TRANSISTOR 2SB669 Search Results

TRANSISTOR 2SB669 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 2SB669 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SB649AG Abstract: 2sb669 Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A Lead-free: 2SB649L/2SB649AL Halogen-free: 2SB649G/2SB649AG ORDERING INFORMATION	Original	PDF	2SB649/A 2SB669/A 2SB649L/2SB649AL 2SB649G/2SB649AG 2SB649-x-AB3-R 2SB649-x-T6C-K 2SB649-x-T60-K 2SB649-x-T92-B 2SB649-x-T92-K 2SB649-x-T9N-B 2SB649AG 2sb669
2SB669 Abstract: 2SB669A 2SB649AL 2SB649 2sb649a Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 *Pb-free plating product number:2SB649/AL ORDERING INFORMATION	Original	PDF	2SB649/A 2SB669/A O-126 2SB649/AL 2SB649-x-T60-A-K 2SB649L-x-T60-A-K 2SB649A-x-T60-A-K 2SB649AL-x-T60-A-K O-126 2SB669 2SB669A 2SB649AL 2SB649 2sb649a
2SB669 Abstract: UTC pnp transistor 2sb649 2SB669A transistor 2sb669 2sb649a Text: UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified	Original	PDF	2SB649 2SB669/A O-126 2SB649A QW-R204-006 2SB669 UTC pnp transistor 2SB669A transistor 2sb669
2SB669 Abstract: 2SB669A 2sb649 2sb649a Text: UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR . BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified	Original	PDF	2SB649 2SB669/A OT-89 2SB649A QW-R208-035 2SB669 2SB669A
2sb649 Abstract: 2sb649a 2SB669 Text: UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified	Original	PDF	2SB649 2SB669/A 2SB649A QW-R201-048 2SB669
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 1 TO-92 *Pb-free plating product number: 2SB649L/2SB649AL	Original	PDF	2SB649/A OT-89 2SB669/A O-126 2SB649L/2SB649AL 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T60-K 2SB649L-x-T60-K 2SB649-x-T92-B
Untitled Abstract: No abstract text available Text: UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified	Original	PDF	2SB649 2SB669/A 2SB649 2SB649A -150mA -500mA -600mA, -50mA
2sb669 Abstract: 2SB669A Text: UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified	Original	PDF	2SB649 2SB669/A O-126 2SB649 2SB649A -150mA -500mA -600mA, 2sb669 2SB669A
2SB669 Abstract: 2SB649AL 2SB669A 2SB649 2SB649A 126-C Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 1 TO-126C 1 TO-92 *Pb-free plating product number: 2SB649L/2SB649AL	Original	PDF	2SB649/A OT-89 2SB669/A O-126 O-126C 2SB649L/2SB649AL 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T6C-K 2SB649L-x-T6C-K 2SB669 2SB649AL 2SB669A 2SB649 2SB649A 126-C
2SB649AL Abstract: 2SB669 2sb649a 2SB669A Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 TO-252 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 1 TO-126C 1 TO-92 *Pb-free plating product number:	Original	PDF	2SB649/A O-252 OT-89 2SB669/A O-126 O-126C 2SB649L/2SB649AL 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T6C-K 2SB649AL 2SB669 2sb649a 2SB669A
automotive ignition tip162 Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —	Original	PDF	BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
MJE15020 Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment	Original	PDF	MJE340 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJE15020 DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
BUS48AP Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	PDF	BD166 BD165 BD166 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUS48AP 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
BU108 Abstract: 2SC1629 equivalent BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:	Original	PDF	BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100

BU208A equivalent Abstract: BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ13333  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching	Original	PDF	MJ13333 MJ13333 AMP32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU208A equivalent BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330
D42C5 Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is	Original	PDF	MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
2SD418 Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,	Original	PDF	MJ10000 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SD418 TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
BU108 Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	PDF	BD180 BD179 BD180 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
BU108 Abstract: BDT3 2SC1943 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching	Original	PDF	MJE8503A* MJE8503A WATT32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 BDT3 2SC1943 2SC1419 BU326 BU100
2N3055 equivalent transistor NUMBER Abstract: bd139 equivalent transistor MJE350 equivalent 2n6284 equivalent TIP152 equivalent MJE371 equivalent bd139 equivalent bd139 3v BUL45 equivalent BU108 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1320  Data Sheet Designer's NPN Silicon Power Transistor Switchmode Series This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for	Original	PDF	MJE1320 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N3055 equivalent transistor NUMBER bd139 equivalent transistor MJE350 equivalent 2n6284 equivalent TIP152 equivalent MJE371 equivalent bd139 equivalent bd139 3v BUL45 equivalent BU108
bu806 REPLACEMENT Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.	Original	PDF	220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	PDF	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

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TRANSISTOR 2SB669 Search Results

TRANSISTOR 2SB669 Result Highlights (5)

TRANSISTOR 2SB669 Datasheets Context Search

2SB649AG

2SB669

2SB669

2SB669

2sb649

Untitled

Untitled

2sb669

2SB669

2SB649AL

automotive ignition tip162

MJE15020

BUS48AP

BU108

BU208A equivalent

D42C5

2SD418

BU108

BU108

2N3055 equivalent transistor NUMBER

bu806 REPLACEMENT

la 4440 amplifier circuit diagram 300 watt

2sb504

y51 h 120c