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    TRANSISTOR 2SA107 Search Results

    TRANSISTOR 2SA107 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA107 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1073

    Abstract: 2SC2523
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1073 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SC2523 APPLICATIONS


    Original     		PDF 2SA1073 -160V 2SC2523 -160V 10MHz 2SA1073 2SC2523

    2SC2522

    Abstract: 2SA1072
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1072 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -120V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SC2522 APPLICATIONS


    Original     		PDF 2SA1072 -120V 2SC2522 -120V 10MHz 2SC2522 2SA1072

    2SA1077

    Abstract: 2SC2527
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1077 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SC2527 APPLICATIONS


    Original     		PDF 2SA1077 -120V 2SC2527 -120V; 10MHz 2SA1077 2SC2527

    2SC2529

    Abstract: 2SA1079
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1079 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2529 APPLICATIONS


    Original     		PDF 2SA1079 -160V 2SC2529 -160V; 10MHz 2SC2529 2SA1079

    2SC2528

    Abstract: 2SA1078
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1078 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2528 APPLICATIONS


    Original     		PDF 2SA1078 -120V 2SC2528 -120V; 10MHz 2SC2528 2SA1078

    Untitled

    Abstract: No abstract text available
    Text: Jeiizu ^£.mi-L.onaiLctoi , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1073 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEo=-160V(Min)


    Original     		PDF 2SA1073 -160V 2SC2523 -160V; 10MHz

    Untitled

    Abstract: No abstract text available
    Text: J.£.ii£tj ^icmi-donauctoi i, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1072 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown vbltageV(BR)CEo=-120V(Min)


    Original     		PDF 2SA1072 -120V 2SC2522 -120V; 10MHz

    Untitled

    Abstract: No abstract text available
    Text: , iJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1077 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-120V(Min.) • Fast Switching Speed • Wide Area of Safe Operation


    Original     		PDF 2SA1077 -120V 2SC2527 O-220C -120V; 10MHz

    Untitled

    Abstract: No abstract text available
    Text: ^zmi-Conductoi U^ioduati, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1078 DESCRIPTION • Collector-Emitter Breakdown Voltage- PIN I.BASE 2.COLLECTOR :V(BR)CEo=-120V(Min.)


    Original     		PDF 2SA1078 -120V 2SC2528 O-220C -120V; 10MHz

    Untitled

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1079 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo=-160V(Min.) • Good Linearity of hFE • Wide Area of Safe Operation


    Original     		PDF 2SA1079 -160V 2SC2529 O-220C 10MHz

    transistor 2SB618

    Abstract: 3A/fllnm 80
    Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


    Original     		PDF 2SA733 2SJ74 2SK170 2SJ76 2SK213 2SJ77 2SK214 2SJ103 2SK246 2SJ109 transistor 2SB618 3A/fllnm 80

    TRANSISTOR 2Sa 1075

    Abstract: TRANSISTOR 2Sc 2525 2SA audio POWER TRANSISTORS 2SA transistor 2SA1075 transistor 2SA 2SA POWER TRANSISTORS 2SA1076 TRANSISTOR 2SA1076 2sa tr
    Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1075 2SA1076 SILICON PNP RING EMITTER TRANSISTOR RET T h e 2S A 1 0 7 5 /2 S A 1 0 7 6 are silicon PNP general purpose, high power switching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h ­


    OCR Scan     		PDF 2SA1075 2SA1076 1075/2SA 2525/2SC 10MHz 300ms TRANSISTOR 2Sa 1075 TRANSISTOR 2Sc 2525 2SA audio POWER TRANSISTORS 2SA transistor transistor 2SA 2SA POWER TRANSISTORS 2SA1076 TRANSISTOR 2SA1076 2sa tr

    transistor 2sa 1072

    Abstract: "ring emitter" transistor 2SA 2SA audio POWER TRANSISTORS 2SA1072 2SA1073 2SA107 transistors 2SA fujitsu ring emitter transistor 2sc pnp
    Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1072 2SA1073 ^ September 1979 SILICON PNP RING EM ITTER TRANSISTOR RET T h e 2 S A 1 0 7 2 /2 S A 1 0 7 3 are silicon PNP general purpose, high p ow er sw itching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h ­


    OCR Scan     		PDF 2SA1072 2SA1073 1072/2SA 2SA1072/2SA1073 2522/2SC 2523age 10MHz 300ms transistor 2sa 1072 "ring emitter" transistor 2SA 2SA audio POWER TRANSISTORS 2SA1073 2SA107 transistors 2SA fujitsu ring emitter transistor 2sc pnp

    NPN transistor 2527

    Abstract: 2SA1077 tf 011
    Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1077 Septem ber 1979 SILICON PNP RING EM ITTER TRANSISTOR RET T h e 2 S A 1 0 7 7 is silicon PNP general purpose, high pow er sw itching transistors fab ricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h n o lo g y. R E T


    OCR Scan     		PDF 2SA1077 2SA1077 50juA, 10MHz 300/is NPN transistor 2527 tf 011

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2SA1073

    Abstract: 2SA1072 2sc2523
    Text: cP January 1990 Edition 1.1 - - - FUJITSU PRODUCT PROFILE - 2SA1072, 2SA1072A, 2SA1073 Silicon High Speed Power Transistor DESCRIPTION The 2SA1072/2SA1072A/2SA1073 are silicon P N P general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transitor RET


    OCR Scan     		PDF 2SA1072, 2SA1072A, 2SA1073 2SA1072/2SA1072A/2SA1073 2SA1073 2SA1072 2sc2523

    2SA1072

    Abstract: 2SA1073 VERO dc-dc power 25CC 2SA1072A 2SA107
    Text: FUJITSU MICROELECTRONICS 31E D E3 374=]7b2 GDlbSOfl □ E1FMI T- 3 3 - 2 . 3 January 1990 Edition 1.1 _ P R O D U C T P R O FILE Fujfrsu 2SA1072, 2SA1072A, 2SA1073 Silicon High Speed Power Transistor DESCRIPTION The 2SA1072/2SA1072A/2SA1073 are silicon PNP general purpose, high power


    OCR Scan     		PDF 374ci7b5 2SA1072, 2SA1072A, 2SA1072/2SA1072A/2SA1073 2SA1072 2SA1073 VERO dc-dc power 25CC 2SA1072A 2SA107

    2SC2522

    Abstract: fujitsu ring emitter 2sc2523 c1507 2SA1073
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION The 2SC2522/2SC2522A/2SC2523 are silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transiter RET


    OCR Scan     		PDF 2SC2522, 2C2522A, 2C2523 2SC2522/2SC2522A/2SC2523 10MHz 300us; 2SC2S22A 2SC2522A, 2SC2522 fujitsu ring emitter 2sc2523 c1507 2SA1073

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


    OCR Scan     		PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


    OCR Scan     		PDF

    transistor DA 3309

    Abstract: lc07a 2SC2528 2SA1078 bv 3309 AC 128 pnp transistor
    Text: FUJITSU MICROELECTRONICS 31E D E3 374T7L5 ÜQlt.524 =1 EBFNI cP • January 1990 Edition 1.1 »T H iT n rU J llb U PRODUCTPROFILE: - T * 2SC2528 Silicon High Speed Power Transistor_ DESCRIPTION The 2SC2528 Is a silicon NPN general purpose, medium power transistor fabricated


    OCR Scan     		PDF 374T7L5 2SC2528 2SC2528 2SA1078, transistor DA 3309 lc07a 2SA1078 bv 3309 AC 128 pnp transistor