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    TRANSISTOR 7550 Search Results

    TRANSISTOR 7550 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 7550 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HBC556

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6422 Issued Date : 1992.11.25 Revised Date : 2001.06.15 Page No. : 1/3 HBC556 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC556 is primarily intended for use in driver stage of audio amplifiers. Features


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    PDF HE6422 HBC556 HBC556

    transistor BC 336

    Abstract: HBC556 transistor BC 245
    Text: HI-SINCERITY Spec. No. : HE6422 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No. : 1/4 MICROELECTRONICS CORP. HBC556 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC556 is primarily intended for use in driver stage of audio amplifiers. TO-92


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    PDF HE6422 HBC556 HBC556 183oC 217oC 260oC transistor BC 336 transistor BC 245

    TT2142

    Abstract: transistor TT2142 7550-1 100mA transistor 7550-1 tt2142 circuit diagram tt2142 datasheet Transistor Equivalent TT2142 transistor ""tt2142 ENN7550 I-B09A
    Text: Ordering number : ENN7550 TT2142 NPN Triple Diffused Planar Silicon Transistor TT2142 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process). Adoption of MBIT process.


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    PDF ENN7550 TT2142 TT2142] TT2142 transistor TT2142 7550-1 100mA transistor 7550-1 tt2142 circuit diagram tt2142 datasheet Transistor Equivalent TT2142 transistor ""tt2142 ENN7550 I-B09A

    Untitled

    Abstract: No abstract text available
    Text: MFA350 Series • Screw Terminals Available • U Channel & Cover Fan Formats • High Power Density 11.1 W/in3 • 5 V Standby & 12 V Fan Outputs • Active Current Share • Remote On/Off • AC & DC OK Signals • 10 º C to +70 º C Operation • Level B Conducted Emissions


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    PDF MFA350 element14 05-Oct-11

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    Untitled

    Abstract: No abstract text available
    Text: GaAs IRED a PHOTO-TRANSISTOR TLP731,732 OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead


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    PDF TLP731 TLP732 BS415 BS7002 EN60950) UL1577, E67349 TLP731

    Untitled

    Abstract: No abstract text available
    Text: TLP630 GaAs IRED & PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS Unit in mm AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo­ transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel in a six lead plastic DIP


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    PDF TLP630 TLP630 5000Vrms E67349 Cn72S[

    dg1u

    Abstract: TLP624
    Text: TLP624,-2,-4 GaAs IRED a PHOTO-TRANSISTOR TLP6 24 PRO G RAM M ABLE CONTROLLERS AC /DC-INPUT M ODULE TELECOM M UNICATIO N The TOSHIBA TLP624, -2 and -4 consist of a gallium arsenide infrared emitting diode optically coupled to a photo-transistor. The TLP624-2 offers two isolated channels in an eight lead plastic


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    PDF TLP624 TLP624, TLP624-2 TLP624-4 5000Vrms fr39dll FLP624_ fr39dU dg1u

    Untitled

    Abstract: No abstract text available
    Text: OB PLESSËY SEMICOND/DISCRETË DE I 7550533 000t70B t, 3£ ~ NPN silicon planar general purpose switching transistor //' FM M T4124 ABSOLUTE MAXIMUM RATINGS Parameter Collector-Base Voltage Collector-Emltter Voltage Symbol Value 30 V cbo 25 V ceo V ebo •c


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    PDF 000t70B T4124 MT4124

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ^7550 0023574 553 TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE L2-7r-M0SM 2SK940 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, M OTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. • • • • • 2SK940 INDUSTRIAL APPLICATIONS U nit in mm


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    PDF 2SK940 O-220SM Q0E3b44

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SII -5 2 S K 1 357 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER A N D M OTOR DRIVE APPLICATIONS. • • • • 2SK1357 ^0^7550 00232flb 275 INDUSTRIAL APPLICATIONS


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    PDF 2SK1357 00232flb 20kfi) 0023b43 O-220SM Q023b44

    2N914

    Abstract: transistor 2N914
    Text: Nicht für Neuentwicklungen Not for new developm ents 2 N 914 'W Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxiai Planar Switching Transistor Anwendungen: Schnelle Schalter Applications: Fast switches Abmessungen in mm Dimensions in mm


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    PDF 2N914 2N914 transistor 2N914

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    transistor E 13009

    Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
    Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009

    2SJ123

    Abstract: 251C 2SK442
    Text: TO S H I B A { D I S C R E T E / O P T O } 9097250 TOSHIBA ¿/oiiiih Tí CDIS C R E T E / O P T O SEMICONDUCTOR DE I T CH 7550 D D l t b B S □ 99D 16635 D TOSHIBA FIELD EFFECT TRANSISTOR 2 S J 1 2 3 SILICON P CHANNEL MOS TYPE TECHNICAL DATA HIGH SPEED SWITCHING APPLICATION.


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    PDF TCH7550 2SK442. 2SJ123 251C 2SK442

    Untitled

    Abstract: No abstract text available
    Text: D E | cI0c17ES0 □ Dlbût.M 3 | TOSHIBA {DI SC RE TE /O PT O} 9097250 TOSHIBA <DISCRETE/OPTO> ¿Toshibt 99D 16864 D T-39- 11 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 6 2"2 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ff-MOSÏÏ INDUSTRIAL APPLICATIONS


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    PDF cI0c17ES0 500nA 250uA 250yA 00A/us

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DIS CR ETE/O PT O} TT 9097250 TOSHIBA CDISCRETE/OPTO ¿Tashihi d F I t d t TSSO 990 16647 D O l b ^ ? DT-S^-ß TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 3 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE 7T— M O S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS


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    PDF 0-12fKTyp.

    SL3127C

    Abstract: L3127C
    Text: 12 E &PLESSEY 0 | PLESSEY 7 5 20 5 13 G0G7Ô37 a | SEMICONDUCTORS Semiconductors T SL3127C HIGH FREQUENCY NPN TRANSISTOR ARRAY T h e S L3127C is a monolithic array of five high frequency low current N P N transistors in a 16 lead D IL package. The transistors exhibit typical fTs of 1.6G H z and w ideband noise


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    PDF SL3127C L3127C SL3127C A3127. SL3127

    ZN424

    Abstract: ADC tracking 8 bit up down counter tracking -ADC
    Text: PLESSEY SEMICONDUCTORS 12E D | 7550S13 000042^ 3 ZN525D/E/J 8-BIT MULTIFUNCTION DATA CONVERTER The ZN525 is a versatile, multifunction 8-bit data conversion system. A voltage-output DAC, 8-bit up/down counter, stable 2.5V bandgap reference and clock generator


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    PDF 7550S13 ZN525D/E/J ZN525 800ns ZN525 ZN424 ADC tracking 8 bit up down counter tracking -ADC

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEMICOND/DISCRETE I : 35 Dlf| 7550533 00017bS 3 j P L E S S E Y S E M I C O N D /D I S C R E T E 7220533 i 32C 0 1 7 6 5 2g ^-1 D CORE DRIVERS TA B LE 9 NPN SILICON PLANAR HIGH S P EED C O R E D RIVER TR A N SIST O R S The devices shown in this table are designed for use in fast, medium and high voltage, high


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    PDF 00017bS BD320A BD320B BD320C BD321A BD321B B0321C BD322A BD322B BD322C

    MG75G2cl1 toshiba

    Abstract: MG75G2CL1
    Text: TOSHIBA {DISCRETE/OPTO} TO .DE | ^0^7550 DDlbE37 T 90D 16237 9097250 TOSHIBA DISCRETE/OPTO • SEMICONDUCTOR , MG75G1JL1 MG75G2CL1 MG75G2DL1 TECHNICAL DATA MG75G1JL1 Weight : 205g MG75G2CL1 El C3 MG75G2DL1 Height : 245g ST 1 A 2 A TOSHIBA CORPORATION - 243 -


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    PDF DDlbE37 MG75G1JL1 MG75G2CL1 MG75G2DL1 DT-33 MG75G2cl1 toshiba MG75G2CL1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOÜ9097250 TOSHIBA TOSHIBA TO DE | T E H 7550 ODlbObS 0 | DT-33-3 S 90D 16062 DISCRETE/OPTO SEM ICO N D U CTO R TOSHIBA GTR MODULE M G 2 5 N 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE H I G H P OWER S W I T C H I N G APPLICATIONS.


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    PDF DT-33-3 33RENT

    ica 700 Y

    Abstract: transistor 16299
    Text: TOSHIBA -CDISCRETE/OPTOÏ 9097250 TOSHIBA TO SH IBA TD DISCRETE/OPTO 1)1 ^ 0^7550 OOlbETt 3 DT-3 3 - 3 5 90D 16296 SEMICONDUCTOR TOSHIBA GTR MODULE TECHNICAL DATA MG400H1F L 1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    PDF MG400H1F ica 700 Y transistor 16299

    SPX33

    Abstract: transistor 7150 SPX53 LC 7130 4N26 Photodiode transistor 7550 4n33 4n35 04 transistor transistor lf SPX7273
    Text: Optically Coupled Isolators 6 Pin Dual-in-Line UL RECOGNIZED TO 3500 VAC — FILE E58979 'Type Current transfer ratio At specified forward1 current (lF) and Vce CTR(%) min. max. lF(ma) VCE(volts) Input to output isolation voltage Collector breakdown <lc = 100 ì*A)


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    PDF E58979 VCE-10V) SPX26 SPX33 SPX53 6N138, 6N139 6N135, 6N136 transistor 7150 LC 7130 4N26 Photodiode transistor 7550 4n33 4n35 04 transistor transistor lf SPX7273