Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2SC5066 Search Results

    TRANSISTOR 2SC5066 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC5066 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		PDF 2SC5066

    TOSHIBA Semiconductor Reliability Handbook derating concept and method

    Abstract: 2SC5066FT
    Text: 2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC5066FT TOSHIBA Semiconductor Reliability Handbook derating concept and method 2SC5066FT

    2SC5066

    Abstract: 2SC5066FT
    Text: 2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		PDF 2SC5066FT 25oducts 2SC5066 2SC5066FT

    transistor 2SC5066

    Abstract: 2SC5066
    Text: 2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original     		PDF 2SC5066 transistor 2SC5066 2SC5066

    2SC5066

    Abstract: TRANSISTOR 2SC5066 2SC5066 datasheet MICROWAVE TRANSISTOR
    Text: 2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		PDF 2SC5066 2SC5066 TRANSISTOR 2SC5066 2SC5066 datasheet MICROWAVE TRANSISTOR

    2SC5066FT

    Abstract: MA80240
    Text: 2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC5066FT 2SC5066FT MA80240

    Untitled

    Abstract: No abstract text available
    Text: 2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		PDF 2SC5066

    Untitled

    Abstract: No abstract text available
    Text: 2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		PDF 2SC5066

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SC5066F

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5066F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF —l.ldB , |S2lel2= 12dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC5066F 500MHz 2SC5066F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5066 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5Q66 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF - l.ldB, |S2iel2= 12dB f=lGHz 1.6 ± 0.2 0810.1 . MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC5066 2SC5Q66

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5066F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF= l.ldB, |S2le|2= 12dB f=lGHz 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5066F

    2SC5066

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5066 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2 lel 2= 12dB Unit in mm f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC5066 JEDE1200 2SC5066

    2SC5066

    Abstract: 2SC5066FT
    Text: TO SH IBA 2SC5066FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066FT VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 i e l 2 = 12dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC5066FT 0022g 2SC5066 2SC5066FT

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5066 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 1 el2= 12dB f=lG H z Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC5066

    2SC5066

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5066 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2lel2= 12dB f=lG H z Unit in mm 1.6 ± 0.2 ,0.8 ±0.1, r— :— 1 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5066 2SC5066

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5066FT TOSHIBA TRANSISTOR K f SILICON NPN EPITAXIAL PLANAR TYPE RilfifiFT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF = l.ld B , |S2 ie l2 = 12dB U n it in mm 1.2 ± 0 .0 5 f= lG H z 0.8 ± 0.05


    OCR Scan     		PDF 2SC5066FT

    2SC5066FT

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5066FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066FT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F =l.ldB , |S2lel2= 12dB f=lGHz 1.2 ± 0.05 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5066FT 25igns, 2SC5066FT

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE HN9C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C14FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES


    OCR Scan     		PDF HN9C14FT 2SC5066

    2SC5066

    Abstract: 2SC5096 HN9C22FT
    Text: TO SHIBA TENTATIVE HN9C22FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C22FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 MOUNTED DEVICES


    OCR Scan     		PDF HN9C22FT 2SC5096 2SC5066 2000MHz 1000MHz 2000MHz 500MHz 1000MHz 2SC5066 2SC5096 HN9C22FT

    2SC5066

    Abstract: HN9C14FT
    Text: TO SH IBA TENTATIVE HN9C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C14FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES


    OCR Scan     		PDF HN9C14FT 2SC5066 2SC5066 HN9C14FT

    2sc5066

    Abstract: TRANSISTOR 2SC5066 2SC5261 HN9C13FT
    Text: TO SH IBA HN9C13FT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN9C13FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ±0.1 MHIIMTFD nF\/irF<;


    OCR Scan     		PDF HN9C13FT 2SC5261 2SC5066 2sc5066 TRANSISTOR 2SC5066 HN9C13FT

    Q2123

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE HN9C22FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C22FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ±0.1 MOUNTED DEVICES


    OCR Scan     		PDF HN9C22FT 2SC5096 2SC5066 1000M 2000MHz Q2123

    2SC5066

    Abstract: 2SC5096 HN9C22FT
    Text: TO SH IBA TENTATIVE HN9C22FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C22FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES


    OCR Scan     		PDF HN9C22FT N9C22FT 2SC5096 2SC5066 2SC5066 2SC5096 HN9C22FT