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    TRANSISTOR 421 Search Results

    TRANSISTOR 421 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 421 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to


    Original     		PDF NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D

    419B-02

    Abstract: NSM11156DW6T1G marking .544 sot363
    Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to


    Original     		PDF NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D 419B-02 marking .544 sot363

    Untitled

    Abstract: No abstract text available
    Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


    Original     		PDF NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D

    N5 npn transistor

    Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
    Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


    Original     		PDF NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D N5 npn transistor N5 transistor SC-88 419B-02 NSM46211DW6

    419B-02

    Abstract: NSM21356DW6T1G SC marking code NPN transistor
    Text: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original     		PDF NSM21356DW6T1G NSM21356DW6T1G SC-88/SOT-363 NSM21356DW6/D 419B-02 SC marking code NPN transistor

    419B-02

    Abstract: NSM21156DW6T1G marking .544 sot363 NSM21
    Text: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original     		PDF NSM21156DW6T1G NSM21156DW6T1G SC-88/SOT-363 NSM21156DW6/D 419B-02 marking .544 sot363 NSM21

    Untitled

    Abstract: No abstract text available
    Text: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original     		PDF NSM21156DW6T1G NSM21156DW6T1G SC-88/SOT-363 NSM21156DW6/D

    Untitled

    Abstract: No abstract text available
    Text: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original     		PDF NSM21356DW6T1G NSM21356DW6T1G SC-88/SOT-363 NSM21356DW6/D

    NSB1706DMW5T1G

    Abstract: No abstract text available
    Text: NSB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1706DMW5T1G NSB1706DMW5T1G, SC-88A NSB1706DMW5T1/D NSB1706DMW5T1G

    Untitled

    Abstract: No abstract text available
    Text: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1706DMW5T1G, NSVB1706DMW5T1G SC-88A NSB1706DMW5T1/D

    Untitled

    Abstract: No abstract text available
    Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


    Original     		PDF BUD42D D42DG BUD42D/D

    Untitled

    Abstract: No abstract text available
    Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


    Original     		PDF BUD42D BUD42D BUD42D/D

    369D

    Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
    Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


    Original     		PDF BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG

    Untitled

    Abstract: No abstract text available
    Text: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1706DMW5T1G, NSVB1706DMW5T1G NSB1706DMW5T1/D

    D42DG

    Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
    Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


    Original     		PDF BUD42D BUD42D BUD42D/D D42DG BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 MUR105

    2SC1223

    Abstract: 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 2SC3604 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and


    Original     		PDF 2SC3604 2SC3604 2SC1223 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149

    Marking M60

    Abstract: transistor 11
    Text: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR


    Original     		PDF NSM6056MT1G SC-74 NSM6056M/D Marking M60 transistor 11

    Untitled

    Abstract: No abstract text available
    Text: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR


    Original     		PDF NSM6056MT1G NSM6056M/D

    Untitled

    Abstract: No abstract text available
    Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot


    Original     		PDF MJD18002D2 MJD18002D2 MJD18002D2/D

    NEC K 2500

    Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3604 2SC3604 15obots NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150

    2SC2150

    Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3604 2SC3604 2SC3603 2SC2150 2SC1223 TRANSISTOR 2sC 5250 micro X

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: BF420/421 npn/pnp HIGH VOLTAGE SILICON TRANSISTOR TO-92. BF420 and BF421 are complementary NPN/PNP silicon planar epitaxial transistor . Designed for high voltage video amplifiers in colour television receivers including grid drive and in driver stages of high voltage line deflection


    OCR Scan     		PDF BF420/421 BF420 BF421 200mA 830mW 10jiA

    Untitled

    Abstract: No abstract text available
    Text: BF420/421 ; n pn /pnp HIGH VOLTAGE SILICON TRANSISTOR TO-92. BF420 and BF421 are complementary NPN/PNP silicon planar epitaxial transistor . Designed for high voltage video amplifiers in colour television receivers including grid drive and in driver stages of high voltage line deflection


    OCR Scan     		PDF BF420/421 BF420 BF421 200mA 830mW 10jiA