Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 3203 Y Search Results

    TRANSISTOR 3203 Y Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3203 Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 3203

    Abstract: AN3203 APP3203 MAX7409 MAX966 3203
    Text: Maxim/Dallas > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS FILTER CIRCUITS ANALOG Keywords: lowpass filter, step response, time-domain response, signal conditioning, switched-capacitor filter, SC filter Apr 26, 2004 APPLICATION NOTE 3203 Lowpass Filter Has Improved Step Response


    Original
    PDF fOSC/100. com/an3203 MAX7409: MAX966: AN3203, APP3203, Appnote3203, transistor 3203 AN3203 APP3203 MAX7409 MAX966 3203

    2SD2116

    Abstract: No abstract text available
    Text: Ordering number:EN3203 NPN Epitaxial Planar Silicon Transistor 2SD2116 General Driver Applications Features Package Dimensions • Darlington connection. · High DC current gain. · Large current capacity, wide ASO. unit:mm 2064A [2SD2116] 2.5 1.45 1.0 1.0


    Original
    PDF EN3203 2SD2116 2SD2116] 2SD2116

    transistor 3205 equivalent

    Abstract: data sw 3205 microwave Duplexer pdc 140m FET 3205 LM3200 LM3202 LM3203 LM3204 LM3205
    Text: Powering RF Power Amplifiers with Magnetic Buck Converters Mathew Jacob Hello and welcome to today’s National Semiconductor Online Seminar. I’m Michelle Miller and I will be your host. Before we begin, I’d like to go over the operation of your seminar


    Original
    PDF

    VP3203N3-G

    Abstract: No abstract text available
    Text: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP3203 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original
    PDF VP3203 VP3203 O-243AA OT-89) O-243, DSFP-VP3203 A020408 VP3203N3-G

    Untitled

    Abstract: No abstract text available
    Text: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability


    Original
    PDF VP3203 VP3203 DSFP-VP3203 A042709

    SmartDie

    Abstract: 240486 Intel486TM PROCESSOR FAMILY 242202
    Text: A PRELIMINARY EMBEDDED ULTRA-LOW POWER Intel486 GX PROCESSOR SmartDie™ Product Specification • Ultra-Low Power Member of the Intel486™ Processor Family — 32-Bit RISC Technology Core — 8-Kbyte Write-Through Cache — Four Internal Write Buffers


    Original
    PDF Intel486TM 32-Bit 16-Bit SmartDie 240486 Intel486TM PROCESSOR FAMILY 242202

    tms 3631 an

    Abstract: tms 3631 240486 A 2497 50 1084 1 transistor d30 Intel486TM PROCESSOR FAMILY SmartDie
    Text: A PRELIMINARY EMBEDDED ULTRA-LOW POWER Intel486 SX PROCESSOR SmartDie™ Product Specification • Ultra-Low Power Member of the Intel486™ Processor Family — 32-Bit RISC Technology Core — 8-Kbyte Write-Through Cache — Four Internal Write Buffers


    Original
    PDF Intel486TM 32-Bit 16-bit X80486SXSF-33 tms 3631 an tms 3631 240486 A 2497 50 1084 1 transistor d30 Intel486TM PROCESSOR FAMILY SmartDie

    12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    Abstract: Capacitor X7R 100n 50V 1206 zener smd diode 16v 1w uCapacitor X7R 100n 50V 1206u class D audio power amplifier phillips 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM NO USED IC 22u smd capacitor 1u 63V BTL audio 50W pot 100K smd
    Text: ZXCD50STEVAL 50W CLASS D AUDIO AMPLIFIER EVALUATION BOARD DESCRIPTION FEATURES • Stereo The ZXCD50STEVAL evaluation board is based on the ZXCD1000 Class D audio amplifier solution from Zetex. This board allows the user to evaluate the high fidelity audio performance offered by the Zetex solution, with


    Original
    PDF ZXCD50STEVAL ZXCD50STEVAL ZXCD1000 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM Capacitor X7R 100n 50V 1206 zener smd diode 16v 1w uCapacitor X7R 100n 50V 1206u class D audio power amplifier phillips 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM NO USED IC 22u smd capacitor 1u 63V BTL audio 50W pot 100K smd

    NFS200-7608

    Abstract: nfs50 4 pin transistor NFS200 transistor ac 127 EN55022-A S/BIP/SCB345100/B/30/NFN40
    Text: NFS200 SERIES Triple and quad output Recommended for new design-ins • ■ ■ ■ ■ ■ ■ ■ 90VAC to 264VAC universal input Short circuit protection with auto-recovery Power fail detect 12VDC fan connection UL, CSA, VDE and BABT approved Cover and fan assembly


    Original
    PDF NFS200 90VAC 264VAC 12VDC EN55022-A NFS200 NFS350 NFS200-7608 nfs50 4 pin transistor transistor ac 127 EN55022-A S/BIP/SCB345100/B/30/NFN40

    SMD Transistor 1f

    Abstract: 10v ZENER DIODE 100w audio amplifier circuit diagram class D 100w audio amplifier pcb 100w mosfet audio amplifier circuit diagram 100W sub amplifier 100w audio amplifier circuit diagram per channel 12v 100w amplifier 12v 100w AUDIO AMPLIFIER CIRCUIT 100w audio amplifier circuit diagram
    Text: ZXCD100MOEVAL 100W CLASS D AUDIO AMPLIFIER EVALUATION BOARD DESCRIPTION FEATURES • Class D architecture The ZXCD100MOEVAL evaluation board is based on the ZXCD1000 Class D audio amplifier solution from Zetex. This board allows the user to evaluate the high


    Original
    PDF ZXCD100MOEVAL ZXCD100MOEVAL ZXCD1000 SMD Transistor 1f 10v ZENER DIODE 100w audio amplifier circuit diagram class D 100w audio amplifier pcb 100w mosfet audio amplifier circuit diagram 100W sub amplifier 100w audio amplifier circuit diagram per channel 12v 100w amplifier 12v 100w AUDIO AMPLIFIER CIRCUIT 100w audio amplifier circuit diagram

    TRANSISTOR SUBSTITUTION DATA BOOK 1993

    Abstract: TRANSISTOR SUBSTITUTION DATA BOOK 1s4 spice optimized sbox schleicher
    Text: Improving FPGA Performance and Area Using an Adaptive Logic Module Mike Hutton1, Jay Schleicher1, David Lewis2, Bruce Pedersen1, Richard Yuan1, Sinan Kaptanoglu1, Gregg Baeckler1, Boris Ratchev1, Ketan Padalia2, 2 Mark Bourgeault , Andy Lee1, Henry Kim1 and Rahul Saini1


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNAHONAL ELECTRONICS LID . KTA1271 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SIUCON TRANSISTOR HIGH CURRENT APPUCATION FEATURES ♦H igh H fe:H fe= 100-320 * C om plem entary to K TC 3203 ABSOLUTE MAXIMUM RATINGS at Tamb=25°C Characteristic Symbol Rating


    OCR Scan
    PDF KTA1271 Symbo25Â -10mAIb -100mA -700mA -20mA -10mA -10Vfi

    3203 NPN

    Abstract: 2SD2116 3203 transistor transistor 3203
    Text: Ordering number: EN 3 2 0 3 No. 3203 _ 2SD2116 NPN Epitaxial P lanar Silicon Transistor General Driver Applications F eatu re s • Darlington connection • High DC current gain •Large current capacity, wide ASO A bsolute M axim um R atin g s a t Ta = 25°C


    OCR Scan
    PDF 2SD2116 3203 NPN 3203 transistor transistor 3203

    transistor 2sc 3203

    Abstract: transistor 3203 2sc3203 transistor 3203 y
    Text: F SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SC 3203 (a p p lic a t io n s U n it in m m •Low F r e q u e n c y P o w e r A m plifiers [ (B-Class P u sh -p u ll, P o - l W ) ■General P u r p o s e Sw itch in g C ir c u its (f e a t u r e s )


    OCR Scan
    PDF 600mW, 800mA 500mA, Ta-25Â 100mA 700mA Ic-10mA transistor 2sc 3203 transistor 3203 2sc3203 transistor 3203 y

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.


    OCR Scan
    PDF bbS3T31 D013b3b BLV98 OT-171 ECHANICA53T31 0013b42 BLV98

    2n4405

    Abstract: 2n4404 2N4404 MOTOROLA 2n4405 motorola
    Text: MOTOROLA SC XSTRS/R 1EE 0 I F L3b725«4 GüôbMia 'i | T-33-n 2N4404 2N4405 M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage v CEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc Rating Collector Current — Continuous


    OCR Scan
    PDF L3b725 2N4404 2N4405 T-33-n O-205AD) 2n4405 2N4404 MOTOROLA 2n4405 motorola

    Untitled

    Abstract: No abstract text available
    Text: NEC NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: f ï = 7 GHz The NE981 series of NPN silicon transistors is designed for microwave amplifiers up to 6 GHz and ultrahigh speed


    OCR Scan
    PDF NE98108 NE98141 NE981 NE98141 s-117

    Untitled

    Abstract: No abstract text available
    Text: HFA 1120/883 & MAR , 850MHz Current Feedback Amplifier with Offset Adjust juiy 1994 Features Description • This Circuit Is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA1120/883 is a high speed, wideband, fast settling


    OCR Scan
    PDF MIL-STD883 30MHz) -84dBc 850MHz 50MHz) HFA1120/883 HFA1120/883

    d 2539 transistor

    Abstract: AN541 HA1-2539
    Text: U U HA-2539 HARRIS S E M I C O N D U C T O R 600MHz, Very High Slew Rate Operational Amplifier N o ve m b e r 1996 Features D escription • Very High Slew R a te . 600V/ns • Open Loop


    OCR Scan
    PDF HA-2539 600MHz, d 2539 transistor AN541 HA1-2539

    Diode LT 4104

    Abstract: No abstract text available
    Text: r r im m TECHNOLOGY LT1083/4/5-5 LT1083/4/5-12 3A, 5A, 7.5A Low Dropout Positive Fixed Regulators F€ATUA€S DCSCRIPTIOn • Three Terminal Fixed 5V and 12V ■ Output Current of 3A, 5A or 7.5A ■ Operates Down to 1V Dropout ■ Guaranteed Dropout Voltage at Multiple Current Levels


    OCR Scan
    PDF LT1083/4/5-5 LT1083/4/5-12 LT1083 O-220 Diode LT 4104

    sda 3203

    Abstract: Tuner ADR SCL SDA SDA 3202 sda 3202 prescaler N6 marking code 27110 SDA3202 SDA3203 3202 flow switch V18 marking
    Text: SIEMENS SDA 3202 1.3 GHz PLL with l2C Bus • Low Current Consumption • Cost-Effective and Space-Saving Design • Message Transmission Via l2C Bus • 4 Software-Controlled Outputs • Prescaler Output Frequency is Free from Interference Radiation Pin Configuration


    OCR Scan
    PDF Q67000-Y904 sda 3203 Tuner ADR SCL SDA SDA 3202 sda 3202 prescaler N6 marking code 27110 SDA3202 SDA3203 3202 flow switch V18 marking

    ic 3202-c

    Abstract: No abstract text available
    Text: Tex a s In s t r u m e n t s CD4085B Types Data sheet acquired from Harris S em iconductor S C H S060 CMOS Dual 2-Wide 2-Input AND-OR-INVERT Gate High-Voltage Types 20 V o lt Rating • Noise margin, (over full packagetemperature range): 1 V at V DD = 5 V


    OCR Scan
    PDF CD4085B CD4085 14-lead ic 3202-c

    Untitled

    Abstract: No abstract text available
    Text: Operational Am plifiers C 3 E I HARRIS UU S E M I C O N D U C T O R HARRIS RCA GE CA3410A, CA3410 INTERSIL M ay 1 9 9 0 Quad BiMOS Operational Amplifiers With M O S F E T Input, Biploar Output Features: A pp lica tio n s: • Internally com pensated m MOSFET Input Stage


    OCR Scan
    PDF CA3410A, CA3410 CA3410E CA3410

    Untitled

    Abstract: No abstract text available
    Text: FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 6A, -100V, r[js ON = 0.660£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSS9130D, FSS9130R -100V, MIL-S-19500