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    TRANSISTOR 3BT Search Results

    TRANSISTOR 3BT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3BT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 3bt

    Abstract: marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor BC856BW
    Text: Central BC856W SERIES BC857W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface


    Original     		PDF BC856W BC857W OT-323 BC857W 200Hz BC856AW BC857AW BC856BW transistor 3bt marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor

    transistor 3bt

    Abstract: marking 3ft sot323 transistor 3et transistor 3Ft 3Ft sot marking code 200a 3Ft transistor BC857BW BC856BW
    Text: BC856W SERIES BC857W SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package,


    Original     		PDF BC856W BC857W OT-323 100MHz 200Hz BC856BW BC857BW BC856AW transistor 3bt marking 3ft sot323 transistor 3et transistor 3Ft 3Ft sot marking code 200a 3Ft transistor

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers


    OCR Scan     		PDF DD315 BFQ54T BFQ34T. 0031ST4 BB339

    BFQ34T

    Abstract: BFQ54T philips MATV amplifiers 25c2570 Philips MBB MBB339 638 transistor
    Text: Philips Semiconductors bbS3^3]i 0 0 3 1 5 ^ 1 3bT BBAPX Product specification PNP 4 GHz wideband transistor ^ ^ N DESCRIPTION A ME R BFQ54T P H IL IP S /D IS C R E T E b^E ]> PINNING PNP transistor in a plastic SOT37 package. PIN It is primarily intended for use in


    OCR Scan     		PDF BFQ54T BFQ34T. D31SCÃ BFQ54T MBB339 BFQ34T philips MATV amplifiers 25c2570 Philips MBB MBB339 638 transistor

    BLw76a

    Abstract: BLW76 BD433 74412
    Text: N AMER PHILIPS/DISCRETE b*ìE » • hb53T31 D a E ^ b b 772 ■ APX tSLW 76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transm itters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­


    OCR Scan     		PDF hb53T31 BLw76a BLW76 BD433 74412

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TLP733,734 GaAs IRED a PHOTO-TRANSISTOR TLP733 OFFICE M ACHINE. HOUSEHOLD USE EQUIPM ENT. SOLID STATE R ELA Y. SWITCHING POW ER SUPPLY. The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a


    OCR Scan     		PDF TLP733 TLP733) TLP734 UL1577, E67349 BS415 BS7002 EN60950)

    TT 2222

    Abstract: No abstract text available
    Text: N AMER PHIL IPS/D ISCR ETE btiS3T31 DDSTOMS STb I IAPX B LV 45/12 b'lE D V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optimum temperature profile


    OCR Scan     		PDF btiS3T31 OT-119) BLV45/12 TT 2222

    B5G1

    Abstract: BSS138
    Text: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products


    OCR Scan     		PDF BSS138 OT-23 B5G1 BSS138

    Transistor 78 L 05

    Abstract: 2N2223A 2N2453 2N2453A 2N2639 2N2919 2N2642 2N2060 2N2223 2N2480A
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 Jgr / DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920


    OCR Scan     		PDF 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 Transistor 78 L 05 2N2919

    transistor 3bt

    Abstract: No abstract text available
    Text: KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit TO -92 Driver circuit • Built in bias Resistor (R,=10Kil, R2=47KR) • Com plement to KSR2006 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KSR1006 10Kil, KSR2006 Clb4142 transistor 3bt

    2N2919

    Abstract: 2N2642
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920


    OCR Scan     		PDF 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2919

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation


    OCR Scan     		PDF 10kiJ, Q62702-C2495 OT-363

    BCX71RG

    Abstract: BCW61RA BCW61RD BCW61 BCX71 BCW61R transistor marking bh ra BCW60 BCW61A BCW61B
    Text: ITT SEMICON] / INTERMETALL SOE » 4bfl2711 D002L00 714 BCW 61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF am plifier applications. H Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,


    OCR Scan     		PDF BCW61, BCX71 D002L00 BCW61 BCX71 BCW60 BCX70 BCW61R BCX71RG BCW61RA BCW61RD transistor marking bh ra BCW61A BCW61B

    2N329A

    Abstract: 2N328A JAN MIL-S-18500 2N328A 2N329A JAN ic tba 507 a
    Text: MIL-S- 19500/ 110C li m i irr? SUPERSEDING MIL-6- 19500/ HOB 8 November 1965 MUJTARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N328A AND 2N329A Thla specification Is mandatary for uac by all Departmenta and Agende» of the Department of Deiena«.


    OCR Scan     		PDF MIL-6-19500/HOC MXL-6-19500/110B 2N328A 2N329A 2N328A) 2N329A) 2N329A 2N328A JAN MIL-S-18500 2N329A JAN ic tba 507 a

    SmD TRANSISTOR 42T

    Abstract: smd 42t
    Text: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100


    OCR Scan     		PDF O-220 BUZ100 C67078-S1348-A2 6235bDS SmD TRANSISTOR 42T smd 42t

    iw 1688

    Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331
    Text: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency


    OCR Scan     		PDF GG350bfci BFS540 OT323 UBC870 OT323. collect-176 iw 1688 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331

    STT 3 SIEMENS

    Abstract: TRANSISTOR 2FE ScansUX7 C67078-A3209-A2
    Text: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 384 Vds 500 V DS on 10.5 A 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage ^DS V DGR Drain-gate voltage


    OCR Scan     		PDF O-218AA C67078-A3209-A2 fl23SbOS 6235b05 STT 3 SIEMENS TRANSISTOR 2FE ScansUX7

    BCW61RA

    Abstract: bcx71 bcx71rh BCX71C BCW60
    Text: ITT seuicond/ intermetall SGE D 4bô2711 D002bGQ 714 BCW61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. i i” n is 1 ! 4H P- Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,


    OCR Scan     		PDF BCW61, BCX71 BCW61 BCX71 BCW60 BCX70 BCW61R BCX71R. BCW61RA bcx71rh BCX71C

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


    OCR Scan     		PDF 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922

    Untitled

    Abstract: No abstract text available
    Text: 7 1 1 0 0 2 b O C I b ^m a Philips Sem iconductors 2T2 RHIN Product specification NPN 6 GHz wideband transistor FEATURES BFR93A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2 emitter • PNP complement is the BFT93.


    OCR Scan     		PDF BFR93A BFT93.

    AN5296 Application of the CA3018 Integrated

    Abstract: TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY
    Text: HARRIS SEflICOND SECTOR blE D • 43DP271 004703S bSG H H A S CA3146, CA3183 33 H a r r i s S E M I C O N D U C T O R ■ W » W W High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors • VBE Matched ±5mV Max


    OCR Scan     		PDF 43DP271 004703S CA3146, CA3183 CA3146A, CA3183A, CA3183* A3146A CA3146 AN5296 Application of the CA3018 Integrated TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY

    C4023

    Abstract: STP40N05 STP40N05FI GC286
    Text: 7 cî2cî237 0 0 m 34bT T B 1? • S G T H SGS-THOMSON STP40N05 STP40N05FI üO T@ KS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP40N05 STP40N05FI ■ . ■ ■ . ■ ■ . V dss R öS on Id 50 V 50 V < 0.035 Q < 0.035 Q 40 A 23 A TYPICAL RDS(on) = 0.03 i l


    OCR Scan     		PDF 004b4b STP40N05 STP40N05FI STP40N05 STP40N05FI D04Li47S STP40N05/FI C4023 GC286

    Untitled

    Abstract: No abstract text available
    Text: r z Ä 7 S C S - T H O T # M S O N r a ig ^ lIU lC T ^ O iD iE l S T B 7 N A 4 0 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB7NA40 V dss RDS on Id 400 V < 1Q 6.5 A . . . . • . . . TYPICAL Ros(on) = 0.82 £2 ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF STB7NA40 O-262) O-263) O-263 O-262