TRANSISTOR 8050SS Search Results

TRANSISTOR 8050SS Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 8050SS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
8050SST Abstract: 8050SS Text: 8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  General Purpose Switching and Amplification. G H Emitter Collector Base J	Original	PDF	8050SST 8050SST-B 8050SST-C 8050SST-D 18-Feb-2011 100mA 800mA 800mA, 30MHz 8050SST 8050SS
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 8050SS TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z General Purpose Switching and Amplification. 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	PDF	8050SS 100mA 800mA 800mA 30MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8050SS Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol	Original	PDF	8050SS 100mA 800mA 800mA, 30MHZ
8050SS Abstract: datasheet of ic 555 IC 555 8050SS Datasheet datasheet ic 555 transistor 8050ss Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050SS ） TRANSISTOR（ NPN TO—92 FEATURES Power dissipation PCM : 1 W （Tamb=25℃） 1.EMITTER Collector current 2. COLLECTOR ICM: 1.5 A Collector-base voltage V BR CBO : 40	Original	PDF	8050SS O--92 270TYP 050TYP 8050SS datasheet of ic 555 IC 555 8050SS Datasheet datasheet ic 555 transistor 8050ss
Untitled Abstract: No abstract text available Text: TO-92 8050SS Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	8050SS 100mA 800mA 800mA, 30MHZ
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8050SS Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25℃) : 2 W (TC=25℃) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted	Original	PDF	8050SS 100mA 800mA 800mA, 30MHZ
8050SS Abstract: transistor 8050ss 8050SS Datasheet 8050ss TRANSISTOR equivalent 8050S 8050ss TRANSISTOR Text: 8050SS 8050SS TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1 1. EMITTER W (Tamb=25 ) Collector current ICM: 2. COLLECTOR 1.5 A 3. BASE Collector-base voltage V(BR)CBO: 40 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	Original	PDF	8050SS 800mA, 8050SS transistor 8050ss 8050SS Datasheet 8050ss TRANSISTOR equivalent 8050S 8050ss TRANSISTOR
8050SS Abstract: transistor 8050ss 8050SSD Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.	Original	PDF	8050SS-C 8050SS-D -55OC 8050SS 100uAdc, transistor 8050ss 8050SSD
8050SS Abstract: 8050SSD transistor 8050ss Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.	Original	PDF	8050SS-C 8050SS-D -55OC 8050SS 100uAdc, 8050SSD transistor 8050ss
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.	Original	PDF	8050SS-C 8050SS-D -55OC 8050SS
8050SS Abstract: No abstract text available Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.	Original	PDF	8050SS-C 8050SS-D -55OC 8050SS 100uAdc,
8050SS Abstract: No abstract text available Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.	Original	PDF	8050SS-C 8050SS-D -55OC 8050SS
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.	Original	PDF	8050SS-C 8050SS-D -55OC 8050SS
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	PDF	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

secos gmbh Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers	Original	PDF	SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
secos gmbh Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3	Original	PDF	SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA