 transistor
Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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9016 transistor
Abstract: F 9016 transistor npn 9016 transistor
Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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npn 9016 transistor
Abstract: 9016 transistor transistor 9016 npn st 9016 F 9016 transistor 9016 transistor 9016 H 9016 9016 NPN transistor st9016
Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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7333 A
Abstract: transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333
Text: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70
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MPSA06
7333 A
transistor MPSA06
MPSA06
npn 9016 transistor
transistor 7333
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MPSA14
Abstract: transistor 7333
Text: MPSA14 NPN Darlington Transistor TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H K 5° 1.40 1.14 1.53 12.70 Dimensions : Millimetres Pin Configuration 1. Collector 2. Base 3. Emitter Page 1
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MPSA14
MPSA14
transistor 7333
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BU208D
Abstract: NPN Transistor 1500V 20a H 9645
Text: BU208D Horizontal Deflection Transistor NPN Silicon Horizontal Defection Transistors with integrated damper diodes are specifically designed for use in large screen colour deflection circuits. Features: • VCES = 1500V VCEO sus = 700V (Minimum). • Low Saturation
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BU208D
BU208D
NPN Transistor 1500V 20a
H 9645
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MJE13005
Abstract: MJE-13005 MJE130 transistor mje13005 circuit based on MJE13005 8805 VOLTAGE REGULATOR MJE13005 TRANSISTOR F 9016 transistor transistor 7333
Text: MJE13005 Power Transistor Switchmode Series NPN Power Transistors are designed for use in high-voltage, high-speed, power switching in inductive circuits, they are particularly suited for 115 and 220V switchmode applications such as switching regulator's, inverters, DC-DC
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MJE13005
MJE13005
MJE-13005
MJE130
transistor mje13005
circuit based on MJE13005
8805 VOLTAGE REGULATOR
MJE13005 TRANSISTOR
F 9016 transistor
transistor 7333
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bf199 equivalent
Abstract: BF199 transistor NPN BF199 bf199 transistor BF199 RF
Text: BF199 NPN Silicon Transistor Features: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40
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BF199
bf199 equivalent
BF199
transistor NPN BF199
bf199 transistor
BF199 RF
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2N3442
Abstract: transistor 2n3442 npn 9016 transistor transistor 9016 npn
Text: 2N3442 High Power Industrial Transistor NPN silicon power transistor designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features: • Collector-Emitter Sustaining Voltage
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2N3442
2N3442
transistor 2n3442
npn 9016 transistor
transistor 9016 npn
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9275 transistor
Abstract: transistor k 208 MPSA42 MPSA42 multicomp
Text: MPSA42 High Voltage Transistor Features: • Devices with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN silicon planar epitaxial transistor. • Complementary high Voltage Transistor.
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MPSA42
9275 transistor
transistor k 208
MPSA42
MPSA42 multicomp
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MPSA42
Abstract: No abstract text available
Text: MPSA42 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Silicon Planar Epitaxial Transistor. • Complementary high Voltage Transistor.
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MPSA42
MPSA42
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NPN 200 VOLTS POWER TRANSISTOR
Abstract: transistor buv48a npn 9016 transistor NPN Transistor 8A transistor 9016 transistor Ic 4A datasheet NPN BUV48A transistor 7333
Text: BUV48A Power Transistor High Voltage Switching Switchmode Series NPN Power Transistors are designed for use in high-voltage, highspeed, power switching regulators, converters, inverters, motor control system application. Features: • Collector-Emitter sustaining voltage VCEO sus = 450V (Minimum).
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BUV48A
NPN 200 VOLTS POWER TRANSISTOR
transistor buv48a
npn 9016 transistor
NPN Transistor 8A
transistor 9016
transistor Ic 4A datasheet NPN
BUV48A
transistor 7333
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bf199 equivalent
Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199
Text: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40
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BF199
bf199 equivalent
bF199 transistor
BF199
F 9016 transistor
transistor 9016 npn
03 transistor
data bf199
ic 9400
BF199 RF
transistor NPN BF199
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MPSA44
Abstract: 9016 transistor
Text: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages, Low
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MPSA44
MPSA44
9016 transistor
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farnell
Abstract: Darlington transistor to 92 Darlington transistor MPSA14
Text: MPSA14 NPN Darlington Transistor TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.40 1.14 H K 1.53 12.70 - Dimensions : Millimetres Pin Configuration: 1. Collector 2. Base 3. Emitter Page 1
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MPSA14
farnell
Darlington transistor to 92
Darlington transistor
MPSA14
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BUX47
Abstract: 7333 A
Text: BUX47 Power Transistor NPN Silicon Power Transistors are designed for use in high-speed switching and linear amplifier applications. Features: • High Current Capabilities. • Fast Turn-On and Turn Off. • Power Dissipation -PD = 125W at TC = 25°C. • DC Current Gain
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BUX47
BUX47
7333 A
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Transistor C G 774 6-1
Abstract: 2N3440
Text: 2N3440 High Voltage Transistor Features: • NPN High Voltage Silicon Transistor. • High Voltage Silicon Planar Transistors used in High Voltage and High Power Amplifier Applications. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74
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2N3440
Transistor C G 774 6-1
2N3440
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MJ10004
Abstract: MJ-10004 OB 2268 darlington power transistor 10a
Text: MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line
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MJ10004
MJ10004
MJ-10004
OB 2268
darlington power transistor 10a
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JE9016
Abstract: A78G
Text: NPN SILICON TRANSISTOR ELECTRON DEVICE JE9016 DESCR IPTIO N The JE 9016 is designed fo r use in A M converter and FM PAC K A G E D IM E N S IO N S in m illim e ters lin ch es 5.2 MAX. RF am p lifie r o f low noise. FE A TU R E S • High to ta l power dissipation. Py : 400 mW)
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JE9016
JE9016
A78G
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transistor c 9018
Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
Text: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF
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T0-92B
500fi
10kfi
transistor c 9018
Transistor CL 100
9011 9012 9013 9014 9018
transistor 9014 NPN
transistor 9013 NPN audio output
V. 9014 c
9016 transistor
audio output TRANSISTOR NPN 9013
9011 NPN transistor
npn 9016 transistor
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CP1005
Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014
Text: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I
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KM90II
KM90I5
KM901I/8
KM90II/8
KM90I4
KM9015
KM90I:
KM90i
to-92a
CP1005
9011 9012 9013 9014 9018
C 9014 transistor
transistor 9014 C npn
9011 NPN transistor
9011 transistor
9015 PNP
9016
9013 NPN Output Transistor
transistor npn c 9014
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9014 ch
Abstract: transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor
Text: »v'.-T i V.y*, 7 “ •1 v í- j m £?| P Im I I I m . C-iS.fi w - f , , :;1 | AM. FM RADIO TRANSISTOR KIT „ L’ J V->.' ., t« V SELECTION CUIDE FOR FIVI RADIO TRANSISTOR KIT A IVI Output KM 9012 AM RECEIVER w AF Amp- IF 2 IF Conv. SP. KM90J4 KM 9011
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O-92A
9014 ch
transistor npn c 9014
9018 transistor
transistor c 9018
9011 9012 9013 9014 9018
100-10L
9018
transistor 9013 NPN audio output
9011
9012 pnp transistor
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9011 9012 9013 9014 9018
Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
Text: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER
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CL9000
T0-92B
10kfi
9011 9012 9013 9014 9018
9011 NPN transistor
transistor c 9018
npn 9016 transistor
F 9016 transistor
transistor 9014 C npn
C 9014 transistor
9018 transistor
9016 transistor
pnp transistor 9015
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