2SD596
Abstract: transistor dv4 2SB624
Text: 2SD596 SILICON TRANSISTOR SOT-23 3 AUDIO FREQUENCY POWER AMPLIFIER 1 NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA
|
Original
|
PDF
|
2SD596
OT-23
2SB624
100mA)
200mA
2SD596
transistor dv4
|
2SD596 dv3
Abstract: marking DV4 2SB624 2SD596 2sd59 transistor dv4
Text: 2SD596 SILICON TRANSISTOR SOT-23 3 1 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA
|
Original
|
PDF
|
2SD596
OT-23
2SB624
100mA)
200mA
2SD596 dv3
marking DV4
2SD596
2sd59
transistor dv4
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2785 TRANSISTOR NPN TO-92S FEATURES z High voltage VCEO:50V z Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) z Complementary to 2SA1175 PNP transistor
|
Original
|
PDF
|
O-92S
2SC2785
O-92S
2SA1175
100mA,
|
Untitled
Abstract: No abstract text available
Text: RN2501~RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2501,RN2502,RN2503 RN2504,RN2505,RN2506 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads)
|
Original
|
PDF
|
RN2501
RN2506
RN2502
RN2503
RN2504
RN2505
RN1501
RN1506
|
transistor DV3
Abstract: transistor dv4 2SD596 DV4 sot23 2SD596 dv3 marking DV4 marking DV5 marking code DV3 2SB624 transistor DV1
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SD596 Pb Micro package. z Lead-free Complementary to 2SB624 PNP Transistor. z High DC current gain hFE:200TYP. VCE=1.0V,IC=100mA APPLICATIONS z Audio frequency general purpose amplifier applications.
|
Original
|
PDF
|
2SD596
2SB624
200TYP.
100mA)
OT-23
BL/SSSTC024
transistor DV3
transistor dv4
2SD596
DV4 sot23
2SD596 dv3
marking DV4
marking DV5
marking code DV3
transistor DV1
|
Untitled
Abstract: No abstract text available
Text: RN2501~RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in SMV (super mini type with 5 leads)
|
Original
|
PDF
|
RN2501
RN2506
RN2501,
RN2502,
RN2503
RN2504,
RN2505,
RN1501
RN1506
|
2sC2785
Abstract: 2SA1175 TRANSISTOR 2SA1175 2SC2785 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2785 TRANSISTOR NPN TO-92S FEATURES z High voltage z Excellent hFE Linearity z Complementary to 2SA1175 PNP transistor 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
PDF
|
O-92S
2SC2785
O-92S
2SA1175
100mA,
2sC2785
TRANSISTOR 2SA1175
2SC2785 transistor
|
2506
Abstract: RN1501 RN1506 RN2501 RN2502 RN2503 RN2504 RN2505 RN2506
Text: RN2501~RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2501,RN2502,RN2503 RN2504,RN2505,RN2506 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in SMV (super mini type with 5 leads)
|
Original
|
PDF
|
RN2501
RN2506
RN2502
RN2503
RN2504
RN2505
RN1501
RN1506
2506
RN1506
RN2503
RN2506
|
2SB624
Abstract: 2SD596
Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.
|
Original
|
PDF
|
2SB624
OT-23
The2SB624
-100mA)
2SD596
2SB624
|
sot-23 bv2
Abstract: 2SB624 2SD596
Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.
|
Original
|
PDF
|
2SB624
OT-23
The2SB624
-100mA)
2SD596
sot-23 bv2
2SB624
|
2SC2785
Abstract: transistor 2sc2785 2SC2785 transistor TO92S transistor 2sa1175 KF 25 transistor transistor 123
Text: 2SC2785 TO-92S Transistor NPN 1. EMITTER TO-92S 2. COLLECTOR 123 Features 3. BASE High voltage VCEO:50V Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
PDF
|
O-92S
2SC2785
O-92S
2SA1175
100mA,
2SC2785
transistor 2sc2785
2SC2785 transistor
TO92S
transistor 2sa1175
KF 25 transistor
transistor 123
|
2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
|
Original
|
PDF
|
3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
|
G8050S
Abstract: G8550S
Text: CORPORATION G8050S ISSUED DATE :2004/04/22 REVISED DATE :2004/11/29B N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR Description The G8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio
|
Original
|
PDF
|
G8050S
2004/11/29B
G8050S
700mA
G8550S
G8550S
|
G8051S
Abstract: G8551S
Text: ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B G8051S N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR Description The G8051S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio
|
Original
|
PDF
|
2004/11/29B
G8051S
G8051S
700mA
G8551S
G8551S
|
|
sot-23 bv4
Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.
|
Original
|
PDF
|
2SB624
200TYP
-100mA)
2SD596.
OT-23
BL/SSSTC014
sot-23 bv4
2SB624
BV4 sot23
TRANSISTOR BV3
marking BV4
SOT23 BV2
2SD596
BV3 marking
BV5 SOT-23
transistor BV4
|
2SD596
Abstract: No abstract text available
Text: RECTRON 2SD596 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range
|
Original
|
PDF
|
2SD596
OT-23
OT-23
MIL-STD-202E
2SD596
|
RN1501
Abstract: RN1506 RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 Usage 2506
Text: RN2501~RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2501,RN2502,RN2503 RN2504,RN2505,RN2506 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads)
|
Original
|
PDF
|
RN2501
RN2506
RN2502
RN2503
RN2504
RN2505
RN1501
RN1506
RN1506
RN2503
RN2506
Usage
2506
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
PDF
|
|
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
|
OCR Scan
|
PDF
|
|
LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
PDF
|
3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
|
IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
PDF
|
|
1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
PDF
|
|
transistor et 454
Abstract: B686 2SD774 pt 4115 T1IU 2SB734 K0559
Text: Silicon Transistor 2SD774 N PN i + 9 IJ =1 V h NPN Silicon Epitaxial Transistor Audio Frequency Power Am plifier * M S /P A C K A G E DIMENSIONS Unit •mm 0 2SB734 t ^ > 7"U > > ? ') T l i f f l t i i t . < . S B tE T 'to P t = 1.0 W, V ceo = 50 V * & * * * * £ * & /A B S O L U T E M A XIM U M RATINGS {Ta = 25 X )
|
OCR Scan
|
PDF
|
2SD774
2SB734
transistor et 454
B686
2SD774
pt 4115
T1IU
K0559
|
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
|
OCR Scan
|
PDF
|
|