Untitled
Abstract: No abstract text available
Text: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)
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2SA2094
2SC5866
SC-96)
R1102A
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C5875
Abstract: 2SA2087 2SC5875
Text: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and
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2SC5875
200mV
2SA2087
65Max.
C5875
C5875
2SA2087
2SC5875
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APE1707
Abstract: 24v to 5V 2A SW regulator APE1707-ADJ APE1707-12V marking codes transistors SSs APE1707-3 APE1707-5 APE1707X-XX B240A B340A
Text: Advanced Power Electronics Corp. Preliminary APE1707 150KHz, 2A PWM Buck DC/DC Converter GENERAL DESCRIPTION The APE1707 series are monolithic IC designed for a step-down DC/DC converter, and own the ability of driving a 2A load without additional transistor. It saves board
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APE1707
150KHz,
APE1707
1707M-XX
24v to 5V 2A SW regulator
APE1707-ADJ
APE1707-12V
marking codes transistors SSs
APE1707-3
APE1707-5
APE1707X-XX
B240A
B340A
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IN5817 schottky diode symbol
Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small
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TC120
600mA
300kHz
TC120503EHA
TC120
system420
D-81739
DS21365B-page
IN5817 schottky diode symbol
1N5817
595D
IN5817
MA737
TC120303EHA
TC120333EHA
TC120503EHA
equivalent components for transistor 2N2222
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2SA1773
Abstract: 2SC4616 300V transistor npn 2a
Text: 2SA1773 / 2SC4616 Ordering number : EN3399D SANYO Semiconductors DATA SHEET 2SA1773 / 2SC4616 2SA1773 : PNP Epitaxial Planar Silicon Transistor 2SC4616 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • Large current capacity IC=2A .
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2SA1773
2SC4616
EN3399D
2SA1773
VCEO400V)
2SC4616
300V transistor npn 2a
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).
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ENN3512B
2SA1786
2SC4646
2SA1786/2SC4646
2SA1786/2SC4646]
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ZXT12P40DX
Abstract: MO-187 TS16949 ZXT12P40DXTA ZXT12P40DXTC
Text: ZXT12P40DX SuperSOT4 DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 75m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT12P40DX
ZXT12P40DX
MO-187
TS16949
ZXT12P40DXTA
ZXT12P40DXTC
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SMD TRANSISTOR MARKING 2A pnp
Abstract: CMBT3906
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
CMBT3906
C-120
SMD TRANSISTOR MARKING 2A pnp
CMBT3906
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BR 8050 D
Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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100mA
BR 8050 D
NPN transistor 8050d
BR 8050
transistor 8550
st 8050d
transistor br 8050
8050 TRANSISTOR PNP
8050c
8050 pnp transistor
8050d
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8550c
Abstract: BR 8550D 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D transistor 8550D PNP br 8550c NPN Transistor BR 8550 BR 8550 D
Text: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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100mA
8550c
BR 8550D
8550D transistor
br 8550 NPN Transistor
8550D
transistor 8550D
transistor 8550D PNP
br 8550c NPN Transistor
BR 8550
BR 8550 D
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2SC3807C
Abstract: No abstract text available
Text: 2SC3807C Ordering number : ENA0439 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers.
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2SC3807C
ENA0439
VEBO17V)
A0439-4/4
2SC3807C
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BR 8550
Abstract: BR 8550 D BR 8550D 8550c 8550D he 8550d PNP 8550 8550 pnp transistor 8550D transistor br 8550 c
Text: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. 1. Emitter 2. Base 3. Collector
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8550C
8550D
BR 8550
BR 8550 D
BR 8550D
8550c
8550D
he 8550d
PNP 8550
8550 pnp transistor
8550D transistor
br 8550 c
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)
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WBFBP-03A
2SA1585E
WBFBP-03A
100MHz
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transistor Ic 1A datasheet
Abstract: transistor Ic 1A datasheet NPN 2SB857 2SD1133
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1133 DESCRIPTION •Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE sat = 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB857
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2SD1133
2SB857
transistor Ic 1A datasheet
transistor Ic 1A datasheet NPN
2SB857
2SD1133
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Untitled
Abstract: No abstract text available
Text: ST PBSS4240 40V; 2A NPN Low VCE sat (BISS) Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capability ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙Supply line switching circuits ˙Battery management applications
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PBSS4240
Tamb25
100mA,
500mA,
750mA,
200mA;
100mA;
100mA
100MHz
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Untitled
Abstract: No abstract text available
Text: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 400 V VEBO 10 V 5(Pulse10) A IC Conditions Ratings Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30
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2SC4073
Pulse10)
O220F)
100max
400min
10typ
30typ
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STB1277
Abstract: Transistor TRANSISTOR stb1277 STD1862
Text: STB1277 Semiconductor PNP Silicon Transistor Description • Audio power amplifier • High current application Features • High current : IC=-2A • Complementary pair with STD1862 Ordering Information Type NO. Marking STB1277 STB1277 Package Code TO-92
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STB1277
STD1862
KST-9035-002
STB1277
Transistor
TRANSISTOR stb1277
STD1862
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KSB546
Abstract: KSD401 vertical tv deflexion KSD401 O
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSD401 DESCRIPTION •Collector-Base Breakdown Voltage: V BR CBO= 200V(Min) ·Collector Current- IC= 2A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ ·Complement to Type KSB546
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KSD401
KSB546
KSB546
KSD401
vertical tv deflexion
KSD401 O
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D612K
Abstract: D612 transistor B632K transistor b632k TRANSISTOR D612 D612 k 2SB632 D612 2SB632K d612k to126
Text: Ordering number:341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features Package Dimensions • High collector dissipation and wide ASO. unit:mm 2009B [2SB632, 632K/2SD612, 612K]
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2SB632,
632K/2SD612,
5V/35V,
2009B
O-126
2SB632K,
D612K
D612 transistor
B632K
transistor b632k
TRANSISTOR D612
D612 k
2SB632
D612
2SB632K
d612k to126
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2SB1102
Abstract: 2SD1602
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1602 APPLICATIONS
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2SD1602
-40mA
2SB1102
2SD1602
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darlington Ib 0.1A
Abstract: darlington transistor for audio power application 2SD1980 100V 2A MPT3 2SB1316 2SB1580 2SD1867 2SD2195 T100 DPT-100
Text: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V, 2A 2SD2195 / 2SD1980 / 2SD1867 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316.
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2SD2195
2SD1980
2SD1867
2SB1580
2SB1316.
2SD2195
SC-62
darlington Ib 0.1A
darlington transistor for audio power application
100V 2A MPT3
2SB1316
2SD1867
T100
DPT-100
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2SA1160
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1160 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -2A Collector-base voltage
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O-92MOD
2SA1160
O-92MOD
-10mA
-50mA
2SA1160
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transistor on 4409
Abstract: on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1
Text: Ordering num ber:EN4409 2SA1830/2SC4734 2SA1830 : PNP Epitaxial Planar Silicon Transistor No.4409 2SC4734 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • Large current capacity Ic = 2A . • High breakdown voltage (Vceo = 400V).
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EN4409
2SA1830/2SC4734
2SA1830
2SC4734
2SA1830/2SC4734
transistor on 4409
on 4409
5SA18
2SC473
2SC4734
transistor t5c
2SA1830
5sa1
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U2T405
Abstract: t605 U2T305
Text: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode NPN Darlingtons consist of a two transistor circuit on a single monolithic planar chip. High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A
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U2T301
U2T305
U2T401
U2T405
U2T305
U2T301
U2T401
U2T405
t605
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