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    TRANSISTOR 5D Search Results

    TRANSISTOR 5D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 5D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    smd transistor marking 5D

    Abstract: transistor 5d smd smd transistor 5d sot-23 CMBT4125 ic 556 specifications MARKING SMD PNP TRANSISTOR br smd transistor 5d
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4125 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE


    Original     		PDF ISO/TS16949 OT-23 CMBT4125 C-120 smd transistor marking 5D transistor 5d smd smd transistor 5d sot-23 CMBT4125 ic 556 specifications MARKING SMD PNP TRANSISTOR br smd transistor 5d

    transistor 5d smd

    Abstract: smd transistor marking 5D smd transistor 5d smd transistor 5d sot-23 smd diode marking 5d diode 5d smd smd diode 5d CMBT4125 MARKING 350 IC 5D SMD Transistor
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4125 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF OT-23 CMBT4125 C-120 transistor 5d smd smd transistor marking 5D smd transistor 5d smd transistor 5d sot-23 smd diode marking 5d diode 5d smd smd diode 5d CMBT4125 MARKING 350 IC 5D SMD Transistor

    Untitled

    Abstract: No abstract text available
    Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The


    Original     		PDF SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809

    SGA8543Z-EVB2

    Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
    Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The


    Original     		PDF SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809 SGA8543Z-EVB2 marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P

    transistor 5d smd

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4125 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 CMBT4125 C-120 transistor 5d smd

    transistor 5d smd

    Abstract: smd transistor 5d sot-23 smd transistor marking 5D smd transistor 5d 5D SMD Transistor 5d smd sot-23 ts 4141 TRANSISTOR smd 5d smd transistor data CMBT4125 MARKING SMD pnp TRANSISTOR ec
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4125 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT4125 = 5D Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF OT-23 CMBT4125 C-120 transistor 5d smd smd transistor 5d sot-23 smd transistor marking 5D smd transistor 5d 5D SMD Transistor 5d smd sot-23 ts 4141 TRANSISTOR smd 5d smd transistor data CMBT4125 MARKING SMD pnp TRANSISTOR ec

    power Junction FET advantages and disadvantages

    Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
    Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor


    Original     		PDF ED-19, 5966-3084E power Junction FET advantages and disadvantages 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet

    301 marking code PNP transistor

    Abstract: bc807 marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC807W PNP general purpose transistor Product specification Supersedes data of 1997 Jun 09 1999 May 18 Philips Semiconductors Product specification PNP general purpose transistor BC807W FEATURES PINNING


    Original     		PDF M3D187 BC807W OT323 BC817W. BC807-25W BC807-16W 115002/00/03/pp8 301 marking code PNP transistor bc807 marking code

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC807 PNP general purpose transistor Product specification Supersedes data of 1997 Feb 28 1999 Apr 08 Philips Semiconductors Product specification PNP general purpose transistor BC807 FEATURES PINNING


    Original     		PDF M3D088 BC807 BC817. BC807-16 BC807-25 BC807-40 MAM256 SCA63

    BFG94

    Abstract: MBB780 TRANSISTOR HANDBOOK MBB788
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG94 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFG94 PINNING • High power gain


    Original     		PDF BFG94 OT223 MSB002 OT223. BFG94 MBB780 TRANSISTOR HANDBOOK MBB788

    16HHF1

    Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


    Original     		PDF RD16HHF1 30MHz RD16HHF1 30MHz 16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF

    RD16HHF1

    Abstract: RD16HHF1 application notes RD16HHF1-101 mosfet HF amplifier transistor d 1680 RD16HHF
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


    Original     		PDF RD16HHF1 30MHz RD16HHF1 30MHz RD16HHeater RD16HHF1 application notes RD16HHF1-101 mosfet HF amplifier transistor d 1680 RD16HHF

    Untitled

    Abstract: No abstract text available
    Text: CMBT4125 GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 Pin configuration 1 = BASE 2 = EMITTER 3 = CO LLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)


    OCR Scan     		PDF CMBT4125

    CMBT4125

    Abstract: No abstract text available
    Text: CMBT4125 GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 0.09 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1,02_ 0.89 0.60 0.40 _ 2 . 00 _ 1.80 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF CMBT4125 CMBT4125

    Untitled

    Abstract: No abstract text available
    Text: CMBT4125 L GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0 .14 0.48 0.38 3 Pin configuration 1 = BASE 2 - EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 0.8ÌT 0.60 0.40 2.00 1.80 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF CMBT4125

    2sc2904 TRANSISTOR

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC2904 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dim ensions in mm R1 FEATURES • High gain: Gpe ^ 1 1 -5dB


    OCR Scan     		PDF 2SC2904 2SC2904 2sc2904 TRANSISTOR

    CMBT4125

    Abstract: No abstract text available
    Text: GENERAL PURPOSE TRANSISTOR P -N -P transistor M arking CMBT4125 = 5D PACKAGE O UTLIN E DETAILS * A LL D IM EN SION S IN m m 0.14 ~]pTÜ9 J. 0.70 0.50 "1 1.4 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.2 R0.1 •004 ' 0.12 0.02 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF CMBT4125 0000fl31 CMBT4125

    2SC3908

    Abstract: op 30MHZ PORCELAIN dust cap LC 7w RF POWER TRANSISTOR NPN 3 w RF POWER TRANSISTOR NPN
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3908 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 3908 is a silicon NPN epitaxial planar typ e transistor Dim ensions in m m designed fo r H F pow er am p lifie rs applications. R1 FEATURES • High pow er gain: G pe ^ 1 1 .5dB


    OCR Scan     		PDF 2SC3908 2SC3908 T-40E op 30MHZ PORCELAIN dust cap LC 7w RF POWER TRANSISTOR NPN 3 w RF POWER TRANSISTOR NPN

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK566-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount


    OCR Scan     		PDF BUK566-60H BUK566-60H

    marking 5b philips

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BC807W PNP general purpose transistor Product specification Supersedes data of 1997 Jun 09 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification PNP general purpose transistor BC807W FEATURES


    OCR Scan     		PDF BC807W BC807W OT323 BC817W. BC807-16W BC807-25W BC807-40W MAM048 SCA64 marking 5b philips

    smd JSs 75

    Abstract: smd JSs smd JSs transistor smd JSs diode transistor 5d smd BUK9606-55A smd JSs 85
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


    OCR Scan     		PDF BUK9606-55A SQT404 smd JSs 75 smd JSs smd JSs transistor smd JSs diode transistor 5d smd BUK9606-55A smd JSs 85

    Untitled

    Abstract: No abstract text available
    Text: Product specification P hilips S em iconductors BC807W; BC808W PNP general purpose transistor PIN CONFIGURATION FEATURES • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and amplification.


    OCR Scan     		PDF BC807W; BC808W OT323 BC807W: BC807-16W BC807-25W BC807-40W BC808W: BC808-16W