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    TRANSISTOR 60 12W Search Results

    TRANSISTOR 60 12W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 60 12W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20 watts transistor s-band

    Abstract: j948
    Text: 3135GN-170M Rev 1 3135GN – 170M 170 Watts - 60 Volts, 300 s, 10% 3100 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 3135GN-170M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 170 Watts of pulsed RF


    Original     		PDF 3135GN-170M 3135GN 55-QP 20 watts transistor s-band j948

    2731GN-200M

    Abstract: 2731GN power transistor gan s-band J6 transistor Gan transistor j374
    Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF


    Original     		PDF 2731GN-200M 2731GN 55-QP 2731GN power transistor gan s-band J6 transistor Gan transistor j374

    j521

    Abstract: No abstract text available
    Text: 3135GN-170M Rev 2 3135GN – 170M 170 Watts - 60 Volts, 300 s, 10% 3100 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 3135GN-170M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 170 Watts of pulsed RF


    Original     		PDF 3135GN-170M 3135GN 55-QP 55-QP j521

    2731GN

    Abstract: No abstract text available
    Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF


    Original     		PDF 2731GN-200M 2731GN 55-QP 55-QP 2731GN

    a 1757 transistor

    Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor MOSFET mark J7 GRM40 transistor 1758

    a 1757 transistor

    Abstract: 78s12 GRM40 RD12MVS1 T112
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor 78s12 GRM40 T112

    transistor+SMD+12W+MOSFET

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz) transistor+SMD+12W+MOSFET

    MOSFET mark J7

    Abstract: 78s12 RD12MVS 043mm transistor t06 19
    Text: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) RD12MVS1-101 Oct2011 MOSFET mark J7 78s12 RD12MVS 043mm transistor t06 19

    mosfet marking 12W

    Abstract: 12w marking GRM40 RD12MVS1 T112
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) mosfet marking 12W 12w marking GRM40 T112

    78s12

    Abstract: RD12MVS1-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) 78s12 RD12MVS1-101

    a 1757 transistor

    Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 T112 MOSFET 12W mosfet 4816 mosfet 1208

    transistor 12w

    Abstract: PH1214-12M
    Text: PH1214-12M Radar Pulsed Power Transistor 12W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


    Original     		PDF PH1214-12M transistor 12w PH1214-12M

    Untitled

    Abstract: No abstract text available
    Text: PH1214-12M Radar Pulsed Power Transistor 12W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


    Original     		PDF PH1214-12M

    SLD2083CZ

    Abstract: j20 Schematic thermistor 100k SLD-2083 01UF 10UF SLD-2083CZ j20 all Schematic RF083 CONNECTOR SMA 905 drawing
    Text: SLD-2083CZ SLD-2083CZ 12Watt Discrete LDMOS FET in Ceramic Package 12WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE RFMD Green, RoHS Compliant, Pb-Free Package: RF083 Product Description Features RFMD’s SLD-2083CZ is a robust 12Watt high performance LDMOS transistor designed for operation to 1600MHz, It is an excellent solution for


    Original     		PDF SLD-2083CZ 12Watt RF083 SLD-2083CZ 1600MHz, SLD2083CZ Gain06031A2100FKHFT j20 Schematic thermistor 100k SLD-2083 01UF 10UF j20 all Schematic RF083 CONNECTOR SMA 905 drawing

    TDA2030

    Abstract: TDA2030 pin layout how to test tda2030 TDA2030 equivalent amplifier circuit tda2030 tda2030 pin configuration tda2030 bridge configuration tda2030 bridge tda2030 data LAYOUT TDA2030
    Text: TDA2030 14W Hi-Fi AUDIO AMPLIFIER DESCRIPTION The TDA2030 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class AB amplifier. Typically it provides 14W output power d = 0.5% at 14V/4Ω; at ± 14V the guaranteed output power is 12W on a 4Ω load


    Original     		PDF TDA2030 TDA2030 DIN45500) TDA2030 pin layout how to test tda2030 TDA2030 equivalent amplifier circuit tda2030 tda2030 pin configuration tda2030 bridge configuration tda2030 bridge tda2030 data LAYOUT TDA2030

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO Pin : R F IN P U T V C C I : 1s t. DC S U P P L Y ®VBB : BA SE B IA S S U P P L Y @ V C C 2 : 2 n d . DC S U P P L Y ®PO : RF O U T P U T © G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25T unless otherwise noted)


    OCR Scan     		PDF M57789 889-915MHz,

    Untitled

    Abstract: No abstract text available
    Text: ^24^62^ DD1 7 2 6 3 547 • MITSUBISHI RFPOWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO BLOCK DIAGRAM 1 . œHh PIN : P in RF INPUT Vcci 1st. DC SUPPLY <$VBB BASE BIAS SUPPLY ®VCC2 2nd. DC SUPPLY ®Po RF O UTPUT ®GND FIN ABSOLUTE MAXIMUM RATINGS 0 0 = 2 5 ^ unless otherwise noted


    OCR Scan     		PDF M57789 889-915MHz,

    P04 transistor

    Abstract: transistor p04 12W 02 transistor M57789 transistor zg transistor po3 transistor TC 10 12W 01 TRANSISTOR rf transistor s parameters
    Text: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO PIN : P in : RF IN P U T © V C C I : 1s t. DC S U P P L Y VBB : B A S E B IA S S U P P L Y © V C C 2 : 2 n d . DC S U P P L Y ©PO : RF O U T P U T © G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 <1C unless otherwise noted


    OCR Scan     		PDF M57789 889-915MHz, P04 transistor transistor p04 12W 02 transistor M57789 transistor zg transistor po3 transistor TC 10 12W 01 TRANSISTOR rf transistor s parameters

    transistor 12w

    Abstract: M57789
    Text: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO PIN : P in ©VCCI <DV8B ©VCC 2 ©Po GND : : : : : : RF INPUT 1st. DO SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25^C unless otherwise noted


    OCR Scan     		PDF M57789 889-915MHz, transistor 12w M57789

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57789 890-915MHz, 12.5V, 12W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © GHh PIN : DPin ©VCC1 @ VBB VCC2 ®Po ®GND RF INPUT 1st. DC SUPPLY BASE BIAS 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted


    OCR Scan     		PDF M57789 890-915MHz, DDlb272

    TA7274P

    Abstract: Gv54 R2RF N2420 24v AUDIO transistor AMPLIFIER CIRCUIT DIAGRAM
    Text: TOSHIBA -, ELECTRONIC OE 90 9 7 2 4 7 TOSHIBA. T TDT7SM7 ÜQ170G3 b ELECTRONIC 02E 12W BTL AUDIO POWER AMPLIFIER Unit in mm The TA7274P is audio power amplifier for consumer application. This IC is applying BTL system in which output couppling condenser and bootstrap condenser are


    OCR Scan     		PDF Q170G3 TA7274P T-74-OS TA7274P 64cmz Gv54 R2RF N2420 24v AUDIO transistor AMPLIFIER CIRCUIT DIAGRAM

    RF condenser

    Abstract: 24v AUDIO transistor AMPLIFIER CIRCUIT DIAGRAM TA7274P 02-2AF
    Text: TOSHIBA-, E L E C T R O N I C 9097247 TOSHIBA. 1 OB ÏT"| Ì C H 7 5 M 7 Ü D 1 7 0 G 3 b ELECTRONIC 02E 12W BTL AUDIO POWER AMPLIFIER Unit in mm The TA7274P is audio power amplifier for consumer application. This IC is applying BTL system in which output


    OCR Scan     		PDF 1CH7547 0170G3 TA7274P TA7274P RF condenser 24v AUDIO transistor AMPLIFIER CIRCUIT DIAGRAM 02-2AF

    TFK 082

    Abstract: J1 TRANSISTOR
    Text: ß tfk c m 1 m a n A M P com pany Wireless Bipolar Power Transistor, 12W PH1617-12N 1.6-1.7 GHz y/b Features £4 /7 '25 • • • • • • • ( 18 . 4 2 ) NPN Silicon M icrow ave P ow er T ran sisto r D esigned fo r L inear A m plifier A pplications


    OCR Scan     		PDF PH1617-12N TT50M TFK 082 J1 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. • Output Power : Po = 12W Min. (f= 470MHz, V ee = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC2642 470MHz, 02//F 961001EAA2'