8778401
Abstract: 8001601 HI-0201 8GHz transceiver specification MD-80 MD80C88/883 JM38510 HS 3182 HS 3282 MD82c82
Text: Military ICs 12 DIGITAL/MILITARY/SPACE PRODUCT TREES ANALOG Selection Guides Defense Selection Chart Analog Signal Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 Arrays, Transistor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
|
Original
|
PDF
|
MIL-PRF-38535
1-888-INTERSIL
8778401
8001601
HI-0201
8GHz transceiver specification
MD-80
MD80C88/883
JM38510
HS 3182
HS 3282
MD82c82
|
nec 7800
Abstract: D1880 NP90N055PDH NP90N055NDH NP90N055MDH 90N055 MP-25ZP
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N055MDH, NP90N055NDH, NP90N055PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N055MDH, NP90N055NDH, NP90N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.
|
Original
|
PDF
|
NP90N055MDH,
NP90N055NDH,
NP90N055PDH
NP90N055PDH
NP90N055MDH-S18-AY
NP90N055NDH-S18-AY
NP90N055PDH-E1-AY
NP90N055PDH-E2-AY
nec 7800
D1880
NP90N055NDH
NP90N055MDH
90N055
MP-25ZP
|
Untitled
Abstract: No abstract text available
Text: Type IPB014N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level 1 • Qualified according to JEDEC for target applications
|
Original
|
PDF
|
IPB014N06N
IEC61249-2-21
O263-7
014N06N
|
PG-TO262-3
Abstract: No abstract text available
Text: Type IPI020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications
|
Original
|
PDF
|
IPI020N06N
IEC61249-2-21
PG-TO262-3
020N06N
50K/W
PG-TO262-3
|
Untitled
Abstract: No abstract text available
Text: Type IPP020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications
|
Original
|
PDF
|
IPP020N06N
IEC61249-2-21
PG-TO220-3
020N06N
|
D 1062 transistor
Abstract: HVM-1062
Text: CONFIDENTIAL MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.0 Approved by H. Yamaguchi : Jul. 2010 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY
|
Original
|
PDF
|
CM800HG-90R
HVM-1062
D 1062 transistor
HVM-1062
|
CMPA2560025F
Abstract: 920pF
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
|
Original
|
PDF
|
CMPA2560025F
CMPA2560025F
CMPA25
60025F
920pF
|
Untitled
Abstract: No abstract text available
Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
|
Original
|
PDF
|
CMPA2560025D
CMP2560025D
CMPA25
CMPA2560025D
|
CMPA2560025F
Abstract: CMPA2560025F-TB c08bl242x
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
|
Original
|
PDF
|
CMPA2560025F
CMPA2560025F
CMPA25
60025Fs
CMPA2560025F-TB
c08bl242x
|
CMPA2735075F
Abstract: IDQ Freq Products RF-35-0100-CH
Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
|
Original
|
PDF
|
CMPA2735075F
CMPA2735075F
CMPA27
35075F
78001SA
IDQ Freq Products
RF-35-0100-CH
|
Untitled
Abstract: No abstract text available
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
|
Original
|
PDF
|
CMPA2560025F
CMPA2560025F
CMPA25
6002ree
|
CMPA2560025F
Abstract: CMPA2560025F-TB
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
|
Original
|
PDF
|
CMPA2560025F
CMPA2560025F
CMPA25
60025Fs
CMPA2560025F-TB
|
CMPA2560025F
Abstract: CMPA2560025F-TB JESD22 A114D
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
|
Original
|
PDF
|
CMPA2560025F
CMPA2560025F
CMPA25
60025F
CMPA2560025F-TB
JESD22
A114D
|
Untitled
Abstract: No abstract text available
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
|
Original
|
PDF
|
CMPA2560025F
CMPA2560025F
CMPA25
60025F
|
|
|
Untitled
Abstract: No abstract text available
Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
|
Original
|
PDF
|
CMPA2735075F
CMPA2735075F
CMPA27
35075F
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
PDF
|
|
A7800
Abstract: 34G3S ic 7800 kf 1300
Text: FZ 1200 R 16 KF 1 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,016 RthCK pro Baustein / per module 0,008 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values
|
OCR Scan
|
PDF
|
G0Q2G25
A7800
34G3S
ic 7800
kf 1300
|
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
|
OCR Scan
|
PDF
|
500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
|
A 7800
Abstract: a7800
Text: FZ 1200 R 12 KF 1 Transistor Thermische Eigenschaften Transistor Rthjc Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 1200 A Ic Thermal properties DC, pro B a u ste in /p e r m odule 0,016 °C/W pro Baustein / per module 0,008 °C/W
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: FZ 1200 R 12 KF 1 Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 1200 A 0,008 °C/W pro Baustein / per module
|
OCR Scan
|
PDF
|
4032T7
Q00ED23
|
Untitled
Abstract: No abstract text available
Text: FZ 1200 R 12 KF 1 Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 1200 A 0,008 °C/W pro Baustein / per module
|
OCR Scan
|
PDF
|
4032T7
000ED23
|
A 7800
Abstract: a7800
Text: FZ 1200 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Elektrische Eigenschaften Electrical properties H öchstzulässige W erte V ces Maximum rated values RthCK pro B a u ste in /p e r module
|
OCR Scan
|
PDF
|
00Q2D25
A 7800
a7800
|
A7800
Abstract: a 7800
Text: FZ 1200 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Elektrische Eigenschaften Electrical properties H öchstzulässige W erte V ces Maximum rated values RthCK pro B a u ste in /p e r module
|
OCR Scan
|
PDF
|
34032T7
00Q2D25
A7800
a 7800
|
MG50Q1BS1
Abstract: No abstract text available
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG50Q1BS1 Unit in mm High Power Switching Applications Motor Control Applications • High Input Impedance • High Speed: tf = 0.5jxs Max. • Low Saturation Voltage : VCE(sat) = 4.0V (Max.) • Enhancement-Mode
|
OCR Scan
|
PDF
|
MG50Q1BS1
PW04150796
MG50Q1BS1
|
