Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 724 Search Results

    TRANSISTOR 724 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 724 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBT2907A

    Abstract: Application of MMBT2907A MMBT2907 MMBT2907 ON MMBT2222 MMBT2222A
    Text: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.


    Original     		PDF MMBT2907 MMBT2907A MMBT2222 MMBT2222A OT-23 MMBT2907A Application of MMBT2907A MMBT2907 ON

    MMBT2907

    Abstract: MMBT2222 MMBT2222A MMBT2907A
    Text: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.


    Original     		PDF MMBT2907 MMBT2907A MMBT2222 MMBT2222A OT-23 MMBT2907 MMBT2907A

    MMBT2907

    Abstract: MMBT2907A MMBT2907 ON MMBT2222 MMBT2222A
    Text: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.


    Original     		PDF MMBT2907 MMBT2907A MMBT2222 MMBT2222A OT-23 MMBT2907 150mA, 500mA, 100MHz MMBT2907A MMBT2907 ON

    MMBT2222ATL1

    Abstract: MMBT2907ATL1 MMBT2907ALT1 MMBT2222LT1 MMBT2907LT1 hFE is transistor MMBT2907LT
    Text: MMBT2907LT1 / MMBT2907ALT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222LT1 and MMBT2222ATL1 are recommended.


    Original     		PDF MMBT2907LT1 MMBT2907ALT1 MMBT2222LT1 MMBT2222ATL1 OT-23 MMBT2907ATL1 150mA, 500mA, 100MHz MMBT2907ATL1 MMBT2907ALT1 hFE is transistor MMBT2907LT

    MMBT2222ATL1

    Abstract: MMBT2907ALT1 MMBT2222LT1 MMBT2907ATL1 MMBT2907LT1
    Text: MMBT2907LT1 / MMBT2907ALT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222LT1 and MMBT2222ATL1 are recommended.


    Original     		PDF MMBT2907LT1 MMBT2907ALT1 MMBT2222LT1 MMBT2222ATL1 OT-23 MMBT2907ATL1 150mA, 500mA, 100MHz MMBT2907ALT1 MMBT2907ATL1

    MMBTSA1015

    Abstract: No abstract text available
    Text: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended.


    Original     		PDF MMBTSA1015LT1 MMBTSC1815LT1 OT-23 150mA 100mA, 100Hz, MMBTSA1015

    ca3083

    Abstract: CA3096 MM9710 pspice high frequency transistor bjt transistor pnp PSpice TR MJE 350 333E 110E NPN PNP Transistor Arrays
    Text: CA3096 and CA3083 Transistor Array SPICE Models July 1997 MM9710 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3096, and the CA3083 High Frequency NPN/PNP Transistor Arrays.


    Original     		PDF CA3096 CA3083 MM9710 CA3096, MM9710 pspice high frequency transistor bjt transistor pnp PSpice TR MJE 350 333E 110E NPN PNP Transistor Arrays

    MMBTSA1015

    Abstract: No abstract text available
    Text: MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended.


    Original     		PDF MMBTSA1015 MMBTSC1815 OT-23 150mA 100mA, 100Hz, MMBTSA1015

    hFE-200 transistor PNP

    Abstract: No abstract text available
    Text: MMBTSA1162 PNP Silicon Epitaxial Planar Transistor for AF general purpose amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC2712 is recommended.


    Original     		PDF MMBTSA1162 MMBTSC2712 OT-23 100mA, 100Hz, hFE-200 transistor PNP

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1162 PNP Silicon Epitaxial Planar Transistor for AF general purpose amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC2712 is recommended.


    Original     		PDF MMBTSA1162 MMBTSC2712 OT-23 100mA, 100Hz,

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended.


    Original     		PDF MMBTSA1015LT1 MMBTSC1815LT1 OT-23 150mA 100mA, 100Hz,

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended.


    Original     		PDF MMBTSA1015 MMBTSC1815 OT-23 150mA 100mA, 100Hz,

    Untitled

    Abstract: No abstract text available
    Text: MMBTSC1815LT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015LT1 is recommended.


    Original     		PDF MMBTSC1815LT1 MMBTSA1015LT1 OT-23 150mA 100mA,

    2sa1048 transistor

    Abstract: transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SC2458 2SA104
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


    Original     		PDF 2SA1048 2SC2458 100mA, 2sa1048 transistor transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SA104

    Untitled

    Abstract: No abstract text available
    Text: MMBTSC1815LT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015LT1 is recommended.


    Original     		PDF MMBTSC1815LT1 MMBTSA1015LT1 OT-23 150mA 100mA,

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended.


    Original     		PDF MMBTSA1015 MMBTSC1815 OT-23

    Untitled

    Abstract: No abstract text available
    Text: MMBTSB1198KLT1 PNP Silicon Epitaxial Planar Transistor Low-frequency Transistor -80V, -0.5A The transistor is subdivided into two groups Q and R, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol Value


    Original     		PDF MMBTSB1198KLT1 OT-23 -50mA 100MHz

    2SC2458

    Abstract: 2sc2458 equivalent 2SA1048
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


    Original     		PDF 2SA1048 2SC2458 100mA, 2sc2458 equivalent 2SA1048

    2sa1048 transistor

    Abstract: 2sc2458 equivalent 2SA1048 2SC2458
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


    Original     		PDF 2SA1048 2SC2458 100mA, 2sa1048 transistor 2sc2458 equivalent 2SA1048

    Untitled

    Abstract: No abstract text available
    Text: MMBTSB1198KLT1 PNP Silicon Epitaxial Planar Transistor Low-frequency Transistor -80V, -0.5A The transistor is subdivided into two groups Q and R, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol Value


    Original     		PDF MMBTSB1198KLT1 OT-23 -50mA 100MHz

    NPN Silicon Epitaxial Planar Transistor

    Abstract: No abstract text available
    Text: MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended.


    Original     		PDF MMBTSC1815 MMBTSA1015 OT-23 10Kat 150mA NPN Silicon Epitaxial Planar Transistor

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    equivalent bd439

    Abstract: D0344 b0721 B0719 BD725 B0720 BD439 BD721 BD719 BD720
    Text: BD719 BD721 BD723 BD725 I SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SOT32 plastic envelope intended fo r use in audio output and general purpose amplifier applications. BD719 is equivalent to BD439. PNP complements are BD720; 722; 724 and


    OCR Scan     		PDF BD719 BD721 BD723 BD725 BD439. BD720; BD726. BD721 equivalent bd439 D0344 b0721 B0719 BD725 B0720 BD439 BD720

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic


    OCR Scan     		PDF bbS3R31 002fl37b BU2520D bbS3T31