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    TRANSISTOR 2BJ Search Results

    TRANSISTOR 2BJ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2BJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    h7d marking

    Abstract: No abstract text available
    Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W฀4EHB:M?:;฀8;IJ฀/ =L"a`#฀?D฀1, W฀ EM;IJ฀<?=KH;฀E<฀C;H?J฀/,+฀N฀.Y V !0฀8M\_Sj .) O R =L"a`#%_Sj )'*-)  -1 `< Q Y%fkb W฀2BJH7฀BEM฀=7J;฀9>7H=; W฀"NJH;C;฀:L :J฀H7J;:


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    PDF IPA50R140CP 97F78 799EH: h7d marking

    FRO 021 inverter

    Abstract: No abstract text available
    Text: TOSHIBA MIG30J906H/HA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT M IG 30J906H , M IG 30J906H A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.


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    PDF MIG30J906H/HA 30J906H 30J906H 0A/600V 0A/800V MIG30J906H 2-108E3A MIG30J906HA 2-108E4A 961001EAA2 FRO 021 inverter

    Untitled

    Abstract: No abstract text available
    Text: H1-506/507 2 HARRIS HI-506/507 Single 16/Differential 8 Channel CMOS Analog Multiplexers Features Description • Low On Resistance (T y p . .18011 • Wide Analog Signal R a n g e .±15V • TTL7CMOS Compatible . . . 2.4V (Logic “1”)


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    PDF H1-506/507 HI-506/507 16/Differential 250ns -550C 28-Pln

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS ^ UC1625 UC3625 UNITRO DE Brushless DC M otor Controller FEATURES DESCRIPTION • Drives Pow er M O SFETs or P ow er D arlingtons directly • 50V O pen C ollector High-Side Drivers • Latched Soft Start • High-speed C urrent-S ense A m plifier with Ideal Diode


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    PDF UC1625 UC3625 140us. 140us

    RSN 3306 H

    Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
    Text: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS


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    PDF 54S/74S RSN 3306 H ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor

    SN76670

    Abstract: sn76131 SNF10 The Integrated Circuits Catalog for Design Engineers SN76005 inverter welder schematic inverter LS600 sn76630 SN76660 sn76013
    Text: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS


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    PDF CC-401 10072-41-US 54S/74S 54H/74H 54L/74L TIH101 SN76670 sn76131 SNF10 The Integrated Circuits Catalog for Design Engineers SN76005 inverter welder schematic inverter LS600 sn76630 SN76660 sn76013

    74L47

    Abstract: a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600
    Text: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS


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    PDF CC-401 10072-41-US 54S/74S 74L47 a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600

    555 7490 7447 7 segment LED display

    Abstract: SN76670 SNF10 rsn 3404 rsn 3305 NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG mc2051 SN76131 SN76005 Ross Hill SCR Contactor
    Text: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS


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    PDF 54S/74S 54H/74H 54L/74L TIH101 555 7490 7447 7 segment LED display SN76670 SNF10 rsn 3404 rsn 3305 NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG mc2051 SN76131 SN76005 Ross Hill SCR Contactor

    3ean

    Abstract: RX CZS 3 FLEXIWATT15 L3000S L3000SX L3000SX-77 L3000SX-VM L3030 PLCC44 diode T9 AC-DC
    Text: / = 7 SGS-THOMSON EiilD{glS ilL[l g,inS(ô KilD(gS L3000S L3030 SUBSCRIBER LINE INTERFACE KIT P R E L IM IN A R Y D A TA . PROGRAMMABLE DC FEEDING RESIS-TANCE AND LIMITINGCURRENT (fourvalues avai­ lable) . THREE OPERATING MODES : STAND-BY, CONVERSATION, RINGING


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    PDF L3000S L3030 L3000S PowerS020 3ean RX CZS 3 FLEXIWATT15 L3000SX L3000SX-77 L3000SX-VM L3030 PLCC44 diode T9 AC-DC

    M51977P

    Abstract: M51977P equivalent m51977
    Text: MITSUBISHI SEMICONDUCTORS e w o r c c j c t M5 1 9 7 7 P / F P P r e I ¡m i n a r y PWM FOR SM PS PIN CONFIGURATION TOP VIEW D e s c r i p t i on Mitsubishi IC TYPE M 5 1 9 7 7 P and M51977FP are the o f f ­ l i n e p r i m a r y PWM c o n t r o l l e r


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    PDF M51977FP M51977P M51977P equivalent m51977

    OX36D-S-MR-R

    Abstract: dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117
    Text: ABOWEI n r r y /^ B i i ij Products BOWEI IN TEG RA TED C IR C U IT S C O .,LTD 2 0 0 7 .5 A bow ei BOWEI is one ofthe leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and manufacturing


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    PDF 12000-square-meter IS09000-2000, Min15 MXF3200 MXF3200A 12WCMXF3200) 6WCMXF3200A) OX36D-S-MR-R dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117

    VEB mikroelektronik

    Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
    Text: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente


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