TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002
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OT-623F
OT-323
OT-23
OT-89
OT-223
O-92S
O-226AE
O-92L
TRANSISTORS BJT bc548
jfet selection guide
J210 D2 PAK
PN4302
TN2102A
BJT BC546
FJN965
MPF102 JFET data sheet
KSP13
ks3302
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transistor 2N4125
Abstract: 2N4125 MOTOROLA 2N4125 2n4125 equivalent ku 602 vc transistor2N4125
Text: MOTOROLA Order this document by 2N4125/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N4125 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO
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2N4125/D
2N4125
226AA)
transistor 2N4125
2N4125 MOTOROLA
2N4125
2n4125 equivalent
ku 602 vc
transistor2N4125
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2n4125 equivalent
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N4125 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO 30 Vdc Emitter – Base Voltage
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2N4125
226AA)
2n4125 equivalent
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2N4125
Abstract: No abstract text available
Text: 2N4125 Amplifier Transistor. Collector-emitter Voltage: Vceo = -30V. C. 1 of 1 Home Part Number: 2N4125 Online Store 2N4125 Diodes Am plifier Transis t o r. C o llec t o r- em it ter Vo ltage: Vc eo = - 3 0 V.
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2N4125
com/2n4125
2N4125
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transistor 2N5952
Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also
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Untitled
Abstract: No abstract text available
Text: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: V ceo =2N41 25: 30V 2N4126: 25V * Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO -3 0
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2N4125/4126
2N4126:
10fiA,
100MHz
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2N4125
Abstract: 2N4126 2n4125 transistor
Text: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: V c e o *= 2N4125:3 0 V 2N4126:25V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage
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2N4125/4126
2N4125
2N4126
625mW
2N4126
TA-25t;
2n4125 transistor
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2N4126
Abstract: 2N41 2N4125 transistor 2N4125 2n4125 transistor Tj150
Text: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: TO-92 = 2N41 25: 3 0 V 2N4126: 25V * Collector Dissipation: Pc m ax =625mW V ceo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic C ollector-B ase Voltage :2 N 4 1 2 5
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2N4125/4126
2N4126:
625mW
2N4126
-10mA,
2N4125
2N4126
2N41
2N4125
transistor 2N4125
2n4125 transistor
Tj150
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2N3906
Abstract: 2N4125
Text: SA MS UN G SEM IC ONDUCTOR INC ; 2N4125 IME O | 7 ^ 4 1 4 2 0Q0?lb7 S PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: Veso =30 V * Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (T8=25°C)
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00071b?
2N4125
625mW
2N3906
T-29-21
100MHz
100/iA,
300jjs,
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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LC 300-S
Abstract: 2N41 2N4125
Text: Transistors 2N4125 USHA INDIA LTD AMPLIFIER TRANSISTOR * Collector-Emitter Voltage: Vceo = 2N41 25: 30V TO-92 * Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcbO -3 0 V
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2N4125
625mW
-55M50
-10nA,
-10hA,
-50mA
-50mA,
100MHz
S300fiS,
LC 300-S
2N41
2N4125
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2n4125 transistor
Abstract: 2N4125
Text: TOSHIBA 2N4125 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqbo ~ -50nA Max. @ Vqb _ -20V - l(£go ~ -50nA (Max.) @ V^g = -3V • Low Saturation Voltage - VCE(sat) = -0.4V (Max.) @ lc = -50mA, lB = -5mA
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2N4125
-50nA
-50mA,
2N4123
2n4125 transistor
2N4125
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Untitled
Abstract: No abstract text available
Text: 4 TOSHIBA TRANSISTOR 2N4125 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. . Low Leakage Current : ICBO=_50nA(Max.) @ V c b =-20V lEBO=-50nA(Max.) @ V e B=-3V . Low Saturation Voltage : ^ C E ( s a t ) = ~ 0 .
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2N4125
-50nA
-50mA,
2N4123
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2N4123
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR 2N4123 SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FE AT U R E S : . Low Leakage Current : ICBO= 50nA(Max.) as @ V c b =20V lEBO=50nA(Max.) 5 MAX. @ V e b = 3V . Low Saturation Voltage
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2N4123
2N4125
10/jA,
100MHz
2N4123
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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SST4126
Abstract: "Die No." 2N3906 sot323
Text: DIE No. r PNP Small Signal TRANSISTOR DIE No. IMAXIMUM RATINGS T A=25°C Free Air Symbol Value Unit Collector-Emitter Voltage VcEO 40 V Collector-Base Voltage VcBO 50 V Emitter-Base Voltage V ebo 5 V Collector Current Continuous lc Parameter A - 38 • DESCRIPTION
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OT323)
SST4126
"Die No."
2N3906 sot323
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2S301
BS9300-C-598
2S305
BS9300-C-366
2S307
2S322
CV7396
BS9300-C-396
CV7647
BS9300-C-647
TIS43
equivalent of transistor bc214
BF257 Texas
equivalent of transistor bc212 bc 214
2N696 TEXAS INSTRUMENTS
Q2T2222
TIS70
BFR40
kd 2060 transistor
BF195 equivalent
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistor PNP Silicon 2N 4125 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage VCEO 30 Vdc C ollector-B ase Voltage VCBO 30 Vdc E m itter-B ase Voltage VEBO 4.0 Vdc
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2N4125
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transistor c37
Abstract: a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 TRANSISTOR a31 2N3904 A32 2N3904 b11
Text: BIPOLAR TRANSISTOR PARTS LIST ALPHA-NUMERIC INDEX OF S S T /S M T SOT-23 , UMT (SOT-323), MPT (SOT-89) AND TO-92 PACKAGED BIPOLAR TRANSISTORS PART NUMBER PART NUMBER DIE No. DIE No. PAGE PAGE PAGE PAGE 2 2N2925 28 C22 61 2N3703 31 A32 37 BCW65B BCW65C 22
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OT-23)
OT-323)
OT-89)
2N2925
2N3703
2N3704
2N3706
2N3711
2N3860
2N3903
transistor c37
a38 TRANSISTOR
2N3904 A38
2N3904 A31
TRANSISTOR a32
c104 TRANSISTOR
2n3904 c33
TRANSISTOR a31
2N3904 A32
2N3904 b11
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TIPI27
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO! ' ÌQ d | ^7250 0GlbLH3 5 | ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0
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OT-23MOD
2N3903
YTS3903
2N3904
YTS3904
2N3905
YTS3905
2N3906
YTS3906
2N4123
TIPI27
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