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    TRANSISTOR 3609 Search Results

    TRANSISTOR 3609 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3609 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    plessey SL360

    Abstract: SL360G SL360 SL362 SL362C cm8 transistor
    Text: ADVANCE INFORMATION DS3625 - 1.1 SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as monolithic silicon devices. They feature accurate parameter matching and close thermal


    Original     		PDF DS3625 SL360G SL362C SL360G SL362C 60MHz) SL360 SL362 SL360) plessey SL360 cm8 transistor

    SL360G

    Abstract: plessey SL360
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3625 - 1.1 SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as monolithic silicon devices.


    Original     		PDF DS3625 SL360G SL362C SL360G SL362C 60MHz) plessey SL360

    SL362

    Abstract: SL362C SL360 SL360G
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3625 - 1.1 SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as monolithic silicon devices.


    Original     		PDF DS3625 SL360G SL362C SL360G SL362C 60MHz) SL362 SL360

    DS3629

    Abstract: MP14 SL3045 SL3145 SL3245
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3629 - 1.3 SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a monolithic array of five high frequency low current NPN transistors. The SL3245 consists of 3 isolated


    Original     		PDF DS3629 SL3245 SL3245 SL3045 SL3145. MP14 SL3045 SL3145

    transistor 3609

    Abstract: zarlink modem ca3046 sl3145 MP14 SL3145C
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3627 - 1.3 SL3145 1.6GHz NPN TRANSISTOR ARRAYS The SL3145 is a monolithic array of five high frequency low current NPN transistors. The SL3145 consists of 3 isolated


    Original     		PDF DS3627 SL3145 SL3145 CA3046. transistor 3609 zarlink modem ca3046 MP14 SL3145C

    DS3629

    Abstract: SL3145 MP14 SL3045 SL3245
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3629 - 1.3 SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a monolithic array of five high frequency low current NPN transistors. The SL3245 consists of 3 isolated


    Original     		PDF DS3629 SL3245 SL3245 SL3045 SL3145. SL3145 MP14 SL3045

    Untitled

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3627 - 1.3 SL3145 1.6GHz NPN TRANSISTOR ARRAYS The SL3145 is a monolithic array of five high frequency low current NPN transistors. The SL3145 consists of 3 isolated


    Original     		PDF DS3627 SL3145 SL3145 CA3046.

    DS3629

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3629 - 1.3 SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a monolithic array of five high frequency low current NPN transistors. The SL3245 consists of 3 isolated


    Original     		PDF DS3629 SL3245 SL3245 SL3045 SL3145.

    CA3127

    Abstract: DS3628 SL3127 SL3227
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3628 - 1.3 SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The


    Original     		PDF DS3628 SL3227 SL3227 CA3127 SL3127. CA3127 SL3127

    Untitled

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3628 - 1.3 SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The


    Original     		PDF DS3628 SL3227 SL3227 CA3127 SL3127.

    SL3127

    Abstract: CA3127 DS3628 SL3227 plessey SL3127
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3628 - 1.3 SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The


    Original     		PDF DS3628 SL3227 SL3227 CA3127 SL3127. SL3127 CA3127 plessey SL3127

    DS3629

    Abstract: SL3045 SL3245 transistor 3609 sl3145 MP14 GEC Plessey SL324
    Text: DS3629 - 1.3 SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a monolithic array of five high frequency low current NPN transistors. The SL3245 consists of 3 isolated transistors and a differential pair in a 14 lead SO package. The transistors exhibit typical fT of 3GHz and wideband noise


    Original     		PDF DS3629 SL3245 SL3245 SL3045 SL3145. SL3045 transistor 3609 sl3145 MP14 GEC Plessey SL324

    transistor 3609

    Abstract: SL3127 CA3127 DS3628 SL3227 plessey SL3127 IC GEC SL322
    Text: DS3628 - 1.3 SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical fT of 3GHz and wideband noise figures of 2dB. The SL3227 is pin compatible with the CA3127


    Original     		PDF DS3628 SL3227 SL3227 CA3127 SL3127. transistor 3609 SL3127 CA3127 plessey SL3127 IC GEC SL322

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION DS3627 - 1.3 SL3145 1.6GHz NPN TRANSISTOR ARRAYS The SL3145 is a monolithic array of five high frequency low current NPN transistors. The SL3145 consists of 3 isolated transistors and a differential pair in a 14 lead SO package The transistors exhibit typical fTS of 1.6GHz and wideband noise


    Original     		PDF DS3627 SL3145 SL3145 CA3046.

    sl3145

    Abstract: ca3046 GEC Plessey Semiconductors NPN Monolithic Transistor Pair MP14 transistor 3609
    Text: ADVANCE INFORMATION DS3627 - 1.3 SL3145 1.6GHz NPN TRANSISTOR ARRAYS The SL3145 is a monolithic array of five high frequency low current NPN transistors. The SL3145 consists of 3 isolated transistors and a differential pair in a 14 lead SO package The transistors exhibit typical fTS of 1.6GHz and wideband noise


    Original     		PDF DS3627 SL3145 SL3145 CA3046. ca3046 GEC Plessey Semiconductors NPN Monolithic Transistor Pair MP14 transistor 3609

    MA9264

    Abstract: MA92 CS209
    Text: MARCH 1995 MA9264 ADVANCE DATA DS3692-5.1 MA9264 RADIATION HARD 8192 x 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with


    Original     		PDF MA9264 DS3692-5 MA9264 8192x8 MA92 CS209

    full adder circuit using nor gates

    Abstract: D-latch DIL40 DIL48 half adder ttl half adder circuit using nor and nand gates microprocessor radiation hard datasheet SRDL DIL14 DIL16
    Text: MA9000 Series MAY 1995 DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal CMOS/SOS gate arrays is a four transistor ‘cell-unit’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the


    Original     		PDF MA9000 DS3598-3 full adder circuit using nor gates D-latch DIL40 DIL48 half adder ttl half adder circuit using nor and nand gates microprocessor radiation hard datasheet SRDL DIL14 DIL16

    Zener Diode 3v 400mW

    Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
    Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –


    Original     		PDF DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998

    Untitled

    Abstract: No abstract text available
    Text: _ _ _ N AUER PHILIPS/DISCRETE _ ! i_ _ OLE I> • 0 8 0 0 1 3 0 AMPEREX, H IC K SVILLE 86D 0 1 80 8 D T-33-05 ^53131 00m04b b | BLX91CB SILICON PUNAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor primarily designed fo r use in fast-switching wide-band video


    OCR Scan     		PDF T-33-05 00m04b BLX91CB OT-48/3. 7Z92365

    BLX91CB

    Abstract: IEC134 transistor 3609 amperex vc 100
    Text: N AMER P H I L I P S / D ISC RETE ObE_ I> Ü 1^53 ^31 0 01404 t, b • 0800130 AMPEREX, HICKSVILLE _ 86D 01808 D 'T ~ 3 3 - ô $ II BLX91CB SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor primarily designed fo r use in fast-switching wide-band video


    OCR Scan     		PDF oq14g4b blx91cb OT-48/3. BLX91CB IEC134 transistor 3609 amperex vc 100

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    transistor BFT 95

    Abstract: transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor
    Text: TELEFUNKEN ELECTRONIC SIC D ▼ • 812001b 000531!, 8 «ALG S T~3/-'~ m iBraaBSIEI» electronic BPr qB B FT 95 i Creative Technologies Silicon PNP Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier !


    OCR Scan     		PDF 000531b ft-11 569-GS 000s154 hal66 if-11 transistor BFT 95 transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor

    op amp 741 model PSpice

    Abstract: pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 transistor 2x MM1008 DN660 me 4946 operational amplifier discrete schematic
    Text: Q PLESSEY FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Semicustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro­ cess allowing for operation at voltages up to 20V. Typical circuit blocks for the MM series include pre-amplifiers, com­


    OCR Scan     		PDF PS2314, op amp 741 model PSpice pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 transistor 2x MM1008 DN660 me 4946 operational amplifier discrete schematic

    chip die npn transistor

    Abstract: MM1007
    Text: 0PLESSEY FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Semicustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro­ cess allowing for operation at voltages up to 20V. Typical circuit blocks for the MM series include pre-amplifiers, com­


    OCR Scan     		PDF PS2314, chip die npn transistor MM1007