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    TRANSISTOR 2SK2611 Search Results

    TRANSISTOR 2SK2611 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SK2611 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK2611

    Abstract: transistor 2sk2611 toshiba 2sk2611 SC-65
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


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    2SK2611 2SK2611 transistor 2sk2611 toshiba 2sk2611 SC-65 PDF

    k2611

    Abstract: toshiba transistor k2611 transistor k2611 toshiba k2611 K2611 equivalent equivalent transistor k2611 2SK2611 INFORMATION ON K2611 K2611 toshiba SC-65
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


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    2SK2611 k2611 toshiba transistor k2611 transistor k2611 toshiba k2611 K2611 equivalent equivalent transistor k2611 2SK2611 INFORMATION ON K2611 K2611 toshiba SC-65 PDF

    toshiba transistor k2611

    Abstract: K2611 toshiba K2611 transistor k2611 K2611 toshiba transistor Toshiba K2611 k2611 Transistor INFORMATION ON K2611 K261-1 k2611 a
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


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    2SK2611 toshiba transistor k2611 K2611 toshiba K2611 transistor k2611 K2611 toshiba transistor Toshiba K2611 k2611 Transistor INFORMATION ON K2611 K261-1 k2611 a PDF

    K2611

    Abstract: toshiba transistor k2611 toshiba K2611 transistor k2611 K2611 toshiba k261 K2611 circuits 2sk2611 transistor transistor Toshiba K2611
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 1.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


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    2SK2611 K2611 toshiba transistor k2611 toshiba K2611 transistor k2611 K2611 toshiba k261 K2611 circuits 2sk2611 transistor transistor Toshiba K2611 PDF

    2SK2611

    Abstract: transistor 2sk2611 2sk2611 transistor SC-65
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) l High forward transfer admittance : |Yfs| = 7.0 S (typ.)


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    2SK2611 15transportation 2SK2611 transistor 2sk2611 2sk2611 transistor SC-65 PDF

    K2611

    Abstract: transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 2SK2611 k2611 Transistor
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


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    2SK2611 K2611 transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 2SK2611 k2611 Transistor PDF

    K2543

    Abstract: MOSFET TOSHIBA 2SK MOSFET VDS 220V TO-220 equivalent 2sk2698 mosfet 2SK2996 equivalent transistor k2543 2sk2997 2SK2679 2SK2837 2sk2917
    Text: Avalanche Withstand Capability PRODUCT GUIDE Avalanche Withstand Capability Avalanc Power MOSFETs are used as high-speed switching devices in applications such as switching power supplies and DC-DC converters, where they contribute to miniaturization and lighter weight. The higher the operating frequency,


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    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


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    SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 PDF

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


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    p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122 PDF

    CEM-1 20Z

    Abstract: LT KBJ406G Fuse 250V 4al 6C3 diode ltkbj406g C259C 2SK2611 100MOhms elna 105 fuse 4al
    Text: V T- 11 5 S e r i e s A C / D C M e t a l E n c l o s e d A CUI INC COMPANY 8 " x 4 " x 2 . 0 " , 8 8 ~ 1 3 2 VA C , 11 5 W, T R I P L E O U T P U T .LOW COST, HIGH RELIABILITY .COMPACT SIZE, LIGHT WEIGHT .105ºC OUTPUT CAPACITOR .100% FULL LOAD BURN-IN TEST


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    80mVp-p 230VAC CTc31 KBJ406G 4AL/250V TF-349 CEM-1 20Z LT KBJ406G Fuse 250V 4al 6C3 diode ltkbj406g C259C 2SK2611 100MOhms elna 105 fuse 4al PDF

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


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    SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn PDF

    tb31224cf

    Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
    Text: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future


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    SCE0007A tb31224cf transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52 PDF

    2sk2611

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2 S K2 611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm


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    2SK2611 --720V) 2sk2611 PDF

    2Sk2611

    Abstract: transistor 2sk2611 TE5500 2sk2611 transistor
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2611 SILICON N CHANNEL MOS TYPE tt- M O S I I I DATA (2SK2611) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS


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    2SK2611 2SK2611) 20kil) 2SK2611 transistor 2sk2611 TE5500 2sk2611 transistor PDF

    2SK2611

    Abstract: SC-65 toshiba 2sk2611
    Text: 2SK2611 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS U nit in mm 1 5.9 M A X. • Low Drain-Source ON Resistance


    OCR Scan
    2SK2611 SC-65 toshiba 2sk2611 PDF

    k2611

    Abstract: toshiba transistor k2611 toshiba k2611 transistor k2611 2SK2611 toshiba 2sk2611 K2611 toshiba SC-65
    Text: 2SK2611 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS tt-MOSIII INDUSTRIAL APPLICATIONS Unit in mm 1 5.9 M A X. Low Drain-Source ON Resistance : Rd S (O N )-1-1^ (Typ.)


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    2SK2611 k2611 toshiba transistor k2611 toshiba k2611 transistor k2611 2SK2611 toshiba 2sk2611 K2611 toshiba SC-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low D rain-Source O N Resistance


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    2SK2611 PDF

    K2611

    Abstract: toshiba transistor k2611 toshiba k2611 transistor k2611 toshiba 2sk2611 20kO 2SK2611 K2611 toshiba SC-65
    Text: T O S H IB A 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS U n it in mm


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    2SK2611 K2611 toshiba transistor k2611 toshiba k2611 transistor k2611 toshiba 2sk2611 20kO 2SK2611 K2611 toshiba SC-65 PDF

    2SK2611

    Abstract: diode co35
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL 2SK2611 DATA SILICON N CHANNEL MOS TYPE tt- MOS I I I (2SK2611) HIGH SPEED, HIGH VO LTA G E SW ITCHIN G APPLIC A TIO N S I N D U S T R IA L A P P L IC A T I O N S U n it in mm DC-DC CONVERTER, R ELA Y DRIVE A N D M O TO R DRIVE A PPLICATIO N S


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    2SK2611 2SK2611) 100/zA 2SK2611 diode co35 PDF