NEC 2905
Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
Text: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
NEC 2905
NEC 1357
2SC4228-T1
2SC4228-T2
transistor 936
sc 789 transistor
1357 transistor NEC
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Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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NE58219
2SC5004
2SC5004
NE58219-A
2SC5004-A
NE58219-T1-A
2SC5004-T1-A
perfor516
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NEC JAPAN 237 521 02
Abstract: transistor zo 607 2SC5004
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5004
2SC5004
NEC JAPAN 237 521 02
transistor zo 607
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transistor zo 607
Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Text: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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NE58219
2SC5004
2SC5004
NE58219
NE58219-T1
2SC5004-T1
transistor zo 607
zo 607 MA
2SC5004-T1
NE58219-T1
nec 237 521 02
NE582
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automotive ignition tip162
Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —
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BU323AP
BU323AP
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
automotive ignition tip162
bc337 cross-reference
BU108
BD390 cross reference
replacement transistor BC337
BUX48A
2SD1815 "cross reference"
TIP102 Darlington transistor
Motorola MJ15022
MJ1000
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P364
Abstract: tyco igbt V23990-P364-F
Text: V23990-P364-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P364-F
Tj150
D81359
P364
tyco igbt
V23990-P364-F
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MJE15020
Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment
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MJE340
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
MJE15020
DTS423
mje15033 replacement
2SC243
BD388-5
2SC1826
BD263
2SC1903
SE9302
2SA698
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BUS48AP
Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD166
BD165
BD166
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BUS48AP
2SC1381
mje15033 replacement
2SA698
BD477
BD139.16
2N307
2SC1224
2SD549
BD139.10
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"MARKING CODE P5"
Abstract: BFG425W
Text: DISCRETE SEMICONDUCTORS BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Apr 16 File under Discrete Semiconductors, SC14 1997 Oct 28 Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES
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BFG425W
SCA55
127127/00/03/pp12
"MARKING CODE P5"
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"MARKING CODE P5"
Abstract: 03389 BFG425W
Text: DISCRETE SEMICONDUCTORS BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES
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BFG425W
SCA57
125104/00/04/pp12
"MARKING CODE P5"
03389
BFG425W
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BU108
Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:
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BUX41
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
BU108
2SC1629 equivalent
BDX54
BU326
BU100
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BU108
Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:
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BU522B
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
BU108
BC337 circuit example
BC337 rbe
BDX54
replacement transistor BC337
BU326
BU100
MOTOROLA 2N3773
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transistor NEC D 822 P
Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
transistor NEC D 822 P
NEC D 986
transistor NEC B 617
transistor NEC D 587
r44 marking
transistor D 2624
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transistor NEC D 822 P
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
transistor NEC D 822 P
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LB1273R
Abstract: No abstract text available
Text: Ordering number: EN 667B Monolithic Digital 1C I L B 1 2 73R N 0 .6 6 7 B 6-Unit, Darlington Transistor Array The circuit construction of this IC is a Darlington transistor array with six units, most suitable for printer hammer drive, lamp, and relay drive.
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18-digit
230mA
LB1273R
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NEC 1357
Abstract: LA 8873 TRANSISTOR C 4460
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
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2SC5004
2SC5004
NEC 1357
LA 8873
TRANSISTOR C 4460
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D 1437 transistor
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the
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2SC5004
D 1437 transistor
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Untitled
Abstract: No abstract text available
Text: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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BLX93A
tbS3T31
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BLX93A
Abstract: BLX93 PCOT 01827 IEC134 transistor WC 2C TRANSISTOR G13 plw series capacitor TH90
Text: N AMER PHILIPS/DISCRETE _ 8 6 0 0 1 8 2 2 ObE D D ~T - • * 3 bbS3T31 G014Gb0 Ü “j ^ BLX93A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and Is guaranteed to withstand severe
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BLX93A
BLX93A
BLX93
PCOT
01827
IEC134
transistor WC 2C
TRANSISTOR G13
plw series capacitor
TH90
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Untitled
Abstract: No abstract text available
Text: 2N6659 2N6660 _ / V _ 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and line drivers.
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2N6659
2N6660
2N6661
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SMPS 666
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuli-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies SMPS ,
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BUK474-60H
-SOT186A
SMPS 666
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vostro 1400
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK445-200A/B
BUK445
-200A
-200B
PINNING-SOT186
vostro 1400
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BLX92A
Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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BLX92A
BLX92A
BLX92
em 179
sfe 5,5 ma
IEC134
transistor IR 944
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SMPS 666
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Powerll/IOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies SMPS ,
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BUK474-60H
OT186A
SMPS 666
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