TRANSISTOR 2SA1267 Search Results

TRANSISTOR 2SA1267 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 2SA1267 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA1267 Abstract: transistor 2sa1267 transistor amplifier 5v to 6v Text: ST 2SA1267 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2SA1267 100mA, 2SA1267 transistor 2sa1267 transistor amplifier 5v to 6v
2sa1267 Abstract: No abstract text available Text: ST 2SA1267 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2SA1267 100mA, 2sa1267
2SA1267 Abstract: transistor 2sa1267 ST2SA1267 Text: ST 2SA1267 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2SA1267 100mA, 2SA1267 transistor 2sa1267 ST2SA1267
2SA1267 Abstract: No abstract text available Text: ST 2SA1267 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2SA1267 100mA, 2SA1267
2sa1267 Abstract: No abstract text available Text: 2SC3199 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92S * Complement to 2SA1267 * Collector Current Ic=150 mA ABSOLUTE MAXIMUM RATINGS at Tamb=250C Characteristic	Original	PDF	2SC3199 O-92S 2SA1267 100uA 100mA 10Kohm 2sa1267
2SA1267 Abstract: No abstract text available Text: 2SA1267 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92S * Complement to 2SC3199 * Collector-Emitter Voltage VCEO=-50V ABSOLUTE MAXIMUM RATINGS at Tamb=250C Characteristic	Original	PDF	2SA1267 O-92S 2SC3199 -100uA -100mA -10mA 2SA1267
2SA1267 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1267 TRANSISTOR PNP TO-92S FEATURES High hFE z Excellent hFE linearing 1. EMITTER z 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol	Original	PDF	O-92S 2SA1267 O-92S -100mA, -10mA 30MHz
STk442-130 Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components	Original	PDF	100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717