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    TRANSISTOR 2SA1268 Search Results

    TRANSISTOR 2SA1268 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA1268 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sa1268

    Abstract: No abstract text available
    Text: ST 2SA1268 PNP Silicon Epitaxial Planar Transistor For high voltage applications. The transistor is subdivided into two groups, G and L according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original
    PDF 2SA1268 2sa1268

    2SA1268

    Abstract: TRANSISTOR 2SA1268
    Text: ST 2SA1268 PNP Silicon Epitaxial Planar Transistor For high voltage applications. The transistor is subdivided into two groups, G and L according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original
    PDF 2SA1268 2SA1268 TRANSISTOR 2SA1268

    2SA1268

    Abstract: No abstract text available
    Text: ST 2SA1268 PNP Silicon Epitaxial Planar Transistor For high voltage applications. The transistor is subdivided into two groups, G and L according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original
    PDF 2SA1268 2SA1268

    2SA1268

    Abstract: ST2SA1268 2SA126 TRANSISTOR 2SA1268
    Text: ST 2SA1268 PNP Silicon Epitaxial Planar Transistor For high voltage applications. The transistor is subdivided into two groups, G and L according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original
    PDF 2SA1268 2SA1268 ST2SA1268 2SA126 TRANSISTOR 2SA1268

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


    Original
    PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878