HBC556
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6422 Issued Date : 1992.11.25 Revised Date : 2001.06.15 Page No. : 1/3 HBC556 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC556 is primarily intended for use in driver stage of audio amplifiers. Features
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HE6422
HBC556
HBC556
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transistor BC 336
Abstract: HBC556 transistor BC 245
Text: HI-SINCERITY Spec. No. : HE6422 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No. : 1/4 MICROELECTRONICS CORP. HBC556 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC556 is primarily intended for use in driver stage of audio amplifiers. TO-92
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HE6422
HBC556
HBC556
183oC
217oC
260oC
transistor BC 336
transistor BC 245
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TT2142
Abstract: transistor TT2142 7550-1 100mA transistor 7550-1 tt2142 circuit diagram tt2142 datasheet Transistor Equivalent TT2142 transistor ""tt2142 ENN7550 I-B09A
Text: Ordering number : ENN7550 TT2142 NPN Triple Diffused Planar Silicon Transistor TT2142 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process). Adoption of MBIT process.
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ENN7550
TT2142
TT2142]
TT2142
transistor TT2142
7550-1 100mA
transistor 7550-1
tt2142 circuit diagram
tt2142 datasheet
Transistor Equivalent TT2142
transistor ""tt2142
ENN7550
I-B09A
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Untitled
Abstract: No abstract text available
Text: MFA350 Series • Screw Terminals Available • U Channel & Cover Fan Formats • High Power Density 11.1 W/in3 • 5 V Standby & 12 V Fan Outputs • Active Current Share • Remote On/Off • AC & DC OK Signals • 10 º C to +70 º C Operation • Level B Conducted Emissions
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MFA350
element14
05-Oct-11
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SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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734TL
UWEB-MODEM-34
HCS412/WM
TLV320AIC10IPFB
100MB
NEON250
GA-60XM7E
BLK32X40
BLK32X42
SKIIP 33 nec 125 t2
skiip 613 gb 123 ct
RBS 6302 ericsson
SKIIP 513 gb 173 ct
THERMISTOR ml TDK 150M
pioneer PAL 010a
Project Report of smoke alarm using IC 555 doc
SKiip 83 EC 125 T1
ericsson RBS 6000 series INSTALLATION MANUAL
Ericsson Installation guide for RBS 6302
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Untitled
Abstract: No abstract text available
Text: GaAs IRED a PHOTO-TRANSISTOR TLP731,732 OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead
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TLP731
TLP732
BS415
BS7002
EN60950)
UL1577,
E67349
TLP731
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Untitled
Abstract: No abstract text available
Text: TLP630 GaAs IRED & PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS Unit in mm AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel in a six lead plastic DIP
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TLP630
TLP630
5000Vrms
E67349
Cn72S[
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dg1u
Abstract: TLP624
Text: TLP624,-2,-4 GaAs IRED a PHOTO-TRANSISTOR TLP6 24 PRO G RAM M ABLE CONTROLLERS AC /DC-INPUT M ODULE TELECOM M UNICATIO N The TOSHIBA TLP624, -2 and -4 consist of a gallium arsenide infrared emitting diode optically coupled to a photo-transistor. The TLP624-2 offers two isolated channels in an eight lead plastic
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TLP624
TLP624,
TLP624-2
TLP624-4
5000Vrms
fr39dll
FLP624_
fr39dU
dg1u
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Untitled
Abstract: No abstract text available
Text: OB PLESSËY SEMICOND/DISCRETË DE I 7550533 000t70B t, 3£ ~ NPN silicon planar general purpose switching transistor //' FM M T4124 ABSOLUTE MAXIMUM RATINGS Parameter Collector-Base Voltage Collector-Emltter Voltage Symbol Value 30 V cbo 25 V ceo V ebo •c
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000t70B
T4124
MT4124
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Untitled
Abstract: No abstract text available
Text: TOSHIBA ^7550 0023574 553 TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE L2-7r-M0SM 2SK940 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, M OTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. • • • • • 2SK940 INDUSTRIAL APPLICATIONS U nit in mm
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2SK940
O-220SM
Q0E3b44
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SII -5 2 S K 1 357 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER A N D M OTOR DRIVE APPLICATIONS. • • • • 2SK1357 ^0^7550 00232flb 275 INDUSTRIAL APPLICATIONS
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2SK1357
00232flb
20kfi)
0023b43
O-220SM
Q023b44
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2N914
Abstract: transistor 2N914
Text: Nicht für Neuentwicklungen Not for new developm ents 2 N 914 'W Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxiai Planar Switching Transistor Anwendungen: Schnelle Schalter Applications: Fast switches Abmessungen in mm Dimensions in mm
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2N914
2N914
transistor 2N914
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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transistor E 13009
Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4I26
2N4400
2N4401
transistor E 13009
transistor d 13009
E 13009
13007 m
13007 2 transistor
13009 PNP Transistor
jE 13007
transistor E 13007
p 13009
transistor j 13009
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2SJ123
Abstract: 251C 2SK442
Text: TO S H I B A { D I S C R E T E / O P T O } 9097250 TOSHIBA ¿/oiiiih Tí CDIS C R E T E / O P T O SEMICONDUCTOR DE I T CH 7550 D D l t b B S □ 99D 16635 D TOSHIBA FIELD EFFECT TRANSISTOR 2 S J 1 2 3 SILICON P CHANNEL MOS TYPE TECHNICAL DATA HIGH SPEED SWITCHING APPLICATION.
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TCH7550
2SK442.
2SJ123
251C
2SK442
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Untitled
Abstract: No abstract text available
Text: D E | cI0c17ES0 □ Dlbût.M 3 | TOSHIBA {DI SC RE TE /O PT O} 9097250 TOSHIBA <DISCRETE/OPTO> ¿Toshibt 99D 16864 D T-39- 11 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 6 2"2 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ff-MOSÏÏ INDUSTRIAL APPLICATIONS
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cI0c17ES0
500nA
250uA
250yA
00A/us
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DIS CR ETE/O PT O} TT 9097250 TOSHIBA CDISCRETE/OPTO ¿Tashihi d F I t d t TSSO 990 16647 D O l b ^ ? DT-S^-ß TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 3 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE 7T— M O S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS
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0-12fKTyp.
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SL3127C
Abstract: L3127C
Text: 12 E &PLESSEY 0 | PLESSEY 7 5 20 5 13 G0G7Ô37 a | SEMICONDUCTORS Semiconductors T SL3127C HIGH FREQUENCY NPN TRANSISTOR ARRAY T h e S L3127C is a monolithic array of five high frequency low current N P N transistors in a 16 lead D IL package. The transistors exhibit typical fTs of 1.6G H z and w ideband noise
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SL3127C
L3127C
SL3127C
A3127.
SL3127
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ZN424
Abstract: ADC tracking 8 bit up down counter tracking -ADC
Text: PLESSEY SEMICONDUCTORS 12E D | 7550S13 000042^ 3 ZN525D/E/J 8-BIT MULTIFUNCTION DATA CONVERTER The ZN525 is a versatile, multifunction 8-bit data conversion system. A voltage-output DAC, 8-bit up/down counter, stable 2.5V bandgap reference and clock generator
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7550S13
ZN525D/E/J
ZN525
800ns
ZN525
ZN424
ADC tracking
8 bit up down counter
tracking -ADC
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Untitled
Abstract: No abstract text available
Text: PLESSEY SEMICOND/DISCRETE I : 35 Dlf| 7550533 00017bS 3 j P L E S S E Y S E M I C O N D /D I S C R E T E 7220533 i 32C 0 1 7 6 5 2g ^-1 D CORE DRIVERS TA B LE 9 NPN SILICON PLANAR HIGH S P EED C O R E D RIVER TR A N SIST O R S The devices shown in this table are designed for use in fast, medium and high voltage, high
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00017bS
BD320A
BD320B
BD320C
BD321A
BD321B
B0321C
BD322A
BD322B
BD322C
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MG75G2cl1 toshiba
Abstract: MG75G2CL1
Text: TOSHIBA {DISCRETE/OPTO} TO .DE | ^0^7550 DDlbE37 T 90D 16237 9097250 TOSHIBA DISCRETE/OPTO • SEMICONDUCTOR , MG75G1JL1 MG75G2CL1 MG75G2DL1 TECHNICAL DATA MG75G1JL1 Weight : 205g MG75G2CL1 El C3 MG75G2DL1 Height : 245g ST 1 A 2 A TOSHIBA CORPORATION - 243 -
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DDlbE37
MG75G1JL1
MG75G2CL1
MG75G2DL1
DT-33
MG75G2cl1 toshiba
MG75G2CL1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTOÜ9097250 TOSHIBA TOSHIBA TO DE | T E H 7550 ODlbObS 0 | DT-33-3 S 90D 16062 DISCRETE/OPTO SEM ICO N D U CTO R TOSHIBA GTR MODULE M G 2 5 N 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE H I G H P OWER S W I T C H I N G APPLICATIONS.
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DT-33-3
33RENT
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ica 700 Y
Abstract: transistor 16299
Text: TOSHIBA -CDISCRETE/OPTOÏ 9097250 TOSHIBA TO SH IBA TD DISCRETE/OPTO 1)1 ^ 0^7550 OOlbETt 3 DT-3 3 - 3 5 90D 16296 SEMICONDUCTOR TOSHIBA GTR MODULE TECHNICAL DATA MG400H1F L 1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG400H1F
ica 700 Y
transistor 16299
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SPX33
Abstract: transistor 7150 SPX53 LC 7130 4N26 Photodiode transistor 7550 4n33 4n35 04 transistor transistor lf SPX7273
Text: Optically Coupled Isolators 6 Pin Dual-in-Line UL RECOGNIZED TO 3500 VAC — FILE E58979 'Type Current transfer ratio At specified forward1 current (lF) and Vce CTR(%) min. max. lF(ma) VCE(volts) Input to output isolation voltage Collector breakdown <lc = 100 ì*A)
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E58979
VCE-10V)
SPX26
SPX33
SPX53
6N138,
6N139
6N135,
6N136
transistor 7150
LC 7130
4N26 Photodiode
transistor 7550
4n33 4n35
04 transistor
transistor lf
SPX7273
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