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    TRANSISTOR 331 8 Search Results

    TRANSISTOR 331 8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 331 8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12S10

    Abstract: C67078-S3114-A2 331 transistor
    Text: BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 331 500 V 8A 0.8 Ω TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		PDF O-218 C67078-S3114-A2 12S10 C67078-S3114-A2 331 transistor

    C67078-S3114-A2

    Abstract: No abstract text available
    Text: BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 331 500 V 8A 0.8 Ω TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		PDF O-218 C67078-S3114-A2 C67078-S3114-A2

    phototransistor 650 nm

    Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor
    Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features


    Original     		PDF Q62702-P1634 OHF01924 GPL06924 phototransistor 650 nm Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor

    transistor h 331

    Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
    Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features


    Original     		PDF 331-JK Q62702-P1634 GPLY6924 transistor h 331 c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm

    c 331 transistor

    Abstract: transistor d 331 331 transistor fototransistor led phototransistor 650 nm d 331 TRANSISTOR equivalent GPL06924 Q62702-P1634 switching transistor 331 transistor C 331
    Text: SMT Multi TOPLED SFH 331 3.0 2.6 2.3 2.1 0.9 0.7 3 C C E 0.1 typ 1.1 0.5 3.4 3.0 A 3.7 3.3 2 2.4 0.8 0.6 2.1 1.7 1 4 0.18 0.12 Package marking Emission color : super-red 0.6 0.4 GPL06924 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    Original     		PDF GPL06924 Q62702-P1634 IPCE/IPCE25o OHF00871 OHF01530 OHF01924 c 331 transistor transistor d 331 331 transistor fototransistor led phototransistor 650 nm d 331 TRANSISTOR equivalent GPL06924 Q62702-P1634 switching transistor 331 transistor C 331

    8060 transistor

    Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
    Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,


    Original     		PDF 8060-1G11 8060-1G6 MIL-S-83502/2 MIL-S-83502/5. 8060 transistor 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45

    transistor d-331

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF 331-JK Q65110A2821 transistor d-331

    DF 331 TRANSISTOR

    Abstract: D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor
    Text: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 331 l/bs 500 V fa 8A ^%S on 0 .8 » Package Ordering Code TO-218AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan     		PDF O-218AA C67078-S3114-A2 00--------V O-218AA DF 331 TRANSISTOR D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor

    transistor B A O 331

    Abstract: D F 331 TRANSISTOR
    Text: SIEMENS BUZ 331 SIPMOS Power Transistor Type BUZ 331 CO i • N channel • Enhancement mode • Avalanche rated 500 V Id Tc ^DS on Package 1> Ordering Code 8.0 A 35 ’C 0.8 Q TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-218 C67078-S3114-A2 SILO3821 transistor B A O 331 D F 331 TRANSISTOR

    DF 331 TRANSISTOR

    Abstract: transistor df 331
    Text: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type l/bs b f l DS on Package Ordering Code BUZ 331 500 V 8A 0.8 n TO-218 AA C67078-S3114-A2 Maxim um Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan     		PDF O-218 C67078-S3114-A2 fi23SbD5 Gfl47b7 0Dfi47bà DF 331 TRANSISTOR transistor df 331

    s3331

    Abstract: No abstract text available
    Text: N AMFR PHILIPS/DISCRETE b'lE P bbSBT31 0026333 331 « A P X Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated


    OCR Scan     		PDF bbSBT31 BU1508DX bb53T31 S3331 DD2fl33fl

    transistor 21Y

    Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
    Text: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements


    OCR Scan     		PDF /331A MIL-S-19500/ 2N1553A 2N1556A 2N1554A 2N1555A 2N1556A transistor 21Y 2N1556 TRANSISTOR 3052 2N1555 J717 2N1553

    npn transistor dc 558

    Abstract: BFQ22S transistor dc 558 npn BFQ24 Transistor 5331 BFQ22
    Text: Philips Semiconductors • ^ 53*331 Q O B IS Ü T 4 4 e! M APX Product specification NPN 6 GHz wideband transistor " ■111,1 BFQ22S b'IE J> N AMER PHILIPS/DISCRETE DESCRIPTION PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the


    OCR Scan     		PDF BFQ22S BFQ24. bb53c131 DD3151S BFQ22S npn transistor dc 558 transistor dc 558 npn BFQ24 Transistor 5331 BFQ22

    2U37

    Abstract: BU2520af BY228 TRANSISTOR BO 345
    Text: N AMER PHILIPS/DISCRETE b^E D Bi t,bS3*331 DDEöBbR 5*14 « A P X Philips Semiconductors _ ProductSpec Silicon Diffused Power Transistor BU2520AF G E N E R A L D ESC RIPTIO N New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in


    OCR Scan     		PDF BU2520AF OT199; 2U37 BU2520af BY228 TRANSISTOR BO 345

    BUK657

    Abstract: BUK657-400A BUK657-400B T0220AB IRF FET
    Text: N AMER PHILIPS/DISCRETE 2SE D m ^53=331 □□2070Ü 7 PowerMOS transìstor Fast Recovery Diode FET BUK657-400A BUK657-400B T - 3 7 -/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		PDF BUK657-400A BUK657-400B T-37-/3 BUK657 -40QA -400B BUK657-400B T0220AB IRF FET

    philips bfq

    Abstract: BFQ263 BFQ263A RK 100
    Text: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with


    OCR Scan     		PDF BFQ263; BFQ263A 711062b 0045bi 711Qfl2b T-33-05 philips bfq BFQ263 BFQ263A RK 100

    mosfet J 3305

    Abstract: 221A-06 72SM AN569 MTP7P06 TMOS Power FET
    Text: MOTOROLA SC XSTRS/R F bf i E D • b3t.72SM QDTflbTT 331 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP7P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 7 AMPERES This TMOS Power FET is designed for medium voltage,


    OCR Scan     		PDF MTP7P06 b3b7254 0CHfl703 mosfet J 3305 221A-06 72SM AN569 MTP7P06 TMOS Power FET

    BSP108

    Abstract: transistor marking ST4
    Text: • ^53*331 OOaSMTÛ STM H A P X N AMER PHILIPS/DISCRETE BSP108 b?E » J ' - N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode ve rtica l D-MOS tran sisto r in a m in ia tu re S O T 223 envelope and intended


    OCR Scan     		PDF BSP108 OT223 BSP108 transistor marking ST4

    BC369

    Abstract: TRANSISTOR bH Silicon Epitaxial Planar Transistor philips
    Text: I 1 N AUER P H I L I P S / D I S C R E T E L I E J> ^53*331 D027S43 152 H A P X BC369 I SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO -92 envelope, intended for low-voltage, high-current LF applications. BC 368/B C 369 is the matched complementary pair suitable for class-B output stages up to 3 W.


    OCR Scan     		PDF D027S43 BC369 BC368/BC369 BC369 TRANSISTOR bH Silicon Epitaxial Planar Transistor philips

    C 331 Transistor

    Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331
    Text: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.


    OCR Scan     		PDF O-116 14-lead C 331 Transistor transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331

    transistor h 331

    Abstract: D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led
    Text: SIEMENS SMT Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code SFH 331 Q62702-P1634 W esentliche Merkmale • Geeignet für Vapor-Phase Löten und IR-Reflow Löten


    OCR Scan     		PDF Q62702-P1634 hotocurrent/pCE//pCE250 transistor h 331 D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led

    D F 331 TRANSISTOR

    Abstract: No abstract text available
    Text: SIEM ENS SM T Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code S F H 331 Q 62702-P1634 Wesentliche Merkmale • Geeignet für V apor-Phase Löten und IR-Reflow Löten


    OCR Scan     		PDF 62702-P1634 /pCE//pCE250 D F 331 TRANSISTOR

    transistor 373

    Abstract: 8060 transistor
    Text: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe


    OCR Scan     		PDF 8060-1G11 8060-1G6 MIL-S-83502/2 M1L-S-83502/5. transistor 373 8060 transistor

    2SD1859

    Abstract: transistor 2sb1238 2SB1238
    Text: 2SD1859 Transistor, NPN Features Dimensions Units : mm • • • available in ATV TV2 package high power: Pq = 1 W high breakdown voltage and large current capacity: VCEO = 80 V, lc = 700 mA • complementary pair with 2SB1238 Applications • medium power amplifier


    OCR Scan     		PDF 2SD1859 28D1859 2SB1238 2SD1859 transistor 2sb1238