TRANSISTOR 400 VOLTS Search Results

TRANSISTOR 400 VOLTS Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 400 VOLTS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJ423 Abstract: Y300500 Text: ON Semiconductort MJ423 High-Voltage NPN Silicon Transistor . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS • High Voltage — • • VCEX = 400 Vdc	Original	PDF	MJ423/D r14525 MJ423 Y300500
Untitled Abstract: No abstract text available Text: 2729GN-400 Rev 1 2729GN-400 400 Watts - 65 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 2729GN-400 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 11dB gain, 400 Watts	Original	PDF	2729GN-400 2729GN-400 55-KR 55-KR
1N4001 transistor free Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.	Original	PDF	BU323AP BU323AP r14525 BU323AP/D 1N4001 transistor free BC337 figure 1N4001 BC337 BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
BC337 rbe Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.	Original	PDF	BU323AP BU323AP r14525 BU323AP/D BC337 rbe BC337 figure 1N4001 BC337 BU323P diode 1N4001 voltage limitations
MDS400 Abstract: No abstract text available Text: MDS400 400 Watts Pk, 45 Volts, 32µs, 2% Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold	Original	PDF	MDS400 MDS400
Untitled Abstract: No abstract text available Text: TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The	Original	PDF	25oC2
TPR400 Abstract: max7540 Text: TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The	Original	PDF	25oC2 TPR400 TPR400 max7540
transistor C128 Abstract: c128 transistor 28c128 C1-28Z transistor c1-28 GHZ TECHNOLOGY C1-28 55FT Text: C1-28/C1-28Z 1 Watts - 28 Volts, Class C Defcom 400 MHz GENERAL DESCRIPTION CASE OUTLINE The C1-28 / Z is a COMMON EMITTER transistor capable of providing1 Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This transistor is designed for Class AB or C amplifier applications. It utilizes	Original	PDF	C1-28/C1-28Z C1-28 150oCNDS transistor C128 c128 transistor 28c128 C1-28Z transistor c1-28 GHZ TECHNOLOGY 55FT
Motorola AN222A Abstract: MJ10023 1N4937 sps transistor Text: MOTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS 250 WATTS	Original	PDF	MJ10023/D MJ10023 MJ10023 DeviceMJ10023/D Motorola AN222A 1N4937 sps transistor
MJ423 Abstract: mj423 motorola MOTOROLA TRANSISTOR Text: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA MJ423 High-Voltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits.	Original	PDF	MJ423/D MJ423 mj423 motorola MOTOROLA TRANSISTOR
BU208A equivalent Abstract: BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ13333  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching	Original	PDF	MJ13333 MJ13333 AMP32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU208A equivalent BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330
100MIL Abstract: FERRITE TOROID Johanson Piston Trimmer indiana general UDR-500 udr 70 F624-19 l44 transistor Text: UDR-500 500 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The UDR-500 is an internally matched, COMMON EMITTER transistor capable of providing 500 Watts of pulsed RF output power at sixty microseconds pulse width, two percent duty factor across the band 400-450	Original	PDF	UDR-500 UDR-500 100MIL) 180pf, 470pf, 100MIL FERRITE TOROID Johanson Piston Trimmer indiana general udr 70 F624-19 l44 transistor
MARKING TRANSISTOR T44 Abstract: MPSA44 Text: CHENMKO ENTERPRISE CO.,LTD CHT44PT SURFACE MOUNT NPN High Voltage Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Video out to drive color CRT * Other high voltage applications. SOT-23 * NPN High Voltage Transistor .066 1.70 CONSTRUCTION .110 (2.80)	Original	PDF	CHT44PT OT-23 OT-23) 500mA) MPSA44 10MHz MARKING TRANSISTOR T44 MPSA44
CHT44GP Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD CHT44GP SURFACE MOUNT NPN High Voltage Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Video out to drive color CRT * Other high voltage applications. SOT-23 * NPN High Voltage Transistor .066 1.70 CONSTRUCTION .110 (2.80)	Original	PDF	CHT44GP OT-23 OT-23) 500mA) MPSA44 10MHz CHT44GP

MJ10005 equivalent Abstract: MJ10005 transistor mj10005 1N4937 MJ10004 Text: ON Semiconductort MJ10005 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for high–voltage,	Original	PDF	MJ10005 MJ10005 100Nlit r14525 MJ10005/D MJ10005 equivalent transistor mj10005 1N4937 MJ10004
UMIL10P Abstract: No abstract text available Text: R.3.070799 UMIL10P 10 Watts, 28 Volts, Class AB UHF Communications 100 – 400 MHz CASE OUTLINE 55FU Style 2 GENERAL DESCRIPTION The UMIL10P is a COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in	Original	PDF	UMIL10P UMIL10P 200mA
6DI15S-050 Abstract: 1DI300ZP-120 m114 1di200 6DI20MS-050 M615 Text: /\°7 —t / W X / Power Devices • v ,:i~ J t' PowerTransistor Modules Power transistor modules with zener diode for snubber circuit Vcso V ceo tc Votts sus Votts Com Amps 300 400 400 300 300 400 400 1DI300MN-050 1DI400MN-050 1DI400MP-050 1DI300MN-120	OCR Scan	PDF	1DI300MN-050 1DI400MN-050 1DI400MP-050 1DI300MN-120 1DI300MP-120 1DI400MN-120 1DI400MP-120 1DI200ZN-120 1DI200ZP-120 1DI300ZN-120 6DI15S-050 1DI300ZP-120 m114 1di200 6DI20MS-050 M615
transistor s72 Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62 Text: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power	OCR Scan	PDF	KS621K40A41 Amperes/1000 transistor s72 S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
transistor TE 901 equivalent Abstract: transistor TE 901 IGT6D11 IGT6E11 Text: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and	OCR Scan	PDF	IGT6D11 6D11- transistor TE 901 equivalent transistor TE 901 IGT6E11
IGT8D21 Abstract: IGT8E21 Text: csrifBAiMiiisro^ IGT8D21.E21 2CI AMPERES 400, 500 VOLTS EQUIV. FiDS ON = 0.145 i l Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and	OCR Scan	PDF	IGT8D21 60Msec, IGT8E21
0105-50 Abstract: Scans-00115685 Text: 0182998 ACRIAN GENERAL 97D 0 1156 INC 0104-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-400 MHz The 0104-100 balanced transistor is specifically designed for wideband operation from 100-400 MHz. It may be operated Class A, AB or C. Gold metalization and silicon	OCR Scan	PDF	-T-33-15 -65to Vcc-28V T-33-15 0105-50 Scans-00115685
transistor k 4212 Abstract: of transistor C 4212 KS624540 K10-43 k1043 transistor 600 volts 60 amperes powerex ks62 diode S62 Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/600 Volts O UTLINE DRAWING Description: The Powerex High-Beta Single Darlington Transistor Modules are high power devices designed for	OCR Scan	PDF	Amperes/600 KS624540 transistor k 4212 of transistor C 4212 KS624540 K10-43 k1043 transistor 600 volts 60 amperes powerex ks62 diode S62
K105 transistor Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11 Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and	OCR Scan	PDF	IGT4D11 K105 transistor transistor k105 IGT4E11 IGT-4E11
s75 transistor Abstract: KS621240 powerex ks62 transistor b 1417 Text: fOMCREX KS621240 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SítlCflB DâTHnCftOn Transistor Module 400 Amperes/1200 Volts O U T L IN E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power	OCR Scan	PDF	KS621240 Amperes/1200 s75 transistor KS621240 powerex ks62 transistor b 1417

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TRANSISTOR 400 VOLTS Search Results

TRANSISTOR 400 VOLTS Result Highlights (5)

TRANSISTOR 400 VOLTS Datasheets Context Search

MJ423

Untitled

1N4001 transistor free

BC337 rbe

MDS400

Untitled

TPR400

transistor C128

Motorola AN222A

MJ423

BU208A equivalent

100MIL

MARKING TRANSISTOR T44

CHT44GP

MJ10005 equivalent

UMIL10P

6DI15S-050

transistor s72

transistor TE 901 equivalent

IGT8D21

0105-50

transistor k 4212

K105 transistor

s75 transistor