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    TRANSISTOR 6BS Search Results

    TRANSISTOR 6BS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 6BS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    egs SOT23

    Abstract: BC817K-40 thermal resistance
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


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    PDF BC817. BC818. BC807. BC808. BC817-16 BC817K-16* BC817-25 BC817K-25* BC817-25W BC817K-25W* egs SOT23 BC817K-40 thermal resistance

    6CS transistor

    Abstract: transistor 6cs
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


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    PDF BC817. BC818. BC807. BC808. BC817-16 BC817-25 BC817-25W BC817-40 BC817-40W BC818-16W 6CS transistor transistor 6cs

    transistor 6cs

    Abstract: 6CS transistor 6as sot23 marking 6CS BC808 BC817 6bs transistor BC817-25 BC817-25W BC817K-16
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


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    PDF BC817. BC818. BC807. BC808. BC817-16 BC817K-16* BC817-25 BC817K-25* BC817-25W OT323 transistor 6cs 6CS transistor 6as sot23 marking 6CS BC808 BC817 6bs transistor BC817-25 BC817-25W BC817K-16

    bc817

    Abstract: No abstract text available
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


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    PDF BC817. BC818. BC807. BC808. BC817-16 BC817-25 BC817-25W OT323 BC817-40 BC817-40W bc817

    C2320

    Abstract: Q62702-C2320 BC 170 transistor TRANSISTOR c2324 transistor 6cs ic 817 transistor 6bs 6CS transistor transistor bc icbo nA npn Q62702-C2278
    Text: BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration Package


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    PDF 17-16W BC807W, BC808W Q62702-C2320 OT-323 17-25W Q62702-C2278 17-40W C2320 Q62702-C2320 BC 170 transistor TRANSISTOR c2324 transistor 6cs ic 817 transistor 6bs 6CS transistor transistor bc icbo nA npn Q62702-C2278

    1B marking transistor marking 6Bs

    Abstract: BC817W SOT23 6fs sot23 105BC transistor 6bs marking 6bs
    Text: BC817./BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP • Pb-free (RoHS compliant) package 1)


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    PDF BC817. /BC818. BC807. BC808. BC817-16 BC817K-16* BC817-25 BC817K-25* BC817-25W BC817K-25W* 1B marking transistor marking 6Bs BC817W SOT23 6fs sot23 105BC transistor 6bs marking 6bs

    6as sot23

    Abstract: marking 6bs 1B marking transistor marking 6Bs BC817K-40W
    Text: BC817K./BC818K. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Pb-free RoHS compliant package • Qualified according AEC Q101 Type Marking Pin Configuration


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    PDF BC817K. /BC818K. BC817K-16 BC817K-16W BC817K-25 BC817K-25W BC817K-40 BC817K-40W BC818K-16W BC818K-40 6as sot23 marking 6bs 1B marking transistor marking 6Bs

    transistor 6cs

    Abstract: 6CS transistor BC817 BC818K-40 ic 817 1B marking transistor marking 6Bs MARKING 6Cs SOT23 6bs transistor BC817 INFINEON BC808
    Text: BC817./BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP • Pb-free (RoHS compliant) package 1)


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    PDF BC817. /BC818. BC807. BC808. BC817-16 BC817K-16* BC817-25 BC817K-25* BC817-25W OT323 transistor 6cs 6CS transistor BC817 BC818K-40 ic 817 1B marking transistor marking 6Bs MARKING 6Cs SOT23 6bs transistor BC817 INFINEON BC808

    817-U

    Abstract: 6Bs transistor
    Text: BC 817U NPN Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197


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    PDF VPW09197 EHA07178 SC-74 EHP00223 EHP00222 EHP00224 EHP00218 Apr-22-1999 817-U 6Bs transistor

    marking 6bs

    Abstract: ic 817 EHP00223 BC817U SC74
    Text: BC817U NPN Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2


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    PDF BC817U VPW09197 EHA07178 IBM10 EHP00223 EHP00222 EHP00224 EHP00218 Nov-29-2001 marking 6bs ic 817 EHP00223 BC817U SC74

    Untitled

    Abstract: No abstract text available
    Text: BC817U NPN Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2


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    PDF BC817U VPW09197 EHA07178

    marking 6bs

    Abstract: ic 817 BC817U SC74
    Text: BC817U NPN Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2


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    PDF BC817U VPW09197 EHA07178 IBM10 EHP00223 EHP00222 EHP00224 EHP00218 Aug-28-2001 marking 6bs ic 817 BC817U SC74

    Untitled

    Abstract: No abstract text available
    Text: BC817U NPN Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2


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    PDF BC817U VPW09197 EHA07178

    marking 6bs

    Abstract: No abstract text available
    Text: BC817U NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-saturation voltage 1 • Two galvanic internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package


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    PDF BC817U EHA07178 marking 6bs

    Untitled

    Abstract: No abstract text available
    Text: BC817U NPN Silicon AF Transistor Array • For AF stages and driver applications • High current gain 4 3 5 2 6 • Low collector-saturation voltage 1 • Two galvanic internal isolated transistors with good matching in one package C1 B2 E2 6 5 4 TR2 TR1


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    PDF BC817U EHA07178

    C2320

    Abstract: BC 170 transistor Q62702-C2320 transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 c2278 C2324
    Text: BC 817W,BC 818W NPN Silicon AF Transistor l For general AF applications l High collector current l High current gain l Low collector-emitter saturation voltage l Complementary types: BC 807W, BC 808W PNP Type Marking BC 817-16W BC 817-25W BC 817-40W BC 818-16W


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    PDF 17-16W 17-25W 17-40W 18-16W 18-25W 18-40W Q62702-C2320 Q62702-C2278 Q62702-C2321 Q62702-C2322 C2320 BC 170 transistor Q62702-C2320 transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 c2278 C2324

    JIS B1181

    Abstract: B1181 TRANSISTOR b1181 AC229 B1251 B1256 spring washer b1257 AC331 ac332
    Text: [ 6 ] Accessories [ 6 ] Accessories [ 6 ] Accessories When semiconductors are used, accessories are sometimes required. For these accessories, the numbers shown below the device dimensions on the technical data sheet are applicable. The uses of some typical accessories are shown in the illustrations below.


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    PDF 2-10P1B, O-220AB) AC604 RH-14 AC229 AC311 JIS B1181 B1181 TRANSISTOR b1181 AC229 B1251 B1256 spring washer b1257 AC331 ac332

    sCapacitor

    Abstract: C5068 12v zener diode JEDEC 1N
    Text: SC4525C 28V 3A Step-Down Switching Regulator POWER MANAGEMENT Features            Description Wide input range: 3V to 28V 3A Output Current 200kHz to 2MHz Programmable Frequency Precision 1V Feedback Voltage Peak Current-Mode Control


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    PDF SC4525C SC4525C sCapacitor C5068 12v zener diode JEDEC 1N

    BUY49P

    Abstract: 6Bs transistor SGS Transistor sc06960 0118 transistor Transistor 78 L 05 7R2R237
    Text: r z 7 SCS-1H0 MS0 N ^ 7# Rsiisæii[Liieî^ iiiei BUY49P SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BUY49P is a silicon epitaxial planar NPN transistor in jedec SOT-32 plastic package. It is used in high-current switching applications up to


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    PDF BUY49P BUY49P OT-32 OT-32 7R2R237 6Bs transistor SGS Transistor sc06960 0118 transistor Transistor 78 L 05

    BC 170 transistor

    Abstract: No abstract text available
    Text: SIEMENS BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emltter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration


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    PDF 17-16W BC807W, BC808W OT-323 Q62702-C2321 18-16W Q62702-Ã 18-25W Q62702-C2323 18-40W BC 170 transistor

    BC 170 transistor

    Abstract: bc 471 transistor bc 470 Q62702-C2320 6bs transistor SOT-323 N transistor 6cs 1B marking transistor marking 6Bs bc 170 c sot 323 lb
    Text: SIEMENS BC 817W BC 818W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code BC 817-16W


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    PDF BC807W, BC808W 17-16W 17-25W 17-40W 18-16W 18-25W 18-40W Q62702-C2320 Q62702-C2278 BC 170 transistor bc 471 transistor bc 470 6bs transistor SOT-323 N transistor 6cs 1B marking transistor marking 6Bs bc 170 c sot 323 lb

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


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    PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    TRANSISTOR BFR97

    Abstract: BFR97 2N3866 2N3866 SCHEMATIC 2N3866-BFR97 2N3866 metal Planar choke Transistor 2N3866 data 2n3866
    Text: 30E D • 7^53537 0031187 b ■ \ ‘3 > 0 5 SGS-THOMSON IMOœiLlICTliMOûS 2N3866 BFR97 S G S-TH0MS0N VHF-UHF POWER AMPLIFIER DESCRIPTION The 2N3866 and BFR97 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF-UHF class A, B, or C amplifier cir­


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    PDF QQ311fl7 2N3866 BFR97 2N3866-BFR97 50J-L T-33-05 2N3866-BFR97 200mW TRANSISTOR BFR97 2N3866 SCHEMATIC 2N3866 metal Planar choke Transistor 2N3866 data 2n3866