transistor 3203
Abstract: AN3203 APP3203 MAX7409 MAX966 3203
Text: Maxim/Dallas > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS FILTER CIRCUITS ANALOG Keywords: lowpass filter, step response, time-domain response, signal conditioning, switched-capacitor filter, SC filter Apr 26, 2004 APPLICATION NOTE 3203 Lowpass Filter Has Improved Step Response
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fOSC/100.
com/an3203
MAX7409:
MAX966:
AN3203,
APP3203,
Appnote3203,
transistor 3203
AN3203
APP3203
MAX7409
MAX966
3203
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2SD2116
Abstract: No abstract text available
Text: Ordering number:EN3203 NPN Epitaxial Planar Silicon Transistor 2SD2116 General Driver Applications Features Package Dimensions • Darlington connection. · High DC current gain. · Large current capacity, wide ASO. unit:mm 2064A [2SD2116] 2.5 1.45 1.0 1.0
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EN3203
2SD2116
2SD2116]
2SD2116
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transistor 3205 equivalent
Abstract: data sw 3205 microwave Duplexer pdc 140m FET 3205 LM3200 LM3202 LM3203 LM3204 LM3205
Text: Powering RF Power Amplifiers with Magnetic Buck Converters Mathew Jacob Hello and welcome to today’s National Semiconductor Online Seminar. I’m Michelle Miller and I will be your host. Before we begin, I’d like to go over the operation of your seminar
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VP3203N3-G
Abstract: No abstract text available
Text: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP3203 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP3203
VP3203
O-243AA
OT-89)
O-243,
DSFP-VP3203
A020408
VP3203N3-G
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Untitled
Abstract: No abstract text available
Text: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability
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VP3203
VP3203
DSFP-VP3203
A042709
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SmartDie
Abstract: 240486 Intel486TM PROCESSOR FAMILY 242202
Text: A PRELIMINARY EMBEDDED ULTRA-LOW POWER Intel486 GX PROCESSOR SmartDie™ Product Specification • Ultra-Low Power Member of the Intel486™ Processor Family — 32-Bit RISC Technology Core — 8-Kbyte Write-Through Cache — Four Internal Write Buffers
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Intel486TM
32-Bit
16-Bit
SmartDie
240486
Intel486TM PROCESSOR FAMILY
242202
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tms 3631 an
Abstract: tms 3631 240486 A 2497 50 1084 1 transistor d30 Intel486TM PROCESSOR FAMILY SmartDie
Text: A PRELIMINARY EMBEDDED ULTRA-LOW POWER Intel486 SX PROCESSOR SmartDie™ Product Specification • Ultra-Low Power Member of the Intel486™ Processor Family — 32-Bit RISC Technology Core — 8-Kbyte Write-Through Cache — Four Internal Write Buffers
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Intel486TM
32-Bit
16-bit
X80486SXSF-33
tms 3631 an
tms 3631
240486
A 2497
50 1084 1
transistor d30
Intel486TM PROCESSOR FAMILY
SmartDie
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12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM
Abstract: Capacitor X7R 100n 50V 1206 zener smd diode 16v 1w uCapacitor X7R 100n 50V 1206u class D audio power amplifier phillips 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM NO USED IC 22u smd capacitor 1u 63V BTL audio 50W pot 100K smd
Text: ZXCD50STEVAL 50W CLASS D AUDIO AMPLIFIER EVALUATION BOARD DESCRIPTION FEATURES • Stereo The ZXCD50STEVAL evaluation board is based on the ZXCD1000 Class D audio amplifier solution from Zetex. This board allows the user to evaluate the high fidelity audio performance offered by the Zetex solution, with
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ZXCD50STEVAL
ZXCD50STEVAL
ZXCD1000
12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM
Capacitor X7R 100n 50V 1206
zener smd diode 16v 1w
uCapacitor X7R 100n 50V 1206u
class D audio power amplifier phillips
12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM NO USED IC
22u smd
capacitor 1u 63V
BTL audio 50W
pot 100K smd
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NFS200-7608
Abstract: nfs50 4 pin transistor NFS200 transistor ac 127 EN55022-A S/BIP/SCB345100/B/30/NFN40
Text: NFS200 SERIES Triple and quad output Recommended for new design-ins • ■ ■ ■ ■ ■ ■ ■ 90VAC to 264VAC universal input Short circuit protection with auto-recovery Power fail detect 12VDC fan connection UL, CSA, VDE and BABT approved Cover and fan assembly
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NFS200
90VAC
264VAC
12VDC
EN55022-A
NFS200
NFS350
NFS200-7608
nfs50 4 pin transistor
transistor ac 127
EN55022-A
S/BIP/SCB345100/B/30/NFN40
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SMD Transistor 1f
Abstract: 10v ZENER DIODE 100w audio amplifier circuit diagram class D 100w audio amplifier pcb 100w mosfet audio amplifier circuit diagram 100W sub amplifier 100w audio amplifier circuit diagram per channel 12v 100w amplifier 12v 100w AUDIO AMPLIFIER CIRCUIT 100w audio amplifier circuit diagram
Text: ZXCD100MOEVAL 100W CLASS D AUDIO AMPLIFIER EVALUATION BOARD DESCRIPTION FEATURES • Class D architecture The ZXCD100MOEVAL evaluation board is based on the ZXCD1000 Class D audio amplifier solution from Zetex. This board allows the user to evaluate the high
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ZXCD100MOEVAL
ZXCD100MOEVAL
ZXCD1000
SMD Transistor 1f
10v ZENER DIODE
100w audio amplifier circuit diagram class D
100w audio amplifier pcb
100w mosfet audio amplifier circuit diagram
100W sub amplifier
100w audio amplifier circuit diagram per channel
12v 100w amplifier
12v 100w AUDIO AMPLIFIER CIRCUIT
100w audio amplifier circuit diagram
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TRANSISTOR SUBSTITUTION DATA BOOK 1993
Abstract: TRANSISTOR SUBSTITUTION DATA BOOK 1s4 spice optimized sbox schleicher
Text: Improving FPGA Performance and Area Using an Adaptive Logic Module Mike Hutton1, Jay Schleicher1, David Lewis2, Bruce Pedersen1, Richard Yuan1, Sinan Kaptanoglu1, Gregg Baeckler1, Boris Ratchev1, Ketan Padalia2, 2 Mark Bourgeault , Andy Lee1, Henry Kim1 and Rahul Saini1
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Untitled
Abstract: No abstract text available
Text: FORWARD INTERNAHONAL ELECTRONICS LID . KTA1271 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SIUCON TRANSISTOR HIGH CURRENT APPUCATION FEATURES ♦H igh H fe:H fe= 100-320 * C om plem entary to K TC 3203 ABSOLUTE MAXIMUM RATINGS at Tamb=25°C Characteristic Symbol Rating
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KTA1271
Symbo25Â
-10mAIb
-100mA
-700mA
-20mA
-10mA
-10Vfi
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3203 NPN
Abstract: 2SD2116 3203 transistor transistor 3203
Text: Ordering number: EN 3 2 0 3 No. 3203 _ 2SD2116 NPN Epitaxial P lanar Silicon Transistor General Driver Applications F eatu re s • Darlington connection • High DC current gain •Large current capacity, wide ASO A bsolute M axim um R atin g s a t Ta = 25°C
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2SD2116
3203 NPN
3203 transistor
transistor 3203
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transistor 2sc 3203
Abstract: transistor 3203 2sc3203 transistor 3203 y
Text: F SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SC 3203 (a p p lic a t io n s U n it in m m •Low F r e q u e n c y P o w e r A m plifiers [ (B-Class P u sh -p u ll, P o - l W ) ■General P u r p o s e Sw itch in g C ir c u its (f e a t u r e s )
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600mW,
800mA
500mA,
Ta-25Â
100mA
700mA
Ic-10mA
transistor 2sc 3203
transistor 3203
2sc3203
transistor 3203 y
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.
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bbS3T31
D013b3b
BLV98
OT-171
ECHANICA53T31
0013b42
BLV98
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2n4405
Abstract: 2n4404 2N4404 MOTOROLA 2n4405 motorola
Text: MOTOROLA SC XSTRS/R 1EE 0 I F L3b725«4 GüôbMia 'i | T-33-n 2N4404 2N4405 M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage v CEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc Rating Collector Current — Continuous
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L3b725
2N4404
2N4405
T-33-n
O-205AD)
2n4405
2N4404 MOTOROLA
2n4405 motorola
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Untitled
Abstract: No abstract text available
Text: NEC NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: f ï = 7 GHz The NE981 series of NPN silicon transistors is designed for microwave amplifiers up to 6 GHz and ultrahigh speed
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NE98108
NE98141
NE981
NE98141
s-117
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Untitled
Abstract: No abstract text available
Text: HFA 1120/883 & MAR , 850MHz Current Feedback Amplifier with Offset Adjust juiy 1994 Features Description • This Circuit Is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA1120/883 is a high speed, wideband, fast settling
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MIL-STD883
30MHz)
-84dBc
850MHz
50MHz)
HFA1120/883
HFA1120/883
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d 2539 transistor
Abstract: AN541 HA1-2539
Text: U U HA-2539 HARRIS S E M I C O N D U C T O R 600MHz, Very High Slew Rate Operational Amplifier N o ve m b e r 1996 Features D escription • Very High Slew R a te . 600V/ns • Open Loop
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HA-2539
600MHz,
d 2539 transistor
AN541
HA1-2539
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Diode LT 4104
Abstract: No abstract text available
Text: r r im m TECHNOLOGY LT1083/4/5-5 LT1083/4/5-12 3A, 5A, 7.5A Low Dropout Positive Fixed Regulators F€ATUA€S DCSCRIPTIOn • Three Terminal Fixed 5V and 12V ■ Output Current of 3A, 5A or 7.5A ■ Operates Down to 1V Dropout ■ Guaranteed Dropout Voltage at Multiple Current Levels
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LT1083/4/5-5
LT1083/4/5-12
LT1083
O-220
Diode LT 4104
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sda 3203
Abstract: Tuner ADR SCL SDA SDA 3202 sda 3202 prescaler N6 marking code 27110 SDA3202 SDA3203 3202 flow switch V18 marking
Text: SIEMENS SDA 3202 1.3 GHz PLL with l2C Bus • Low Current Consumption • Cost-Effective and Space-Saving Design • Message Transmission Via l2C Bus • 4 Software-Controlled Outputs • Prescaler Output Frequency is Free from Interference Radiation Pin Configuration
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Q67000-Y904
sda 3203
Tuner ADR SCL SDA
SDA 3202
sda 3202 prescaler
N6 marking code
27110
SDA3202
SDA3203
3202 flow switch
V18 marking
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ic 3202-c
Abstract: No abstract text available
Text: Tex a s In s t r u m e n t s CD4085B Types Data sheet acquired from Harris S em iconductor S C H S060 CMOS Dual 2-Wide 2-Input AND-OR-INVERT Gate High-Voltage Types 20 V o lt Rating • Noise margin, (over full packagetemperature range): 1 V at V DD = 5 V
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CD4085B
CD4085
14-lead
ic 3202-c
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Untitled
Abstract: No abstract text available
Text: Operational Am plifiers C 3 E I HARRIS UU S E M I C O N D U C T O R HARRIS RCA GE CA3410A, CA3410 INTERSIL M ay 1 9 9 0 Quad BiMOS Operational Amplifiers With M O S F E T Input, Biploar Output Features: A pp lica tio n s: • Internally com pensated m MOSFET Input Stage
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CA3410A,
CA3410
CA3410E
CA3410
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Untitled
Abstract: No abstract text available
Text: FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 6A, -100V, r[js ON = 0.660£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSS9130D,
FSS9130R
-100V,
MIL-S-19500
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