8fc marking code
Abstract: BC817 BC818 marking 8FC
Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector Emitter Voltage : BC817
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BC817/BC818
OT-23
BC807/BC808
BC817
BC818
8fc marking code
BC817
BC818
marking 8FC
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GSBC817
Abstract: No abstract text available
Text: ISSUED DATE :2005/06/08 REVISED DATE : GSBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The GSBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Package Dimensions REF. A A1 A2 D E HE
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8FC SOT23
Abstract: marking 8FC 8fc marking code BC817 on 8gb transistor sot23 marking 8fc bc818 ic 817 marking 8fb silicon power 8GB
Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Sutable for AF-Driver stages and low power output stages • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Collector Emitter Voltage :BC817
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BC817/BC818
OT-23
BC807/BC808
BC817
BC818
100mA
8FC SOT23
marking 8FC
8fc marking code
BC817
on 8gb transistor
sot23 marking 8fc
bc818
ic 817
marking 8fb
silicon power 8GB
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HBC817
Abstract: hbc8
Text: HI-SINCERITY Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2008.01.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.
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HE6831
HBC817
HBC817
OT-23
183oC
217oC
260oC
10sec
hbc8
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HBC817
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.
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HE6831
HBC817
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8FC SOT23
Abstract: TRANSISTOR 8FB sot23 marking 8fc marking 8FC sot23 marking 8fB Transistor 8fc transistor MARKING my BC81740MTF 8FC+SOT23
Text: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/ BC808 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector
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BC817/BC818
BC817/BC818
BC807/
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OT-23
BC817
BC818
BC817
8FC SOT23
TRANSISTOR 8FB
sot23 marking 8fc
marking 8FC
sot23 marking 8fB
Transistor 8fc
transistor MARKING my
BC81740MTF
8FC+SOT23
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8FC SOT23
Abstract: BC81716MTF TRANSISTOR 8FB BC818 on 8gb transistor BC81740MTF BC807 BC808 BC817 BC81725MTF
Text: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/ BC808 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector
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BC817/BC818
BC807/
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BC818
OT-23
BC817/BC818
8FC SOT23
BC81716MTF
TRANSISTOR 8FB
BC818
on 8gb transistor
BC81740MTF
BC807
BC808
BC817
BC81725MTF
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transistor 8gb sot 23
Abstract: No abstract text available
Text: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/ BC808 3 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector
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BC817/BC818
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transistor 8gb sot 23
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transistor 123 DL
Abstract: TRANSISTOR 8FB a406 transistor A7N transistor
Text: AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power
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AOL1444
AOL1444
DDD50%
transistor 123 DL
TRANSISTOR 8FB
a406 transistor
A7N transistor
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BC817
Abstract: BC818 8FC SOT23
Text: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC807/BC808
OT-23
BC817
BC818
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8FC SOT23
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BC817
Abstract: BC818 marking code fairchild marking 8FC
Text: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC807/BC808
OT-23
BC817
BC818
BC817
BC818
marking code fairchild
marking 8FC
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marking 8FC
Abstract: No abstract text available
Text: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC807/BC808
OT-23
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BC818
OT-23
marking 8FC
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BC817
Abstract: BC818
Text: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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OT-23
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BC818
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msp430 interfacing with buzzer
Abstract: msp430 microcontroller based water level controller circuit 8051 Digital Frequency Meter with LCD Display report
Text: MSP430 Microcontroller Basics This page intentionally left blank MSP430 Microcontroller Basics John H. Davies AMSTERDAM • BOSTON • HEIDELBERG • LONDON NEW YORK • OXFORD • PARIS • SAN DIEGO SAN FRANCISCO • SINGAPORE • SYDNEY • TOKYO Newnes is an imprint of Elsevier
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MSP430
msp430 interfacing with buzzer
msp430 microcontroller based water level controller circuit
8051 Digital Frequency Meter with LCD Display report
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induction cooker schematic diagram
Abstract: SMD DIODE P31A schematic diagram of chinese induction cooker induction cooker fault E1 induction cooker component list on pcb induction cooker schematic diagram E1 error schematic diagram induction cooker p112a IC RTS 993 for electric bell induction cooker circuit diagram
Text: PRODUCT CATALOG & DESIGN GUIDE Protection Thyristor Semiconductor Products Littelfuse Circuit Prot Solutions Port Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop
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EC116
EC2115v1E0812
induction cooker schematic diagram
SMD DIODE P31A
schematic diagram of chinese induction cooker
induction cooker fault E1
induction cooker component list on pcb
induction cooker schematic diagram E1 error
schematic diagram induction cooker
p112a
IC RTS 993 for electric bell
induction cooker circuit diagram
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Untitled
Abstract: No abstract text available
Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector Emitter Voltage
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BC817/BC818
OT-23
BC807/BC808
BC817
BC818
100mA
300mA
500mA,
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KTC4080
Abstract: No abstract text available
Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC4080 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER. VHF BAND AMPLIFIER APPLICATION. FEATURES • Small Reverse Transfer Capacitance : Cre=0.7pF Typ. • Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
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KTC4080
100MHz)
100MHz
KTC4080
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8FC SOT23
Abstract: 8fc marking code on 8gb transistor BC817 sot23 marking 8fc vebo 25 BC818 marking 8fb
Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS Ta= 25°C R ating Symbol C haracteristic Collector Emitter Voltage: BC817
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BC817/BC818
BC807/BC808
OT-23
BC817
BC818
BC830
8FC SOT23
8fc marking code
on 8gb transistor
sot23 marking 8fc
vebo 25
BC818
marking 8fb
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Untitled
Abstract: No abstract text available
Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Unit 50 30 45 25 5 800 310 150 —6 5 ^1 5 0
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BC817/BC818
BC807/BC808
BC817
BC818
300mA
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marking 8fb
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR BC817/BC818 S O T-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC807/BC 808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter V oltage
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BC817/BC818
BC807/BC
BC817
BC818
25product
marking 8fb
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8fc marking code
Abstract: TRANSISTOR 8FB 8FC SOT23 AF MARKING CODE B 817 ic 817 ic 817 b pc 817 BC817 BC818
Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR S O T-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 807/BC 808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter V oltage
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BC817/BC818
BC807/BC808
BC817
BC818
OT-23
100mA
300mA
500mA,
8fc marking code
TRANSISTOR 8FB
8FC SOT23
AF MARKING CODE
B 817
ic 817
ic 817 b
pc 817
BC818
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Untitled
Abstract: No abstract text available
Text: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator BH 1 8FB1WHFV TYPE Fig.1 Plastic Mold Fig. 2 Fig. 3 - 8 Fig.21 PACKAGE BLOCK TEST CIRCUIT APPRI CAT ION CIRCUIT FUTURES # # # # # # # # # Output Voltage Accuracy 1.8V±25mV
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150mA
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SGS M114S
Abstract: M114S TDA 931 PS TDA7284 equivalent TDA2003 equivalent TDA73XX TOKO kacs 10.7MHz fm coil TBA820M equivalent 27mhz remote control transmitter circuit FOR CAR UC3840
Text: AUDIO POWER & PROCESSING ICs DATABOOK 1st EDITION JUNE 1991 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS W ITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics.
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GPR circuit schematic diagram full
Abstract: SIEMENS 3 TB 40 17 - 0B Siemens Halbleiter Siemens HE 8011 siemens b 58 468 la intel 80 Siemens SAB-C501
Text: Contents General Information Summary of Types incl. Ordering Codes 8-Bit Single-Chip Microcontrollers 16-Bit Single-Chip Microcontrollers Application Notes Instruction Set Summary Hexadecimal Order Package Outlines Summary of Types in Alphanumerical Order
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16-Bit
Ausgabe10
MarketingKommu7-49
GPR circuit schematic diagram full
SIEMENS 3 TB 40 17 - 0B
Siemens Halbleiter
Siemens HE 8011
siemens b 58 468 la intel 80
Siemens SAB-C501
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