TRANSISTOR 5FT Search Results

TRANSISTOR 5FT Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 5FT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
marking 5ft sot363 Abstract: MARKING CODE 5ft sot363 SC-88 5ft 5FT SOT363 marking TR1 5Ft marking SC88 SOT363 plastic package 5ft MARKING CODE 5Ft marking SOT-363 Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC856S PNP general purpose double transistor Product specification 1999 Aug 24 Philips Semiconductors Product specification PNP general purpose double transistor BC856S FEATURES • Two transistors in one package	Original	MBD128 BC856S MAM339 SC-88 OT363) SC-88) 115002/01/pp8 marking 5ft sot363 MARKING CODE 5ft sot363 SC-88 5ft 5FT SOT363 marking TR1 5Ft marking SC88 SOT363 plastic package 5ft MARKING CODE 5Ft marking SOT-363	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: \| FORWARD INTERNATIONAL ELECTRONICS L ID . 2N3906 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to 2N3904 * Collector-Emitter Voltage: Vceo=-40V * Collector Dissipation; Pc=625 mW Ta=25°C ABSOLUTE MAXIMUM RATINGS at Tamb=25*C	OCR Scan	2N3906 2N3904 -10uA -100mA -10mA -50mA	PDF
BT816 Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728 Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan	mm/13" O-92S) BT816 TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728	PDF
Untitled Abstract: No abstract text available Text: MARKTECH INT ERN AT IO NAL ~fl7 dF \| 57^55 O D D D 1 DÖ □ TRANSISTOR COUPLER 87D 00108 5799655 M A R K T E C H INTERNATIONAL 4N35 GaAs INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS • A C LIN E/D IG IT AL L O G IC ISO LA T O R • D IG ITAL LO G IC/D IG IT A L L O G IC ISO LA T O R	OCR Scan		PDF
transistor 2N4 Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748 Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TO SH IB A TECHNICAL TLP627, TLP627-2, TLP627-4 DATA GaAs IRED & PHOTO-TRANSISTOR TLP627 U n it in mm PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION. ti 2 The TOSHIBA TLP627, -2, and -4 consist of a gallium	OCR Scan	TLP627, TLP627-2, TLP627-4 TLP627) TLP627	PDF
2SC2116 Abstract: TRANSISTOR S 813 Text: ^j3yNPNx^5>^T b7^-tm^yvx5> »ILICON NPN EPITAXIAL PLANAR TRANSISTOR 2 2116 sc TENTATIVE O VHF~UHFffi#*Ji<gffi O VHF~UHF Low Noise Amplifier Application • 'J' S W 11 S • Mini-Package 2.2mm0 —a- KJg 2.2mm0mold type MAXIMUM RATINGS T a = 25°C) CHARACTERISTIC SYMBOL RATING	OCR Scan	2sc2116 500MHz 2SC2116 TRANSISTOR S 813	PDF
BUK455-500B Abstract: BJE 80 diode T0220AB Text: N AP1ER P H I L I P S / D I S C R E T E bTE D • bbS313 1 DOBDbLiD 76T H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - T 0220A B SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation	OCR Scan	bbS3131 BUK455-500B T0220AB 03Qbfc /V-10 BJE 80 diode	PDF
b175 transistor Abstract: b173 6DI75M-050 IS18 P460 T151 T810 Text: 6DI75M-050 75A ‘ Outline Drawings POWER TRANSISTOR MODULE • t t f t : Features • ffih FE High DC Current Gain • High Speed Switching : A p p lic a tio n s ? General Purpose Inverter • mwnwmw Uninterruptible Power Supply Servo & Spindle Drive for NC Machine Tools	OCR Scan	6DI75M-050 95t/R89 Shl50 b175 transistor b173 IS18 P460 T151 T810	PDF
wi fi schematic Abstract: M106 T151 T930 Text: 1DI3OOZ-14O 300a ^ ± / < r7 - ^ C > D . - ) U : Outline Drawings POWER TRANSISTOR MODULE >3 21 29 •r X ~ ~ ïï_ ' F ea tures • High Voltage • 7 'J — Including Free W heeling Diode • A S O /^J a U • W Êflb Excellent Safe Operating Area Insulated Type	OCR Scan	1DI3OOZ-14O E82988 I95t/R89) Shl50 wi fi schematic M106 T151 T930	PDF
N1702 Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922 Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961	OCR Scan	2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922	PDF
SPW-500-S Abstract: No abstract text available Text: 6DI30A-12CH30A M i N ' i i : Outline Drawings POWER TRANSISTOR MODULE : Features ì • 7 V —44 }) # 4 =t— Kl3j0E Including Free Wheeling Dipde • hFE^ftv.' High DC Current Gain Insulated Type È * » ta ,ia I» ii »a[7 TiblrPlrmin»i* AMPMe. Î	OCR Scan	6DI30A-12CH30A) E82988 4i-i23i I95t/R89 5hl50 SPW-500-S	PDF
characteristics of zener diode Abstract: 1DI300ZP-120 zener diode b355 M114 1DI300Zp120 TRANSISTOR BO 352 Text: 1 D 3 I Z P - 1 2 3 A « ± y<r7 - h : Outline Drawings POWER TRANSISTOR MODULE •Features • hFE^^V-' High DC Current Gain • KF*3/K •smmmuimm : Applications • General Purpose Inverter >'<— 9 • Uninterruptible Power Supply • N Servo & Spindle Drive for NC Machine Tools	OCR Scan	1DI300ZP-120 26-35kg E82988 095t/R89 characteristics of zener diode zener diode b355 M114 1DI300Zp120 TRANSISTOR BO 352	PDF

Untitled Abstract: No abstract text available Text: D 1 O 2 O A - O 2 O 2 a / < 9 — !> ' Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • High Current • High DC Current Gain • Non Insulated Typ e : A p p lic a tio n s f High Power Switching • ftE ffW R S IK Uninterruptible Power Supply	OCR Scan	30S3-% I95t/R89	PDF
3SK168 Abstract: No abstract text available Text: SANYO SEMICONDUCTOR CÖRP 12E D \| OGDS4 7 S =1 T 'il'Z s r 3SK168 GaAs Dual Gate M ES Silicon Field-Effect Transistor 2053 -' TTITD Tb 'S- • U H F Amp, Mixer Applications 2252 Absolute H a z l a n Batlags at Ta=25°C Drain to Source Voltage 'DS Gatel to Source Voltage	OCR Scan	3SK168 100uA IS-20MA IS-313 IS-313A 3SK168	PDF
SPT1002 Abstract: B-226 B226S SFT1001 SFT1003 SFT1004 SFT1010 SFT1012 spt100 SOLID STATE INC Text: SOLID STATE DEVICES INC 1SE D \|fl3bb011 QDQ21D1 T \| T - 3 3 - iS ' PRELIMINARY DATA SHEET 5 -8 -8 5 SFT1002 AND SFTÍ004 100 AMP HIGH SPEED NPN TRANSISTOR 250 VOLTS CASE STYLE R FEATURES TO—3 WITH .0 0 0 PINS • • • • • • • • 14830 Valley V iew Avenue	OCR Scan	SFT10Ã SFT1001 SFT1003 20ohms) 20Vdc, 15Adc) 100Vdc, 60Vdc, 300us. SPT1002 B-226 B226S SFT1003 SFT1004 SFT1010 SFT1012 spt100 SOLID STATE INC	PDF
2SA939 Abstract: 2SA939 B 2SA839 HI-FI AMP 200X2mm 2SA839-0 sfik Text: 2 s a 839 " ^ v i i y p N ^ P = m m * y & ^ y y z 5> SILICON PNP TR IP LE DIFFUSED MESA TRANSISTOR o ismmntimmm o mmmnttmmm o Audio Power Amplifier Applications o Driver Stage Amplifier Applications • S if f l E T -i - : • asm* v CE0 = - 150 V Hi-Fi 2 S C 1 6 69 k	OCR Scan	2sa839 -150V 8SC1669 220AB 8-10A1A 2SA939 2SA839â 2SA839-Y 200X2mm 2SA939 B 2SA839 HI-FI AMP 2SA839-0 sfik	PDF
LTTG Abstract: 1DI75E-100 30S3 M206 T460 T760 T930 Text: 1DI75E-100 75a / < 7 n .-)U - h 7 I • Out l i ne D raw ings POWER TRANSISTOR MODULE : Features • If/± • High Voltage 7 '; - j m uv * • A S O tf^ v .' - k rt * Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type \R ìà • A p p lic a tio n s	OCR Scan	1DI75E-100 I95t/R89) Shl50 LTTG 30S3 M206 T460 T760 T930	PDF
P460 Abstract: T151 T810 transistor and schematic symbols FA-MT Text: ETM36-O3O 200a / < 7 - Y=7 =l-)V I : Out l i ne D raw ing s POWER TRANSISTOR MODULE 94 « e 9 ' Features ie \ • * y fc High Current • h F E ^ g tv High DC Current Gain £ •immm 3 / / - Non Insulated Type XN s T Y, f t p-J $ a 2-M 7e \|B\| 82 24 13 i 9 /	OCR Scan	ETM36-O3O l95t/R89 Shl50 P460 T151 T810 transistor and schematic symbols FA-MT	PDF
transistor 009 Abstract: diode B61 transistor bf 760 S535 M109 T810 T930 Text: 1 D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • F e a tu re s • hFEv'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p lic a t io n s • ’X M .t) 74 "/•?■>?	OCR Scan	11S19 l95t/R89 transistor 009 diode B61 transistor bf 760 S535 M109 T810 T930	PDF
BT 815 transistor Abstract: Transistor BFR 96 pt 4115 2SA1625 PA33 T108 X108 ih 0565 r EI 33 LX108 Text: NEC l i f A I / 1] Silicon Tran sistor i i f X 2SA1625 PNP = S il£ i PNP Silicon Triple Diffused Transistor High Speed, High Voltage Switching mm O i^ ii E t 'C 'i'o V Ce o = - 4 0 0 ^ -fi • mm V V CE(sat)^ - 0 .5 V O T A 7 f s tf — 1 . 0 (T a — m	OCR Scan	2SA1625 PWS300 SC-43B BT 815 transistor Transistor BFR 96 pt 4115 2SA1625 PA33 T108 X108 ih 0565 r EI 33 LX108	PDF
2SK992 Abstract: U71E 720-ES RXSU 4 T108 T460 332h tt 22 Text: MOS Field Effect Pow er Transistor 2SK992 MOS F E T j i m 2SK992 Ü , m FET f , 5 V ifiJ^ IC iotbi i i z i è H fë m ib W fiè & îïïim z a -y - f> < , * y v / ' f K, 7 X A "/ f - > r w t t t f ililT ft» x t- t. & £ £ > , t - IM S : mm 10.5 MAX.	OCR Scan	2SK992 26-Lfli06) 332-H 37-ffi 29-BlSfl 2SK992 U71E 720-ES RXSU 4 T108 T460 332h tt 22	PDF
Untitled Abstract: No abstract text available Text: ETM36-O3O 200a / < 7 - Y=7 =l-)V I : Out l i ne D raw ing s POWER TRANSISTOR MODULE 94 « ' Features \ • * y fc High Current • h F E ^ g tv High DC Current Gain £ • im m m 3 / */ - N o n I n s u la te d T y p e 7e e 82 24 13 i 9 ie XN s T Y, ft $p- J	OCR Scan	ETM36-O3O I95t/R89)	PDF

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TRANSISTOR 5FT Search Results

TRANSISTOR 5FT Result Highlights (5)

TRANSISTOR 5FT Datasheets Context Search

marking 5ft sot363

sx3704

Untitled

BT816

Untitled

transistor 2N4

Untitled

2SC2116

BUK455-500B

b175 transistor

wi fi schematic

N1702

SPW-500-S

characteristics of zener diode

Untitled

3SK168

SPT1002

2SA939

LTTG

P460

transistor 009

BT 815 transistor

2SK992

Untitled