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    TRANSISTOR 3053 Search Results

    TRANSISTOR 3053 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    RJP3053DPP-00#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3053 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AT-30533-TR1

    Abstract: AT-310 AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-30533-BLK
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA


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    PDF AT-30511 AT-30533 AT-30511: AT-30533: OT-23 OT-143 AT-30511 AT-30533 OT-23, AT-30533-TR1 AT-310 AT-30511-BLK AT-30511-TR1 AT-30533-BLK

    sot-23 marking code 352

    Abstract: AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-30533-BLK AT-30533-TR1 AT-310 AT30533
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA


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    PDF AT-30511 AT-30533 AT-30511: AT-30533: OT-23 OT-143 AT-30511 AT-30533 OT-23, sot-23 marking code 352 AT-30511-BLK AT-30511-TR1 AT-30533-BLK AT-30533-TR1 AT-310 AT30533

    2n3019 equivalent

    Abstract: 2n3019 transistor test 2N3700 "nickel cap"
    Text: 2N3019 Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and


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    PDF 2N3019 MIL-PRF-19500/391 2N3019 MIL-PRF-19500/391. T4-LDS-0185, 2n3019 equivalent 2n3019 transistor test 2N3700 "nickel cap"

    2n3057

    Abstract: No abstract text available
    Text: 2N3057A Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3057A NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and


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    PDF 2N3057A MIL-PRF-19500/391 2N3057A 2N3057 MIL-PRF-19500/391. T4-LDS-0185-1,

    6822

    Abstract: 2N3019S "nickel cap"
    Text: 2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and


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    PDF 2N3019S MIL-PRF-19500/391 2N3019S 2N3019 MIL-PRF-19500/391. T4-LDS-0185-4, 6822 "nickel cap"

    Untitled

    Abstract: No abstract text available
    Text: 2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and


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    PDF 2N3019S MIL-PRF-19500/391 2N3019S O-205AD) 2N3019 MIL-PRF-19500/391. T4-LDS-0185-4,

    2N5154U3

    Abstract: 2N5152U3 SMD-05
    Text: JANS 2N5152U3 and JANS 2N5154U3 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152U3 and 2N5154U3 silicon transistor devices are military Radiation


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    PDF 2N5152U3 2N5154U3 MIL-PRF-19500/544 2N5154U3 2N5152 2N5154. MIL-PRF-19500/544. SMD-05

    Untitled

    Abstract: No abstract text available
    Text: JANS 2N5152 and JANS 2N5154 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152 and 2N5154 silicon transistor devices are military Radiation


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    PDF 2N5152 2N5154 MIL-PRF-19500/544 2N5154 2N5154. MIL-PRF-19500/544. O-205AD) T4-LDS-0100,

    JANS2N5154

    Abstract: 2N5154U3
    Text: JANS 2N5152L and JANS 2N5154L Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152L and 2N5154L silicon transistor devices are military Radiation


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    PDF 2N5152L 2N5154L MIL-PRF-19500/544 2N5154L 2N5152 2N5154. MIL-PRF-19500/544. T4-LDS-0100-1, JANS2N5154 2N5154U3

    2N5154

    Abstract: 2N5154U3 MIL-PRF-19500 2N5154
    Text: JANS 2N5152 and JANS 2N5154 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152 and 2N5154 silicon transistor devices are military Radiation


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    PDF 2N5152 2N5154 MIL-PRF-19500/544 2N5154 2N5154. MIL-PRF-19500/544. O-205AD) T4-LDS-0100, 2N5154U3 MIL-PRF-19500 2N5154

    Untitled

    Abstract: No abstract text available
    Text: JANS 2N5152U3 and JANS 2N5154U3 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152U3 and 2N5154U3 silicon transistor devices are military Radiation


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    PDF 2N5152U3 2N5154U3 MIL-PRF-19500/544 2N5154U3 2N5152 2N5154. MIL-PRF-19500/544. T4-LDS-0100-2

    2N6351

    Abstract: No abstract text available
    Text: 2N6350 and 2N6351 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-33


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    PDF 2N6350 2N6351 MIL-PRF-19500/472 T4-LDS-0314, 2N6351

    Untitled

    Abstract: No abstract text available
    Text: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-213AA


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    PDF 2N6352 2N6353 MIL-PRF-19500/472 O-213AA T4-LDS-0315,

    2N6350

    Abstract: 2N6350 equivalent
    Text: 2N6350 and 2N6351 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-33


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    PDF 2N6350 2N6351 MIL-PRF-19500/472 T4-LDS-0314, 2N6350 equivalent

    Untitled

    Abstract: No abstract text available
    Text: 2N6298 and 2N6299 PNP Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/540 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 8 amps and is military qualified up to a JANTXV


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    PDF 2N6298 2N6299 MIL-PRF-19500/540 O-213AA O-213AA T4-LDS-0310,

    2N6650 JANTX equivalent

    Abstract: No abstract text available
    Text: 2N6648 2N6650 PNP Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/527 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at -10 amps and is military qualified up to the JANTXV


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    PDF 2N6648 2N6650 MIL-PRF-19500/527 O-204AA O-204AA 2N6648 T4-LDS-0317, 2N6650 JANTX equivalent

    Untitled

    Abstract: No abstract text available
    Text: 2N6286 and 2N6287 Available on commercial versions PNP Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/505 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 20 amps and is military qualified up to a JANTXV


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    PDF 2N6286 2N6287 MIL-PRF-19500/505 O-204AA O-204AA T4-LDS-0309,

    Untitled

    Abstract: No abstract text available
    Text: 2N7371 Available on commercial versions PNP Darlington High Power Silicon Transistor Qualified per MIL-PRF-19500/623 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high power PNP transistor is rated at 12 amps and is military qualified up to the JANTXV


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    PDF 2N7371 MIL-PRF-19500/623 O-254AA 2N7371. MIL-PRF-19500/623. T4-LDS-0318,

    2n6287

    Abstract: No abstract text available
    Text: 2N6286 and 2N6287 Available on commercial versions PNP Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/505 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 20 amps and is military qualified up to a JANTXV


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    PDF 2N6286 2N6287 MIL-PRF-19500/505 O-204AA O-204AA T4-LDS-0309, 2n6287

    IC SEM 2105

    Abstract: common emitter transistors
    Text: What H E W L E T T * miltm PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


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    PDF AT-30511 AT-30533 AT-30533 OT-23 OT-143 sAT-30511 OT-23, IC SEM 2105 common emitter transistors

    AT-30533

    Abstract: No abstract text available
    Text: ÏÏS S i HEWLETT mLEM P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


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    PDF AT-30511 AT-30533 AT-30533 OT-23 OT-143 OT-23,

    K 3053 TRANSISTOR

    Abstract: K 3053
    Text: 2N 3053 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLANAR EPITAXIAL General purpose : medium power amplification, commutation Usage généra! : am plificateur moyenne puissance, commutation. V CEO 40 V 'c 0,7 A Ptot 5 W Rth j-c 35°C/W


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    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    3053 TRANSISTOR

    Abstract: transistor 3053 2N3053
    Text: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: G eneral Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe Strom verstärkung • High current gain


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    PDF Kolle00 3053 TRANSISTOR transistor 3053 2N3053